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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SC4793(LBSAN,F,M) | - |  |
3354 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SC4793 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | NPN | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 100MHz | ||||||||||||||||||
 |
2SC5201,T6F(J | - | |
4968 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC5201 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 600 V | 50 mA | 1µA (ICBO) | NPN | 1V @ 500mA, 20mA | 100 @ 20mA, 5V | - | ||||||||||||||||||
 |
2SC3665-Y,T2NSF(J | - | |
3531 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SC3665 | 1 W | MSTM | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | ||||||||||||||||||
|
2SA1931,KEHINQ(M | - | |
8804 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1931 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 50 V | 5 A | 1µA (ICBO) | PNP | 400mV @ 200mA, 2A | 100 @ 1A, 1V | 60MHz | ||||||||||||||||||
|
2SC2873-Y(TE12L,ZC | 0.4200 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-243AA | 500 mW | PW-MINI | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1,000 | 50 V | 2 A | 100nA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 120MHz | ||||||||||||||||||
 |
TPCA8062-H,LQ(CM | - | |
4497 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8062 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 28A (Ta) | 4.5V, 10V | 5.6mOhm @ 14A, 10V | 2.3V @ 300µA | 34 nC @ 10 V | ±20V | 2900 pF @ 10 V | - | 1.6W (Ta), 42W (Tc) | |||||||||||||
 |
TK160F10N1,LXGQ | 3.8300 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Not For New Designs | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK160F10 | MOSFET (Metal Oxide) | TO-220SM(W) | download | 3 (168 Hours) | EAR99 | 8541.21.0095 | 1,000 | N-Channel | 100 V | 160A (Ta) | 10V | 2.4mOhm @ 80A, 10V | 4V @ 1mA | 121 nC @ 10 V | ±20V | 8510 pF @ 10 V | - | 375W (Tc) | ||||||||||||||
 |
RN4902FE,LXHF(CT | 0.3800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4902 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200MHz, 250MHz | 10kOhms | 10kOhms | |||||||||||||||||
 |
2SA1020-Y(T6FJT,AF | - | |
7274 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||
 |
RN4984,LF(CT | 0.3500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4984 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 47kOhms | 47kOhms | ||||||||||||||||
|
RN2964FE(TE85L,F) | - | |
1932 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOT-563, SOT-666 | RN2964 | 100mW | ES6 | - | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 47kOhms | 47kOhms | |||||||||||||||||
 |
RN2971(TE85L,F) | 0.4700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2971 | 200mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz | 10kOhms | - | ||||||||||||||||
 |
XPW6R30ANB,L1XHQ | 1.9800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | XPW6R30 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 45A (Ta) | 6V, 10V | 6.3mOhm @ 22.5A, 10V | 3.5V @ 500µA | 52 nC @ 10 V | ±20V | 3240 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | ||||||||||||||
 |
SSM3K318R,LF | 0.4300 | |
710 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3K318 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 2.5A (Ta) | 4.5V, 10V | 107mOhm @ 2A, 10V | 2.8V @ 1mA | 7 nC @ 10 V | ±20V | 235 pF @ 30 V | - | 1W (Ta) | |||||||||||||
 |
TK6Q65W,S1Q | 1.4000 | |
8899 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TK6Q65 | MOSFET (Metal Oxide) | I-Pak | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 75 | N-Channel | 650 V | 5.8A (Ta) | 10V | 1.05Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 60W (Tc) | |||||||||||||
 |
TK7A60W5,S5VX | 1.6400 | |
100 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK7A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 7A (Ta) | 10V | 650mOhm @ 3.5A, 10V | 4.5V @ 350µA | 16 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 30W (Tc) | |||||||||||||
|
TK6A80E,S4X | 1.8900 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVIII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK6A80 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 6A (Ta) | 10V | 1.7Ohm @ 3A, 10V | 4V @ 600µA | 32 nC @ 10 V | ±30V | 1350 pF @ 25 V | - | 45W (Tc) | |||||||||||||
 |
TK170V65Z,LQ | 3.6700 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | TK170V65 | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 18A (Ta) | 10V | 170mOhm @ 9A, 10V | 4V @ 730µA | 29 nC @ 10 V | ±30V | 1635 pF @ 300 V | - | 150W (Tc) | |||||||||||||
|
TPH3R70APL,L1Q | 1.6400 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH3R70 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 45A, 10V | 2.5V @ 1mA | 67 nC @ 10 V | ±20V | 6300 pF @ 50 V | - | 960mW (Ta), 170W (Tc) | ||||||||||||||
 |
TP86R203NL,LQ | 0.9000 | |
19 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TP86R203 | MOSFET (Metal Oxide) | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 19A (Ta) | 4.5V, 10V | 6.2mOhm @ 9A, 10V | 2.3V @ 200µA | 17 nC @ 10 V | ±20V | 1400 pF @ 15 V | - | 1W (Tc) | |||||||||||||
|
2SJ438(CANO,A,Q) | - | |
6374 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-220-3 Full Pack | 2SJ438 | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 5A (Tj) | ||||||||||||||||||||||||||
|
TK12A50W,S5X | 2.1100 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 35W (Tc) | ||||||||||||||
|
TPCA8010-H(TE12LQM | - | |
6650 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8010 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 200 V | 5.5A (Ta) | 10V | 450mOhm @ 2.7A, 10V | 4V @ 1mA | 10 nC @ 10 V | ±20V | 600 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | ||||||||||||||
 |
TK25N60X,S1F | 4.6600 | |
4357 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV-H | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK25N60 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 25A (Ta) | 10V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 180W (Tc) | |||||||||||||
 |
SSM6N7002KFU,LXH | 0.3800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N7002 | MOSFET (Metal Oxide) | 285mW (Ta) | US6 | download | 1 (Unlimited) | 264-SSM6N7002KFULXHCT | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 60V | 300mA (Ta) | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | 40pF @ 10V | - | |||||||||||||||
 |
TK6A53D(STA4,Q,M) | 1.5000 | |
2959 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK6A53 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 525 V | 6A (Ta) | 10V | 1.3Ohm @ 3A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 35W (Tc) | |||||||||||||
 |
TK11P65W,RQ | 1.7300 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK11P65 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 11.1A (Ta) | 10V | 440mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | |||||||||||||
|
TPC8221-H,LQ(S | - | |
1370 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TPC8221 | MOSFET (Metal Oxide) | 450mW | 8-SOP | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 2,500 | 2 N-Channel (Dual) | 30V | 6A | 25mOhm @ 3A, 10V | 2.3V @ 100µA | 12nC @ 10V | 830pF @ 10V | - | ||||||||||||||||
|
TPN4R712MD,L1Q | 0.8500 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN4R712 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 20 V | 36A (Tc) | 2.5V, 4.5V | 4.7mOhm @ 18A, 4.5V | 1.2V @ 1mA | 65 nC @ 5 V | ±12V | 4300 pF @ 10 V | - | 42W (Tc) | |||||||||||||
 |
SSM6N55NU,LF | 0.4400 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6N55 | MOSFET (Metal Oxide) | 1W | 6-µDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 4A | 46mOhm @ 4A, 10V | 2.5V @ 100µA | 2.5nC @ 4.5V | 280pF @ 15V | Logic Level Gate |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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