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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK33S10N1L,LQ | 1.9000 |  |
7785 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK33S10 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | 264-TK33S10N1LLQCT | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 33A (Ta) | 4.5V, 10V | 9.7mOhm @ 16.5A, 10V | 2.5V @ 500µA | 33 nC @ 10 V | ±20V | 2250 pF @ 10 V | - | 125W (Tc) | ||||||||||||
 |
TPH3R506PL,LQ | 0.5263 | |
4366 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH3R506 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | - | 1 (Unlimited) | 264-TPH3R506PLLQTR | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 94A (Tc) | 4.5V, 10V | 3.5mOhm @ 47A, 10V | 2.5V @ 500µA | 55 nC @ 10 V | ±20V | 4420 pF @ 30 V | - | 830mW (Ta), 116W (Tc) | |||||||||||||
 |
TK40J20D,S1F(O | - | |
6850 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVIII | Tray | Active | 150°C | Through Hole | TO-3P-3, SC-65-3 | TK40J20 | MOSFET (Metal Oxide) | TO-3P(N) | - | 1 (Unlimited) | 264-TK40J20DS1F(O | EAR99 | 8541.29.0095 | 100 | N-Channel | 200 V | 40A (Ta) | 10V | 44mOhm @ 20A, 10V | 3.5V @ 1mA | 100 nC @ 10 V | ±20V | 4300 pF @ 100 V | - | 260W (Tc) | |||||||||||||
 |
TPCC8104,L1Q | - | |
5190 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerVDFN | TPCC8104 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | - | 1 (Unlimited) | 264-TPCC8104L1QTR | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 30 V | 20A (Ta) | 4.5V, 10V | 8.8mOhm @ 10A, 10V | 2V @ 500µA | 58 nC @ 10 V | +20V, -25V | 2260 pF @ 10 V | - | 700mW (Ta), 27W (Tc) | |||||||||||||
|
TK40S06N1L,LQ | 0.9100 | |
7800 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK40S06 | MOSFET (Metal Oxide) | DPAK+ | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 40A (Ta) | 4.5V, 10V | 10.5mOhm @ 20A, 10V | 2.5V @ 200µA | 26 nC @ 10 V | ±20V | 1650 pF @ 10 V | - | 88.2W (Tc) | |||||||||||||
 |
TPCP8107,LF | 0.7200 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SMD, Flat Lead | TPCP8107 | MOSFET (Metal Oxide) | PS-8 | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 40 V | 8A (Ta) | 6V, 10V | 18mOhm @ 4A, 10V | 3V @ 1mA | 44.6 nC @ 10 V | +10V, -20V | 2160 pF @ 10 V | - | 1W (Ta) | ||||||||||||||
|
TPCA8128,L1Q | - | |
9059 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerVDFN | TPCA8128 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | - | 1 (Unlimited) | 264-TPCA8128L1QTR | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 30 V | 34A (Ta) | 4.5V, 10V | 4.8mOhm @ 17A, 10V | 2V @ 500µA | 115 nC @ 10 V | +20V, -25V | 4800 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | |||||||||||||
|
TJ15S06M3L,LXHQ | 0.9500 | |
16 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ15S06 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 15A (Ta) | 6V, 10V | 50mOhm @ 7.5A, 10V | 3V @ 1mA | 36 nC @ 10 V | +10V, -20V | 1770 pF @ 10 V | - | 41W (Tc) | ||||||||||||||
 |
XK1R9F10QB,LXGQ | 3.9000 | |
4008 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | XK1R9F10 | MOSFET (Metal Oxide) | TO-220SM(W) | download | 3 (168 Hours) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 100 V | 160A (Ta) | 6V, 10V | 1.92mOhm @ 80A, 10V | 3.5V @ 1mA | 184 nC @ 10 V | ±20V | 11500 pF @ 10 V | - | 375W (Tc) | ||||||||||||||
|
TJ200F04M3L,LXHQ | 3.1700 | |
3367 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TJ200F04 | MOSFET (Metal Oxide) | TO-220SM(W) | download | 3 (168 Hours) | EAR99 | 8541.21.0095 | 1,000 | P-Channel | 40 V | 200A (Ta) | 6V, 10V | 1.8mOhm @ 100A, 10V | 3V @ 1mA | 460 nC @ 10 V | +10V, -20V | 1280 pF @ 10 V | - | 375W (Tc) | ||||||||||||||
|
TPHR7904PB,L1XHQ | 2.8200 | |
19 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SOIC (0.197", 5.00mm Width) | TPHR7904 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 5,000 | N-Channel | 40 V | 150A (Ta) | 6V, 10V | 0.79mOhm @ 75A, 10V | 3V @ 1mA | 85 nC @ 10 V | ±20V | 6650 pF @ 10 V | - | 960mW (Ta), 170W (Tc) | ||||||||||||||
|
TK1R4S04PB,LXHQ | 1.9500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK1R4S04 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 120A (Ta) | 6V, 10V | 1.9mOhm @ 60A, 6V | 3V @ 500µA | 103 nC @ 10 V | ±20V | 5500 pF @ 10 V | - | 180W (Tc) | ||||||||||||||
|
TJ90S04M3L,LXHQ | 1.6300 | |
3061 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ90S04 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 90A (Ta) | 4.5V, 10V | 4.3mOhm @ 45A, 10V | 2V @ 1mA | 172 nC @ 10 V | +10V, -20V | 7700 pF @ 10 V | - | 180W (Tc) | ||||||||||||||
|
TPH1R104PB,L1XHQ | 2.0900 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SOIC (0.197", 5.00mm Width) | TPH1R104 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 5,000 | N-Channel | 40 V | 120A (Ta) | 6V, 10V | 1.14mOhm @ 60A, 10V | 3V @ 500µA | 55 nC @ 10 V | ±20V | 4560 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | ||||||||||||||
 |
TK25S06N1L,LXHQ | 0.9300 | |
3804 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK25S06 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 25A (Ta) | 4.5V, 10V | 36.8mOhm @ 12.5A, 4.5V | 2.5V @ 100µA | 15 nC @ 10 V | ±20V | 855 pF @ 10 V | - | 57W (Tc) | ||||||||||||||
|
TW070J120B,S1Q | 32.4200 | |
104 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | -55°C ~ 175°C | Through Hole | TO-3P-3, SC-65-3 | TW070J120 | SiCFET (Silicon Carbide) | TO-3P(N) | download | 1 (Unlimited) | 264-TW070J120BS1Q | EAR99 | 8541.29.0095 | 25 | N-Channel | 1200 V | 36A (Tc) | 20V | 90mOhm @ 18A, 20V | 5.8V @ 20mA | 67 nC @ 20 V | ±25V, -10V | 1680 pF @ 800 V | Standard | 272W (Tc) | |||||||||||||
|
XPH4R714MC,L1XHQ | 1.7700 | |
53 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SOIC (0.197", 5.00mm Width) | XPH4R714 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 40 V | 60A (Ta) | 4.5V, 10V | 4.7mOhm @ 30A, 10V | 2.1V @ 1mA | 160 nC @ 10 V | +10V, -20V | 5640 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | ||||||||||||||
 |
TPW1R104PB,L1XHQ | 2.2600 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPW1R104 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 120A (Ta) | 6V, 10V | 1.14mOhm @ 60A, 10V | 3V @ 500µA | 55 nC @ 10 V | ±20V | 4560 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | ||||||||||||||
 |
TK33S10N1Z,LXHQ | 1.4200 | |
8142 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK33S10 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 33A (Ta) | 10V | 9.7mOhm @ 16.5A, 10V | 4V @ 500µA | 28 nC @ 10 V | ±20V | 2050 pF @ 10 V | - | 125W (Tc) | ||||||||||||||
 |
SSM3K62TU,LF | 0.4100 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Lead | SSM3K62 | MOSFET (Metal Oxide) | UFM | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 20 V | 800mA (Ta) | 1.2V, 4.5V | 57mOhm @ 800mA, 4.5V | 1V @ 1mA | 2 nC @ 4.5 V | ±8V | 177 pF @ 10 V | - | 1W (Ta) | |||||||||||||
|
SSM10N961L,ELF | 0.8700 | |
9155 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 10-XFLGA, CSP | MOSFET (Metal Oxide) | 880mW (Ta) | TCSPAG-341501 | - | ROHS3 Compliant | 1 (Unlimited) | 10,000 | 2 N-Channel (Half Bridge) | 30V | 9A (Ta) | 2.3V @ 250µA | 17.3nC @ 10V | - | - | |||||||||||||||||||
|
RN2412,LF | 0.0309 | |
8990 | 0.00000000 | Toshiba Semiconductor and Storage | * | Tape & Reel (TR) | Active | - | ROHS3 Compliant | 264-RN2412,LFTR | 3,000 | ||||||||||||||||||||||||||||||||
 |
RN1112(TE85L,F) | 0.2200 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1112 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 22 kOhms | ||||||||||||||||||
 |
RN2307,LF | 0.1800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2307 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200 MHz | 10 kOhms | 47 kOhms | |||||||||||||||||
 |
RN1708JE(TE85L,F) | 0.4000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN1708 | 100mW | ESV | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 4,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 22kOhms | 47kOhms | |||||||||||||||||
 |
RN1410,LF | 0.1900 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1410 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 4.7 kOhms | ||||||||||||||||||
 |
RN1106MFV,L3F(CT | 0.1800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1106 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 1mA, 5V | 4.7 kOhms | 47 kOhms | ||||||||||||||||||
|
RN1710JE(TE85L,F) | 0.4000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN1710 | 100mW | ESV | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 4.7kOhms | - | |||||||||||||||||
 |
RN2103MFV,L3F(CT | 0.1800 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2103 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 70 @ 10mA, 5V | 250 MHz | 22 kOhms | 22 kOhms | |||||||||||||||||
|
RN2102MFV,L3F(CT | 0.1800 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2102 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 10 kOhms | 10 kOhms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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