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FETs, MOSFETs(55612)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PSMN014-80YLX | 1.0000 |  |
6224 | 0.00000000 | NXP USA Inc. | - | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | MOSFET (Metal Oxide) | LFPAK56, Power-SO8 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 80 V | 62A (Tc) | 5V, 10V | 14mOhm @ 15A, 10V | 2.1V @ 1mA | 28.9 nC @ 5 V | ±20V | 4640 pF @ 25 V | - | 147W (Tc) | ||||||||||||||||
 |
BS170 | - | |
9226 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | MOSFET (Metal Oxide) | TO-92 | download | 0000.00.0000 | 1 | N-Channel | 60 V | 300mA (Ta) | 5Ohm @ 200mA, 10V | 3V @ 1mA | 60 pF @ 10 V | - | ||||||||||||||||||||||
 |
IRFU7440PBF | 0.7300 | |
108 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | IPAK (TO-251AA) | download | EAR99 | 8542.39.0001 | 409 | N-Channel | 40 V | 90A (Tc) | 6V, 10V | 2.4mOhm @ 90A, 10V | 3.9V @ 100µA | 134 nC @ 10 V | ±20V | 4610 pF @ 25 V | - | 140W (Tc) | ||||||||||||||||
 |
FDMS86152 | 2.6400 | |
1 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-PQFN (5x6) | download | EAR99 | 8542.39.0001 | 114 | N-Channel | 100 V | 14A (Ta), 45A (Tc) | 6V, 10V | 6mOhm @ 14A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | 3370 pF @ 50 V | - | 2.7W (Ta), 125W (Tc) | ||||||||||||||||
|
PSMN2R9-25YLC | 1.0000 | |
9589 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||
 |
PMV50ENEA215 | - | |
4345 | 0.00000000 | NXP Semiconductors | * | Bulk | Active | PMV50 | download | EAR99 | 8541.29.0095 | 1 | |||||||||||||||||||||||||||||||
 |
BLF6G27LS-40P,112 | 75.6200 | |
40 | 0.00000000 | NXP USA Inc. | - | Bulk | Active | 65 V | Surface Mount | SOT-1121B | 2.5GHz ~ 2.7GHz | LDMOS | LDMOST | download | EAR99 | 8541.29.0075 | 4 | Dual, Common Source | - | 450 mA | 12W | 17.5dB | - | 28 V | |||||||||||||||||||
 |
TK110A65Z,S4X | 4.2300 | |
51 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK110A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 45W (Tc) | |||||||||||||
|
BLM10D1822-61ABGZ | 50.4100 | |
173 | 0.00000000 | Ampleon USA Inc. | BLM | Tray | Active | 65 V | Surface Mount | OMP-400-8G-1 | BLM10 | 1.8GHz ~ 2.2GHz | LDMOS | OMP-400-8G-1 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 90 | Dual, Common Source | 1.4µA | 108 mA | 48.3dBm | 28.5dB | - | 28 V | |||||||||||||||
 |
TP65H480G4JSG-TR | 3.9800 | |
3 | 0.00000000 | Transphorm | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 3-SMD, Flat Lead | TP65H480 | GaNFET (Cascode Gallium Nitride FET) | 3-PQFN (5x6) | download | 3 (168 Hours) | 1707-TP65H480G4JSG-TR | EAR99 | 8541.29.0095 | 4,000 | N-Channel | 650 V | 3.6A (Tc) | 8V | 560mOhm @ 3.4A, 8V | 2.8V @ 500µA | 9 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 13.2W (Tc) | |||||||||||||
 |
UJ4C075018K4S | 18.8600 | |
1 | 0.00000000 | Qorvo | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | UJ4C075 | SiCFET (Cascode SiCJFET) | TO-247-4 | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | 2312-UJ4C075018K4S | EAR99 | 8541.29.0095 | 30 | N-Channel | 750 V | 81A (Tc) | 23mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1422 pF @ 100 V | - | 385W (Tc) | ||||||||||||
 |
UJ4C075060K3S | 9.6300 | |
16 | 0.00000000 | Qorvo | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | UJ4C075 | SiCFET (Cascode SiCJFET) | TO-247-3 | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | 2312-UJ4C075060K3S | EAR99 | 8541.29.0095 | 30 | N-Channel | 750 V | 28A (Tc) | 74mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1422 pF @ 100 V | - | 155W (Tc) | ||||||||||||
 |
SIZ256DT-T1-GE3 | 1.3100 | |
7571 | 0.00000000 | Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | SIZ256 | MOSFET (Metal Oxide) | 4.3W (Ta), 33W (Tc) | 8-PowerPair® (3.3x3.3) | download | 1 (Unlimited) | 742-SIZ256DT-T1-GE3TR | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 70V | 11.5A (Ta), 31.8A (Tc) | 17.6mOhm @ 7A, 4.5V | 1.5V @ 250µA | 27nC @ 10V | 1060pF @ 35V | - | |||||||||||||||
 |
SIHP6N80AE-GE3 | 1.6900 | |
971 | 0.00000000 | Vishay Siliconix | E | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | SIHP6 | MOSFET (Metal Oxide) | TO-220AB | download | 1 (Unlimited) | 742-SIHP6N80AE-GE3 | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 5A (Tc) | 950mOhm @ 2A, 10V | 4V @ 250µA | 22.5 nC @ 10 V | ±30V | 422 pF @ 100 V | - | 62.5W (Tc) | ||||||||||||||
 |
SIA938DJT-T1-GE3 | 0.6700 | |
11 | 0.00000000 | Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Dual | SIA938 | MOSFET (Metal Oxide) | 1.9W (Ta), 7.8W (Tc) | PowerPAK® SC-70-6 Dual | download | 1 (Unlimited) | 742-SIA938DJT-T1-GE3TR | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 4.5A (Ta), 4.5A (Tc) | 21.5mOhm @ 5A, 10V | 1.5V @ 250µA | 11.5nC @ 10V | 425pF @ 10V | - | |||||||||||||||
 |
RX3G07CGNC16 | 2.4700 | |
602 | 0.00000000 | Rohm Semiconductor | - | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | RX3G07 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 846-RX3G07CGNC16 | EAR99 | 8541.29.0095 | 50 | N-Channel | 40 V | 70A (Tc) | 4.7mOhm @ 70A, 10V | 2.5V @ 500µA | 32 nC @ 10 V | ±20V | 2410 pF @ 20 V | - | 78W (Tc) | ||||||||||||
 |
RS1G201ATTB1 | 2.8600 | |
4 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | RS1G | MOSFET (Metal Oxide) | 8-HSOP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 40 V | 20A (Ta), 78A (Tc) | 5.2mOhm @ 20A, 10V | 2.5V @ 1mA | 130 nC @ 10 V | ±20V | 6890 pF @ 20 V | - | 3W (Ta), 40W (Tc) | |||||||||||||
|
2SJ559-T1-A | 0.1500 | |
9 | 0.00000000 | Renesas Electronics America Inc | - | Bulk | Active | Surface Mount | SC-75, SOT-416 | MOSFET (Metal Oxide) | SC-75-3, USM | download | EAR99 | 8541.21.0095 | 1 | P-Channel | 30 V | 100mA (Ta) | 13Ohm @ 10mA, 10V | 1.7V @ 10µA | 5000 pF @ 3 V | - | |||||||||||||||||||||
 |
IRFS3806PBF | 0.3500 | |
7892 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8542.39.0001 | 290 | N-Channel | 60 V | 43A (Tc) | 10V | 15.8mOhm @ 25A, 10V | 4V @ 50µA | 30 nC @ 10 V | ±20V | 1150 pF @ 50 V | - | 71W (Tc) | ||||||||||||||||
 |
BUK98150-55A/CU,135 | - | |
4243 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | download | EAR99 | 8541.29.0095 | 1 | ||||||||||||||||||||||||||||||||
 |
AUIRF7343QTR | 1.0000 | |
8885 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | AUIRF7343 | MOSFET (Metal Oxide) | 2W | 8-SOIC | download | EAR99 | 8541.29.0095 | 1 | N and P-Channel | 55V | 4.7A, 3.4A | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 36nC @ 10V | 740pF @ 25V | Logic Level Gate | |||||||||||||||||
|
BUK7631-100E,118 | 0.6100 | |
1 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 532 | N-Channel | 100 V | 34A (Tc) | 10V | 31mOhm @ 10A, 10V | 4V @ 1mA | 29.4 nC @ 10 V | ±20V | 1738 pF @ 25 V | - | 96W (Tc) | ||||||||||||||||
 |
FDB8896 | 0.9100 | |
15 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK (TO-263) | download | EAR99 | 8542.39.0001 | 330 | N-Channel | 30 V | 19A (Ta), 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | 2.5V @ 250µA | 67 nC @ 10 V | ±20V | 2525 pF @ 15 V | - | 80W (Tc) | ||||||||||||||||
 |
FQPF6N80T | 1.1600 | |
5 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 800 V | 3.3A (Tc) | 10V | 1.95Ohm @ 1.65A, 10V | 5V @ 250µA | 31 nC @ 10 V | ±30V | 1500 pF @ 25 V | - | 51W (Tc) | ||||||||||||||||
|
AUIRF4104STRL | 1.4000 | |
456 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 75A (Tc) | 5.5mOhm @ 75A, 10V | 4V @ 250µA | 100 nC @ 10 V | 3000 pF @ 25 V | - | 140W (Tc) | ||||||||||||||||||
 |
FCH25N60N | 3.7500 | |
7 | 0.00000000 | Fairchild Semiconductor | SupreMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 | download | EAR99 | 8542.39.0001 | 80 | N-Channel | 600 V | 25A (Tc) | 10V | 126mOhm @ 12.5A, 10V | 4V @ 250µA | 74 nC @ 10 V | ±30V | 3352 pF @ 100 V | - | 216W (Tc) | ||||||||||||||||
 |
BUK7Y7R2-60EX | - | |
2919 | 0.00000000 | NXP USA Inc. | - | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | MOSFET (Metal Oxide) | LFPAK56, Power-SO8 | download | 0000.00.0000 | 1 | N-Channel | 60 V | - | 10V | - | - | ±20V | - | 167W (Tc) | |||||||||||||||||||
|
FDD8780 | 0.4100 | |
999 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252, (D-Pak) | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 25 V | 35A (Tc) | 4.5V, 10V | 8.5mOhm @ 35A, 10V | 2.5V @ 250µA | 29 nC @ 10 V | ±20V | 1440 pF @ 13 V | - | 50W (Tc) | ||||||||||||||||
|
2SK3377-ZK-E1-AY | 0.6800 | |
1 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | download | EAR99 | 8541.29.0095 | 1 | ||||||||||||||||||||||||||||||||
|
2SK3666-2-TB-E | - | |
9851 | 0.00000000 | Sanyo | * | Bulk | Active | download | EAR99 | 8541.21.0095 | 1 |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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