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FETs, MOSFETs(56295)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IPT60R145CFD7XTMA1 | 5.0500 |  |
4725 | 0.00000000 | Infineon Technologies | CoolMOS™ CFD7 | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerSFN | IPT60R145 | MOSFET (Metal Oxide) | PG-HSOF-8-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 19A (Tc) | 10V | 145mOhm @ 6A, 10V | 4.5V @ 300µA | 28 nC @ 10 V | ±20V | 1199 pF @ 400 V | - | 116W (Tc) | ||||||||||||
 |
IPP65R115CFD7AAKSA1 | 6.6200 | |
28 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, CoolMOS™ CFD7 | Tube | Active | -40°C ~ 150°C (TJ) | Through Hole | TO-220-3 | IPP65R115 | MOSFET (Metal Oxide) | PG-TO220-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 21A (Tc) | 10V | 115mOhm @ 9.7A, 10V | 4.5V @ 490µA | 41 nC @ 10 V | ±20V | 1950 pF @ 400 V | - | 114W (Tc) | ||||||||||||
 |
IPBE65R230CFD7AATMA1 | 5.3700 | |
3 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, CoolMOS™ CFD7A | Tape & Reel (TR) | Active | -40°C ~ 150°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | IPBE65 | MOSFET (Metal Oxide) | PG-TO263-7-3-10 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 650 V | 11A (Tc) | 10V | 230mOhm @ 5.2A, 10V | 4.5V @ 260µA | 23 nC @ 10 V | ±20V | 1044 pF @ 400 V | - | 63W (Tc) | ||||||||||||
|
IPBE65R075CFD7AATMA1 | 11.6200 | |
4796 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, CoolMOS™ CFD7A | Tape & Reel (TR) | Active | -40°C ~ 150°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | IPBE65 | MOSFET (Metal Oxide) | PG-TO263-7-3-10 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 650 V | 32A (Tc) | 10V | 75mOhm @ 16.4A, 10V | 4.5V @ 820µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 171W (Tc) | ||||||||||||
 |
IRF730 | 1.9900 | |
753 | 0.00000000 | NTE Electronics, Inc | - | Bag | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | RoHS non-compliant | 1 (Unlimited) | 2368-IRF730 | EAR99 | 9999.99.9999 | 1 | N-Channel | 400 V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 74W (Tc) | |||||||||||||
 |
BLP15H9S10GZ | 19.4000 | |
2 | 0.00000000 | Ampleon USA Inc. | BLP | Tape & Reel (TR) | Active | 104 V | Surface Mount | SOT-1483-1 | BLP15 | 1.4GHz | LDMOS | SOT1483-1 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 500 | Dual, Common Source | 1.4µA | 60 mA | 10W | 22dB | - | 50 V | |||||||||||||||
 |
BLP15H9S10Z | 19.4000 | |
9107 | 0.00000000 | Ampleon USA Inc. | BLP | Tape & Reel (TR) | Active | 104 V | Surface Mount | SOT-1482-1 | BLP15 | 1.4GHz | LDMOS | SOT-1482-1 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 500 | Dual, Common Source | 1.4µA | 60 mA | 10W | 22dB | - | 50 V | |||||||||||||||
 |
TQM110NB04DCR RLG | 3.7100 | |
4 | 0.00000000 | Taiwan Semiconductor Corporation | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank | 8-PowerTDFN | TQM110 | MOSFET (Metal Oxide) | 2.5W (Ta), 58W (Tc) | 8-PDFNU (5x6) | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | 2 N-Channel (Dual) | 40V | 10A (Ta), 50A (Tc) | 11mOhm @ 10A, 10V | 3.8V @ 250µA | 26nC @ 10V | 1354pF @ 20V | - | ||||||||||||||
 |
G2R1000MT17J | 6.4400 | |
14 | 0.00000000 | GeneSiC Semiconductor | G2R™ | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | G2R1000 | SiCFET (Silicon Carbide) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | 1242-G2R1000MT17J | EAR99 | 8541.29.0095 | 50 | N-Channel | 1700 V | 3A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 4V @ 2mA | +20V, -10V | 139 pF @ 1000 V | - | 54W (Tc) | |||||||||||||
 |
G3R75MT12K | 10.7700 | |
1 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | G3R75 | SiCFET (Silicon Carbide) | TO-247-4 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R75MT12K | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 41A (Tc) | 15V | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | ±15V | 1560 pF @ 800 V | - | 207W (Tc) | ||||||||||||
 |
G3R160MT17D | 12.2400 | |
9458 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | G3R160 | SiCFET (Silicon Carbide) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R160MT17D | EAR99 | 8541.29.0095 | 30 | N-Channel | 1700 V | 21A (Tc) | 15V | 208mOhm @ 12A, 15V | 2.7V @ 5mA | 51 nC @ 15 V | ±15V | 1272 pF @ 1000 V | - | 175W (Tc) | ||||||||||||
|
G3R20MT17N | 135.4600 | |
47 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | G3R20 | SiCFET (Silicon Carbide) | SOT-227 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R20MT17N | EAR99 | 8541.29.0095 | 10 | N-Channel | 1700 V | 100A (Tc) | 15V | 26mOhm @ 75A, 15V | 2.7V @ 15mA | 400 nC @ 15 V | ±15V | 10187 pF @ 1000 V | - | 523W (Tc) | ||||||||||||
|
G3R350MT12J | 5.5100 | |
5 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | G3R350 | SiCFET (Silicon Carbide) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R350MT12J | EAR99 | 8541.29.0095 | 50 | N-Channel | 1200 V | 11A (Tc) | 15V | 420mOhm @ 4A, 15V | 2.69V @ 2mA | 12 nC @ 15 V | ±15V | 334 pF @ 800 V | - | 75W (Tc) | ||||||||||||
|
G2R1000MT17D | 5.4400 | |
717 | 0.00000000 | GeneSiC Semiconductor | G2R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | G2R1000 | SiCFET (Silicon Carbide) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | 1242-G2R1000MT17D | EAR99 | 8541.29.0095 | 30 | N-Channel | 1700 V | 5A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 5.5V @ 500µA | 11 nC @ 20 V | +25V, -10V | 111 pF @ 1000 V | - | 44W (Tc) | ||||||||||||
 |
IQE013N04LM6ATMA1 | 2.8200 | |
13 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | IQE013 | MOSFET (Metal Oxide) | PG-TSON-8-4 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 31A (Ta), 205A (Tc) | 1.35mOhm @ 20A, 10V | 2V @ 51µA | 55 nC @ 10 V | ±20V | 3900 pF @ 20 V | - | 2.5W (Ta), 107W (Tc) | |||||||||||||
 |
IPP65R041CFD7XKSA1 | 12.0400 | |
19 | 0.00000000 | Infineon Technologies | CoolMOS™ CFD7 | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | IPP65R041 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 50A (Tc) | 10V | 41mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | ||||||||||||
|
BLM9D3336-12AMZ | 21.6000 | |
719 | 0.00000000 | Ampleon USA Inc. | - | Tape & Reel (TR) | Active | BLM9 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.39.0001 | 1,000 | ||||||||||||||||||||||||||||
|
BLM9D1920-08AMZ | 20.0900 | |
860 | 0.00000000 | Ampleon USA Inc. | - | Tape & Reel (TR) | Active | 65 V | Surface Mount | 20-VLGA Exposed Pad | BLM9 | 1.88GHz ~ 2.025GHz | LDMOS | 20-LGA (7x7) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.39.0001 | 1,000 | - | - | - | 26.8dB | - | |||||||||||||||||
 |
AUIRF7732S2TR | 0.9400 | |
3 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | DirectFET™ Isometric SC | MOSFET (Metal Oxide) | DIRECTFET™ SC | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 14A (Ta) | 10V | 6.95mOhm @ 33A, 10V | 4V @ 50µA | 45 nC @ 10 V | ±20V | 1700 pF @ 25 V | - | 2.5W (Ta), 41W (Tc) | ||||||||||||||||
|
64-2084PBF | 1.0000 | |
1313 | 0.00000000 | Infineon Technologies | * | Bulk | Active | - | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||
|
IRFP250S2497 | - | |
7461 | 0.00000000 | Harris Corporation | * | Bulk | Active | - | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||
 |
FDD8878 | 0.4900 | |
30 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252, (D-Pak) | download | EAR99 | 8542.39.0001 | 611 | N-Channel | 30 V | 11A (Ta), 40A (Tc) | 4.5V, 10V | 15mOhm @ 35A, 10V | 2.5V @ 250µA | 26 nC @ 10 V | ±20V | 880 pF @ 15 V | - | 40W (Tc) | ||||||||||||||||
 |
BUK7Y9R9-80EX | 1.0000 | |
7555 | 0.00000000 | NXP USA Inc. | TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | MOSFET (Metal Oxide) | LFPAK56, Power-SO8 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 80 V | 89A (Tc) | 10V | 98mOhm @ 5A, 10V | 4V @ 1mA | 51.6 nC @ 10 V | ±20V | 498 pF @ 25 V | - | 195W (Tc) | ||||||||||||||||
|
BUK9675-100A118 | - | |
5338 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||
|
IRFB3077PBF | - | |
1405 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 75 V | 120A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 220 nC @ 10 V | ±20V | 9400 pF @ 50 V | - | 370W (Tc) | ||||||||||||||||
 |
FCH190N65F-F085 | - | |
9438 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, SuperFET® II | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 650 V | 20.6A (Tc) | 10V | 190mOhm @ 27A, 10V | 5V @ 250µA | 82 nC @ 10 V | ±20V | 3181 pF @ 25 V | - | 208W (Tc) | ||||||||||||||||
|
FCP125N60E | - | |
6733 | 0.00000000 | Fairchild Semiconductor | SuperFET® II | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | FCP125 | MOSFET (Metal Oxide) | TO-220-3 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 600 V | 29A (Tc) | 10V | 125mOhm @ 14.5A, 10V | 3.5V @ 250µA | 95 nC @ 10 V | ±20V | 2990 pF @ 380 V | - | 278W (Tc) | |||||||||||||||
 |
FDD16AN08A0 | - | |
5862 | 0.00000000 | Fairchild Semiconductor | UltraFET™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 75 V | 9A (Ta), 50A (Tc) | 6V, 10V | 16mOhm @ 50A, 10V | 4V @ 250µA | 47 nC @ 10 V | ±20V | 1874 pF @ 25 V | - | 135W (Tc) | |||||||||||||||||
|
BUK961R6-40E,118 | - | |
9661 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 120A (Tc) | 5V | 1.4mOhm @ 25A, 10V | 2.1V @ 1mA | 120 nC @ 5 V | ±10V | 16400 pF @ 25 V | - | 357W (Tc) | ||||||||||||||||
|
A2V09H400-04NR3528 | 103.4700 | |
204 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | EAR99 | 8541.29.0075 | 1 |
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