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Transistors(102018)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | ECCN | HTSUS | Standard Package | FET Type | Current Rating (Amps) | Test Condition | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Reverse Recovery Time (trr) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Voltage - Test | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | Current - Collector Cutoff (Max) | Resistance - RDS(On) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BUK7275-100A,118 | - |  |
4049 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | BUK72 | - | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | |||||||||||||||||||||||||||||||||||||||||||||||
 |
IRFP4368PBF | - | |
6132 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247AC | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 75 V | 195A (Tc) | 10V | 1.85mOhm @ 195A, 10V | 4V @ 250µA | 570 nC @ 10 V | ±20V | 19230 pF @ 50 V | - | 520W (Tc) | ||||||||||||||||||||||||||||||||||
|
BUK753R1-40E,127 | - | |
5748 | 0.00000000 | Nexperia USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | BUK753 | MOSFET (Metal Oxide) | TO-220AB | download | 0000.00.0000 | 1 | N-Channel | 40 V | 100A (Tc) | 10V | 3.1mOhm @ 25A, 10V | 4V @ 1mA | 79 nC @ 10 V | ±20V | 6200 pF @ 25 V | - | 234W (Tc) | ||||||||||||||||||||||||||||||||||
|
MMRF1006HR5 | 543.1200 | |
35 | 0.00000000 | Freescale Semiconductor | - | Bulk | Active | 120 V | Chassis Mount | SOT-979A | 450MHz | LDMOS | NI-1230-4H | download | EAR99 | 8542.39.0001 | 1 | - | 150 mA | 1000W | 20dB | - | 50 V | ||||||||||||||||||||||||||||||||||||||
 |
BUK6607-55C,118 | 0.8500 | |
400 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | EAR99 | 8541.29.0095 | 400 | N-Channel | 55 V | 100A (Tc) | 10V | 6.5mOhm @ 25A, 10V | 2.8V @ 1mA | 82 nC @ 10 V | ±16V | 5160 pF @ 25 V | - | 158W (Tc) | ||||||||||||||||||||||||||||||||||
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AUIRLR3705ZTR | - | |
4648 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | EAR99 | 8541.29.0095 | 153 | N-Channel | 55 V | 42A (Tc) | 8mOhm @ 42A, 10V | 3V @ 250µA | 66 nC @ 5 V | 2900 pF @ 25 V | - | ||||||||||||||||||||||||||||||||||||||
|
BCM61B,215 | - | |
5875 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | BCM61 | - | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.21.0075 | 3,000 | |||||||||||||||||||||||||||||||||||||||||||||||
 |
5962-8777801XA | 35.2700 | |
201 | 0.00000000 | National Semiconductor | - | Bulk | Active | -55°C ~ 125°C | Through Hole | TO-205AD, TO-39-3 Metal Can | 5962-8777801 | TO-39-3 | download | EAR99 | 8541.29.0095 | 9 | 42 V | - | NPN - Darlington | - | - | - | |||||||||||||||||||||||||||||||||||||||
|
BUK9226-75A/C1,118 | 1.0000 | |
4294 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
IPD50R800CE | 1.0000 | |
5849 | 0.00000000 | Infineon Technologies | CoolMOS™ CE | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD50 | MOSFET (Metal Oxide) | PG-TO252-3-344 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 500 V | 7.6A (Tc) | 13V | 800mOhm @ 1.5A, 13V | 3.5V @ 130µA | 12.4 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 60W (Tc) | |||||||||||||||||||||||||||||||||
|
BUK762R6-60E,118 | - | |
6607 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | 0000.00.0000 | 1 | N-Channel | 60 V | 120A (Tc) | 10V | 2.6mOhm @ 25A, 10V | 4V @ 1mA | 140 nC @ 10 V | ±20V | 10170 pF @ 25 V | - | 324W (Tc) | |||||||||||||||||||||||||||||||||||
 |
BC55PAS,115 | - | |
7935 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | download | EAR99 | 8541.29.0075 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 |
FQAF16N50 | 2.7900 | |
8 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | MOSFET (Metal Oxide) | TO-3PF | download | EAR99 | 8542.39.0001 | 108 | N-Channel | 500 V | 11.3A (Tc) | 10V | 320mOhm @ 5.65A, 10V | 5V @ 250µA | 75 nC @ 10 V | ±30V | 3000 pF @ 25 V | - | 110W (Tc) | ||||||||||||||||||||||||||||||||||
 |
IRG4BC40W-LPBF | 2.0300 | |
15 | 0.00000000 | International Rectifier | - | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | Standard | 160 W | TO-262 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | 480V, 20A, 10Ohm, 15V | - | 600 V | 40 A | 160 A | 2.5V @ 15V, 20A | 110µJ (on), 230µJ (off) | 98 nC | 27ns/100ns | ||||||||||||||||||||||||||||||||
 |
BUK9Y40-55B/C3,115 | - | |
6309 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | - | 0000.00.0000 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
|
IRGR2B60KDTRRPBF | - | |
7153 | 0.00000000 | International Rectifier | - | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | Standard | 35 W | D-Pak | download | EAR99 | 8542.39.0001 | 1 | 400V, 2A, 100Ohm, 15V | 68 ns | NPT | 600 V | 6.3 A | 8 A | 2.25V @ 15V, 2A | 74µJ (on), 39µJ (off) | 12 nC | 11ns/150ns | ||||||||||||||||||||||||||||||||||
 |
FQI7N60TU | 1.1300 | |
1 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | FQI7N60 | MOSFET (Metal Oxide) | I2PAK (TO-262) | download | EAR99 | 8541.29.0095 | 267 | N-Channel | 600 V | 7.4A (Tc) | 10V | 1Ohm @ 3.7A, 10V | 5V @ 250µA | 38 nC @ 10 V | ±30V | 1430 pF @ 25 V | - | 3.13W (Ta), 142W (Tc) | |||||||||||||||||||||||||||||||||
|
IRL3803VPBF | 1.0000 | |
5678 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 30 V | 140A (Tc) | 4.5V, 10V | 5.5mOhm @ 71A, 10V | 1V @ 250µA | 76 nC @ 4.5 V | ±16V | 3720 pF @ 25 V | - | 200W (Tc) | ||||||||||||||||||||||||||||||||||
|
BUK9E04-40A,127 | - | |
7608 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | MOSFET (Metal Oxide) | I2PAK | download | EAR99 | 8541.29.0095 | 84 | N-Channel | 40 V | 75A (Tc) | 4.3V, 10V | 4mOhm @ 25A, 10V | 2V @ 1mA | 128 nC @ 5 V | ±15V | 8260 pF @ 25 V | - | 300W (Tc) | ||||||||||||||||||||||||||||||||||
|
FDN352AP | 1.0000 | |
6950 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | FDN352 | MOSFET (Metal Oxide) | SOT-23-3 | download | EAR99 | 8541.21.0095 | 1 | P-Channel | 30 V | 1.3A (Ta) | 4.5V, 10V | 180mOhm @ 1.3A, 10V | 2.5V @ 250µA | 1.9 nC @ 4.5 V | ±25V | 150 pF @ 15 V | - | 500mW (Ta) | |||||||||||||||||||||||||||||||||
 |
IPA80R1K4P7 | - | |
6451 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | PG-TO220-3-31 Full Pack | download | 0000.00.0000 | 1 | N-Channel | 800 V | 4A (Tc) | 10V | 1.4Ohm @ 1.4A, 10V | 3.5V @ 70µA | 10 nC @ 10 V | ±20V | 250 pF @ 500 V | - | 24W (Tc) | |||||||||||||||||||||||||||||||||||
 |
IRLR3636PBF | - | |
4351 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | D-Pak | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 60 V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49 nC @ 4.5 V | ±16V | 3779 pF @ 50 V | - | 143W (Tc) | ||||||||||||||||||||||||||||||||||
 |
FDP8860 | 1.2600 | |
20 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | download | EAR99 | 8541.29.0095 | 238 | N-Channel | 30 V | 80A (Tc) | 4.5V, 10V | 2.5mOhm @ 80A, 10V | 2.5V @ 250µA | 222 nC @ 10 V | ±20V | 12240 pF @ 15 V | - | 254W (Tc) | ||||||||||||||||||||||||||||||||||
 |
J112-D27Z | - | |
1960 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 625 mW | TO-92-3 | download | 0000.00.0000 | 1 | N-Channel | - | 35 V | 5 mA @ 15 V | 1 V @ 1 µA | 50 Ohms | ||||||||||||||||||||||||||||||||||||||||
 |
IRFP350 | 3.0400 | |
5008 | 0.00000000 | Harris Corporation | - | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247AC | download | EAR99 | 8542.39.0001 | 25 | N-Channel | 400 V | 16A (Tc) | 10V | 300mOhm @ 9.6A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 2600 pF @ 25 V | - | 190W (Tc) | ||||||||||||||||||||||||||||||||||
|
FGA30S120P | - | |
8010 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | FGA30S120 | Standard | 348 W | TO-3PN | download | EAR99 | 8542.39.0001 | 1 | - | Trench Field Stop | 1300 V | 60 A | 150 A | 2.3V @ 15V, 30A | - | 78 nC | - | ||||||||||||||||||||||||||||||||||
|
FJP5304DTU | 1.0000 | |
9133 | 0.00000000 | Fairchild Semiconductor | - | Bulk | Active | - | Through Hole | TO-220-3 | 70 W | TO-220-3 | download | EAR99 | 8542.39.0001 | 1 | 400 V | 4 A | 250mA | NPN | 1.5V @ 500mA, 2.5A | 8 @ 2A, 5V | - | ||||||||||||||||||||||||||||||||||||||
|
IPP65R190C7 | 1.0000 | |
1826 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 650 V | 13A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23 nC @ 10 V | ±20V | 1150 pF @ 400 V | - | 72W (Tc) | ||||||||||||||||||||||||||||||||||
 |
IRFH5250DTRPBF | 0.8300 | |
902 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 8-PQFN (5x6) | download | EAR99 | 8542.39.0001 | 362 | N-Channel | 25 V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2.35V @ 150µA | 83 nC @ 10 V | ±20V | 6115 pF @ 13 V | - | 3.6W (Ta), 156W (Tc) | ||||||||||||||||||||||||||||||||||
 |
PBSS5250X,115 | - | |
2155 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | PBSS5 | download | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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