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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK190A65Z,S4X | 3.0000 |  |
12 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK190A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 15A (Ta) | 10V | 190mOhm @ 7.5A, 10V | 4V @ 610µA | 25 nC @ 10 V | ±30V | 1370 pF @ 300 V | - | 40W (Tc) | ||||||||||||
 |
TPCA8128,LQ(CM | - | |
6650 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8128 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 34A (Ta) | 4.5V, 10V | 4.8mOhm @ 17A, 10V | 2V @ 500µA | 115 nC @ 10 V | +20V, -25V | 4800 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | ||||||||||||
 |
TK065Z65Z,S1F | 7.8900 | |
4529 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-247-4 | MOSFET (Metal Oxide) | TO-247-4L(T) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 650 V | 38A (Ta) | 10V | 65mOhm @ 19A, 10V | 4V @ 1.69mA | 62 nC @ 10 V | ±30V | 3650 pF @ 300 V | - | 270W (Tc) | |||||||||||||
 |
SSM3K17FU,LF | 0.3300 | |
62 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SSM3K17 | MOSFET (Metal Oxide) | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 50 V | 100mA (Ta) | 2.5V, 4V | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | ±7V | 7 pF @ 3 V | - | 150mW (Ta) | |||||||||||||
 |
2SC2383-O,T6ALPF(M | - | |
6758 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2383 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 160 V | 1 A | 1µA (ICBO) | NPN | 1.5V @ 50mA, 500mA | 60 @ 200mA, 5V | 100MHz | |||||||||||||||||
 |
RN2903FE(TE85L,F) | 0.3400 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2903 | 100mW | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz | 22kOhms | 22kOhms | |||||||||||||||
 |
SSM6K513NU,LF | 0.4600 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 150°C (TA) | Surface Mount | 6-WDFN Exposed Pad | SSM6K513 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 15A (Ta) | 4.5V, 10V | 8.9mOhm @ 4A, 10V | 2.1V @ 100µA | 7.5 nC @ 4.5 V | ±20V | 1130 pF @ 15 V | - | 1.25W (Ta) | ||||||||||||
 |
TJ8S06M3L,LXHQ | 0.9500 | |
8204 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ8S06 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 8A (Ta) | 6V, 10V | 104mOhm @ 4A, 10V | 3V @ 1mA | 19 nC @ 10 V | +10V, -20V | 890 pF @ 10 V | - | 27W (Tc) | |||||||||||||
|
XPN9R614MC,L1XHQ | 1.4000 | |
13 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | XPN9R614 | MOSFET (Metal Oxide) | 8-TSON Advance-WF (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 40 V | 40A (Ta) | 4.5V, 10V | 9.6mOhm @ 20A, 10V | 2.1V @ 500µA | 64 nC @ 10 V | +10V, -20V | 3000 pF @ 10 V | - | 840mW (Ta), 100W (Tc) | |||||||||||||
 |
TK2R4E08QM,S1X | 3.1800 | |
196 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tube | Active | 175°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 120A (Tc) | 6V, 10V | 2.44mOhm @ 50A, 10V | 3.5V @ 2.2mA | 178 nC @ 10 V | ±20V | 13000 pF @ 40 V | - | 300W (Tc) | |||||||||||||
|
TK65S04K3L(T6L1,NQ | - | |
5095 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK65S04 | MOSFET (Metal Oxide) | DPAK+ | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 65A (Ta) | 6V, 10V | 4.5mOhm @ 32.5A, 10V | 3V @ 1mA | 63 nC @ 10 V | ±20V | 2800 pF @ 10 V | - | 88W (Tc) | ||||||||||||
 |
2SA1931(NOMARK,A,Q | - | |
9650 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1931 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 50 V | 5 A | 1µA (ICBO) | PNP | 400mV @ 200mA, 2A | 100 @ 1A, 1V | 60MHz | |||||||||||||||||
|
TK16A60W5,S4VX | 2.9700 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK16A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 1.5mA | 43 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 40W (Tc) | ||||||||||||
|
2SC2235-Y,T6KEHF(M | - | |
6525 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2235 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | |||||||||||||||||
|
TK3R9E10PL,S1X | 2.3700 | |
100 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-220-3 | TK3R9E10 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 100A (Tc) | 4.5V, 10V | 3.9mOhm @ 50A, 10V | 2.5V @ 1mA | 96 nC @ 10 V | ±20V | 6320 pF @ 50 V | - | 230W (Tc) | ||||||||||||
 |
2SK4016(Q) | - | |
1323 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SK4016 | MOSFET (Metal Oxide) | TO-220SIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 13A (Ta) | 10V | 500mOhm @ 6.5A, 10V | 4V @ 1mA | 62 nC @ 10 V | ±30V | 3100 pF @ 25 V | - | 50W (Tc) | |||||||||||||
 |
TK20N60W5,S1VF | 3.9200 | |
4257 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK20N60 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 20A (Ta) | 10V | 175mOhm @ 10A, 10V | 4.5V @ 1mA | 55 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 165W (Tc) | ||||||||||||
 |
TK14C65W,S1Q | - | |
2199 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TK14C65 | MOSFET (Metal Oxide) | I2PAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 130W (Tc) | ||||||||||||
 |
2SA1954BTE85LF | - | |
7205 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SA1954 | 100 mW | SC-70 | - | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 12 V | 500 mA | 100nA (ICBO) | PNP | 250mV @ 10mA, 200mA | 500 @ 10mA, 2V | 130MHz | |||||||||||||||||
 |
TK55S10N1,LXHQ | 1.6800 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK55S10 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 55A (Ta) | 10V | 6.5mOhm @ 27.5A, 10V | 4V @ 500µA | 49 nC @ 10 V | ±20V | 3280 pF @ 10 V | - | 157W (Tc) | |||||||||||||
 |
2SA1955FVBTPL3Z | 0.1200 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-723 | 2SA1955 | 100 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 12 V | 400 mA | 100nA (ICBO) | PNP | 250mV @ 10mA, 200mA | 300 @ 10mA, 2V | 130MHz | |||||||||||||||||
 |
SSM3J328R,LF | 0.4100 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3J328 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 29.8mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | ±8V | 840 pF @ 10 V | - | 1W (Ta) | ||||||||||||
 |
TPCC8093,L1Q | - | |
7998 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Obsolete | 150°C | Surface Mount | 8-PowerVDFN | TPCC8093 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | TPCC8093L1Q | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 20 V | 21A (Ta) | 2.5V, 4.5V | 5.8mOhm @ 10.5A, 4.5V | 1.2V @ 500µA | 16 nC @ 5 V | ±12V | 1860 pF @ 10 V | - | 1.9W (Ta), 30W (Tc) | ||||||||||||
 |
TK1R5R04PB,LXGQ | 2.6900 | |
2158 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK1R5R04 | MOSFET (Metal Oxide) | D2PAK+ | download | 3 (168 Hours) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 40 V | 160A (Ta) | 6V, 10V | 1.5mOhm @ 80A, 10V | 3V @ 500µA | 103 nC @ 10 V | ±20V | 5500 pF @ 10 V | - | 205W (Tc) | |||||||||||||
|
2SK2962(T6CANO,A,F | - | |
8525 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK2962 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 1A (Tj) | |||||||||||||||||||||||||
|
TK5A53D(STA4,Q,M) | 1.3700 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK5A53 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 525 V | 5A (Ta) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 35W (Tc) | ||||||||||||
|
RN1967FE(TE85L,F) | - | |
7266 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOT-563, SOT-666 | RN1967 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 10kOhms | 47kOhms | ||||||||||||||||
 |
RN2606(TE85L,F) | 0.4800 | |
910 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN2606 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 4.7kOhms | 47kOhms | |||||||||||||||
 |
RN2711JE(TE85L,F) | 0.4700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN2711 | 100mW | ESV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz | 10kOhms | - | |||||||||||||||
|
RN1101MFV,L3XHF(CT | 0.3400 | |
16 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1101 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 30 @ 10mA, 5V | 4.7 kOhms | 4.7 kOhms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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