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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Voltage - Test |
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P3M171K0G7 | 6.1000 | 7429 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | SiCFET (Silicon Carbide) | D2PAK-7 | download | ROHS3 Compliant | REACH Affected | 4237-P3M171K0G7 | EAR99 | 8541.29.0095 | 1 | N-Channel | 1700 V | 7A | 15V | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | +19V, -8V | - | 100W | |||||||||||||||||
P3M173K0T3 | 5.0800 | 8943 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-2 | SiCFET (Silicon Carbide) | TO-220-2L | download | ROHS3 Compliant | REACH Affected | 4237-P3M173K0T3 | EAR99 | 8541.29.0095 | 1 | N-Channel | 1700 V | 4A | 15V | 2.6Ohm @ 600mA, 15V | 2.2V @ 600µA (Typ) | +19V, -8V | - | 75W | |||||||||||||||||
P3M17040K4 | 35.8600 | 4762 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | REACH Affected | 4237-P3M17040K4 | 1 | N-Channel | 1700 V | 73A | 15V | 60mOhm @ 50A, 15V | 2.2V @ 50mA (Typ) | +19V, -8V | - | 536W | |||||||||||||||||||
P3M06040K3 | 12.1700 | 2030 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06040K3 | EAR99 | 8541.29.0095 | 1 | N-Channel | 650 V | 68A | 15V | 50mOhm @ 40A, 15V | 2.4V @ 7.5mA (Typ) | +20V, -8V | - | 254W | |||||||||||||||||
P3M12160K3 | 8.8300 | 8824 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M12160K3 | EAR99 | 8541.29.0095 | 1 | N-Channel | 1200 V | 19A | 15V | 192mOhm @ 10A, 15V | 2.4V @ 2.5mA (Typ) | +21V, -8V | - | 110W | |||||||||||||||||
P3M06060K3 | 10.3800 | 9755 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06060K3 | 1 | N-Channel | 650 V | 48A | 15V | 79mOhm @ 20A, 15V | 2.2V @ 20mA (Typ) | +20V, -8V | - | 188W | |||||||||||||||||||
P3M171K0F3 | 6.1000 | 2987 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220F-2 | SiCFET (Silicon Carbide) | TO-220F-2L | download | ROHS3 Compliant | REACH Affected | 4237-P3M171K0F3 | 1 | N-Channel | 1700 V | 5.5A | 15V | 1.4Ohm @ 2A, 15V | 2.2V @ 2mA (Typ) | +19V, -8V | - | 51W | |||||||||||||||||||
P3M06060K4 | 10.3800 | 7995 | 0.00000000 | PN Junction Semiconductor | P3M | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4L | download | ROHS3 Compliant | REACH Affected | 4237-P3M06060K4 | 1 | N-Channel | 650 V | 48A | 15V | 79mOhm @ 20A, 15V | 2.4V @ 5mA (Typ) | +20V, -8V | - | 188W | |||||||||||||||||||
P3M06300D8 | 4.9800 | 7160 | 0.00000000 | PN Junction Semiconductor | P3M | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | DFN8*8 | SiCFET (Silicon Carbide) | DFN8*8 | download | ROHS3 Compliant | REACH Affected | 4237-P3M06300D8TR | 1 | N-Channel | 650 V | 9A | 15V | 500mOhm @ 4.5A, 15V | 2.2V @ 5mA | +20V, -8V | - | 32W | |||||||||||||||||||
ART2K0FEGJ | 244.8000 | 80 | 0.00000000 | Ampleon USA Inc. | ART | Tape & Reel (TR) | Active | 200 V | Chassis Mount | SOT-539AN | 1MHz ~ 400MHz | LDMOS | SOT539AN | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0075 | 100 | Dual, Common Source | 1.4µA | 600 mA | 2000W | 28.9dB | - | 65 V | ||||||||||||||||||
UF4C120070K3S | 13.3200 | 96 | 0.00000000 | Qorvo | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Cascode SiCJFET) | TO-247-3 | download | ROHS3 Compliant | 1 (Unlimited) | 2312-UF4C120070K3S | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 27.5A (Tc) | 91mOhm @ 20A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1370 pF @ 800 V | - | 217W (Tc) | ||||||||||||||||
UF4SC120023K4S | 30.2800 | 106 | 0.00000000 | Qorvo | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Cascode SiCJFET) | TO-247-4 | download | ROHS3 Compliant | 1 (Unlimited) | 2312-UF4SC120023K4S | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 53A (Tc) | 12V | 29mOhm @ 40A, 12V | 6V @ 10mA | 37.8 nC @ 15 V | ±20V | 1430 pF @ 800 V | - | 385W (Tc) | |||||||||||||||
G60N10T | 1.5700 | 186 | 0.00000000 | Goford Semiconductor | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 60A (Tc) | 4.5V, 10V | 25mOhm @ 20A, 10V | 2.5V @ 250µA | 146 nC @ 10 V | ±20V | 3970 pF @ 50 V | - | 160W (Tc) | ||||||||||||||||
GC20N65F | 2.7000 | 79 | 0.00000000 | Goford Semiconductor | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F | download | 3 (168 Hours) | REACH Unaffected | EAR99 | 8541.29.0095 | 100 | N-Channel | 650 V | 20A (Tc) | 10V | 170mOhm @ 10A, 10V | 4.5V @ 250µA | 39 nC @ 10 V | ±30V | 1724 pF @ 100 V | - | 34W (Tc) | ||||||||||||||||
IRLC3615F | - | 7065 | 0.00000000 | Infineon Technologies | * | Bulk | Obsolete | - | REACH Unaffected | 448-IRLC3615F | OBSOLETE | 1 | |||||||||||||||||||||||||||||||||
A5G35S004N-3400 | 105.4700 | 7639 | 0.00000000 | NXP USA Inc. | - | Bulk | Active | 125 V | Surface Mount | 6-LDFN Exposed Pad | 3.3GHz ~ 4.3GHz | - | 6-PDFN (4x4.5) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | - | - | 12 mA | 24.5dBm | 16.9dB | - | 48 V | ||||||||||||||||||
A3G26D055N-2600 | 315.0000 | 3192 | 0.00000000 | NXP USA Inc. | - | Bulk | Active | 125 V | Surface Mount | 6-LDFN Exposed Pad | 100MHz ~ 2.69GHz | - | 6-PDFN (7x6.5) | download | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0075 | 1 | - | - | 40 mA | 8W | 13.9dB | - | 48 V | |||||||||||||||||||
A5G35H110N-3400 | 315.0000 | 7093 | 0.00000000 | NXP USA Inc. | - | Bulk | Active | 125 V | Surface Mount | 6-LDFN Exposed Pad | 3.3GHz ~ 3.7GHz | - | 6-PDFN (7x6.5) | download | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0075 | 1 | - | - | 70 mA | 15.1W | 15.3dB | - | 48 V | |||||||||||||||||||
SI2318DS-T1-BE3 | 0.5300 | 20 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | download | 1 (Unlimited) | 742-SI2318DS-T1-BE3TR | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 40 V | 3A (Ta) | 4.5V, 10V | 45mOhm @ 3.9A, 10V | 3V @ 250µA | 15 nC @ 10 V | ±20V | 540 pF @ 20 V | - | 750mW (Ta) | ||||||||||||||||
IRFR9120PBF-BE3 | 0.8080 | 2691 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IRFR9120 | MOSFET (Metal Oxide) | TO-252AA | download | 742-IRFR9120PBF-BE3TR | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 100 V | 5.6A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | ||||||||||||||||
SQJ459EP-T2_BE3 | 1.2800 | 4182 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | 1 (Unlimited) | 742-SQJ459EP-T2_BE3TR | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 60 V | 52A (Tc) | 4.5V, 10V | 18mOhm @ 3.5A, 10V | 2.5V @ 250µA | 108 nC @ 10 V | ±20V | 4586 pF @ 30 V | - | 83W (Tc) | ||||||||||||||||
SIDR610DP-T1-RE3 | 2.5200 | 5413 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | MOSFET (Metal Oxide) | PowerPAK® SO-8DC | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 200 V | 8.9A (Ta), 39.6A (Tc) | 7.5V, 10V | 31.9mOhm @ 10A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 1380 pF @ 100 V | - | 6.25W (Ta), 125W (Tc) | |||||||||||||||||
SIHB28N60EF-T1-GE3 | 6.2600 | 790 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 800 | N-Channel | 600 V | 28A (Tc) | 10V | 123mOhm @ 14A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 2714 pF @ 100 V | - | 250W (Tc) | |||||||||||||||||
SQJB68EP-T1_BE3 | 0.8900 | 7342 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | SQJB68 | MOSFET (Metal Oxide) | 27W (Tc) | PowerPAK® SO-8 Dual | download | 1 (Unlimited) | 742-SQJB68EP-T1_BE3TR | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 100V | 11A (Tc) | 92mOhm @ 4A, 10V | 2.5V @ 250µA | 8nC @ 10V | 280pF @ 25V | - | |||||||||||||||||
SI6423DQ-T1-BE3 | 1.7700 | 2 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | MOSFET (Metal Oxide) | 8-TSSOP | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 12 V | 8.2A (Ta) | 1.8V, 4.5V | 8.5mOhm @ 9.5A, 4.5V | 800mV @ 400µA | 110 nC @ 5 V | ±8V | - | 1.05W (Ta) | ||||||||||||||||||
SIHFR9310TRL-GE3 | 0.8200 | 4 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252AA | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 400 V | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 50W (Tc) | |||||||||||||||||
SIHP25N50E-BE3 | 3.2100 | 3 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 26A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 86 nC @ 10 V | ±30V | 1980 pF @ 100 V | - | 250W (Tc) | |||||||||||||||||
SQJB46ELP-T1_BE3 | 1.2200 | 1432 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® SO-8 Dual | SQJB46 | MOSFET (Metal Oxide) | 34W (Tc) | PowerPAK® SO-8 Dual | download | 1 (Unlimited) | 742-SQJB46ELP-T1_BE3TR | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 40V | 30A (Tc) | 8mOhm @ 8A, 10V | 2.2V @ 250µA | 40nC @ 10V | 2100pF @ 25V | - | |||||||||||||||||
SI2300DS-T1-BE3 | 0.4700 | 9086 | 0.00000000 | Vishay Siliconix | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | SOT-23-3 (TO-236) | download | 1 (Unlimited) | 742-SI2300DS-T1-BE3TR | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 3.1A (Ta), 3.6A (Tc) | 2.5V, 4.5V | 68mOhm @ 2.9A, 4.5V | 1.5V @ 250µA | 10 nC @ 10 V | ±12V | 320 pF @ 15 V | - | 1.1W (Ta), 1.7W (Tc) | ||||||||||||||||
SIHL620S-GE3 | 0.9100 | 972 | 0.00000000 | Vishay Siliconix | - | Tube | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 200 V | 5.2A (Tc) | 4V, 10V | 800mOhm @ 3.1A, 10V | 2V @ 250µA | 16 nC @ 5 V | ±10V | 360 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) |
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