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FETs, MOSFETs(56295)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Test |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRF510 | - |  |
4855 | 0.00000000 | Vishay Siliconix | - | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IRF510 | MOSFET (Metal Oxide) | TO-220AB | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | *IRF510 | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 100 V | 5.6A (Tc) | 10V | 540mOhm @ 3.4A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 43W (Tc) | |||||||||||
 |
BSP300L6327HUSA1 | - | |
1980 | 0.00000000 | Infineon Technologies | SIPMOS® | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 800 V | 190mA (Ta) | 10V | 20Ohm @ 190mA, 10V | 4V @ 1mA | ±20V | 230 pF @ 25 V | - | 1.8W (Ta) | |||||||||||||||
 |
TK39N60W,S1VF | 5.5100 | |
7989 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK39N60 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 38.8A (Ta) | 10V | 65mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 270W (Tc) | |||||||||||||
 |
STP4N150 | 6.4600 | |
2500 | 0.00000000 | STMicroelectronics | PowerMESH™ | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | STP4N150 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 497-5091-5 | EAR99 | 8541.29.0095 | 50 | N-Channel | 1500 V | 4A (Tc) | 10V | 7Ohm @ 2A, 10V | 5V @ 250µA | 50 nC @ 10 V | ±30V | 1300 pF @ 25 V | - | 160W (Tc) | |||||||||||
 |
NTB6N60T4 | - | |
7233 | 0.00000000 | onsemi | - | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | - | RoHS non-compliant | Vendor Undefined | 2156-NTB6N60T4-488 | 1 | N-Channel | 600 V | 6A (Tc) | 10V | 1.2Ohm @ 3A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 1670 pF @ 25 V | - | 142W (Tc) | |||||||||||||||
 |
IPB80N06S4L05ATMA2 | 0.9300 | |
1 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, OptiMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | PG-TO263-3-2 | download | Vendor Undefined | REACH Unaffected | 2156-IPB80N06S4L05ATMA2-448 | EAR99 | 0000.00.0000 | 323 | N-Channel | 60 V | 80A (Tc) | 4.5V, 10V | 5.1mOhm @ 80A, 10V | 2.2V @ 60µA | 110 nC @ 10 V | ±16V | 8180 pF @ 25 V | - | 107W (Tc) | |||||||||||||
|
2SB808F-SPA | 0.0600 | |
21 | 0.00000000 | Sanyo | * | Bulk | Active | 2SB808 | - | - | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.21.0075 | 1 | - | ||||||||||||||||||||||||||
 |
AOD4144_002 | - | |
2455 | 0.00000000 | Alpha & Omega Semiconductor Inc. | SDMOS™ | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | AOD41 | MOSFET (Metal Oxide) | TO-252 (DPAK) | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 13A (Ta), 55A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.4V @ 250µA | 28 nC @ 10 V | ±20V | 1430 pF @ 15 V | - | 2.3W (Ta), 50W (Tc) | |||||||||||||
 |
PJP18N20_T0_00001 | 1.0700 | |
5419 | 0.00000000 | Panjit International Inc. | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PJP18 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | Not Applicable | REACH Unaffected | 3757-PJP18N20_T0_00001 | EAR99 | 8541.29.0095 | 50 | N-Channel | 200 V | 18A (Tc) | 10V | 160mOhm @ 9A, 10V | 3V @ 250µA | 24 nC @ 10 V | ±20V | 1017 pF @ 25 V | - | 89W (Tc) | |||||||||||
 |
IXKP10N60C5M | - | |
5243 | 0.00000000 | IXYS | CoolMOS™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | IXKP10 | MOSFET (Metal Oxide) | TO-220ABFP | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 5.4A (Tc) | 10V | 385mOhm @ 5.2A, 10V | 3.5V @ 340µA | 22 nC @ 10 V | ±20V | 790 pF @ 100 V | - | - | |||||||||||||
|
UPA2350T1G-E4-A | 0.7200 | |
5 | 0.00000000 | Renesas Electronics America Inc | - | Bulk | Obsolete | Surface Mount | 4-XBGA, 4-FCBGA | UPA2350 | MOSFET (Metal Oxide) | 1.3W | 4-FlipChip | - | Not applicable | EAR99 | 8541.29.0095 | 5,000 | 2 N-Channel (Dual) | 20V | 6A | 35mOhm @ 3A, 4.5V | 1.5V @ 1mA | 8.6nC @ 4V | 542pF @ 10V | Logic Level Gate | |||||||||||||||||
|
MRF6VP3091NR1 | 111.2700 | |
480 | 0.00000000 | Freescale Semiconductor - NXP | - | Bulk | Obsolete | 115 V | Surface Mount | TO-270AB | 470MHz ~ 1.215GHz | LDMOS | TO-270 WB-4 | - | RoHS non-compliant | Vendor Undefined | 2156-MRF6VP3091NR1 | EAR99 | 8541.29.0075 | 1 | Dual, Common Source | 10µA | 450 mA | 90W | 22dB | - | 50 V | ||||||||||||||||
 |
BUK9Y59-60E,115 | - | |
7203 | 0.00000000 | NXP USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | MOSFET (Metal Oxide) | LFPAK56, Power-SO8 | download | 0000.00.0000 | 1 | N-Channel | 60 V | 16.7A (Tc) | 5V | 52mOhm @ 5A, 10V | 2.1V @ 1mA | 6.1 nC @ 5 V | ±10V | 715 pF @ 25 V | - | 37W (Tc) | |||||||||||||||||
 |
ZVN2535ASTZ | - | |
8071 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | E-Line-3 | MOSFET (Metal Oxide) | E-Line (TO-92 compatible) | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 2,000 | N-Channel | 350 V | 90mA (Ta) | 10V | 35Ohm @ 100mA, 10V | 3V @ 1mA | ±20V | 70 pF @ 25 V | - | 700mW (Ta) | |||||||||||||||
|
SSM14N956L,EFF | 1.3700 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 14-SMD, No Lead | SSM14 | MOSFET (Metal Oxide) | 1.33W (Ta) | TCSPED-302701 | - | ROHS3 Compliant | 1 (Unlimited) | 10,000 | 2 N-Channel | 12V | 20A (Ta) | 1.35mOhm @ 10A, 4.5V | 1.4V @ 1.57mA | 76nC @ 4V | - | - | |||||||||||||||||
 |
TPC8035-H(TE12L,QM | - | |
2642 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8035 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 18A (Ta) | 4.5V, 10V | 3.2mOhm @ 9A, 10V | 2.3V @ 1mA | 82 nC @ 10 V | ±20V | 7800 pF @ 10 V | - | 1W (Ta) | ||||||||||||||
 |
MGSF1N03LT1G | 0.4800 | |
6735 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MGSF1 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 1.6A (Ta) | 4.5V, 10V | 100mOhm @ 1.2A, 10V | 2.4V @ 250µA | ±20V | 140 pF @ 5 V | - | 420mW (Ta) | |||||||||||||
 |
TK560P60Y,RQ | 1.4700 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK560P60 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 7A (Tc) | 10V | 560mOhm @ 3.5A, 10V | 4V @ 240µA | 14.5 nC @ 10 V | ±30V | 380 pF @ 300 V | - | 60W (Tc) | |||||||||||||
 |
IPN80R3K3P7ATMA1 | 0.9600 | |
1990 | 0.00000000 | Infineon Technologies | CoolMOS™ P7 | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | IPN80R3 | MOSFET (Metal Oxide) | PG-SOT223 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 800 V | 1.9A (Tc) | 10V | 3.3Ohm @ 590mA, 10V | 3.5V @ 30µA | 5.8 nC @ 10 V | ±20V | 120 pF @ 500 V | - | 6.1W (Tc) | ||||||||||||
 |
BLL6H1214P2S-250Z | 525.0000 | |
8907 | 0.00000000 | Ampleon USA Inc. | - | Tray | Not For New Designs | 50 V | Module | BLL6 | 1.2GHz ~ 1.4GHz | LDMOS | Module | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 934068602117 | EAR99 | 8541.29.0095 | 2 | Dual | - | 200 mA | 53dBm | 27dB | - | 45 V | |||||||||||||||
 |
IRFD113 | 0.6300 | |
53 | 0.00000000 | Harris Corporation | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | MOSFET (Metal Oxide) | 4-HVMDIP | download | RoHS non-compliant | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 60 V | 800mA (Tc) | 10V | 800mOhm @ 800mA, 10V | 4V @ 250µA | 7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 1W (Tc) | |||||||||||||||
|
NX7002AK215 | - | |
3044 | 0.00000000 | NXP Semiconductors | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | - | 2156-NX7002AK215 | 1 | N-Channel | 60 V | 190mA (Ta), 300mA (Tc) | 5V, 10V | 4.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.43 nC @ 4.5 V | ±20V | 20 pF @ 10 V | - | 265mW (Ta), 1.33W (Tc) | |||||||||||||||||
|
TK380P60Y,RQ | 1.6900 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK380P60 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W (Tc) | |||||||||||||
 |
DMN3024LSS-13 | 0.6100 | |
2 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | DMN3024 | MOSFET (Metal Oxide) | 8-SO | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 6.4A (Ta) | 4.5V, 10V | 24mOhm @ 7A, 10V | 3V @ 250µA | 12.9 nC @ 10 V | ±20V | 608 pF @ 15 V | - | 1.6W (Ta) | ||||||||||||
 |
IXTH200N075T | - | |
6808 | 0.00000000 | IXYS | - | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | IXTH200 | MOSFET (Metal Oxide) | TO-247 (IXTH) | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 75 V | 200A (Tc) | 10V | 5mOhm @ 25A, 10V | 4V @ 250µA | 160 nC @ 10 V | ±20V | 6800 pF @ 25 V | - | 430W (Tc) | |||||||||||||
 |
SSM3J355R,LF | 0.4200 | |
51 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3J355 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.8V, 4.5V | 30.1mOhm @ 4A, 4.5V | 1V @ 1mA | 16.6 nC @ 4.5 V | ±10V | 1030 pF @ 10 V | - | 1W (Ta) | |||||||||||||
 |
ATF-58143-TR1G | - | |
1545 | 0.00000000 | Broadcom Limited | - | Tape & Reel (TR) | Obsolete | 5 V | SC-82A, SOT-343 | ATF-58143 | 2GHz | pHEMT FET | SOT-343 | - | 1 (Unlimited) | REACH Unaffected | 5A991G | 8541.21.0075 | 3,000 | 100mA | 30 mA | 19dBm | 16.5dB | 0.5dB | 3 V | ||||||||||||||||||
 |
IXFK44N80P | 21.2900 | |
6754 | 0.00000000 | IXYS | HiPerFET™, Polar | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | IXFK44 | MOSFET (Metal Oxide) | TO-264AA (IXFK) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 25 | N-Channel | 800 V | 44A (Tc) | 10V | 190mOhm @ 22A, 10V | 5V @ 8mA | 198 nC @ 10 V | ±30V | 12000 pF @ 25 V | - | 1040W (Tc) | ||||||||||||
 |
SSM6N44FU,LF | 0.3600 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N44 | MOSFET (Metal Oxide) | 200mW (Ta) | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 100mA (Ta) | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 8.5pF @ 3V | - | |||||||||||||||
 |
IXTP90N055T | - | |
3608 | 0.00000000 | IXYS | TrenchT2™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IXTP90 | MOSFET (Metal Oxide) | TO-220-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 55 V | 90A (Tc) | 10V | 8.8mOhm @ 25A, 10V | 4V @ 50µA | 61 nC @ 10 V | ±20V | 2500 pF @ 25 V | - | 176W (Tc) |
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Daily average RFQ Volume
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