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Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
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GT30N135SRA,S1E | 3.7700 | ![]() |
3270 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-247-3 | Standard | 348 W | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | 300V, 60A, 39Ohm, 15V | - | 1350 V | 60 A | 120 A | 2.6V @ 15V, 60A | -, 1.3mJ (off) | 270 nC | - | |||||||||||||||||||||||
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TW107N65C,S1F | 9.6200 | ![]() |
96 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 20A (Tc) | 18V | 145mOhm @ 10A, 18V | 5V @ 1.2mA | 21 nC @ 18 V | +25V, -10V | 600 pF @ 400 V | - | 76W (Tc) | ||||||||||||||||||||||
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TPW2R508NH,L1Q | 2.8100 | ![]() |
1661 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 75 V | 150A (Ta) | 10V | 2.5mOhm @ 50A, 10V | 4V @ 1mA | 72 nC @ 10 V | ±20V | 6000 pF @ 37.5 V | - | 800mW (Ta), 142W (Tc) | |||||||||||||||||||||||
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TK25A20D,S5X | 1.7900 | ![]() |
40 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 200 V | 25A (Ta) | 10V | 70mOhm @ 12.5A, 10V | 3.5V @ 1mA | 60 nC @ 10 V | ±20V | 2550 pF @ 100 V | - | 45W (Tc) | ||||||||||||||||||||||
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TK22V65X5,LQ | 5.6600 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 22A (Ta) | 10V | 170mOhm @ 11A, 10V | 4.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | ||||||||||||||||||||||
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TK14V65W,LQ | 3.4800 | ![]() |
2719 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 13.7A (Ta) | 10V | 280mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 139W (Tc) | ||||||||||||||||||||||
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GT50JR21(STA1,E,S) | 4.7900 | ![]() |
6501 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 230 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT50JR21(STA1ES) | EAR99 | 8541.29.0095 | 25 | - | - | 600 V | 50 A | 100 A | 2V @ 15V, 50A | - | - | |||||||||||||||||||||||
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SSM3J15CT,L3F | 0.3100 | ![]() |
9 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-101, SOT-883 | MOSFET (Metal Oxide) | CST3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | P-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | ±20V | 9.1 pF @ 3 V | - | 100mW (Ta) | |||||||||||||||||||||||
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TK5P65W,RQ | 1.3700 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 5.2A (Ta) | 10V | 1.22Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 60W (Tc) | ||||||||||||||||||||||
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TK099V65Z,LQ | 5.5600 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | TK099V65 | MOSFET (Metal Oxide) | 5-DFN (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 30A (Ta) | 10V | 99mOhm @ 15A, 10V | 4V @ 1.27mA | 47 nC @ 10 V | ±30V | 2780 pF @ 300 V | - | 230W (Tc) | |||||||||||||||||||||
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TJ20S04M3L,LXHQ | 0.9400 | ![]() |
34 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ20S04 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 20A (Ta) | 6V, 10V | 22.2mOhm @ 10A, 10V | 3V @ 1mA | 37 nC @ 10 V | +10V, -20V | 1850 pF @ 10 V | - | 41W (Tc) | ||||||||||||||||||||||
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TK40S06N1L,LXHQ | 1.0700 | ![]() |
20 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK40S06 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 40A (Ta) | 4.5V, 10V | 18mOhm @ 20A, 10V | 2.5V @ 200µA | 26 nC @ 10 V | ±20V | 1650 pF @ 10 V | - | 88.2W (Tc) | ||||||||||||||||||||||
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XPN7R104NC,L1XHQ | 1.2500 | ![]() |
9396 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | XPN7R104 | MOSFET (Metal Oxide) | 8-TSON Advance-WF (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 20A (Ta) | 4.5V, 10V | 7.1mOhm @ 10A, 10V | 2.5V @ 200µA | 21 nC @ 10 V | ±20V | 1290 pF @ 10 V | - | 840mW (Ta), 65W (Tc) | ||||||||||||||||||||||
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TK110A65Z,S4X | 4.2300 | ![]() |
51 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK110A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 45W (Tc) | |||||||||||||||||||||
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RN2418,LF | 0.1800 | ![]() |
7742 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2418 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 47 kOhms | 10 kOhms | ||||||||||||||||||||||||
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2SA2154MFVGR,L3F | 0.1900 | ![]() |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-723 | 2SA2154 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 150 mA | 100nA (ICBO) | PNP | 300mV @ 10mA, 100mA | 200 @ 2mA, 6V | 80MHz | |||||||||||||||||||||||||
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2SC6100,LF | 0.5300 | ![]() |
42 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 2SC6100 | 500 mW | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 2.5 A | 100nA (ICBO) | NPN | 140mV @ 20mA, 1A | 400 @ 300mA, 2V | - | |||||||||||||||||||||||||
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TPCC8105,L1Q(CM | - | ![]() |
1963 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-VDFN Exposed Pad | TPCC8105 | MOSFET (Metal Oxide) | 8-TSON Advance (3.3x3.3) | - | 1 (Unlimited) | 264-TPCC8105L1Q(CMTR | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 30 V | 23A (Ta) | 4.5V, 10V | 7.8mOhm @ 11.5A, 10V | 2V @ 500µA | 76 nC @ 10 V | +20V, -25V | 3240 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | |||||||||||||||||||||
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TJ60S06M3L,LXHQ | 1.6500 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ60S06 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 60A (Ta) | 6V, 10V | 11.2mOhm @ 30A, 10V | 3V @ 1mA | 156 nC @ 10 V | +10V, -20V | 7760 pF @ 10 V | - | 100W (Tc) | ||||||||||||||||||||||
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SSM6J808R,LF | 0.6400 | ![]() |
5 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J808 | MOSFET (Metal Oxide) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 40 V | 7A (Ta) | 4V, 10V | 35mOhm @ 2.5A, 10V | 2V @ 100µA | 24.2 nC @ 10 V | +10V, -20V | 1020 pF @ 10 V | - | 1.5W (Ta) | |||||||||||||||||||||
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SSM6P816R,LF | 0.4900 | ![]() |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6P816 | MOSFET (Metal Oxide) | 1.4W (Ta) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 P-Channel (Dual) | 20V | 6A (Ta) | 30.1mOhm @ 4A, 4.5V | 1V @ 1mA | 16.6nC @ 4.5V | 1030pF @ 10V | Logic Level Gate, 1.8V Drive | |||||||||||||||||||||||
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SSM3J325F,LF | 0.4100 | ![]() |
17 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3J325 | MOSFET (Metal Oxide) | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 2A (Ta) | 1.5V, 4.5V | 150mOhm @ 1A, 4.5V | - | 4.6 nC @ 4.5 V | ±8V | 270 pF @ 10 V | - | 600mW (Ta) | |||||||||||||||||||||
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TK16J60W5,S1VQ | 5.2000 | ![]() |
32 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-3P-3, SC-65-3 | TK16J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 15.8A (Ta) | 10V | 230mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | |||||||||||||||||||||
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SSM3J306T(TE85L,F) | - | ![]() |
5083 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3J306 | MOSFET (Metal Oxide) | TSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 2.4A (Ta) | 4V, 10V | 117mOhm @ 1A, 10V | - | 2.5 nC @ 15 V | ±20V | 280 pF @ 15 V | - | 700mW (Ta) | ||||||||||||||||||||||
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SSM3J375F,LXHF | 0.4900 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 2A (Ta) | 1.5V, 4.5V | 150mOhm @ 1A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | +6V, -8V | 270 pF @ 10 V | - | 600mW (Ta) | ||||||||||||||||||||||
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TW015Z65C,S1F | 48.8100 | ![]() |
120 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4L(X) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 100A (Tc) | 18V | 22mOhm @ 50A, 18V | 5V @ 11.7mA | 128 nC @ 18 V | +25V, -10V | 4850 pF @ 400 V | - | 342W (Tc) | ||||||||||||||||||||||
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TK210V65Z,LQ | 3.2100 | ![]() |
4 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | TK210V65 | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 15A (Ta) | 10V | 210mOhm @ 7.5A, 10V | 4V @ 610µA | 25 nC @ 10 V | ±30V | 1370 pF @ 300 V | - | 130W (Tc) | |||||||||||||||||||||
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2SC6000(TE16L1,NQ) | - | ![]() |
4731 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SC6000 | 20 W | PW-MOLD | - | 264-2SC6000(TE16L1NQ)TR | EAR99 | 8541.29.0095 | 2,000 | 50 V | 7 A | 100nA (ICBO) | NPN | 180mV @ 83mA, 2.5A | 250 @ 2.5A, 2V | - | ||||||||||||||||||||||||||
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RN1108,LXHF(CT | 0.3300 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1108 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 22 kOhms | 47 kOhms | |||||||||||||||||||||||||
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2SC5459(TOJS,Q,M) | - | ![]() |
5031 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SC5459 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 400 V | 3 A | 100µA (ICBO) | NPN | 1V @ 150mA, 1.2A | 20 @ 300mA, 5V | - |
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