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Transistors(102018)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Input | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Reverse Recovery Time (trr) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | NTC Thermistor | Input Capacitance (Cies) @ Vce |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
APT50GN60BDQ2G | 7.2700 |  |
8192 | 0.00000000 | Microchip Technology | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | APT50GN60 | Standard | 366 W | TO-247 [B] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | 400V, 50A, 4.3Ohm, 15V | Trench Field Stop | 600 V | 107 A | 150 A | 1.85V @ 15V, 50A | 1185µJ (on), 1565µJ (off) | 325 nC | 20ns/230ns | ||||||||||||||||||||
|
APT50GP60BG | 12.8400 | |
1042 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | APT50GP60 | Standard | 625 W | TO-247 [B] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | 400V, 50A, 5Ohm, 15V | PT | 600 V | 100 A | 190 A | 2.7V @ 15V, 50A | 465µJ (on), 637µJ (off) | 165 nC | 19ns/83ns | ||||||||||||||||||||
|
APT50GT60BRDQ2G | 11.2700 | |
172 | 0.00000000 | Microchip Technology | Thunderbolt IGBT® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | APT50GT60 | Standard | 446 W | TO-247 [B] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | 400V, 50A, 5Ohm, 15V | 22 ns | NPT | 600 V | 110 A | 150 A | 2.5V @ 15V, 50A | 995µJ (on), 1070µJ (off) | 240 nC | 14ns/240ns | |||||||||||||||||||
|
APT30GT60BRDQ2G | - | |
5717 | 0.00000000 | Microchip Technology | Thunderbolt IGBT® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | APT30GT60 | Standard | 250 W | TO-247 [B] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | 400V, 30A, 10Ohm, 15V | 22 ns | NPT | 600 V | 64 A | 110 A | 2.5V @ 15V, 30A | 80µJ (on), 605µJ (off) | 7.5 nC | 12ns/225ns | |||||||||||||||||||
 |
APT50M50JVFR | 70.9700 | |
2022 | 0.00000000 | Microchip Technology | POWER MOS V® | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | APT50M50 | MOSFET (Metal Oxide) | ISOTOP® | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 500 V | 77A (Tc) | 50mOhm @ 500mA, 10V | 4V @ 5mA | 1000 nC @ 10 V | 19600 pF @ 25 V | - | |||||||||||||||||||||||
 |
APT50M65JLL | 44.1500 | |
5375 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | APT50M65 | MOSFET (Metal Oxide) | ISOTOP® | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 500 V | 58A (Tc) | 10V | 65mOhm @ 29A, 10V | 5V @ 2.5mA | 141 nC @ 10 V | ±30V | 7010 pF @ 25 V | - | 520W (Tc) | |||||||||||||||||||
|
APT50M75JFLL | 44.8700 | |
2107 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | APT50M75 | MOSFET (Metal Oxide) | ISOTOP® | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 500 V | 51A (Tc) | 75mOhm @ 25.5A, 10V | 5V @ 2.5mA | 125 nC @ 10 V | 5590 pF @ 25 V | - | |||||||||||||||||||||||
 |
APT50M75LFLLG | 21.5000 | |
1424 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | Through Hole | TO-264-3, TO-264AA | APT50M75 | MOSFET (Metal Oxide) | TO-264 [L] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 500 V | 57A (Tc) | 75mOhm @ 28.5A, 10V | 5V @ 2.5mA | 125 nC @ 10 V | 5590 pF @ 25 V | - | |||||||||||||||||||||||
|
APT50M75LLLG | 21.0600 | |
7205 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | Through Hole | TO-264-3, TO-264AA | APT50M75 | MOSFET (Metal Oxide) | TO-264 [L] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 500 V | 57A (Tc) | 75mOhm @ 28.5A, 10V | 5V @ 2.5mA | 125 nC @ 10 V | 5590 pF @ 25 V | - | |||||||||||||||||||||||
|
APT5510JFLL | - | |
2720 | 0.00000000 | Microsemi Corporation | POWER MOS 7® | Tube | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 10 | N-Channel | 550 V | 44A (Tc) | 10V | 100mOhm @ 22A, 10V | 5V @ 2.5mA | 124 nC @ 10 V | ±30V | 5823 pF @ 25 V | - | 463W (Tc) | |||||||||||||||||||||
|
APT56M50L | 11.5900 | |
3190 | 0.00000000 | Microchip Technology | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | APT56M50 | MOSFET (Metal Oxide) | TO-264 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 500 V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 780W (Tc) | |||||||||||||||||||
 |
APT6010B2LLG | 27.1800 | |
5738 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | APT6010 | MOSFET (Metal Oxide) | T-MAX™ [B2] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 54A (Tc) | 10V | 100mOhm @ 27A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | ±30V | 6710 pF @ 25 V | - | 690W (Tc) | |||||||||||||||||||
|
APT6010JLL | 39.8500 | |
9820 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | APT6010 | MOSFET (Metal Oxide) | ISOTOP® | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 47A (Tc) | 100mOhm @ 23.5A, 10V | 5V @ 2.5mA | 150 nC @ 10 V | 6710 pF @ 25 V | - | |||||||||||||||||||||||
|
APT6013JFLL | 40.3900 | |
9012 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | APT6013 | MOSFET (Metal Oxide) | ISOTOP® | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 39A (Tc) | 130mOhm @ 19.5A, 10V | 5V @ 2.5mA | 130 nC @ 10 V | 5630 pF @ 25 V | - | |||||||||||||||||||||||
|
APT6015LVRG | 21.2400 | |
2124 | 0.00000000 | Microchip Technology | POWER MOS V® | Tube | Active | Through Hole | TO-264-3, TO-264AA | APT6015 | MOSFET (Metal Oxide) | TO-264 [L] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 38A (Tc) | 150mOhm @ 500mA, 10V | 4V @ 2.5mA | 475 nC @ 10 V | 9000 pF @ 25 V | - | |||||||||||||||||||||||
|
APT6017JFLL | 50.4100 | |
8146 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | Chassis Mount | SOT-227-4, miniBLOC | APT6017 | MOSFET (Metal Oxide) | ISOTOP® | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 31A (Tc) | 170mOhm @ 15.5A, 10V | 5V @ 2.5mA | 100 nC @ 10 V | 4500 pF @ 25 V | - | |||||||||||||||||||||||
|
APT6021BLLG | 17.6700 | |
9254 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | Through Hole | TO-247-3 | APT6021 | MOSFET (Metal Oxide) | TO-247 [B] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 29A (Tc) | 210mOhm @ 14.5A, 10V | 5V @ 1mA | 80 nC @ 10 V | 3470 pF @ 25 V | - | |||||||||||||||||||||||
|
APT6029BFLLG | 13.3100 | |
7677 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | APT6029 | MOSFET (Metal Oxide) | TO-247 [B] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | Q9302744 | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 21A (Tc) | 290mOhm @ 10.5A, 10V | 5V @ 1mA | 65 nC @ 10 V | 2615 pF @ 25 V | - | 300W (Tc) | ||||||||||||||||||||
|
APT6038BFLLG | 10.5300 | |
6337 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | Through Hole | TO-247-3 | APT6038 | MOSFET (Metal Oxide) | TO-247 [B] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 17A (Tc) | 380mOhm @ 8.5A, 10V | 5V @ 1mA | 43 nC @ 10 V | 1850 pF @ 25 V | - | |||||||||||||||||||||||
|
APT60GT60BRG | 14.6800 | |
2 | 0.00000000 | Microchip Technology | Thunderbolt IGBT® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | APT60GT60 | Standard | 500 W | TO-247 [B] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | - | NPT | 600 V | 100 A | 360 A | 2.5V @ 15V, 60A | 3.4mJ | 275 nC | 26ns/395ns | ||||||||||||||||||||
|
APT60M75L2FLLG | 50.6400 | |
3148 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | APT60M75 | MOSFET (Metal Oxide) | 264 MAX™ [L2] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 73A (Tc) | 10V | 75mOhm @ 36.5A, 10V | 5V @ 5mA | 195 nC @ 10 V | ±30V | 8930 pF @ 25 V | - | 893W (Tc) | |||||||||||||||||||
|
APT60M75L2LLG | 50.6400 | |
1545 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | APT60M75 | MOSFET (Metal Oxide) | 264 MAX™ [L2] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 73A (Tc) | 10V | 75mOhm @ 36.5A, 10V | 5V @ 5mA | 195 nC @ 10 V | ±30V | 8930 pF @ 25 V | - | 893W (Tc) | |||||||||||||||||||
 |
APT65GP60J | 36.0500 | |
3440 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | APT65GP60 | 431 W | Standard | ISOTOP® | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | Single | PT | 600 V | 130 A | 2.7V @ 15V, 65A | 1 mA | No | 7.4 nF @ 25 V | |||||||||||||||||||||
|
APT65GP60L2DQ2G | 20.7000 | |
2283 | 0.00000000 | Microchip Technology | POWER MOS 7® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | APT65GP60 | Standard | 833 W | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | 400V, 65A, 5Ohm, 15V | PT | 600 V | 198 A | 250 A | 2.7V @ 15V, 65A | 605µJ (on), 895µJ (off) | 210 nC | 30ns/90ns | |||||||||||||||||||||
|
APT66M60L | 19.2000 | |
3273 | 0.00000000 | Microchip Technology | POWER MOS 8™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | APT66M60 | MOSFET (Metal Oxide) | TO-264 [L] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 70A (Tc) | 10V | 190mOhm @ 33A, 10V | 5V @ 2.5mA | 330 nC @ 10 V | ±30V | 13190 pF @ 25 V | - | 1135W (Tc) | |||||||||||||||||||
 |
SCT3040KW7TL | 38.8000 | |
8346 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SCT3040 | SiCFET (Silicon Carbide) | TO-263-7 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 1200 V | 56A (Tc) | 52mOhm @ 20A, 18V | 5.6V @ 10mA | 107 nC @ 18 V | +22V, -4V | 1337 pF @ 800 V | - | 267W | ||||||||||||||||||||
 |
G3R350MT12D | 4.7400 | |
3 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | G3R350 | SiCFET (Silicon Carbide) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R350MT12D | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 11A (Tc) | 15V | 420mOhm @ 4A, 15V | 2.69V @ 2mA | 12 nC @ 15 V | ±15V | 334 pF @ 800 V | - | 74W (Tc) | |||||||||||||||||||
 |
G3R20MT17K | 107.2000 | |
4 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | G3R20 | SiCFET (Silicon Carbide) | TO-247-4 | - | RoHS Compliant | 1 (Unlimited) | 1242-G3R20MT17K | EAR99 | 8541.29.0095 | 30 | N-Channel | 1700 V | 124A (Tc) | 15V | 26mOhm @ 75A, 15V | 2.7V @ 15mA | 400 nC @ 15 V | ±15V | 10187 pF @ 1000 V | - | 809W (Tc) | |||||||||||||||||||
|
G3R75MT12D | 10.5000 | |
3 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | G3R75 | SiCFET (Silicon Carbide) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R75MT12D | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 41A (Tc) | 15V | 90mOhm @ 20A, 15V | 2.69V @ 7.5mA | 54 nC @ 15 V | ±15V | 1560 pF @ 800 V | - | 207W (Tc) | |||||||||||||||||||
 |
G2R1000MT33J | 18.6900 | |
1 | 0.00000000 | GeneSiC Semiconductor | G2R™ | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | G2R1000 | SiCFET (Silicon Carbide) | TO-263-7 | download | RoHS Compliant | 1 (Unlimited) | 1242-G2R1000MT33J | EAR99 | 8541.29.0095 | 50 | N-Channel | 3300 V | 4A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 3.5V @ 2mA | 21 nC @ 20 V | +20V, -5V | 238 pF @ 1000 V | - | 74W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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