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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | ECCN | HTSUS | Standard Package | FET Type | Test Condition | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Reverse Recovery Time (trr) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ULN2004APG,C,N | - |  |
9779 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | -40°C ~ 85°C (TA) | Through Hole | 16-DIP (0.300", 7.62mm) | ULN2004 | 1.47W | 16-DIP | - | 1 (Unlimited) | EAR99 | 8541.29.0075 | 25 | 50V | 500mA | 50µA | 7 NPN Darlington | 1.6V @ 500µA, 350mA | 1000 @ 350mA, 2V | - | ||||||||||||||||||||||||||
 |
2SA1162S-Y, LF(D | - | |
5535 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA1162 | 150 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | PNP | 300mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||||
 |
TK31N60W5,S1VF | 7.0800 | |
3930 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK31N60 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 30.8A (Ta) | 10V | 99mOhm @ 15.4A, 10V | 4.5V @ 1.5mA | 105 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | |||||||||||||||||||||
 |
2SC5232BTE85LF | 0.1300 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SC5232 | 150 mW | SC-59 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 12 V | 500 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 200mA | 500 @ 10mA, 2V | 130MHz | ||||||||||||||||||||||||||
 |
RN1606(TE85L,F) | 0.4200 | |
390 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN1606 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 4.7kOhms | 47kOhms | ||||||||||||||||||||||||
 |
RN2106CT(TPL3) | - | |
9972 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN2106 | 50 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 20 V | 50 mA | 500nA | PNP - Pre-Biased | 150mV @ 250µA, 5mA | 120 @ 10mA, 5V | 4.7 kOhms | 47 kOhms | ||||||||||||||||||||||||||
 |
SSM6J214FE(TE85L,F | 0.3900 | |
30 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-563, SOT-666 | SSM6J214 | MOSFET (Metal Oxide) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | P-Channel | 30 V | 3.6A (Ta) | 1.8V, 10V | 50mOhm @ 3A, 10V | 1.2V @ 1mA | 7.9 nC @ 4.5 V | ±12V | 560 pF @ 15 V | - | 500mW (Ta) | |||||||||||||||||||||
 |
2SC2235-Y(T6ND,AF | - | |
7383 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2235 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | ||||||||||||||||||||||||||
 |
2SK3127(TE24L,Q) | - | |
2581 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SK3127 | MOSFET (Metal Oxide) | TO-220SM | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 45A (Ta) | 10V | 12mOhm @ 25A, 10V | 3V @ 1mA | 66 nC @ 10 V | ±20V | 2300 pF @ 10 V | - | 65W (Tc) | ||||||||||||||||||||||
 |
MT3S113TU,LF | 0.6400 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 3-SMD, Flat Lead | MT3S113 | 900mW | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 12.5dB | 5.3V | 100mA | NPN | 200 @ 30mA, 5V | 11.2GHz | 1.45dB @ 1GHz | |||||||||||||||||||||||||
 |
SSM6K819R,LXHF | 1.0200 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 175°C | Surface Mount | 6-SMD, Flat Leads | SSM6K819 | MOSFET (Metal Oxide) | 6-TSOP-F | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 100 V | 10A (Ta) | 4.5V, 10V | 25.8mOhm @ 4A, 10V | 2.5V @ 100µA | 8.5 nC @ 4.5 V | ±20V | 1110 pF @ 15 V | - | 1.5W (Ta) | ||||||||||||||||||||||
|
2SA1162-GR,LF | 0.1800 | |
62 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA1162 | 150 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | PNP | 300mV @ 10mA, 100mA | 200 @ 2mA, 6V | 80MHz | |||||||||||||||||||||||||
 |
SSM3J114TU(TE85L) | 0.4400 | |
193 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | SSM3J114 | MOSFET (Metal Oxide) | UFM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 1.8A (Ta) | 1.5V, 4V | 149mOhm @ 600mA, 4V | 1V @ 1mA | 7.7 nC @ 4 V | ±8V | 331 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||||||||
 |
TK7A65W,S5X | 1.6700 | |
2976 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK7A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 6.8A (Ta) | 10V | 780mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 30W (Tc) | |||||||||||||||||||||
 |
TK5A45DA(STA4,Q,M) | 1.0600 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK5A45 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 450 V | 4.5A (Ta) | 10V | 1.75Ohm @ 2.3A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | |||||||||||||||||||||
 |
2SA1943-O(Q) | 2.9800 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | 150°C (TJ) | Through Hole | TO-3PL | 2SA1943 | 150 W | TO-3P(L) | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0075 | 100 | 230 V | 15 A | 5µA (ICBO) | PNP | 3V @ 800mA, 8A | 80 @ 1A, 5V | 30MHz | |||||||||||||||||||||||||
 |
2SC2881-Y(TE12L,ZC | 0.4900 | |
851 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-243AA | 500 mW | PW-MINI | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1,000 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 120 @ 100mA, 5V | 120MHz | ||||||||||||||||||||||||||
|
RN1404,LXHF | 0.3400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1404 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 47 kOhms | 47 kOhms | |||||||||||||||||||||||||
|
2SC2655-O,F(J | - | |
3435 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2655 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||
|
2SC1627A-Y,PASF(M | - | |
4598 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC1627 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 80 V | 400 mA | 100nA (ICBO) | NPN | 400mV @ 20mA, 200A | 70 @ 50mA, 2V | 100MHz | ||||||||||||||||||||||||||
 |
TPH5200FNH,L1Q | 2.9500 | |
11 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH5200 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 250 V | 26A (Tc) | 10V | 52mOhm @ 13A, 10V | 4V @ 1mA | 22 nC @ 10 V | ±20V | 2200 pF @ 100 V | - | 78W (Tc) | |||||||||||||||||||||
 |
TK6P65W,RQ | 1.4000 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK6P65 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 5.8A (Ta) | 10V | 1.05Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 60W (Tc) | |||||||||||||||||||||
|
TK10A60W5,S5VX | 2.0400 | |
32 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK10A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 9.7A (Ta) | 10V | 450mOhm @ 4.9A, 10V | 4.5V @ 500µA | 25 nC @ 10 V | ±30V | 720 pF @ 300 V | - | 30W (Tc) | |||||||||||||||||||||
|
TK20N60W5,S1VF | 3.9200 | |
4257 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK20N60 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 20A (Ta) | 10V | 175mOhm @ 10A, 10V | 4.5V @ 1mA | 55 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 165W (Tc) | |||||||||||||||||||||
 |
SSM3K17FU,LF | 0.3300 | |
62 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SSM3K17 | MOSFET (Metal Oxide) | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 50 V | 100mA (Ta) | 2.5V, 4V | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | ±7V | 7 pF @ 3 V | - | 150mW (Ta) | ||||||||||||||||||||||
 |
SSM6J512NU,LF | 0.4800 | |
31 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6J512 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 12 V | 10A (Ta) | 1.8V, 8V | 16.2mOhm @ 4A, 8V | 1V @ 1mA | 19.5 nC @ 4.5 V | ±10V | 1400 pF @ 6 V | - | 1.25W (Ta) | |||||||||||||||||||||
|
2SK3462(TE16L1,NQ) | - | |
7650 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SK3462 | MOSFET (Metal Oxide) | PW-MOLD | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 250 V | 3A (Ta) | 10V | 1.7Ohm @ 1.5A, 10V | 3.5V @ 1mA | 12 nC @ 10 V | ±20V | 267 pF @ 10 V | - | 20W (Tc) | ||||||||||||||||||||||
 |
GT10G131(TE12L,Q) | - | |
4336 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | GT10G131 | Standard | 1 W | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | - | - | 400 V | 200 A | 2.3V @ 4V, 200A | - | 3.1µs/2µs | |||||||||||||||||||||||||
|
GT60N321(Q) | - | |
5273 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-3PL | GT60N321 | Standard | 170 W | TO-3P(LH) | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 100 | - | 2.5 µs | - | 1000 V | 60 A | 120 A | 2.8V @ 15V, 60A | - | 330ns/700ns | |||||||||||||||||||||||
 |
GT8G133(TE12L,Q) | - | |
4443 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | GT8G133 | Standard | 600 mW | 8-TSSOP | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | - | - | 400 V | 150 A | 2.9V @ 4V, 150A | - | 1.7µs/2µs |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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