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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | ECCN | HTSUS | Standard Package | Configuration | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RN1131MFV,L3F | 0.1800 |  |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1131 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 120 @ 1mA, 5V | 100 kOhms | ||||||||||||||||||
 |
SSM6K405TU,LF | 0.3700 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6K405 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 2A (Ta) | 1.5V, 4V | 126mOhm @ 1A, 4V | 1V @ 1mA | 3.4 nC @ 4 V | ±10V | 195 pF @ 10 V | - | 500mW (Ta) | ||||||||||||
 |
TK5A60D(STA4,Q,M) | 1.5700 | |
3980 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK5A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 5A (Ta) | 10V | 1.43Ohm @ 2.5A, 10V | 4.4V @ 1mA | 16 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 35W (Tc) | ||||||||||||
 |
2SA1020-O(TE6,F,M) | - | |
3483 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||
 |
TK5R3E08QM,S1X | 1.5800 | |
98 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tube | Active | 175°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 120A (Tc) | 6V, 10V | 5.3mOhm @ 50A, 10V | 3.5V @ 700µA | 55 nC @ 10 V | ±20V | 3980 pF @ 40 V | - | 150W (Tc) | |||||||||||||
 |
TK11P65W,RQ | 1.7300 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK11P65 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 11.1A (Ta) | 10V | 440mOhm @ 5.5A, 10V | 3.5V @ 450µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | ||||||||||||
 |
2SA2154CT-GR,L3F | 0.3200 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | 2SA2154 | 100 mW | CST3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 50 V | 100 mA | 100nA (ICBO) | PNP | 300mV @ 10mA, 100mA | 200 @ 2mA, 6V | 80MHz | ||||||||||||||||
|
SSM6K403TU,LF | 0.4900 | |
6811 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SSM6K403 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 4.2A (Ta) | 1.5V, 4V | 28mOhm @ 3A, 4V | 1V @ 1mA | 16.8 nC @ 4 V | ±10V | 1050 pF @ 10 V | - | 500mW (Ta) | ||||||||||||
|
RN2114MFV,L3F | 0.2000 | |
7888 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2114 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 50 @ 10mA, 5V | 1 kOhms | 10 kOhms | ||||||||||||||||
 |
SSM6N815R,LF | 0.4500 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6N815 | MOSFET (Metal Oxide) | 1.8W (Ta) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 100V | 2A (Ta) | 103mOhm @ 2A, 10V | 2.5V @ 100µA | 3.1nC @ 4.5V | 290pF @ 15V | Logic Level Gate, 4V Drive | ||||||||||||||
 |
SSM6N44FE,LM | 0.4300 | |
111 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6N44 | MOSFET (Metal Oxide) | 150mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 N-Channel (Dual) | 30V | 100mA | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 8.5pF @ 3V | Logic Level Gate | ||||||||||||||
|
TK100E08N1,S1X | 3.9800 | |
7657 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK100E08 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 100A (Ta) | 10V | 3.2mOhm @ 50A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±20V | 9000 pF @ 40 V | - | 255W (Tc) | ||||||||||||
 |
TJ60S04M3L,LXHQ | 1.4100 | |
3162 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ60S04 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 60A (Ta) | 6V, 10V | 6.3mOhm @ 30A, 10V | 3V @ 1mA | 125 nC @ 10 V | +10V, -20V | 6510 pF @ 10 V | - | 90W (Tc) | |||||||||||||
|
2SK3342(TE16L1,NQ) | - | |
3368 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SK3342 | MOSFET (Metal Oxide) | PW-MOLD | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 250 V | 4.5A (Ta) | 10V | 1Ohm @ 2.5A, 10V | 3.5V @ 1mA | 10 nC @ 10 V | ±20V | 440 pF @ 10 V | - | 20W (Tc) | |||||||||||||
|
TK290P65Y,RQ | 1.9500 | |
7937 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK290P65 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 11.5A (Tc) | 10V | 290mOhm @ 5.8A, 10V | 4V @ 450µA | 25 nC @ 10 V | ±30V | 730 pF @ 300 V | - | 100W (Tc) | ||||||||||||
 |
TK17N65W,S1F | 3.8600 | |
7047 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK17N65 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 17.3A (Ta) | 10V | 200mOhm @ 8.7A, 10V | 3.5V @ 900µA | 45 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 165W (Tc) | ||||||||||||
 |
SSM6N7002BFU(T5L,F | - | |
3812 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Obsolete | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N7002 | MOSFET (Metal Oxide) | 300mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 60V | 200mA | 2.1Ohm @ 500mA, 10V | 3.1V @ 250µA | - | 17pF @ 25V | Logic Level Gate | |||||||||||||||
|
TK16N60W,S1VF | 4.1900 | |
7281 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK16N60 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | ||||||||||||
|
TK20P04M1,RQ(S | - | |
3613 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK20P04 | MOSFET (Metal Oxide) | DPAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 20A (Ta) | 4.5V, 10V | 29mOhm @ 10A, 10V | 2.3V @ 100µA | 15 nC @ 10 V | ±20V | 985 pF @ 10 V | - | 27W (Tc) | ||||||||||||
|
SSM6P35FE(TE85L,F) | 0.4400 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6P35 | MOSFET (Metal Oxide) | 150mW | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 P-Channel (Dual) | 20V | 100mA | 8Ohm @ 50mA, 4V | 1V @ 1mA | - | 12.2pF @ 3V | Logic Level Gate | ||||||||||||||
 |
SSM3J114TU(T5L,T) | - | |
2761 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | SSM3J114 | MOSFET (Metal Oxide) | UFM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 1.8A (Ta) | 1.5V, 4V | 149mOhm @ 600mA, 4V | 1V @ 1mA | 7.7 nC @ 4 V | ±8V | 331 pF @ 10 V | - | 500mW (Ta) | |||||||||||||
 |
TK055U60Z1,RQ | 5.5900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerSFN | MOSFET (Metal Oxide) | TOLL | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 40A (Ta) | 10V | 55mOhm @ 15A, 10V | 4V @ 1.69mA | 65 nC @ 10 V | ±30V | 3680 pF @ 300 V | - | 270W (Tc) | |||||||||||||
 |
SSM6N55NU,LF | 0.4400 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6N55 | MOSFET (Metal Oxide) | 1W | 6-µDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 4A | 46mOhm @ 4A, 10V | 2.5V @ 100µA | 2.5nC @ 4.5V | 280pF @ 15V | Logic Level Gate | ||||||||||||||
 |
TK4K1A60F,S4X | 0.8300 | |
8560 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK4K1A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 2A (Ta) | 10V | 4.1Ohm @ 1A, 10V | 4V @ 190µA | 8 nC @ 10 V | ±30V | 270 pF @ 300 V | - | 30W (Tc) | ||||||||||||
 |
TK22A65X,S5X | 3.8400 | |
188 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK22A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 22A (Ta) | 10V | 150mOhm @ 11A, 10V | 3.5V @ 1.1mA | 50 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 45W (Tc) | ||||||||||||
|
TK380A65Y,S4X | 1.8300 | |
95 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK380A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W (Tc) | ||||||||||||
 |
TPN5R203PL,LQ | 0.6400 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN5R203 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 38A (Tc) | 4.5V, 10V | 5.2mOhm @ 19A, 10V | 2.1V @ 200µA | 22 nC @ 10 V | ±20V | 1975 pF @ 15 V | - | 610mW (Ta), 61W (Tc) | |||||||||||||
|
TK28N65W5,S1F | 6.6700 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-247-3 | TK28N65 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 27.6A (Ta) | 10V | 130mOhm @ 13.8A, 10V | 4.5V @ 1.6mA | 90 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | ||||||||||||
 |
TPH1R405PL,L1Q | 1.5800 | |
9110 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH1R405 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 45 V | 120A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2.4V @ 500µA | 74 nC @ 10 V | ±20V | 6300 pF @ 22.5 V | - | 960mW (Ta), 132W (Tc) | |||||||||||||
 |
TPWR6003PL,L1Q | 3.0600 | |
458 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerWDFN | TPWR6003 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 150A (Tc) | 4.5V, 10V | 0.6mOhm @ 50A, 10V | 2.1V @ 1mA | 110 nC @ 10 V | ±20V | 10000 pF @ 15 V | - | 960mW (Ta), 170W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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