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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM3J114TU(T5L,T) | - |  |
2761 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | SSM3J114 | MOSFET (Metal Oxide) | UFM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 1.8A (Ta) | 1.5V, 4V | 149mOhm @ 600mA, 4V | 1V @ 1mA | 7.7 nC @ 4 V | ±8V | 331 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||
|
SSM3J120TU,LF | - | |
2941 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | SSM3J120 | MOSFET (Metal Oxide) | UFM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 4A (Ta) | 1.5V, 4V | 38mOhm @ 3A, 4V | 1V @ 1mA | 22.3 nC @ 4 V | ±8V | 1484 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||
 |
SSM3K315T(TE85L,F) | - | |
5970 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3K315 | MOSFET (Metal Oxide) | TSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 6A (Ta) | 4.5V, 10V | 27.6mOhm @ 4A, 10V | 2.5V @ 1mA | 10.1 nC @ 10 V | ±20V | 450 pF @ 15 V | - | 700mW (Ta) | |||||||||||||||||
 |
SSM6K211FE,LF | 0.5400 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6K211 | MOSFET (Metal Oxide) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | N-Channel | 20 V | 3.2A (Ta) | 1.5V, 4.5V | 47mOhm @ 2A, 4.5V | 1V @ 1mA | 10.8 nC @ 4.5 V | ±10V | 510 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||
 |
SSM6P15FE(TE85L,F) | 0.4200 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6P15 | MOSFET (Metal Oxide) | 150mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 P-Channel (Dual) | 30V | 100mA | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | - | 9.1pF @ 3V | Logic Level Gate | ||||||||||||||||||
|
SSM6P35FE(TE85L,F) | 0.4400 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6P35 | MOSFET (Metal Oxide) | 150mW | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 P-Channel (Dual) | 20V | 100mA | 8Ohm @ 50mA, 4V | 1V @ 1mA | - | 12.2pF @ 3V | Logic Level Gate | ||||||||||||||||||
|
SSM6J206FE(TE85L,F | - | |
3596 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6J206 | MOSFET (Metal Oxide) | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | P-Channel | 20 V | 2A (Ta) | 1.8V, 4V | 130mOhm @ 1A, 4V | 1V @ 1mA | ±8V | 335 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||
|
SSM6K202FE,LF | 0.4600 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6K202 | MOSFET (Metal Oxide) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | N-Channel | 30 V | 2.3A (Ta) | 1.8V, 4V | 85mOhm @ 1.5A, 4V | 1V @ 1mA | ±12V | 270 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||
 |
TK4A60D(STA4,Q,M) | - | |
6275 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK4A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 35W (Tc) | ||||||||||||||||
 |
TK50P04M1(T6RSS-Q) | - | |
3751 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK50P04 | MOSFET (Metal Oxide) | D-Pak | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 50A (Ta) | 4.5V, 10V | 8.7mOhm @ 25A, 10V | 2.3V @ 500µA | 38 nC @ 10 V | ±20V | 2600 pF @ 10 V | - | 60W (Tc) | ||||||||||||||||
|
TK6A65D(STA4,Q,M) | 1.9400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK6A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 6A (Ta) | 10V | 1.11Ohm @ 3A, 10V | 4V @ 1mA | 20 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 45W (Tc) | ||||||||||||||||
|
TK8A65D(STA4,Q,M) | 2.4000 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Bulk | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 8A (Ta) | 10V | 840mOhm @ 4A, 10V | 4V @ 1mA | 25 nC @ 10 V | ±30V | 1350 pF @ 25 V | - | 45W (Tc) | ||||||||||||||||
 |
TPCC8002-H(TE12LQM | - | |
2576 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | TPCC8002 | MOSFET (Metal Oxide) | 8-TSON Advance (3.3x3.3) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 22A (Ta) | 4.5V, 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 27 nC @ 10 V | ±20V | 2500 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | |||||||||||||||||
|
TPCC8005-H(TE12LQM | - | |
7033 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | TPCC8005 | MOSFET (Metal Oxide) | 8-TSON Advance (3.3x3.3) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 26A (Ta) | 4.5V, 10V | 6.4mOhm @ 13A, 10V | 2.3V @ 500µA | 35 nC @ 10 V | ±20V | 2900 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | |||||||||||||||||
 |
TPCP8004(TE85L,F) | - | |
6792 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TPCP8004 | MOSFET (Metal Oxide) | PS-8 (2.9x2.4) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 8.3A (Ta) | 4.5V, 10V | 8.5mOhm @ 4.2A, 10V | 2.5V @ 1mA | 26 nC @ 10 V | ±20V | 1270 pF @ 10 V | - | 840mW (Ta) | |||||||||||||||||
 |
TPCP8103-H(TE85LFM | - | |
9306 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TPCP8103 | MOSFET (Metal Oxide) | PS-8 (2.9x2.4) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 40 V | 4.8A (Ta) | 4.5V, 10V | 40mOhm @ 2.4A, 10V | 2V @ 1mA | 19 nC @ 10 V | ±20V | 800 pF @ 10 V | - | 840mW (Ta) | ||||||||||||||||
 |
RN2312(TE85L,F) | 0.2700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2312 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200 MHz | 22 kOhms | ||||||||||||||||||||
|
SSM3J108TU(TE85L) | - | |
2405 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | SSM3J108 | MOSFET (Metal Oxide) | UFM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 1.8A (Ta) | 1.8V, 4V | 158mOhm @ 800mA, 4V | 1V @ 1mA | ±8V | 250 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||||
 |
TK10A60W,S4VX | 2.7800 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK10A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 30W (Tc) | ||||||||||||||||
 |
TK12A60W,S4VX | 3.9800 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK12A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 11.5A (Ta) | 10V | 300mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 35W (Tc) | ||||||||||||||||
 |
TPN14006NH,L1Q | 0.3533 | |
4019 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN14006 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 13A (Ta) | 6.5V, 10V | 14mOhm @ 6.5A, 10V | 4V @ 200µA | 15 nC @ 10 V | ±20V | 1300 pF @ 30 V | - | 700mW (Ta), 30W (Tc) | ||||||||||||||||
|
SSM6J213FE(TE85L,F | 0.4700 | |
8736 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6J213 | MOSFET (Metal Oxide) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | P-Channel | 20 V | 2.6A (Ta) | 1.5V, 4.5V | 103mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7 nC @ 4.5 V | ±8V | 290 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||
 |
SSM6J505NU,LF | 0.5100 | |
19 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6J505 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 12 V | 12A (Ta) | 1.2V, 4.5V | 12mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6 nC @ 4.5 V | ±6V | 2700 pF @ 10 V | - | 1.25W (Ta) | ||||||||||||||||
 |
TPN2R503NC,L1Q | - | |
1432 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN2R503 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 40A (Ta) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | 2.3V @ 500µA | 40 nC @ 10 V | ±20V | 2230 pF @ 15 V | - | 700mW (Ta), 35W (Tc) | ||||||||||||||||
 |
TK32E12N1,S1X | 1.5300 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK32E12 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 120 V | 60A (Tc) | 10V | 13.8mOhm @ 16A, 10V | 4V @ 500µA | 34 nC @ 10 V | ±20V | 2000 pF @ 60 V | - | 98W (Tc) | ||||||||||||||||
 |
TK12Q60W,S1VQ | 2.0600 | |
75 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TK12Q60 | MOSFET (Metal Oxide) | I-Pak | download | ROHS3 Compliant | 1 (Unlimited) | TK12Q60WS1VQ | EAR99 | 8541.29.0095 | 75 | N-Channel | 600 V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | |||||||||||||||
 |
2SK2035(T5L,F,T) | - | |
1230 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | 2SK2035 | MOSFET (Metal Oxide) | SSM | - | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 100mA (Ta) | 2.5V | 12Ohm @ 10mA, 2.5V | - | 10V | 8.5 pF @ 3 V | - | 100mW (Ta) | ||||||||||||||||||
 |
2SK2145-BL(TE85L,F | 0.6800 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-74A, SOT-753 | 2SK2145 | 300 mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 13pF @ 10V | 6 mA @ 10 V | 200 mV @ 100 nA | |||||||||||||||||||||||
|
2SK880-BL(TE85L,F) | 0.5900 | |
14 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SK880 | 100 mW | SC-70 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 13pF @ 10V | 50 V | 6 mA @ 10 V | 1.5 V @ 100 nA | ||||||||||||||||||||||
 |
RN1104MFV,L3F | 0.1700 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1104 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 47 kOhms | 47 kOhms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
Wishlist (0 Items) 