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FETs, MOSFETs(55612)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MMRF1006HR5 | 543.1200 |  |
35 | 0.00000000 | Freescale Semiconductor | - | Bulk | Active | 120 V | Chassis Mount | SOT-979A | 450MHz | LDMOS | NI-1230-4H | download | EAR99 | 8542.39.0001 | 1 | - | 150 mA | 1000W | 20dB | - | 50 V | |||||||||||||||||||
 |
BUK6607-55C,118 | 0.8500 | |
400 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 400 | N-Channel | 55 V | 100A (Tc) | 10V | 6.5mOhm @ 25A, 10V | 2.8V @ 1mA | 82 nC @ 10 V | ±16V | 5160 pF @ 25 V | - | 158W (Tc) | |||||||||||||||
|
AUIRLR3705ZTR | - | |
4648 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | EAR99 | 8541.29.0095 | 153 | N-Channel | 55 V | 42A (Tc) | 8mOhm @ 42A, 10V | 3V @ 250µA | 66 nC @ 5 V | 2900 pF @ 25 V | - | |||||||||||||||||||
 |
FQAF16N50 | 2.7900 | |
8 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | MOSFET (Metal Oxide) | TO-3PF | download | EAR99 | 8542.39.0001 | 108 | N-Channel | 500 V | 11.3A (Tc) | 10V | 320mOhm @ 5.65A, 10V | 5V @ 250µA | 75 nC @ 10 V | ±30V | 3000 pF @ 25 V | - | 110W (Tc) | |||||||||||||||
|
BUK9226-75A/C1,118 | 1.0000 | |
4294 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||
|
IPD50R800CE | 1.0000 | |
5849 | 0.00000000 | Infineon Technologies | CoolMOS™ CE | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD50 | MOSFET (Metal Oxide) | PG-TO252-3-344 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 500 V | 7.6A (Tc) | 13V | 800mOhm @ 1.5A, 13V | 3.5V @ 130µA | 12.4 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 60W (Tc) | ||||||||||||||
|
BUK762R6-60E,118 | - | |
6607 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | 0000.00.0000 | 1 | N-Channel | 60 V | 120A (Tc) | 10V | 2.6mOhm @ 25A, 10V | 4V @ 1mA | 140 nC @ 10 V | ±20V | 10170 pF @ 25 V | - | 324W (Tc) | ||||||||||||||||
 |
FDPF5N50NZU | 0.7800 | |
1 | 0.00000000 | Fairchild Semiconductor | UniFET-II™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 500 V | 3.9A (Tc) | 10V | 2Ohm @ 1.95A, 10V | 5V @ 250µA | 12 nC @ 10 V | ±25V | 485 pF @ 25 V | - | 30W (Tc) | |||||||||||||||
 |
AUIRFS3107-7TRL | 1.0000 | |
4840 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | MOSFET (Metal Oxide) | D2PAK (7-Lead) | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 75 V | 240A (Tc) | 2.6mOhm @ 160A, 10V | 4V @ 250µA | 240 nC @ 10 V | 9200 pF @ 50 V | - | 370W (Tc) | |||||||||||||||||
|
BSS84AKW | 1.0000 | |
2685 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | - | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||
 |
FQPF11P06 | 0.6200 | |
552 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8542.39.0001 | 552 | P-Channel | 60 V | 8.6A (Tc) | 10V | 175mOhm @ 4.3A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±25V | 550 pF @ 25 V | - | 30W (Tc) | |||||||||||||||
 |
IPI075N15N3G | - | |
4585 | 0.00000000 | Infineon Technologies | OptiMOS™ 3 | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | PG-TO262-3-1 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 150 V | 120A (Tc) | 8V, 10V | 7.5mOhm @ 100A, 10V | 4V @ 270µA | 93 nC @ 10 V | ±20V | 5470 pF @ 75 V | - | 300W (Tc) | |||||||||||||||
|
IRF200S234 | - | |
5507 | 0.00000000 | International Rectifier | - | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 200 V | 90A | 10V | 16.9mOhm @ 51A, 10V | 5V @ 250µA | 162 nC @ 10 V | ±20V | 6484 pF @ 50 V | - | 417W (Tc) | |||||||||||||||
|
AUIRFSL8405 | - | |
6271 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 120A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 3.9V @ 100µA | 161 nC @ 10 V | ±20V | 5193 pF @ 25 V | - | 163W (Tc) | |||||||||||||||
 |
BUK7214-75B,118 | - | |
9154 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | BUK72 | download | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | ||||||||||||||||||||||||||||
|
FQB19N20CTM | 1.0000 | |
3683 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK (TO-263) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 200 V | 19A (Tc) | 10V | 170mOhm @ 9.5A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1080 pF @ 25 V | - | 3.13W (Ta), 139W (Tc) | |||||||||||||||
 |
BLF888BS,112 | - | |
5692 | 0.00000000 | Ampleon USA Inc. | - | Bulk | Discontinued at SIC | 104 V | SOT539B | BLF888 | 470MHz ~ 860MHz | LDMOS | SOT539B | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0075 | 20 | Dual, Common Source | 2.8µA | 250W | 21dB | - | 50 V | ||||||||||||||||
|
FQA65N20 | - | |
2980 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | download | 0000.00.0000 | 1 | N-Channel | 200 V | 65A (Tc) | 10V | 32mOhm @ 32.5A, 10V | 5V @ 250µA | 200 nC @ 10 V | ±30V | 7900 pF @ 25 V | - | 310W (Tc) | ||||||||||||||||
 |
PMZB350UPE,315 | - | |
1157 | 0.00000000 | NXP USA Inc. | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 3-XFDFN | MOSFET (Metal Oxide) | DFN1006B-3 | download | 0000.00.0000 | 1 | P-Channel | 20 V | 1A (Ta) | 1.8V, 4.5V | 450mOhm @ 300mA, 4.5V | 950mV @ 250µA | 1.9 nC @ 4.5 V | ±8V | 127 pF @ 10 V | - | 360mW (Ta), 3.125W (Tc) | ||||||||||||||||
 |
AUIRF6215 | 1.0000 | |
5014 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | EAR99 | 8541.29.0095 | 1 | P-Channel | 150 V | 13A (Tc) | 10V | 290mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 110W (Tc) | |||||||||||||||
 |
PH7730DL,115 | 0.2100 | |
18 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | - | 0000.00.0000 | 1 | ||||||||||||||||||||||||||||||||
|
FCH060N80-F155 | 1.0000 | |
3001 | 0.00000000 | Fairchild Semiconductor | SuperFET® II | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | download | 0000.00.0000 | 1 | N-Channel | 800 V | 56A (Tc) | 10V | 60mOhm @ 29A, 10V | 4.5V @ 5.8mA | 350 nC @ 10 V | ±20V | 14685 pF @ 100 V | - | 500W (Tc) | ||||||||||||||||
|
IPS80R1K4P7 | 0.5800 | |
2173 | 0.00000000 | Infineon Technologies | CoolMOS P7™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | MOSFET (Metal Oxide) | PG-TO251 | download | EAR99 | 8542.39.0001 | 375 | N-Channel | 800 V | 4A (Tj) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 700µA | 10 nC @ 10 V | ±20V | 250 pF @ 500 V | - | 32W (Tc) | |||||||||||||||
|
FDMD8260LET60 | 3.1200 | |
3 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | 12-PowerWDFN | FDMD8260 | MOSFET (Metal Oxide) | 1.1W | 12-Power3.3x5 | download | EAR99 | 8542.39.0001 | 1 | 2 N-Channel (Dual) | 60V | 15A | 5.8mOhm @ 15A, 10V | 3V @ 250µA | 68nC @ 10V | 5245pF @ 30V | - | ||||||||||||||||
|
FQD1N60CTM | 0.2700 | |
1 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252, (D-Pak) | download | EAR99 | 8542.39.0001 | 1,110 | N-Channel | 600 V | 1A (Tc) | 10V | 11.5Ohm @ 500mA, 10V | 4V @ 250µA | 6.2 nC @ 10 V | ±30V | 170 pF @ 25 V | - | 2.5W (Ta), 28W (Tc) | |||||||||||||||
 |
NXS7002AKR | 0.0200 | |
7217 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | download | EAR99 | 8541.21.0095 | 8,970 | |||||||||||||||||||||||||||||||
|
IRL7472L1TRPBF | 1.0000 | |
8378 | 0.00000000 | International Rectifier | StrongIRFET™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric L8 | MOSFET (Metal Oxide) | DirectFET™ Isometric L8 | - | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 375A (Tc) | 4.5V, 10V | 0.59mOhm @ 195A, 10V | 2.5V @ 250µA | 330 nC @ 4.5 V | ±20V | 20082 pF @ 25 V | - | 3.8W (Ta), 341W (Tc) | |||||||||||||||
 |
IRFH8337TRPBF | 1.0000 | |
7798 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PQFN (5x6) | download | 0000.00.0000 | 1 | N-Channel | 30 V | 12A (Ta), 35A (Tc) | 4.5V, 10V | 12.8mOhm @ 16.2A, 10V | 2.35V @ 25µA | 10 nC @ 10 V | ±20V | 790 pF @ 10 V | - | 3.2W (Ta), 27W (Tc) | ||||||||||||||||
 |
FDS6892A | 0.5600 | |
66 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | FDS68 | MOSFET (Metal Oxide) | 900mW | 8-SOIC | download | EAR99 | 8541.21.0095 | 1 | 2 N-Channel (Dual) | 20V | 7.5A | 18mOhm @ 7.5A, 4.5V | 1.5V @ 250µA | 17nC @ 4.5V | 1333pF @ 10V | Logic Level Gate | ||||||||||||||||
|
IRFR120NTRRPBF | - | |
9869 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | EAR99 | 8542.39.0001 | 145 | N-Channel | 100 V | 9.4A (Tc) | 10V | 210mOhm @ 5.6A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 48W (Tc) |
2000+
Daily average RFQ Volume
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Standard Product Unit
2800+
Worldwide Manufacturers
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