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FETs, MOSFETs(56295)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STW18NM80 | 7.6800 |  |
7149 | 0.00000000 | STMicroelectronics | MDmesh™ | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | STW18 | MOSFET (Metal Oxide) | TO-247-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 497-10085-5 | EAR99 | 8541.29.0095 | 30 | N-Channel | 800 V | 17A (Tc) | 10V | 295mOhm @ 8.5A, 10V | 5V @ 250µA | 70 nC @ 10 V | ±30V | 2070 pF @ 50 V | - | 190W (Tc) | |||||||||||
 |
TP65H070G4PS | 8.6500 | |
1 | 0.00000000 | Transphorm | SuperGaN® | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | GaNFET (Gallium Nitride) | TO-220AB | - | ROHS3 Compliant | 1 (Unlimited) | 1707-TP65H070G4PS | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 29A (Tc) | 10V | 85mOhm @ 18A, 10V | 4.7V @ 700µA | 9 nC @ 10 V | ±20V | 638 pF @ 400 V | - | 96W (Tc) | |||||||||||||
 |
A5G35H055NT4 | 22.5600 | |
7758 | 0.00000000 | NXP USA Inc. | * | Tape & Reel (TR) | Active | - | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0075 | 500 | ||||||||||||||||||||||||||||||
 |
NP45N06VDK-E1-AY | 1.2500 | |
2 | 0.00000000 | Renesas Electronics America Inc | - | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | NP45N06 | MOSFET (Metal Oxide) | TO-252 (MP-3ZP) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 60 V | 45A (Tc) | 4.5V, 10V | 11.6mOhm @ 23A, 10V | 2.5V @ 250µA | 38 nC @ 10 V | ±20V | 2300 pF @ 25 V | - | 1.2W (Ta), 75W (Tc) | ||||||||||||
 |
AOD609G | 0.9600 | |
8427 | 0.00000000 | Alpha & Omega Semiconductor Inc. | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-5, DPak (4 Leads + Tab), TO-252AD | AOD60 | MOSFET (Metal Oxide) | 2W (Ta), 27W (Tc), 2W (Ta), 30W (Tc) | TO-252-4L | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N and P-Channel Complementary | 40V | 12A (Tc) | 30mOhm @ 12A, 10V, 45mOhm @ 12A, 10V | 3V @ 250µA | 13nC @ 10V, 21nC @ 10V | 545pF @ 20V, 890pF @ 20V | - | ||||||||||||||
 |
2N7000-D75Z | 0.4000 | |
19 | 0.00000000 | onsemi | - | Cut Tape (CT) | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | 2N7000 | MOSFET (Metal Oxide) | TO-92-3 | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.21.0095 | 2,000 | N-Channel | 60 V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 3V @ 1mA | ±20V | 50 pF @ 25 V | - | 400mW (Ta) | |||||||||||||
|
MRF5S9150HR5 | 83.1600 | |
100 | 0.00000000 | Freescale Semiconductor | - | Bulk | Active | 68 V | SOT-957A | MRF5 | 880MHz | LDMOS | NI-780H-2L | - | ROHS3 Compliant | 3 (168 Hours) | Vendor Undefined | EAR99 | 8542.39.0001 | 1 | - | 1.5 A | 33W | 19.7dB | - | 28 V | |||||||||||||||||
 |
IRL3716STRLPBF | - | |
9372 | 0.00000000 | Infineon Technologies | HEXFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | 1 (Unlimited) | REACH Unaffected | SP001578504 | EAR99 | 8541.29.0095 | 800 | N-Channel | 20 V | 180A (Tc) | 4.5V, 10V | 4mOhm @ 90A, 10V | 3V @ 250µA | 79 nC @ 4.5 V | ±20V | 5090 pF @ 10 V | - | 210W (Tc) | |||||||||||||
 |
IPI65R420CFDXKSA1 | - | |
4661 | 0.00000000 | Infineon Technologies | CoolMOS™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | IPI65R | MOSFET (Metal Oxide) | PG-TO262-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 500 | N-Channel | 650 V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 340µA | 32 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 83.3W (Tc) | |||||||||||||
 |
NTTFS4930NTWG | - | |
7753 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | NTTFS4930 | MOSFET (Metal Oxide) | 8-WDFN (3.3x3.3) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 4.5A (Ta), 23A (Tc) | 4.5V, 10V | 23mOhm @ 6A, 10V | 2.2V @ 250µA | 5.5 nC @ 4.5 V | ±20V | 476 pF @ 15 V | - | 790mW (Ta), 20.2W (Tc) | ||||||||||||
 |
SIRA58ADP-T1-RE3 | 1.1900 | |
7284 | 0.00000000 | Vishay Siliconix | TrenchFET® Gen IV | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | SIRA58 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 32.3A (Ta), 109A (Tc) | 4.5V, 10V | 2.65mOhm @ 15A, 10V | 2.4V @ 250µA | 61 nC @ 10 V | +20V, -16V | 3030 pF @ 20 V | - | 5W (Ta), 56.8W (Tc) | |||||||||||||
 |
IRLZ34STRL | - | |
6422 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IRLZ34 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 800 | N-Channel | 60 V | 30A (Tc) | 4V, 5V | 50mOhm @ 18A, 5V | 2V @ 250µA | 35 nC @ 5 V | ±10V | 1600 pF @ 25 V | - | 3.7W (Ta), 88W (Tc) | |||||||||||||
|
RJK6011DJE-00#Z0 | - | |
6651 | 0.00000000 | Renesas Electronics America Inc | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body (Formed Leads) | MOSFET (Metal Oxide) | TO-92MOD | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 2,500 | N-Channel | 600 V | 100mA (Ta) | 10V | 52Ohm @ 50mA, 10V | - | 3.7 nC @ 10 V | ±30V | 25 pF @ 25 V | - | 900mW (Ta) | |||||||||||||
|
FDMB3800N | - | |
6599 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | FDMB3800 | MOSFET (Metal Oxide) | 750mW | 8-MLP, MicroFET (3x1.9) | download | EAR99 | 8542.39.0001 | 587 | 2 N-Channel (Dual) | 30V | 4.8A | 40mOhm @ 4.8A, 10V | 3V @ 250µA | 5.6nC @ 5V | 465pF @ 15V | Logic Level Gate | |||||||||||||||||
|
BLF8G22LS-200 | - | |
7631 | 0.00000000 | Ampleon USA Inc. | * | Tape & Reel (TR) | Obsolete | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | OBSOLETE | 100 | ||||||||||||||||||||||||||||||
 |
TK560A60Y,S4X | 1.5300 | |
1059 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK560A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 30W | |||||||||||||
 |
RF4C100BCTCR | 0.8500 | |
3 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerUDFN | RF4C100 | MOSFET (Metal Oxide) | HUML2020L8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 10A (Ta) | 1.8V, 4.5V | 15.6mOhm @ 10A, 4.5V | 1.2V @ 1mA | 23.5 nC @ 4.5 V | ±8V | 1660 pF @ 10 V | - | 2W (Ta) | ||||||||||||
 |
G20N03K | 0.5500 | |
4 | 0.00000000 | Goford Semiconductor | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252 | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 30A (Tc) | 4.5V, 10V | 20mOhm @ 10A, 10V | 2.5V @ 250µA | 18 nC @ 10 V | ±20V | 923 pF @ 15 V | - | 33W (Tc) | |||||||||||||
 |
IXTH16N10D2 | 17.4000 | |
6666 | 0.00000000 | IXYS | Depletion | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | IXTH16 | MOSFET (Metal Oxide) | TO-247 (IXTH) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 100 V | 16A (Tc) | 0V | 64mOhm @ 8A, 0V | - | 225 nC @ 5 V | ±20V | 5700 pF @ 25 V | Depletion Mode | 830W (Tc) | ||||||||||||
 |
TSM056NH04CV RGG | 2.9000 | |
10 | 0.00000000 | Taiwan Semiconductor Corporation | PerFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-PDFN (3.1x3.1) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 1801-TSM056NH04CVRGGTR | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 16A (Ta), 54A (Tc) | 7V, 10V | 5.6mOhm @ 27A, 10V | 3.6V @ 250µA | 29 nC @ 10 V | ±20V | 1828 pF @ 25 V | - | 34W (Tc) | ||||||||||||
 |
STF36N60M6 | 6.3400 | |
6727 | 0.00000000 | STMicroelectronics | MDmesh™ M6 | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | STF36 | MOSFET (Metal Oxide) | TO-220FP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.75V @ 250µA | 44.3 nC @ 10 V | ±25V | 1960 pF @ 100 V | - | 40W (Tc) | ||||||||||||
|
SCTW100N65G2AG | 37.7600 | |
1183 | 0.00000000 | STMicroelectronics | Automotive, AEC-Q101 | Tube | Active | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | SCTW100 | SiCFET (Silicon Carbide) | HiP247™ | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 497-SCTW100N65G2AG | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 100A (Tc) | 18V | 26mOhm @ 50A, 18V | 5V @ 5mA | 162 nC @ 18 V | +22V, -10V | 3315 pF @ 520 V | - | 420W (Tc) | |||||||||||
|
IRF740ASTRLPBF | 3.0900 | |
9742 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IRF740 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 800 | N-Channel | 400 V | 10A (Tc) | 10V | 550mOhm @ 6A, 10V | 4V @ 250µA | 36 nC @ 10 V | ±30V | 1030 pF @ 25 V | - | 125W (Tc) | |||||||||||||
 |
BLF2324M8LS200PU | 144.3600 | |
3130 | 0.00000000 | Ampleon USA Inc. | - | Tray | Not For New Designs | 65 V | Surface Mount | SOT-539B | BLF2324 | 2.3GHz ~ 2.4GHz | LDMOS | SOT539B | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0075 | 20 | Dual, Common Source | - | 1.74 A | 60W | 17.2dB | - | 28 V | |||||||||||||||
 |
IRL520PBF | 1.4600 | |
8 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IRL520 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | *IRL520PBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 9.2A (Tc) | 4V, 5V | 270mOhm @ 5.5A, 5V | 2V @ 250µA | 12 nC @ 5 V | ±10V | 490 pF @ 25 V | - | 60W (Tc) | ||||||||||||
 |
FDPF20N50FT | 1.0000 | |
6889 | 0.00000000 | Fairchild Semiconductor | UniFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 500 V | 20A (Tc) | 10V | 260mOhm @ 10A, 10V | 5V @ 250µA | 65 nC @ 10 V | ±30V | 3390 pF @ 25 V | - | 38.5W (Tc) | ||||||||||||||||
 |
IRF7501TR | - | |
7557 | 0.00000000 | Infineon Technologies | - | Cut Tape (CT) | Obsolete | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | IRF7501 | MOSFET (Metal Oxide) | 1.25W | Micro8™ | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 4,000 | 2 N-Channel (Dual) | 20V | 2.4A | 135mOhm @ 1.7A, 4.5V | 700mV @ 250µA | 8nC @ 4.5V | 260pF @ 15V | Logic Level Gate | |||||||||||||||
 |
HS8MA2TCR1 | 1.0600 | |
750 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerWDFN | HS8MA2 | MOSFET (Metal Oxide) | 2W (Ta) | DFN3333-9DC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N and P-Channel | 30V | 5A (Ta), 7A (Ta) | 80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V | 2.5V @ 1mA | 7.8nC @ 10V, 8.4nC @ 10V | 320pF @ 10V, 365pF @ 10V | - | ||||||||||||||
 |
TK6A55DA(STA4,Q,M) | 1.4900 | |
8915 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK6A55 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 550 V | 5.5A (Ta) | 10V | 1.48Ohm @ 2.8A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 35W (Tc) | |||||||||||||
 |
SI6925ADQ-T1-GE3 | - | |
7456 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | SI6925 | MOSFET (Metal Oxide) | 800mW | 8-TSSOP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 3.3A | 45mOhm @ 3.9A, 4.5V | 1.8V @ 250µA | 6nC @ 4.5V | - | Logic Level Gate |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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