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FETs, MOSFETs(56295)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | REACH Status | ECCN | HTSUS | Standard Package | Configuration | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDD6680AS | 0.5200 |  |
10 | 0.00000000 | Fairchild Semiconductor | PowerTrench®, SyncFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252, (D-Pak) | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 30 V | 55A (Ta) | 4.5V, 10V | 10.5mOhm @ 12.5A, 10V | 3V @ 1mA | 29 nC @ 10 V | ±20V | 1200 pF @ 15 V | - | 60W (Ta) | ||||||
 |
IRF6648TRPBF | - | |
3453 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MN | MOSFET (Metal Oxide) | DIRECTFET™ MN | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 60 V | 86A (Tc) | 10V | 7mOhm @ 17A, 10V | 4.9V @ 150µA | 50 nC @ 10 V | ±20V | 2120 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | ||||||
 |
FDPF12N60NZ | - | |
9919 | 0.00000000 | Fairchild Semiconductor | UniFET-II™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | 0000.00.0000 | 1 | N-Channel | 600 V | 12A (Tc) | 10V | 650mOhm @ 6A, 10V | 5V @ 250µA | 34 nC @ 10 V | ±30V | 1676 pF @ 25 V | - | 39W (Tc) | |||||||
|
BUK7Y13-40B,115 | - | |
4067 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | BUK7 | - | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | |||||||||||||||||||
 |
FDMC2674 | - | |
3709 | 0.00000000 | Fairchild Semiconductor | UniFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-MLP (3.3x3.3) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 220 V | 1A (Ta), 7A (Tc) | 10V | 366mOhm @ 1A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 1180 pF @ 100 V | - | 2.1W (Ta), 42W (Tc) | ||||||
 |
IPW65R019C7 | 1.0000 | |
2615 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | PG-TO247-3 | download | 0000.00.0000 | 1 | N-Channel | 650 V | 75A (Tc) | 10V | 19mOhm @ 58.3A, 10V | 4V @ 2.92mA | 215 nC @ 10 V | ±20V | 9900 pF @ 400 V | - | 446W (Tc) | |||||||
 |
IRFF9133 | - | |
1380 | 0.00000000 | International Rectifier | - | Bulk | Active | - | Through Hole | TO-205AF Metal Can | MOSFET (Metal Oxide) | TO-205AF (TO-39) | download | EAR99 | 8542.39.0001 | 70 | N-Channel | 80 V | 6.5A | - | - | - | - | - | 25W | ||||||||
|
IRF332 | 1.1900 | |
9430 | 0.00000000 | International Rectifier | - | Bulk | Active | - | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | TO-204AA (TO-3) | download | EAR99 | 8542.39.0001 | 49 | N-Channel | 400 V | 4.5A | - | - | - | - | - | 75W | ||||||||
|
IRF4104SPBF | 1.0000 | |
2451 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | 0000.00.0000 | 1 | N-Channel | 40 V | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 140W (Tc) | |||||||
 |
FDA69N25 | - | |
2197 | 0.00000000 | onsemi | UniFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | FDA69 | MOSFET (Metal Oxide) | TO-3PN | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 250 V | 69A (Tc) | 10V | 41mOhm @ 34.5A, 10V | 5V @ 250µA | 100 nC @ 10 V | ±30V | 4640 pF @ 25 V | - | 480W (Tc) | |||||
 |
FQS4900TF | 0.5800 | |
36 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | FQS4900 | MOSFET (Metal Oxide) | 2W | 8-SOIC | download | EAR99 | 8542.39.0001 | 1 | N and P-Channel | 60V, 300V | 1.3A, 300mA | 550mOhm @ 650mA, 10V | 1.95V @ 20mA | 2.1nC @ 5V | - | - | |||||||
|
IRFF1210 | 1.0000 | |
9966 | 0.00000000 | International Rectifier | - | Bulk | Active | download | 0000.00.0000 | 1 | |||||||||||||||||||||||
 |
PH0930DLS,115 | 0.2000 | |
12 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | - | 0000.00.0000 | 1 | |||||||||||||||||||||||
 |
PMPB85ENEA/F,115 | 0.1000 | |
3 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 3,000 | |||||||||||||||||||||||
 |
AUIRF7379QTR | - | |
8698 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | AUIRF7379 | MOSFET (Metal Oxide) | 2.5W | 8-SOIC | download | EAR99 | 8541.29.0095 | 1 | N and P-Channel | 30V | 5.8A, 4.3A | 45mOhm @ 5.8A, 10V | 3V @ 250µA | 25nC @ 10V | 520pF @ 25V | Logic Level Gate | |||||||
 |
FCH043N60 | 11.2600 | |
50 | 0.00000000 | Fairchild Semiconductor | SuperFET® II | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247-3 | download | EAR99 | 8542.39.0001 | 27 | N-Channel | 600 V | 75A (Tc) | 10V | 43mOhm @ 38A, 10V | 3.5V @ 250µA | 215 nC @ 10 V | ±20V | 12225 pF @ 400 V | - | 592W (Tc) | ||||||
|
BUK965R4-40E,118 | 0.6800 | |
1 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 442 | N-Channel | 40 V | 75A (Tc) | 5V | 4.4mOhm @ 25A, 10V | 2.1V @ 1mA | 33.9 nC @ 5 V | ±10V | 4483 pF @ 25 V | - | 137W (Tc) | ||||||
 |
FCPF260N60E | 1.8500 | |
190 | 0.00000000 | Fairchild Semiconductor | SuperFET® II | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 600 V | 15A (Tc) | 10V | 260mOhm @ 7.5A, 10V | 3.5V @ 250µA | 62 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 36W (Tc) | ||||||
 |
FQI8N60CTU | 1.1800 | |
6 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | FQI8N60 | MOSFET (Metal Oxide) | I2PAK (TO-262) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 600 V | 7.5A (Tc) | 10V | 1.2Ohm @ 3.75A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1255 pF @ 25 V | - | 3.13W (Ta), 147W (Tc) | |||||
|
FDMS3606S | - | |
7384 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | FDMS3606 | MOSFET (Metal Oxide) | 1W | 8-PQFN (5x6) | download | EAR99 | 8542.39.0001 | 1 | 2 N-Channel (Dual) Asymmetrical | 30V | 13A, 27A | 8mOhm @ 13A, 10V | 2.7V @ 250µA | 29nC @ 10V | 1785pF @ 15V | Logic Level Gate | |||||||
 |
FDB035AN06A0 | 2.9500 | |
1 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK (TO-263) | download | EAR99 | 8542.39.0001 | 102 | N-Channel | 60 V | 22A (Ta), 80A (Tc) | 6V, 10V | 3.5mOhm @ 80A, 10V | 4V @ 250µA | 124 nC @ 10 V | ±20V | 6400 pF @ 25 V | - | 310W (Tc) | ||||||
 |
IRF7607TRPBF | - | |
8338 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | IRF7607 | MOSFET (Metal Oxide) | Micro8™ | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 20 V | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22 nC @ 5 V | ±12V | 1310 pF @ 15 V | - | 1.8W (Ta) | |||||
 |
PH1225AL,115 | 0.2200 | |
24 | 0.00000000 | NXP USA Inc. | TrenchMOS™ | Bulk | Active | - | Surface Mount | SOT-1023, 4-LFPAK | MOSFET (Metal Oxide) | LFPAK56; Power-SO8 | - | EAR99 | 8541.29.0095 | 1,374 | N-Channel | 25 V | 100A (Tc) | 1.2mOhm @ 15A, 10V | 2.15V @ 1mA | 105 nC @ 10 V | 6380 pF @ 12 V | - | - | ||||||||
 |
PMPB215ENEA,115 | - | |
9327 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | |||||||||||||||||||||||
|
NX2301P215 | - | |
7829 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | |||||||||||||||||||||||
|
SI4435DY | - | |
7057 | 0.00000000 | Fairchild Semiconductor | HEXFET® | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | MOSFET (Metal Oxide) | 8-SO | download | EAR99 | 8541.29.0095 | 1 | P-Channel | 30 V | 8A (Tc) | 4.5V, 10V | 20mOhm @ 8A, 10V | 1V @ 250µA | 60 nC @ 10 V | ±20V | 2320 pF @ 15 V | - | 2.5W (Ta) | ||||||
|
2SJ361RYTR-E | 0.5800 | |
7 | 0.00000000 | Renesas Electronics America Inc | * | Bulk | Active | download | EAR99 | 8541.29.0095 | 1 | ||||||||||||||||||||||
 |
PSMN7R8-120PS127 | - | |
1684 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | |||||||||||||||||||||||
 |
IRFSL7530PBF | - | |
5002 | 0.00000000 | International Rectifier | HEXFET®, StrongIRFET™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | TO-262 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 60 V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411 nC @ 10 V | ±20V | 13703 pF @ 25 V | - | 375W (Tc) | ||||||
 |
FDS6699S | - | |
6735 | 0.00000000 | Fairchild Semiconductor | PowerTrench®, SyncFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | FDS6699 | MOSFET (Metal Oxide) | 8-SOIC | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 30 V | 21A (Ta) | 4.5V, 10V | 3.6mOhm @ 21A, 10V | 3V @ 1mA | 91 nC @ 10 V | ±20V | 3610 pF @ 15 V | - | 2.5W (Ta) |
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