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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
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P3D06006T2 | 2.5000 | ![]() |
2115 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06006T2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 30 µA @ 650 V | -55°C ~ 175°C | 23A | |||||||||||||||||||||
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P3D12020K2 | 12.4100 | ![]() |
5644 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12020K2 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 60 µA @ 650 V | -55°C ~ 175°C | 51A | |||||||||||||||||||||
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P3M12080K4 | 11.9000 | ![]() |
9034 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | REACH Affected | 4237-P3M12080K4 | 1 | N-Channel | 1200 V | 47A | 15V | 96mOhm @ 20A, 15V | 2.4V @ 5mA (Typ) | +21V, -8V | - | 221W | ||||||||||||||||
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P3D06004G2 | 2.1000 | ![]() |
6325 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-263-2 | SiC (Silicon Carbide) Schottky | TO-263-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06004G2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 20 µA @ 650 V | -55°C ~ 175°C | 14A | |||||||||||||||||||||
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P3M12017K4 | 39.7500 | ![]() |
7138 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | REACH Affected | 4237-P3M12017K4 | 1 | N-Channel | 1200 V | 151A | 15V | 24mOhm @ 75A, 15V | 2.5V @ 75mA (Typ) | +25V, -10V | - | 789W | ||||||||||||||||
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P3D06008E2 | 3.3300 | ![]() |
2523 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-252-2 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06008E2TR | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 36 µA @ 650 V | -55°C ~ 175°C | 22A | |||||||||||||||||||
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P3D06002T2 | 2.1000 | ![]() |
5217 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06002T2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 10 µA @ 650 V | -55°C ~ 175°C | 6A | |||||||||||||||||||||
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P3M12040K3 | 20.9800 | ![]() |
8887 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M12040K3 | EAR99 | 8541.29.0095 | 1 | N-Channel | 1200 V | 63A | 15V | 48mOhm @ 40A, 15V | 2.2V @ 40mA (Typ) | +21V, -8V | - | 349W | ||||||||||||||
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P3D06020I2 | 8.8400 | ![]() |
9682 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220I-2 | SiC (Silicon Carbide) Schottky | TO-220I-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06020I2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 35A | |||||||||||||||||||||
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P3M171K2K3 | 5.5900 | ![]() |
2230 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M171K2K3 | 1 | N-Channel | 1700 V | 6A | 15V | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | +19V, -8V | - | 68W | ||||||||||||||||
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PAA12400BM3 | 882.3600 | ![]() |
3564 | 0.00000000 | PN Junction Semiconductor | - | Tray | Active | -40°C ~ 175°C (TJ) | Chassis Mount | Module | PAA12400 | Silicon Carbide (SiC) | - | Module | download | ROHS3 Compliant | REACH Affected | 4237-PAA12400BM3 | 1 | 2 N-Channel (Half Bridge) | 1200V (1.2kV) | 350A | 7.3mOhm @ 300A, 20V | 5V @ 100mA | - | 29.5pF @ 1000V | - | |||||||||||||||
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P3M06120K3 | 9.0500 | ![]() |
6996 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06120K3 | 1 | N-Channel | 650 V | 27A | 15V | 158mOhm @ 10A, 15V | 2.2V @ 5mA | +20V, -8V | - | 131W | ||||||||||||||||
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P3M06120K4 | 9.0500 | ![]() |
2705 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06120K4 | 1 | N-Channel | 650 V | 27A | 15V | 158mOhm @ 10A, 15V | 2.2V @ 5mA | +20V, -8V | - | 131W | ||||||||||||||||
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P3M12080G7 | 11.9000 | ![]() |
1610 | 0.00000000 | PN Junction Semiconductor | P3M | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | D2PAK-7 | download | ROHS3 Compliant | REACH Affected | 4237-P3M12080G7TR | 1 | N-Channel | 1200 V | 32A | 15V | 96mOhm @ 20A, 15V | 2.2V @ 30mA (Typ) | +19V, -8V | - | 136W | ||||||||||||||||
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P1H06300D8 | 4.9800 | ![]() |
7689 | 0.00000000 | PN Junction Semiconductor | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | GaNFET (Gallium Nitride) | DFN8*8 | download | ROHS3 Compliant | REACH Affected | 4237-P1H06300D8TR | 1 | N-Channel | 650 V | 10A | 6V | - | +10V, -20V | - | 55.5W | ||||||||||||||||||
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P3D12020G2 | 12.4100 | ![]() |
4772 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-263-2 | SiC (Silicon Carbide) Schottky | TO-263-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12020G2TR | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 60 µA @ 650 V | -55°C ~ 175°C | 49A | |||||||||||||||||||||
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P3M07013K4 | 33.9000 | ![]() |
4850 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | REACH Affected | 4237-P3M07013K4 | 1 | N-Channel | 750 V | 140A | 15V | 16mOhm @ 75A, 15V | 2.2V @ 75mA (Typ) | +19V, -8V | - | 428W | ||||||||||||||||
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P3D12005K2 | 4.5000 | ![]() |
6239 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12005K2 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 23A | |||||||||||||||||||||
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P3M12040K4 | 20.9800 | ![]() |
2699 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | REACH Affected | 4237-P3M12040K4 | 1 | N-Channel | 1200 V | 63A | 15V | 48mOhm @ 40A, 15V | 2.2V @ 40mA (Typ) | +21V, -8V | - | 349W | ||||||||||||||||
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P3D12010K3 | 6.5400 | ![]() |
3747 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12010K3 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 46A | |||||||||||||||||||||
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P3D12020K3 | 12.4100 | ![]() |
1272 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12020K3 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 70A | |||||||||||||||||||||
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P3D06020T2 | 8.8400 | ![]() |
2609 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | - | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06020T2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 20 A | 0 ns | 100 µA @ 650 V | -55°C ~ 175°C | 45A | 904pF @ 0V, 1MHz | ||||||||||||||||||
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P3D06008F2 | 3.3300 | ![]() |
6959 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220F-2 | SiC (Silicon Carbide) Schottky | TO-220F-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06008F2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 36 µA @ 650 V | -55°C ~ 175°C | 18A | |||||||||||||||||||||
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P3D06010G2 | 4.1600 | ![]() |
5972 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-263-2 | SiC (Silicon Carbide) Schottky | TO-263-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06010G2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 30A | |||||||||||||||||||||
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P3D12030K2 | 14.9200 | ![]() |
2635 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D12030K2 | 1 | No Recovery Time > 500mA (Io) | 1200 V | 0 ns | 65 µA @ 650 V | -55°C ~ 175°C | 57A | |||||||||||||||||||||
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P3M173K0K3 | 5.0800 | ![]() |
6554 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M173K0K3 | 1 | N-Channel | 1700 V | 4A | 15V | 3.6Ohm @ 600mA, 15V | 2.2V @ 600µA (Typ) | +19V, -8V | - | 63W | ||||||||||||||||
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P3D06020F2 | 8.8400 | ![]() |
7762 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220F-2 | SiC (Silicon Carbide) Schottky | TO-220F-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06020F2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 29A | |||||||||||||||||||||
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P3D06016I2 | 7.7800 | ![]() |
2155 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220I-2 | SiC (Silicon Carbide) Schottky | TO-220I-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06016I2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 45 µA @ 650 V | -55°C ~ 175°C | 28A | |||||||||||||||||||||
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P3D06004E2 | 2.1000 | ![]() |
8434 | 0.00000000 | PN Junction Semiconductor | P3D | Tape & Reel (TR) | Active | TO-252-2 | SiC (Silicon Carbide) Schottky | TO-252-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06004E2TR | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 20 µA @ 650 V | -55°C ~ 175°C | 12A | |||||||||||||||||||||
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P3D06010F2 | 4.1600 | ![]() |
5570 | 0.00000000 | PN Junction Semiconductor | P3D | Tube | Active | TO-220F-2 | SiC (Silicon Carbide) Schottky | TO-220F-2 | download | ROHS3 Compliant | REACH Affected | 4237-P3D06010F2 | 1 | No Recovery Time > 500mA (Io) | 650 V | 0 ns | 44 µA @ 650 V | -55°C ~ 175°C | 21A |
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