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FETs, MOSFETs(55612)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDA16N50-F109 | 1.5600 |  |
270 | 0.00000000 | Fairchild Semiconductor | UniFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | download | EAR99 | 8542.39.0001 | 270 | N-Channel | 500 V | 16.5A (Tc) | 10V | 380mOhm @ 8.3A, 10V | 5V @ 250µA | 45 nC @ 10 V | ±30V | 1945 pF @ 25 V | - | 205W (Tc) | |||||||||||||||
 |
AUIRL7766M2TR | 1.7800 | |
37 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric M4 | MOSFET (Metal Oxide) | DirectFET™ Isometric M4 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 100 V | 10A (Ta) | 4.5V, 10V | 10mOhm @ 31A, 10V | 2.5V @ 150µA | 66 nC @ 4.5 V | ±16V | 5305 pF @ 25 V | - | 2.5W (Ta), 62.5W (Tc) | |||||||||||||||
 |
BUK6D43-60E,115 | - | |
5310 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||
 |
AUIRFB3207 | - | |
9778 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | EAR99 | 8541.29.0095 | 50 | N-Channel | 75 V | 75A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 7600 pF @ 50 V | - | 300W (Tc) | |||||||||||||||
 |
BSS84AKW,115 | 1.0000 | |
7745 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | BSS84 | - | download | 0000.00.0000 | 1 | - | |||||||||||||||||||||||||||||
|
BUK9D23-40E,115 | - | |
2995 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||
 |
CLF1G0035-100PU | 263.3300 | |
25 | 0.00000000 | NXP USA Inc. | - | Bulk | Active | 150 V | Chassis Mount | SOT-1228A | 3GHz | GaN HEMT | LDMOST | download | EAR99 | 8541.29.0075 | 1 | - | 100 mA | 100W | 14dB | - | 50 V | |||||||||||||||||||
 |
AUIRFZ48Z | 0.9100 | |
5 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 55 V | 61A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1720 pF @ 25 V | - | 91W (Tc) | |||||||||||||||
 |
AUIRFS8408-7TRL | 1.0000 | |
4524 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-7-900 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 240A (Tc) | 10V | 1mOhm @ 100A, 10V | 3.9V @ 250µA | 315 nC @ 10 V | ±20V | 10250 pF @ 25 V | - | 294W (Tc) | |||||||||||||||
 |
BSS214NWH6327 | 1.0000 | |
7135 | 0.00000000 | Infineon Technologies | OptiMOS™ 2 | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | MOSFET (Metal Oxide) | PG-SOT323-3-2 | download | EAR99 | 8541.21.0095 | 1 | N-Channel | 20 V | 1.5A (Ta) | 2.5V, 4.5V | 140mOhm @ 1.5A, 4.5V | 1.2V @ 3.7µA | 0.8 nC @ 5 V | ±12V | 143 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||
 |
BUK661R8-30C,118 | 1.1300 | |
1 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 30 V | 120A (Tc) | 4.5V, 10V | 1.9mOhm @ 25A, 10V | 2.8V @ 1mA | 168 nC @ 10 V | ±16V | 10918 pF @ 25 V | - | 263W (Tc) | |||||||||||||||
 |
BUK7Y2R0-40H,115 | - | |
6732 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||
|
AUIRFR024NTRL | 1.0000 | |
9835 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | - | 0000.00.0000 | 1 | N-Channel | 55 V | 17A (Tc) | 75mOhm @ 10A, 10V | 4V @ 250µA | 20 nC @ 10 V | 370 pF @ 25 V | - | 45W (Tc) | ||||||||||||||||||
|
BUK7M21-40E,115 | 1.0000 | |
6146 | 0.00000000 | NXP Semiconductors | * | Bulk | Active | - | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||
|
CPH3442-TL-E | 0.4100 | |
2944 | 0.00000000 | Sanyo | - | Bulk | Obsolete | 150°C (TJ) | Surface Mount | SC-96 | MOSFET (Metal Oxide) | 3-CPH | - | Not applicable | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 81 | N-Channel | 30 V | 6.5A (Ta) | 24mOhm @ 3A, 4V | - | 16.1 nC @ 4 V | 1295 pF @ 10 V | - | 1.2W (Ta) | ||||||||||||||
|
AUIRF1010EZS | - | |
5742 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 60 V | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±20V | 2810 pF @ 25 V | - | 140W (Tc) | |||||||||||||||
 |
BUK9606-75B,118 | - | |
8574 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | BUK96 | download | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | ||||||||||||||||||||||||||||
|
BUK962R5-60E118 | 1.0000 | |
6166 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | EAR99 | 8541.29.0095 | 1 | |||||||||||||||||||||||||||||||
 |
FDC654P | 0.1700 | |
2 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | SuperSOT™-6 | download | EAR99 | 8541.29.0095 | 1,789 | P-Channel | 30 V | 3.6A (Ta) | 4.5V, 10V | 75mOhm @ 3.6A, 10V | 3V @ 250µA | 9 nC @ 10 V | ±20V | 298 pF @ 15 V | - | 1.6W (Ta) | |||||||||||||||
 |
FDN358P | - | |
6844 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | FDN358 | MOSFET (Metal Oxide) | SuperSOT-3 | download | EAR99 | 8542.39.0001 | 1 | P-Channel | 30 V | 1.5A (Ta) | 4.5V, 10V | 125mOhm @ 1.5A, 10V | 3V @ 250µA | 5.6 nC @ 10 V | ±20V | 182 pF @ 15 V | - | 500mW (Ta) | ||||||||||||||
 |
FDB0170N607L | - | |
3824 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | MOSFET (Metal Oxide) | TO-263-7 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 60 V | 300A (Tc) | 10V | 1.4mOhm @ 39A, 10V | 4V @ 250µA | 243 nC @ 10 V | ±20V | 19250 pF @ 30 V | - | 3.8W (Ta), 250W (Tc) | |||||||||||||||
 |
IPI80N04S4-03 | 1.0700 | |
350 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | PG-TO262-3-1 | download | EAR99 | 8542.39.0001 | 350 | N-Channel | 40 V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 53µA | 66 nC @ 10 V | ±20V | 5260 pF @ 25 V | - | 94W (Tc) | |||||||||||||||
 |
FDMS015N04B | 1.0000 | |
8411 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-PQFN (5x6) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 40 V | 31.3A (Ta), 100A (Tc) | 10V | 1.5mOhm @ 50A, 10V | 4V @ 250µA | 118 nC @ 10 V | ±20V | 8725 pF @ 20 V | - | 2.5W (Ta), 104W (Tc) | |||||||||||||||
|
IRFBA1404PPBF | 1.5600 | |
258 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Obsolete | -40°C ~ 175°C (TJ) | Through Hole | TO-273AA | MOSFET (Metal Oxide) | SUPER-220™ (TO-273AA) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 40 V | 206A (Tc) | 10V | 3.7mOhm @ 95A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 7360 pF @ 25 V | - | 300W (Tc) | |||||||||||||||
|
IPN70R1K5CE | 1.0000 | |
4905 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -40°C ~ 150°C (TJ) | Surface Mount | TO-261-3 | MOSFET (Metal Oxide) | PG-SOT223 | download | 0000.00.0000 | 1 | N-Channel | 700 V | 5.4A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 225 pF @ 100 V | - | 5W (Tc) | ||||||||||||||||
|
EFC4C002NLTDG | - | |
5939 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | 150°C (TJ) | Surface Mount | 8-XFBGA, WLCSP | EFC4C002 | MOSFET (Metal Oxide) | 2.6W | 8-WLCSP (6x2.5) | download | 0000.00.0000 | 1 | 2 N-Channel (Dual) Common Drain | - | - | - | 2.2V @ 1mA | 45nC @ 4.5V | 6200pF @ 15V | Logic Level Gate | |||||||||||||||||
 |
FDV305N | - | |
6963 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 20 V | 900mA (Ta) | 2.5V, 4.5V | 220mOhm @ 900mA, 4.5V | 1.5V @ 250µA | 1.5 nC @ 4.5 V | ±12V | 109 pF @ 10 V | - | 350mW (Ta) | |||||||||||||||
 |
FDY301NZ | - | |
6207 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | SC-89, SOT-490 | MOSFET (Metal Oxide) | SOT-523F | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 20 V | 200mA (Ta) | 1.5V, 4.5V | 5Ohm @ 200mA, 4.5V | 1.5V @ 250µA | 1.1 nC @ 4.5 V | ±12V | 60 pF @ 10 V | - | 625mW (Ta) | |||||||||||||||
 |
IPW60R125P6 | - | |
5062 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | PG-TO247-3 | download | 0000.00.0000 | 1 | N-Channel | 600 V | 30A (Tc) | 10V | 125mOhm @ 11.6A, 10V | 4.5V @ 960µA | 56 nC @ 10 V | ±20V | 2660 pF @ 100 V | - | 219W (Tc) | ||||||||||||||||
|
AFT18HW355SR5,178 | 1.0000 | |
2872 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 |
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