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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Test Condition | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Reverse Recovery Time (trr) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Voltage - Test | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) | Current Drain (Id) - Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SC5086-O,LF | - |  |
4240 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | SC-75, SOT-416 | 2SC5086 | 100mW | SSM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | - | 12V | 80mA | NPN | 80 @ 20mA, 10V | 7GHz | 1dB @ 500MHz | |||||||||||||||||||||||||||||||||||||
|
RN1111,LF(CT | 0.0355 | |
4214 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1111 | 100 mW | SSM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 10 kOhms | |||||||||||||||||||||||||||||||||||||
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2SK208-R(TE85L,F) | 0.4900 | |
36 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SK208 | 100 mW | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 8.2pF @ 10V | 50 V | 300 µA @ 10 V | 400 mV @ 100 nA | 6.5 mA | ||||||||||||||||||||||||||||||||||||||
 |
2SK2145-GR(TE85L,F | 0.6800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-74A, SOT-753 | 2SK2145 | 300 mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 13pF @ 10V | 2.6 mA @ 10 V | 200 mV @ 100 nA | ||||||||||||||||||||||||||||||||||||||||
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2SK879-Y(TE85L,F) | 0.4200 | |
24 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SK879 | 100 mW | USM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 8.2pF @ 10V | 1.2 mA @ 10 V | 400 mV @ 100 nA | ||||||||||||||||||||||||||||||||||||||||
 |
3SK292(TE85R,F) | - | |
9325 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 12.5 V | Surface Mount | SC-61AA | 3SK292 | 500MHz | MOSFET | SMQ | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel Dual Gate | 30mA | 10 mA | - | 26dB | 1.4dB | 6 V | ||||||||||||||||||||||||||||||||||||
 |
TK100A08N1,S4X | 3.7500 | |
2898 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK100A08 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 100A (Tc) | 10V | 3.2mOhm @ 50A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±20V | 9000 pF @ 40 V | - | 45W (Tc) | |||||||||||||||||||||||||||||||||
|
TK11A65W,S5X | 1.5300 | |
101 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK11A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 11.1A (Ta) | 10V | 390mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 35W (Tc) | |||||||||||||||||||||||||||||||||
|
TK22A10N1,S4X | 1.4100 | |
4640 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK22A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 22A (Tc) | 10V | 13.8mOhm @ 11A, 10V | 4V @ 300µA | 28 nC @ 10 V | ±20V | 1800 pF @ 50 V | - | 30W (Tc) | |||||||||||||||||||||||||||||||||
|
TK35A08N1,S4X | 1.0500 | |
24 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK35A08 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 35A (Tc) | 10V | 12.2mOhm @ 17.5A, 10V | 4V @ 300µA | 25 nC @ 10 V | ±20V | 1700 pF @ 40 V | - | 30W (Tc) | |||||||||||||||||||||||||||||||||
|
TK40A10N1,S4X | 1.8500 | |
100 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK40A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 40A (Tc) | 10V | 8.2mOhm @ 20A, 10V | 4V @ 500µA | 49 nC @ 10 V | ±20V | 3000 pF @ 50 V | - | 35W (Tc) | |||||||||||||||||||||||||||||||||
|
TK56A12N1,S4X | 2.0900 | |
30 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK56A12 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 120 V | 56A (Tc) | 10V | 7.5mOhm @ 28A, 10V | 4V @ 1mA | 69 nC @ 10 V | ±20V | 4200 pF @ 60 V | - | 45W (Tc) | |||||||||||||||||||||||||||||||||
|
TK65A10N1,S4X | 2.7900 | |
41 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK65A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 65A (Tc) | 10V | 4.8mOhm @ 32.5A, 10V | 4V @ 1mA | 81 nC @ 10 V | ±20V | 5400 pF @ 50 V | - | 45W (Tc) | |||||||||||||||||||||||||||||||||
 |
TPH3300CNH,L1Q | 1.6100 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH3300 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 150 V | 18A (Ta) | 10V | 33mOhm @ 9A, 10V | 4V @ 300µA | 10.6 nC @ 10 V | ±20V | 1100 pF @ 75 V | - | 1.6W (Ta), 57W (Tc) | |||||||||||||||||||||||||||||||||
 |
TK10J80E,S1E | 3.0700 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVIII | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TK10J80 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 25 | N-Channel | 800 V | 10A (Ta) | 10V | 1Ohm @ 5A, 10V | 4V @ 1mA | 46 nC @ 10 V | ±30V | 2000 pF @ 25 V | - | 250W (Tc) | |||||||||||||||||||||||||||||||||
 |
TK15S04N1L,LQ | 1.6400 | |
4104 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK15S04 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 15A (Ta) | 4.5V, 10V | 17.8mOhm @ 7.5A, 10V | 2.5V @ 100µA | 10 nC @ 10 V | ±20V | 610 pF @ 10 V | - | 46W (Tc) | |||||||||||||||||||||||||||||||||
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TK9A90E,S4X | 2.2100 | |
40 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVIII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK9A90 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 9A (Ta) | 10V | 1.3Ohm @ 4.5A, 10V | 4V @ 900µA | 46 nC @ 10 V | ±30V | 2000 pF @ 25 V | - | 50W (Tc) | |||||||||||||||||||||||||||||||||
|
TPH5900CNH,L1Q | 1.0100 | |
3577 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH5900 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 150 V | 9A (Ta) | 10V | 59mOhm @ 4.5A, 10V | 4V @ 200µA | 7 nC @ 10 V | ±20V | 600 pF @ 75 V | - | 1.6W (Ta), 42W (Tc) | |||||||||||||||||||||||||||||||||
 |
TPN11006NL,LQ | 0.9400 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN11006 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 17A (Tc) | 4.5V, 10V | 11.4mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23 nC @ 10 V | ±20V | 2000 pF @ 30 V | - | 700mW (Ta), 30W (Tc) | |||||||||||||||||||||||||||||||||
 |
RN1902,LF(CT | 0.3500 | |
3188 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1902 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250MHz | 10kOhms | 10kOhms | ||||||||||||||||||||||||||||||||||||
 |
SSM3K337R,LF | 0.4600 | |
8818 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3K337 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 38 V | 2A (Ta) | 4V, 10V | 150mOhm @ 2A, 10V | 1.7V @ 1mA | 3 nC @ 10 V | ±20V | 120 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||||||||||||
 |
2SJ304(F) | - | |
2391 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SJ304 | MOSFET (Metal Oxide) | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | P-Channel | 60 V | 14A (Ta) | 4V, 10V | 120mOhm @ 7A, 10V | 2V @ 1mA | 45 nC @ 10 V | ±20V | 1200 pF @ 10 V | - | 40W (Tc) | ||||||||||||||||||||||||||||||||||
 |
2SK1119(F) | - | |
6890 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 | 2SK1119 | MOSFET (Metal Oxide) | TO-220AB | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 1000 V | 4A (Ta) | 10V | 3.8Ohm @ 2A, 10V | 3.5V @ 1mA | 60 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 100W (Tc) | ||||||||||||||||||||||||||||||||||
|
2SK2883(TE24L,Q) | - | |
9932 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SK2883 | MOSFET (Metal Oxide) | TO-220SM | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 800 V | 3A (Ta) | 10V | 3.6Ohm @ 1.5A, 10V | 4V @ 1mA | 25 nC @ 10 V | ±30V | 750 pF @ 25 V | - | 75W (Tc) | ||||||||||||||||||||||||||||||||||
 |
2SK3388(TE24L,Q) | - | |
7495 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SC-97 | 2SK3388 | MOSFET (Metal Oxide) | 4-TFP (9.2x9.2) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 250 V | 20A (Ta) | 10V | 105mOhm @ 10A, 10V | 3.5V @ 1mA | 100 nC @ 10 V | ±20V | 4000 pF @ 10 V | - | 125W (Tc) | ||||||||||||||||||||||||||||||||||
|
GT10J312(Q) | - | |
7639 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | GT10J312 | Standard | 60 W | TO-220SM | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | 300V, 10A, 100Ohm, 15V | 200 ns | - | 600 V | 10 A | 20 A | 2.7V @ 15V, 10A | - | 400ns/400ns | |||||||||||||||||||||||||||||||||||
 |
GT30J121(Q) | 3.3300 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-3P-3, SC-65-3 | GT30J121 | Standard | 170 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | 300V, 30A, 24Ohm, 15V | - | 600 V | 30 A | 60 A | 2.45V @ 15V, 30A | 1mJ (on), 800µJ (off) | 90ns/300ns | ||||||||||||||||||||||||||||||||||||
|
GT50J121(Q) | - | |
6353 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-3PL | GT50J121 | Standard | 240 W | TO-3P(LH) | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 100 | 300V, 50A, 13Ohm, 15V | - | 600 V | 50 A | 100 A | 2.45V @ 15V, 50A | 1.3mJ (on), 1.34mJ (off) | 90ns/300ns | ||||||||||||||||||||||||||||||||||||
|
TPCA8A04-H(TE12L,Q | - | |
9760 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8A04 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 44A (Ta) | 4.5V, 10V | 3.2mOhm @ 22A, 10V | 2.3V @ 1mA | 59 nC @ 10 V | ±20V | 5700 pF @ 10 V | - | - | ||||||||||||||||||||||||||||||||||
|
TPCP8003-H(TE85L,F | - | |
2466 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TPCP8003 | MOSFET (Metal Oxide) | PS-8 (2.9x2.4) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 100 V | 2.2A (Ta) | 4.5V, 10V | 180mOhm @ 1.1A, 10V | 2.3V @ 1mA | 7.5 nC @ 10 V | ±20V | 360 pF @ 10 V | - | 840mW (Ta) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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