TP65H070G4LSGB-TR Transphorm

Category

Discrete Semiconductor Products, Transistors, FETs, MOSFETs, Single FETs, MOSFETs,

Mfr

Transphorm

Series

SuperGaN®

Package

Tape & Reel (TR)

Product Status

Active

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

29A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

85mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4.6V @ 700µA

Gate Charge (Qg) (Max) @ Vgs

8.4 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

600 pF @ 400 V

FET Feature

-

Power Dissipation (Max)

96W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (8x8)

Package / Case

8-PowerTDFN

RoHS Status

ROHS3 Compliant

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Standard Package

3,000