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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | DataSheet | RoHS Status | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) |
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P3M171K0G7 | 6.1000 | 7429 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | D2PAK-7 | download | ROHS3 Compliant | REACH Affected | 4237-P3M171K0G7 | EAR99 | 8541.29.0095 | 1 | N-Channel | 1700 V | 7A | 15V | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | +19V, -8V | - | 100W | |||||||||
P3M173K0T3 | 5.0800 | 8943 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-2 | SiCFET (Silicon Carbide) | TO-220-2L | download | ROHS3 Compliant | REACH Affected | 4237-P3M173K0T3 | EAR99 | 8541.29.0095 | 1 | N-Channel | 1700 V | 4A | 15V | 2.6Ohm @ 600mA, 15V | 2.2V @ 600µA (Typ) | +19V, -8V | - | 75W | |||||||||
P3M12025K4 | 28.7400 | 30 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | REACH Affected | 4237-P3M12025K4 | 1 | N-Channel | 1200 V | 112A | 15V | 35mOhm @ 50A, 15V | 2.2V @ 50mA (Typ) | +19V, -8V | - | 577W | |||||||||||
P3D12020GS | 12.4100 | 9668 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-263S | SiC (Silicon Carbide) Schottky | TO-263S | download | ROHS3 Compliant | REACH Affected | 4237-P3D12020GSTR | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 60 µA @ 650 V | -55°C ~ 175°C | 50A | ||||||||||||||||
P3D06020P3 | 8.8400 | 6681 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | SiC (Silicon Carbide) Schottky | TO-3PF-3 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06020P3 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 40A | |||||||||||||||||
P3M17040K4 | 35.8600 | 4762 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | REACH Affected | 4237-P3M17040K4 | 1 | N-Channel | 1700 V | 73A | 15V | 60mOhm @ 50A, 15V | 2.2V @ 50mA (Typ) | +19V, -8V | - | 536W | |||||||||||
P3D06002G2 | 2.1000 | 4224 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-263-2 | SiC (Silicon Carbide) Schottky | TO-263-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06002G2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 10 µA @ 650 V | -55°C ~ 175°C | 7A | ||||||||||||||||
P3D06006G2 | 2.5000 | 3063 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-263-2 | SiC (Silicon Carbide) Schottky | TO-263-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06006G2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 30 µA @ 650 V | -55°C ~ 175°C | 21A | ||||||||||||||||
P3D06040K3 | 13.8400 | 2820 | 0.00000000 | PN Junction Semiconductor | P6D | Tube | Active | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06040K3 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 100 µA @ 650 V | -55°C ~ 175°C | 106A | ||||||||||||||||
P3D06010E2 | 4.1600 | 8153 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-252-2 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06010E2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 28A | ||||||||||||||||
P3M06040K3 | 12.1700 | 2030 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06040K3 | EAR99 | 8541.29.0095 | 1 | N-Channel | 650 V | 68A | 15V | 50mOhm @ 40A, 15V | 2.4V @ 7.5mA (Typ) | +20V, -8V | - | 254W | |||||||||
P3M12160K3 | 8.8300 | 8824 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M12160K3 | EAR99 | 8541.29.0095 | 1 | N-Channel | 1200 V | 19A | 15V | 192mOhm @ 10A, 15V | 2.4V @ 2.5mA (Typ) | +21V, -8V | - | 110W | |||||||||
P3M06060K3 | 10.3800 | 9755 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06060K3 | 1 | N-Channel | 650 V | 48A | 15V | 79mOhm @ 20A, 15V | 2.2V @ 20mA (Typ) | +20V, -8V | - | 188W | |||||||||||
P3M171K0F3 | 6.1000 | 2987 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220F-2 | SiCFET (Silicon Carbide) | TO-220F-2L | download | ROHS3 Compliant | REACH Affected | 4237-P3M171K0F3 | 1 | N-Channel | 1700 V | 5.5A | 15V | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | +19V, -8V | - | 51W | |||||||||||
P3D06006I2 | 2.5000 | 8790 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220I-2 | SiC (Silicon Carbide) Schottky | TO-220I-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06006I2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 30 µA @ 650 V | -55°C ~ 175°C | 18A | ||||||||||||||||
P3M12160K4 | 8.8300 | 9289 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | REACH Affected | 4237-P3M12160K4 | 1 | N-Channel | 1200 V | 19A | 15V | 192mOhm @ 10A, 15V | 2.4V @ 2.5mA (Typ) | +21V, -8V | - | 110W | |||||||||||
P3D06004T2 | 2.1000 | 2096 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06004T2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 20 µA @ 650 V | -55°C ~ 175°C | 15A | ||||||||||||||||
P6D12002E2 | 2.6900 | 9835 | 0.00000000 | PN Junction Semiconductor | P6D | Tape & Reel (TR) | Active | TO-252-2 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | ROHS3 Compliant | REACH Affected | 4237-P6D12002E2TR | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 8A | ||||||||||||||||
P3M06060K4 | 10.3800 | 7995 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06060K4 | 1 | N-Channel | 650 V | 48A | 15V | 79mOhm @ 20A, 15V | 2.4V @ 5mA (Typ) | +20V, -8V | - | 188W | |||||||||||
P3M06300D8 | 4.9800 | 7160 | 0.00000000 | PN Junction Semiconductor | P3M | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | DFN8*8 | SiCFET (Silicon Carbide) | DFN8*8 | download | ROHS3 Compliant | REACH Affected | 4237-P3M06300D8TR | 1 | N-Channel | 650 V | 9A | 15V | 500mOhm @ 4.5A, 15V | 2.2V @ 5mA | +20V, -8V | - | 32W | |||||||||||
P3D12005E2 | 4.5000 | 1816 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-252-2 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12005E2TR | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 19A | ||||||||||||||||
P3M12025K3 | 28.7400 | 2069 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M12025K3 | 1 | N-Channel | 1200 V | 113A | 15V | 35mOhm @ 50A, 15V | 2.4V @ 17.7mA (Typ) | +21V, -10V | - | 524W | |||||||||||
P3D06006F2 | 2.5000 | 2548 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220F-2 | SiC (Silicon Carbide) Schottky | TO-220F-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06006F2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 30 µA @ 650 V | -55°C ~ 175°C | 15A | ||||||||||||||||
P3D06008I2 | 3.3300 | 4460 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220I-2 | SiC (Silicon Carbide) Schottky | TO-220I-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06008I2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 36 µA @ 650 V | -55°C ~ 175°C | 21A | ||||||||||||||||
P3M06300T3 | 4.9800 | 7695 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-2 | SiCFET (Silicon Carbide) | TO-220-2L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06300T3 | 1 | N-Channel | 650 V | 9A | 15V | 500mOhm @ 4.5A, 15V | 2.2V @ 5mA | +20V, -8V | - | 35W | |||||||||||
P3D06002E2 | 0.9100 | 5306 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-252-2 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06002E2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 10 µA @ 650 V | -55°C ~ 175°C | 9A | ||||||||||||||||
P3D06020K3 | 8.8400 | 2386 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06020K3 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 82A | ||||||||||||||||
P3D06008G2 | 3.3300 | 6822 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-263-2 | SiC (Silicon Carbide) Schottky | TO-263-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06008G2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 36 µA @ 650 V | -55°C ~ 175°C | 26A | ||||||||||||||||
P3D12010G2 | 6.5400 | 7423 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-263-2 | SiC (Silicon Carbide) Schottky | TO-263-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12010G2TR | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 33A | ||||||||||||||||
P3M171K0T3 | 6.1000 | 9441 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-2 | SiCFET (Silicon Carbide) | TO-220-2L | download | ROHS3 Compliant | REACH Affected | 4237-P3M171K0T3 | 1 | N-Channel | 1700 V | 6A | 15V | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | +19V, -8V | - | 100W |
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