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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Voltage - Test | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TPCA8109(TE12L1,V | - |  |
3844 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerVDFN | TPCA8109 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | - | 1 (Unlimited) | 264-TPCA8109(TE12L1VTR | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 30 V | 24A (Ta) | 4.5V, 10V | 9mOhm @ 12A, 10V | 2V @ 500µA | 56 nC @ 10 V | +20V, -25V | 2400 pF @ 10 V | - | 1.6W (Ta), 30W (Tc) | |||||||||||||||||||||
|
TPH1110FNH,L1Q | 1.8400 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH1110 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 250 V | 10A (Ta) | 10V | 112mOhm @ 5A, 10V | 4V @ 300µA | 11 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 1.6W (Ta), 57W (Tc) | |||||||||||||||||||||
 |
TK11P65W,RQ | 1.7300 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK11P65 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 11.1A (Ta) | 10V | 440mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | |||||||||||||||||||||
 |
TPH9R00CQ5,LQ | 2.5500 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | - | ROHS3 Compliant | 1 (Unlimited) | 5,000 | N-Channel | 150 V | 108A (Ta), 64A (Tc) | 8V, 10V | 9mOhm @ 32A, 10V | 4.5V @ 1mA | 44 nC @ 10 V | ±20V | 5400 pF @ 75 V | - | 3W (Ta), 210W (Tc) | ||||||||||||||||||||||||
 |
2SA1020-O(TE6,F,M) | - | |
3483 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||
 |
TK34A10N1,S4X | 1.5500 | |
9909 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK34A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 34A (Tc) | 10V | 9.5mOhm @ 17A, 10V | 4V @ 500µA | 38 nC @ 10 V | ±20V | 2600 pF @ 50 V | - | 35W (Tc) | |||||||||||||||||||||
 |
3SK291(TE85L,F) | - | |
4341 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 12.5 V | Surface Mount | SC-61AA | 3SK291 | 800MHz | MOSFET | SMQ | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel Dual Gate | 30mA | 10 mA | - | 22.5dB | 2.5dB | 6 V | ||||||||||||||||||||||||
 |
SSM3J372R,LF | 0.4400 | |
334 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | SSM3J372 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 6A (Ta) | 1.8V, 10V | 42mOhm @ 5A, 10V | 1.2V @ 1mA | 8.2 nC @ 4.5 V | +12V, -6V | 560 pF @ 15 V | - | 1W (Ta) | |||||||||||||||||||||
 |
SSM6K217FE,LF | 0.3700 | |
37 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6K217 | MOSFET (Metal Oxide) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | N-Channel | 40 V | 1.8A (Ta) | 1.8V, 8V | 195mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1 nC @ 4.2 V | ±12V | 130 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||
 |
SSM6N67NU,LF | 0.5000 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-WDFN Exposed Pad | SSM6N67 | MOSFET (Metal Oxide) | 2W (Ta) | 6-µDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 4A (Ta) | 39.1mOhm @ 2A, 4.5V | 1V @ 1mA | 3.2nC @ 4.5V | 310pF @ 15V | Logic Level Gate, 1.8V Drive | |||||||||||||||||||||||
 |
SSM3K316T(TE85L,F) | - | |
3620 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3K316 | MOSFET (Metal Oxide) | TSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 4A (Ta) | 1.8V, 10V | 53mOhm @ 3A, 10V | 1V @ 1mA | 4.3 nC @ 4 V | ±12V | 270 pF @ 10 V | - | 700mW (Ta) | ||||||||||||||||||||||
|
TK5A65W,S5X | 1.6000 | |
1655 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK5A65 | MOSFET (Metal Oxide) | TO-220SIS | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 5.2A (Ta) | 10V | 1.2Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 30W (Tc) | |||||||||||||||||||||
|
SSM3J331R,LF | 0.4500 | |
23 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3J331 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 4A (Ta) | 1.5V, 4.5V | 55mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4 nC @ 4.5 V | ±8V | 630 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||
 |
TK210V65Z,LQ | 3.2100 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | TK210V65 | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 15A (Ta) | 10V | 210mOhm @ 7.5A, 10V | 4V @ 610µA | 25 nC @ 10 V | ±30V | 1370 pF @ 300 V | - | 130W (Tc) | |||||||||||||||||||||
|
TK8A60W5,S5VX | 1.7500 | |
6899 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 8A (Ta) | 10V | 540mOhm @ 4A, 10V | 4.5V @ 400µA | 22 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W (Tc) | |||||||||||||||||||||
 |
SSM6K518NU,LF | 0.4100 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-WDFN Exposed Pad | SSM6K518 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 33mOhm @ 4A, 4.5V | 1V @ 1mA | 3.6 nC @ 4.5 V | ±8V | 410 pF @ 10 V | - | 1.25W (Ta) | |||||||||||||||||||||
 |
RN2702,LF | 0.3000 | |
7882 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | RN2702 | 200mW | USV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200MHz | 10kOhms | 10kOhms | ||||||||||||||||||||||||
 |
2SC4793,NSEIKIF(J | - | |
8903 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SC4793 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | NPN | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 100MHz | ||||||||||||||||||||||||||
 |
SSM6L39TU,LF | 0.4600 | |
20 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SSM6L39 | MOSFET (Metal Oxide) | 500mW | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N and P-Channel | 20V | 800mA | 143mOhm @ 600MA, 4V | 1V @ 1mA | - | 268pF @ 10V | Logic Level Gate, 1.8V Drive | |||||||||||||||||||||||
|
RN1703,LF | 0.3100 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | RN1703 | 200mW | USV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz | 22kOhms | 22kOhms | ||||||||||||||||||||||||
 |
2SC3074-O(Q) | - | |
3255 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SC3074 | 1 W | PW-MOLD | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 200 | 50 V | 5 A | 1µA (ICBO) | NPN | 400mV @ 150mA, 3A | 70 @ 1A, 1V | 120MHz | ||||||||||||||||||||||||||
 |
RN2309,LF | 0.1800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2309 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200 MHz | 47 kOhms | 22 kOhms | |||||||||||||||||||||||||
 |
TK4A60D(STA4,Q,M) | - | |
6275 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK4A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 35W (Tc) | |||||||||||||||||||||
 |
XPN3R804NC,L1XHQ | 1.4700 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | XPN3R804 | MOSFET (Metal Oxide) | 8-TSON Advance-WF (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 40A (Ta) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 2.5V @ 300µA | 35 nC @ 10 V | ±20V | 2230 pF @ 10 V | - | 840mW (Ta), 100W (Tc) | ||||||||||||||||||||||
|
RN4904FE,LF(CT | 0.2600 | |
1676 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4904 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 47kOhms | 47kOhms | ||||||||||||||||||||||||
 |
RN2422TE85LF | 0.4200 | |
4270 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2422 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 800 mA | 500nA | PNP - Pre-Biased | 250mV @ 1mA, 50mA | 65 @ 100mA, 1V | 200 MHz | 2.2 kOhms | 2.2 kOhms | ||||||||||||||||||||||||
 |
TPCF8304(TE85L,F,M | - | |
5747 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TPCF8304 | MOSFET (Metal Oxide) | 330mW | VS-8 (2.9x1.5) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 P-Channel (Dual) | 30V | 3.2A | 72mOhm @ 1.6A, 10V | 1.2V @ 1mA | 14nC @ 10V | 600pF @ 10V | Logic Level Gate | ||||||||||||||||||||||||
|
2SC2235-O,F(J | - | |
8839 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2235 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | ||||||||||||||||||||||||||
 |
TK72E08N1,S1X | 2.4400 | |
45 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK72E08 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 72A (Ta) | 10V | 4.3mOhm @ 36A, 10V | 4V @ 1mA | 81 nC @ 10 V | ±20V | 5500 pF @ 40 V | - | 192W (Tc) | |||||||||||||||||||||
|
RN1908FE(TE85L,F) | 0.0639 | |
7284 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN1908 | 100mW | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 22kOhms | 47kOhms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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