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FETs, MOSFETs(56295)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDL100N50F | 18.2100 |  |
7505 | 0.00000000 | onsemi | UniFET™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | FDL100 | MOSFET (Metal Oxide) | TO-264-3 | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 25 | N-Channel | 500 V | 100A (Tc) | 10V | 55mOhm @ 50A, 10V | 5V @ 250µA | 238 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 2500W (Tc) | ||||||||||||
 |
IXTY1R4N60P | - | |
2695 | 0.00000000 | IXYS | PolarHV™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IXTY1 | MOSFET (Metal Oxide) | TO-252AA | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 70 | N-Channel | 600 V | 1.4A (Tc) | 10V | 9Ohm @ 700mA, 10V | 5.5V @ 25µA | 5.2 nC @ 10 V | ±30V | 140 pF @ 25 V | - | 50W (Tc) | ||||||||||||||
 |
NX3008PBK/DG/B2215 | 0.0300 | |
37 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | download | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.21.0095 | 3,000 | |||||||||||||||||||||||||||||
 |
PMDPB760EN115 | 0.1600 | |
9 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | - | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.21.0075 | 3,000 | |||||||||||||||||||||||||||||
 |
IXFJ80N20Q | - | |
2902 | 0.00000000 | IXYS | - | Tube | Obsolete | IXFJ80 | - | 1 (Unlimited) | OBSOLETE | 0000.00.0000 | 30 | - | |||||||||||||||||||||||||||||
 |
RM35P30LDV | 0.1980 | |
8698 | 0.00000000 | Rectron USA | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252-2 | - | ROHS3 Compliant | 1 (Unlimited) | 2516-RM35P30LDVTR | 8541.10.0080 | 25,000 | P-Channel | 30 V | 35A (Tc) | 4.5V, 10V | 20mOhm @ 15A, 10V | 2.5V @ 250µA | ±20V | 1345 pF @ 15 V | - | 40W (Tc) | |||||||||||||||
 |
IRF9392PBF | - | |
4965 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Discontinued at SIC | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | IRF9392 | MOSFET (Metal Oxide) | 8-SO | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 95 | P-Channel | 30 V | 9.8A (Ta) | 10V, 20V | 12.1mOhm @ 7.8A, 20V | 2.4V @ 25µA | 14 nC @ 4.5 V | ±25V | 1270 pF @ 25 V | - | 2.5W (Ta) | ||||||||||||
 |
FCU3400N80Z | - | |
8340 | 0.00000000 | onsemi | SuperFET® II | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | FCU3400 | MOSFET (Metal Oxide) | I-PAK | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 1,800 | N-Channel | 800 V | 2A (Tc) | 10V | 3.4Ohm @ 1A, 10V | 4.5V @ 200µA | 9.6 nC @ 10 V | ±20V | 400 pF @ 100 V | - | 32W (Tc) | ||||||||||||
 |
TPH4R50ANH,L1Q | 2.7900 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH4R50 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 60A (Tc) | 10V | 4.5mOhm @ 30A, 10V | 4V @ 1mA | 58 nC @ 10 V | ±20V | 5200 pF @ 50 V | - | 1.6W (Ta), 78W (Tc) | |||||||||||||
 |
IRFBF20PBF | 2.4100 | |
996 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | IRFBF20 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | *IRFBF20PBF | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 1.7A (Tc) | 10V | 8Ohm @ 1A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 54W (Tc) | ||||||||||||
|
BUK7535-100A,127 | 0.4300 | |
8 | 0.00000000 | NXP USA Inc. | * | Tube | Active | BUK75 | - | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | |||||||||||||||||||||||||||||
 |
SSM6N39TU,LF | 0.4900 | |
7160 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6N39 | MOSFET (Metal Oxide) | 500mW | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 1.6A (Ta) | 119mOhm @ 1A, 4V | 1V @ 1mA | 7.5nC @ 4V | 260pF @ 10V | - | |||||||||||||||
 |
TSG65N068CE RVG | 25.7700 | |
2537 | 0.00000000 | Taiwan Semiconductor Corporation | * | Tape & Reel (TR) | Active | TSG65 | - | ROHS3 Compliant | 1 (Unlimited) | 3,000 | |||||||||||||||||||||||||||||||
|
BLF9G38-10GJ | - | |
5409 | 0.00000000 | Ampleon USA Inc. | - | Tape & Reel (TR) | Obsolete | 28 V | SOT-975C | 3.4GHz ~ 3.8GHz | LDMOS | SOT-975C | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0075 | 100 | - | 10W | - | - | ||||||||||||||||||||
 |
SH8K5TB1 | 0.4190 | |
1361 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | SH8K5 | MOSFET (Metal Oxide) | 2W | 8-SOP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | 2 N-Channel (Dual) | 30V | 3.5A | 83mOhm @ 3.5A, 10V | 2.5V @ 1mA | 3.5nC @ 5V | 140pF @ 10V | Logic Level Gate | ||||||||||||||
 |
UF3SC065030D8S | - | |
3394 | 0.00000000 | Qorvo | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 4-PowerTSFN | UF3SC065030 | SiCFET (Cascode SiCJFET) | 4-DFN (8x8) | download | 3 (168 Hours) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 18A (Tc) | 12V | 42mOhm @ 20A, 12V | 6V @ 10mA | 43 nC @ 12 V | ±25V | 1500 pF @ 100 V | - | 179W (Tc) | ||||||||||||||
|
IXFJ52N30Q | - | |
2329 | 0.00000000 | IXYS | - | Tube | Obsolete | IXFJ52 | - | 1 (Unlimited) | OBSOLETE | 0000.00.0000 | 30 | - | |||||||||||||||||||||||||||||
 |
BSP89 E6327 | - | |
8535 | 0.00000000 | Infineon Technologies | SIPMOS® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4 | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 240 V | 350mA (Ta) | 4.5V, 10V | 6Ohm @ 350mA, 10V | 1.8V @ 108µA | 6.4 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 1.8W (Ta) | |||||||||||||
 |
IXFH4N100Q | - | |
3313 | 0.00000000 | IXYS | HiPerFET™, Q Class | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IXFH4 | MOSFET (Metal Oxide) | TO-247AD (IXFH) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 1000 V | 4A (Tc) | 10V | 3Ohm @ 2A, 10V | 5V @ 1.5mA | 39 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 150W (Tc) | ||||||||||||
 |
IXTA60N20T | 5.1004 | |
6663 | 0.00000000 | IXYS | Trench | Tube | Active | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IXTA60 | MOSFET (Metal Oxide) | TO-263AA | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 200 V | 60A (Tc) | 10V | 40mOhm @ 30A, 10V | 5V @ 250µA | 73 nC @ 10 V | ±20V | 4530 pF @ 25 V | - | 500W (Tc) | ||||||||||||
 |
BUK9107-55ATE,118 | 1.0000 | |
2160 | 0.00000000 | NXP USA Inc. | TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB | MOSFET (Metal Oxide) | SOT-426 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 0000.00.0000 | 1 | N-Channel | 55 V | 75A (Tc) | 4.5V, 10V | 6.2mOhm @ 50A, 10V | 2V @ 1mA | 108 nC @ 5 V | ±15V | 5836 pF @ 25 V | Temperature Sensing Diode | 272W (Tc) | |||||||||||||
 |
IXTK110N20L2 | 39.1400 | |
6882 | 0.00000000 | IXYS | Linear L2™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | IXTK110 | MOSFET (Metal Oxide) | TO-264 (IXTK) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 25 | N-Channel | 200 V | 110A (Tc) | 10V | 24mOhm @ 55A, 10V | 4.5V @ 3mA | 500 nC @ 10 V | ±20V | 23000 pF @ 25 V | - | 960W (Tc) | ||||||||||||
 |
IXTH48N15 | - | |
4222 | 0.00000000 | IXYS | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IXTH48 | MOSFET (Metal Oxide) | TO-247 (IXTH) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 150 V | 48A (Tc) | 10V | 32mOhm @ 500mA, 10V | - | 140 nC @ 10 V | ±20V | 3200 pF @ 25 V | - | 180W (Tc) | ||||||||||||
|
IXTA10N60P | 4.1506 | |
5046 | 0.00000000 | IXYS | Polar | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | IXTA10 | MOSFET (Metal Oxide) | TO-263AA | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 10A (Tc) | 10V | 740mOhm @ 5A, 10V | 5.5V @ 250µA | 32 nC @ 10 V | ±30V | 1610 pF @ 25 V | - | 200W (Tc) | ||||||||||||
 |
NTNS3C68NZT5G | 0.0900 | |
269 | 0.00000000 | onsemi | * | Bulk | Active | download | Vendor Undefined | REACH Unaffected | 2156-NTNS3C68NZT5G-488 | 1 | |||||||||||||||||||||||||||||||
|
SSM6L40TU,LF | 0.4900 | |
62 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6L40 | MOSFET (Metal Oxide) | 500mW (Ta) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N and P-Channel | 30V | 1.6A (Ta), 1.4A (Ta) | 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V | 2.6V @ 1mA, 2V @ 1mA | 5.1nC @ 10V, 2.9nC @ 10V | 180pF @ 15V, 120pF @ 15V | Logic Level Gate, 4V Drive | |||||||||||||||
 |
BLL8H1214L-500U | - | |
5945 | 0.00000000 | Ampleon USA Inc. | - | Tray | Active | 100 V | Chassis Mount | SOT-539A | BLL8 | 1.2GHz ~ 1.4GHz | LDMOS | SOT539A | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0075 | 20 | Dual, Common Source | - | 150 mA | 500W | 17dB | - | 50 V | |||||||||||||||
|
FDN5632N | - | |
6899 | 0.00000000 | Fairchild Semiconductor | * | Bulk | Active | FDN5632 | - | - | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8542.39.0001 | 3,000 | - | ||||||||||||||||||||||||||
 |
SI4874BDY-T1-E3 | 1.4000 | |
10 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | SI4874 | MOSFET (Metal Oxide) | 8-SOIC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 12A (Ta) | 4.5V, 10V | 7mOhm @ 16A, 10V | 3V @ 250µA | 25 nC @ 4.5 V | ±20V | 3230 pF @ 15 V | - | 1.6W (Ta) | |||||||||||||
 |
CG2H80060D-GP4 | 110.5810 | |
6090 | 0.00000000 | Wolfspeed, Inc. | GaN | Tray | Active | 120 V | Die | CG2H80060 | 8GHz | HEMT | Die | download | 1 (Unlimited) | EAR99 | 8541.21.0040 | 10 | 14A | 60W | 12dB | - | 28 V |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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