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FETs, MOSFETs(55612)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | REACH Status | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRFR220NPBF | 1.0000 |  |
3436 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | 0000.00.0000 | 1 | N-Channel | 200 V | 5A (Tc) | 10V | 600mOhm @ 2.9A, 10V | 4V @ 250µA | 23 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 43W (Tc) | |||||||||||||||
 |
BSO612CVG | - | |
2438 | 0.00000000 | Infineon Technologies | SIPMOS® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | BSO612 | MOSFET (Metal Oxide) | 2W (Ta) | PG-DSO-8 | download | EAR99 | 8541.29.0095 | 687 | N and P-Channel | 60V | 3A (Ta), 2A (Ta) | 120mOhm @ 3A, 10V, 300mOhm @ 2A, 10V | 4V @ 20µA, 4V @ 450µA | 15.5nC @ 10V, 16nC @ 10V | 340pF, 400pF @ 25V | - | |||||||||||||||
 |
HUF75842P3 | - | |
1670 | 0.00000000 | Fairchild Semiconductor | UltraFET™ | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 150 V | 43A (Tc) | 10V | 42mOhm @ 43A, 10V | 4V @ 250µA | 175 nC @ 20 V | ±20V | 2730 pF @ 25 V | - | 230W (Tc) | ||||||||||||||
|
PSMN7R8-120PSQ | - | |
2412 | 0.00000000 | NXP USA Inc. | - | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK | download | EAR99 | 8541.29.0095 | 177 | N-Channel | 120 V | 70A (Tc) | 10V | 7.9mOhm @ 25A, 10V | 4V @ 1mA | 167 nC @ 10 V | ±20V | 9473 pF @ 60 V | - | 349W (Tc) | ||||||||||||||
 |
BUK7Y98-80E,115 | - | |
2693 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||
 |
FCH077N65F-F085 | 6.1300 | |
148 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, SuperFET® II | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 | download | EAR99 | 8541.29.0095 | 49 | N-Channel | 650 V | 54A (Tc) | 10V | 77mOhm @ 27A, 10V | 5V @ 250µA | 164 nC @ 10 V | ±20V | 7162 pF @ 25 V | - | 481W (Tc) | ||||||||||||||
|
AUIRFP4409 | 3.1200 | |
8 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247AC | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 300 V | 38A (Tc) | 10V | 69mOhm @ 24A, 10V | 5V @ 250µA | 125 nC @ 10 V | ±20V | 5168 pF @ 50 V | - | 341W (Tc) | ||||||||||||||
 |
AUIRFR48Z | - | |
2017 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 55 V | 42A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 50µA | 60 nC @ 10 V | ±20V | 1720 pF @ 25 V | - | 91W (Tc) | ||||||||||||||
|
AUIRLR3410TR | 1.1100 | |
14 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | AUIRLR3410 | MOSFET (Metal Oxide) | D-Pak | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 100 V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34 nC @ 5 V | ±16V | 800 pF @ 25 V | - | 79W (Tc) | |||||||||||||
|
AFV09P350-04GNR3 | 233.1000 | |
253 | 0.00000000 | Freescale Semiconductor | - | Bulk | Active | 105 V | Surface Mount | OM-780G-4L | 920MHz | LDMOS | OM-780G-4L | download | 5A991G | 8541.29.0075 | 1 | Dual | - | 860 mA | 100W | 19.5dB | - | 48 V | |||||||||||||||||
|
IPN65R1K5CE | - | |
8287 | 0.00000000 | Infineon Technologies | CoolMOS™ CE | Bulk | Active | -40°C ~ 150°C (TJ) | Surface Mount | TO-261-3 | MOSFET (Metal Oxide) | PG-SOT223 | download | 0000.00.0000 | 857 | N-Channel | 650 V | 5.2A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 225 pF @ 100 V | - | 5W (Tc) | |||||||||||||||
|
IRLR024NPBF | 1.0000 | |
1089 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 55 V | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | 2V @ 250µA | 15 nC @ 5 V | ±16V | 480 pF @ 25 V | - | 45W (Tc) | ||||||||||||||
 |
FDMA1023PZ | - | |
3139 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-VDFN Exposed Pad | FDMA1023 | MOSFET (Metal Oxide) | 700mW | 6-MicroFET (2x2) | download | EAR99 | 8542.39.0001 | 1 | 2 P-Channel (Dual) | 20V | 3.7A | 72mOhm @ 3.7A, 4.5V | 1.5V @ 250µA | 12nC @ 4.5V | 655pF @ 10V | Logic Level Gate | |||||||||||||||
 |
FDMA6023PZT | 0.3800 | |
369 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | FDMA6023 | MOSFET (Metal Oxide) | 700mW | 6-MicroFET (2x2) | download | EAR99 | 8542.39.0001 | 792 | 2 P-Channel (Dual) | 20V | 3.6A | 60mOhm @ 3.6A, 4.5V | 1.5V @ 250µA | 17nC @ 4.5V | 885pF @ 10V | Logic Level Gate | |||||||||||||||
 |
NVMD3P03R2G | - | |
3256 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | NVMD3 | MOSFET (Metal Oxide) | 730mW (Ta) | 8-SOIC | download | EAR99 | 8542.39.0001 | 1 | 2 P-Channel (Dual) | 30V | 2.34A (Tj) | 85mOhm @ 3.05A, 10V | 2.5V @ 250µA | 25nC @ 10V | 750pF @ 24V | - | |||||||||||||||
 |
NTD24N06LT4G | - | |
9924 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | NTD24 | MOSFET (Metal Oxide) | DPAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 60 V | 24A (Ta) | 5V | 45mOhm @ 10A, 5V | 2V @ 250µA | 32 nC @ 5 V | ±15V | 1140 pF @ 25 V | - | 1.36W (Ta), 62.5W (Tj) | |||||||||||||
|
BUK7Y20-30B115 | 1.0000 | |
7818 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||
|
IPA50R250CP | 1.5600 | |
220 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | PG-TO220-3-31 | download | EAR99 | 8542.39.0001 | 220 | N-Channel | 500 V | 13A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 520µA | 36 nC @ 10 V | ±20V | 1420 pF @ 100 V | - | 33W (Tc) | ||||||||||||||
 |
BUK7Y65-100EX | - | |
6099 | 0.00000000 | NXP USA Inc. | TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | BUK7Y65 | MOSFET (Metal Oxide) | LFPAK56, Power-SO8 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 100 V | 19A (Tc) | 10V | 65mOhm @ 5A, 10V | 4V @ 1mA | 17.8 nC @ 10 V | ±20V | 1023 pF @ 25 V | - | 64W (Tc) | |||||||||||||
|
PSMN017-30BL118 | - | |
9646 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | EAR99 | 8541.29.0095 | 1 | ||||||||||||||||||||||||||||||
 |
IRFU4510PBF | 0.8200 | |
5003 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | IPAK (TO-251AA) | download | EAR99 | 8542.39.0001 | 114 | N-Channel | 100 V | 56A (Tc) | 10V | 13.9mOhm @ 38A, 10V | 4V @ 100µA | 81 nC @ 10 V | ±20V | 3031 pF @ 50 V | - | 143W (Tc) | ||||||||||||||
|
FDMC7200 | - | |
9382 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | FDMC72 | MOSFET (Metal Oxide) | 700mW, 900mW | 8-Power33 (3x3) | download | EAR99 | 8541.29.0095 | 1 | 2 N-Channel (Dual) | 30V | 6A, 8A | 23.5mOhm @ 6A, 10V | 3V @ 250µA | 10nC @ 10V | 660pF @ 15V | Logic Level Gate | |||||||||||||||
 |
FDS86540 | 2.8400 | |
3 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SOIC | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 60 V | 18A (Ta) | 8V, 10V | 4.5mOhm @ 18A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 6410 pF @ 30 V | - | 2.5W (Ta), 5W (Tc) | ||||||||||||||
|
FQU5N60CTU | 0.4300 | |
4 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | I-PAK | download | EAR99 | 8542.39.0001 | 695 | N-Channel | 600 V | 2.8A (Tc) | 10V | 2.5Ohm @ 1.4A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±30V | 670 pF @ 25 V | - | 2.5W (Ta), 49W (Tc) | ||||||||||||||
|
FDD6530A | 1.0000 | |
9011 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252, (D-Pak) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 20 V | 21A (Ta) | 2.5V, 4.5V | 32mOhm @ 8A, 4.5V | 1.2V @ 250µA | 9 nC @ 4.5 V | ±8V | 710 pF @ 10 V | - | 3.3W (Ta), 33W (Tc) | ||||||||||||||
|
BUK7608-40B,118 | 0.7600 | |
1 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | BUK76 | - | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | |||||||||||||||||||||||||||
|
IPP60R360P7 | - | |
7911 | 0.00000000 | Infineon Technologies | - | Bulk | Active | download | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||
|
IPP65R065C7 | - | |
4034 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | 0000.00.0000 | 1 | N-Channel | 650 V | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4V @ 850µA | 64 nC @ 10 V | ±20V | 3020 pF @ 400 V | - | 171W (Tc) | |||||||||||||||
 |
IRF7905TRPBF | - | |
7911 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | IRF7905 | MOSFET (Metal Oxide) | 2W | 8-SO | download | EAR99 | 8542.39.0001 | 407 | 2 N-Channel (Dual) | 30V | 7.8A, 8.9A | 21.8mOhm @ 7.8A, 10V | 2.25V @ 25µA | 6.9nC @ 4.5V | 600pF @ 15V | Logic Level Gate | |||||||||||||||
 |
FDMS3622S | - | |
2375 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | FDMS3622 | MOSFET (Metal Oxide) | 1W | Power56 | download | EAR99 | 8542.39.0001 | 1 | 2 N-Channel (Dual) Asymmetrical | 25V | 17.5A, 34A | 5mOhm @ 17.5A, 10V | 2V @ 250µA | 26nC @ 10V | 1570pF @ 13V | Logic Level Gate |
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