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FETs, MOSFETs(56295)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRF6795MTRPBF | 1.1300 |  |
36 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MX | MOSFET (Metal Oxide) | DIRECTFET™ MX | download | EAR99 | 8541.29.0095 | 267 | N-Channel | 25 V | 32A (Ta), 160A (Tc) | 4.5V, 10V | 1.8mOhm @ 32A, 10V | 2.35V @ 100µA | 53 nC @ 4.5 V | ±20V | 4280 pF @ 13 V | - | 2.8W (Ta), 75W (Tc) | |||||
 |
BUK7613-60E118 | 1.0000 | |
2105 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | EAR99 | 8541.29.0095 | 1 | |||||||||||||||||||||
 |
FDMC7570S | 1.4600 | |
4 | 0.00000000 | Fairchild Semiconductor | PowerTrench®, SyncFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | Power33 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 25 V | 27A (Ta), 40A (Tc) | 4.5V, 10V | 2mOhm @ 27A, 10V | 3V @ 1mA | 68 nC @ 10 V | ±20V | 4410 pF @ 13 V | - | 2.3W (Ta), 59W (Tc) | |||||
|
BUK9637-100E,118 | 0.5600 | |
5896 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0075 | 1 | N-Channel | 100 V | 31A (Tc) | 5V, 10V | 36mOhm @ 10A, 10V | 2.1V @ 1mA | 22.8 nC @ 5 V | ±10V | 2681 pF @ 25 V | - | 96W (Tc) | ||
 |
PSMN013-100PS,127 | 0.9700 | |
5 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | PSMN0 | download | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | ||||||||||||||||||
 |
IPA60R385CP | 1.3400 | |
5670 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | PG-TO220-3-31 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 600 V | 9A (Tc) | 10V | 385mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22 nC @ 10 V | ±20V | 790 pF @ 100 V | - | 31W (Tc) | |||||
 |
PSMN019-100YL,115 | - | |
9403 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | - | 0000.00.0000 | 1 | ||||||||||||||||||||||
|
FQP4N80 | 1.0000 | |
7505 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 800 V | 3.9A (Tc) | 10V | 3.6Ohm @ 1.95A, 10V | 5V @ 250µA | 25 nC @ 10 V | ±30V | 880 pF @ 25 V | - | 130W (Tc) | |||||
|
BSB165N15NZ3G | 1.9200 | |
4 | 0.00000000 | Infineon Technologies | OptiMOS® | Bulk | Active | -40°C ~ 150°C (TJ) | Surface Mount | DirectFET™ Isometric MZ | MOSFET (Metal Oxide) | MG-WDSON-2-9 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 150 V | 9A (Ta), 45A (Tc) | 8V, 10V | 16.5mOhm @ 30A, 10V | 4V @ 110µA | 35 nC @ 10 V | ±20V | 2800 pF @ 75 V | - | 2.8W (Ta), 78W (Tc) | |||||
 |
IRF3709PBF | 0.6200 | |
913 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 30 V | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 41 nC @ 5 V | ±20V | 2672 pF @ 16 V | - | 3.1W (Ta), 120W (Tc) | |||||
 |
SN7002WH6433 | - | |
6635 | 0.00000000 | Infineon Technologies | - | Bulk | Active | download | EAR99 | 8541.21.0095 | 1 | |||||||||||||||||||||
|
PSMN2R2-40BS,118 | 1.0000 | |
7847 | 0.00000000 | NXP USA Inc. | - | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 100A (Tc) | 10V | 2.2mOhm @ 25A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±20V | 8423 pF @ 20 V | - | 306W (Tc) | |||||
|
FDC604P | 1.0000 | |
3775 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | SuperSOT™-6 | download | EAR99 | 8542.39.0001 | 1 | P-Channel | 20 V | 5.5A (Ta) | 1.8V, 4.5V | 33mOhm @ 5.5A, 4.5V | 1.5V @ 250µA | 30 nC @ 4.5 V | ±8V | 1926 pF @ 10 V | - | 1.6W (Ta) | |||||
 |
FDMS86569-F085 | 1.0000 | |
9977 | 0.00000000 | Fairchild Semiconductor | Automotive, AEC-Q101, PowerTrench® | Bulk | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-PQFN (5x6) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 60 V | 65A (Tc) | 10V | 5.6mOhm @ 65A, 10V | 4V @ 250µA | 54 nC @ 10 V | ±20V | 2560 pF @ 30 V | - | 100W (Tj) | |||||
|
AUIRF4104S | 1.4900 | |
9 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | 4V @ 250µA | 100 nC @ 10 V | ±20V | 3000 pF @ 25 V | - | 140W (Tc) | |||||
|
IRFB4019PBF | - | |
6584 | 0.00000000 | International Rectifier | - | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 150 V | 17A (Tc) | 10V | 95mOhm @ 10A, 10V | 4.9V @ 50µA | 20 nC @ 10 V | ±20V | 800 pF @ 50 V | - | 80W (Tc) | |||||
|
AUIRF2805STRL | 1.9700 | |
24 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 55 V | 135A (Tc) | 4.7mOhm @ 104A, 10V | 4V @ 250µA | 230 nC @ 10 V | 5110 pF @ 25 V | - | 200W (Tc) | |||||||
 |
BUK9C10-55BIT/A,11 | - | |
6548 | 0.00000000 | NXP USA Inc. | TrenchPLUS | Bulk | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab) | MOSFET (Metal Oxide) | D2PAK-7 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 55 V | 75A (Ta) | 4.5V, 10V | 9mOhm @ 10A, 10V | 2V @ 1mA | 51 nC @ 5 V | ±15V | 4667 pF @ 25 V | - | 194W (Ta) | |||||
 |
FDD8447L | 0.4300 | |
28 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252, (D-Pak) | download | EAR99 | 8542.39.0001 | 705 | N-Channel | 40 V | 15.2A (Ta), 50A (Tc) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | 3V @ 250µA | 52 nC @ 10 V | ±20V | 1970 pF @ 20 V | - | 3.1W (Ta), 44W (Tc) | |||||
|
IPB100N04S2-04 | 3.8500 | |
499 | 0.00000000 | Infineon Technologies | * | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3-2 | download | EAR99 | 8542.39.0001 | 85 | N-Channel | 40 V | 100A (Tc) | 10V | 3.3mOhm @ 80A, 10V | 4V @ 250µA | 172 nC @ 10 V | ±20V | 5300 pF @ 25 V | - | 300W (Tc) | |||||
|
HUF75545P3_R4932 | - | |
2302 | 0.00000000 | Fairchild Semiconductor | * | Bulk | Active | - | 0000.00.0000 | 1 | ||||||||||||||||||||||
|
IRFB33N15DPBF | 0.8800 | |
404 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | EAR99 | 8542.39.0001 | 404 | N-Channel | 150 V | 33A (Tc) | 10V | 56mOhm @ 20A, 10V | 5.5V @ 250µA | 90 nC @ 10 V | ±30V | 2020 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | |||||
|
BSH114,215 | - | |
1264 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | BSH1 | - | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | ||||||||||||||||||
 |
IRFB7787PBF | 0.6400 | |
747 | 0.00000000 | International Rectifier | HEXFET®, StrongIRFET™ | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | EAR99 | 8542.39.0001 | 466 | N-Channel | 75 V | 76A (Tc) | 6V, 10V | 8.4mOhm @ 46A, 10V | 3.7V @ 100µA | 109 nC @ 10 V | ±20V | 4020 pF @ 25 V | - | 125W (Tc) | |||||
 |
FDP75N08A | - | |
9431 | 0.00000000 | Fairchild Semiconductor | UniFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 75 V | 75A (Tc) | 10V | 11mOhm @ 37.5A, 10V | 4V @ 250µA | 104 nC @ 10 V | ±20V | 4468 pF @ 25 V | - | 137W (Tc) | |||||
 |
IRFM120ATF | - | |
9581 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | SOT-223-4 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 214 | N-Channel | 100 V | 2.3A (Ta) | 10V | 200mOhm @ 1.15A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 480 pF @ 25 V | - | 2.4W (Ta) | ||
 |
FDMS7572S | 0.8400 | |
81 | 0.00000000 | Fairchild Semiconductor | PowerTrench®, SyncFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-PQFN (5x6) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 25 V | 23A (Ta), 49A (Tc) | 4.5V, 10V | 2.9mOhm @ 23A, 10V | 3V @ 1mA | 45 nC @ 10 V | ±20V | 2780 pF @ 13 V | - | 2.5W (Ta), 46W (Tc) | |||||
|
FQP4N20L | 0.5500 | |
2 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | download | EAR99 | 8542.39.0001 | 548 | N-Channel | 200 V | 3.8A (Tc) | 5V, 10V | 1.35Ohm @ 1.9A, 10V | 2V @ 250µA | 5.2 nC @ 5 V | ±20V | 310 pF @ 25 V | - | 45W (Tc) | |||||
|
FDPF770N15A | - | |
3901 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 150 V | 10A (Tc) | 10V | 77mOhm @ 10A, 10V | 4V @ 250µA | 11.2 nC @ 10 V | ±20V | 765 pF @ 75 V | - | 21W (Tc) | |||||
|
IPD80R4K5P7 | - | |
8642 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | PG-TO252-3-341 | download | 0000.00.0000 | 1 | N-Channel | 800 V | 1.5A (Tc) | 10V | 4.5Ohm @ 400mA, 10V | 3.5V @ 200µA | 4 nC @ 10 V | ±20V | 80 pF @ 500 V | - | 13W (Tc) |
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