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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
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DMN2400UFB-7 | 0.3300 | 1 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 3-UFDFN | DMN2400 | MOSFET (Metal Oxide) | X1-DFN1006-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 750mA (Ta) | 1.8V, 4.5V | 550mOhm @ 600mA, 4.5V | 900mV @ 250µA | 0.5 nC @ 4.5 V | ±12V | 36 pF @ 16 V | - | 470mW (Ta) | ||||||
RF1S540SM | 2.0600 | 7689 | 0.00000000 | Harris Corporation | - | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | TO-263AB | download | RoHS non-compliant | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.29.0095 | 3 | N-Channel | 100 V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1450 pF @ 25 V | - | 150W (Tc) | |||||||
PMDXB950UPEL/S500Z | 0.0800 | 5 | 0.00000000 | Nexperia USA Inc. | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFDFN Exposed Pad | PMDXB950 | MOSFET (Metal Oxide) | 265mW (Ta), 4.025W (Tc) | DFN1010B-6 | download | ROHS3 Compliant | REACH Unaffected | 2156-PMDXB950UPEL/S500Z | EAR99 | 8541.29.0095 | 1 | 2 P-Channel (Dual) | 20V | 500mA (Ta) | 1.4Ohm @ 500mA, 4.5V | 950mV @ 250µA | 2.1nC @ 4.5V | 43pF @ 10V | - | ||||||||
5LN01SP-AC | - | 9066 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Through Hole | SC-72 | 5LN01 | MOSFET (Metal Oxide) | 3-SPA | - | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 2,500 | N-Channel | 50 V | 100mA (Ta) | 1.5V, 4V | 7.8Ohm @ 50mA, 4V | 1.3V @ 100µA | 1.57 nC @ 10 V | ±10V | 6.6 pF @ 10 V | - | 250mW (Ta) | |||||||
AON4407L_002 | - | 1478 | 0.00000000 | Alpha & Omega Semiconductor Inc. | - | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | AON44 | MOSFET (Metal Oxide) | 8-DFN (3x2) | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | P-Channel | 12 V | 9A (Ta) | 1.5V, 4.5V | 20mOhm @ 9A, 4.5V | 850mV @ 250µA | 23 nC @ 4.5 V | ±8V | 2100 pF @ 6 V | - | 2.5W (Ta) | |||||||
SI3424CDV-T1-GE3 | 0.5400 | 6 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | SI3424 | MOSFET (Metal Oxide) | 6-TSOP | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 8A (Tc) | 4.5V, 10V | 26mOhm @ 7.2A, 10V | 2.5V @ 250µA | 12.5 nC @ 10 V | ±20V | 405 pF @ 15 V | - | 3.6W (Tc) | |||||||
IPZ40N04S53R9ATMA1 | 0.4255 | 4943 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, OptiMOS™-5 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | IPZ40N | MOSFET (Metal Oxide) | PG-TSDSON-8-33 | download | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 89A (Tj) | 7V, 10V | 3.9mOhm @ 20A, 10V | 3.4V @ 21µA | 25 nC @ 10 V | ±20V | 1737 pF @ 25 V | - | 58W (Tc) | |||||||
SUP90220E-GE3 | 2.6800 | 2337 | 0.00000000 | Vishay Siliconix | ThunderFET® | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | SUP90220 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 500 | N-Channel | 200 V | 64A (Tc) | 7.5V, 10V | 4V @ 250µA | 48 nC @ 10 V | ±20V | 1950 pF @ 100 V | - | 230W (Tc) | ||||||||
SQJQ402E-T1_GE3 | 2.8400 | 1 | 0.00000000 | Vishay Siliconix | Automotive, AEC-Q101, TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | SQJQ402 | MOSFET (Metal Oxide) | PowerPAK® 8 x 8 | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 200A (Tc) | 4.5V, 10V | 1.7mOhm @ 20A, 10V | 2.5V @ 250µA | 260 nC @ 10 V | ±20V | 13500 pF @ 20 V | - | 150W (Tc) | ||||||||
NTLLD4951NFTWG | - | 1522 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | NTLLD4951 | MOSFET (Metal Oxide) | 800mW, 810mW | 8-WDFN (3x3) | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) Asymmetrical | 30V | 5.5A, 6.3A | 17.4mOhm @ 9A, 10V | 2.2V @ 250µA | 12nC @ 10V | 605pF @ 15V | - | ||||||||
G3R45MT17K | 33.0700 | 900 | 0.00000000 | GeneSiC Semiconductor | G3R™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | G3R45 | SiCFET (Silicon Carbide) | TO-247-4 | download | RoHS Compliant | 1 (Unlimited) | 1242-G3R45MT17K | EAR99 | 8541.29.0095 | 30 | N-Channel | 1700 V | 61A (Tc) | 15V | 58mOhm @ 40A, 15V | 2.7V @ 8mA | 182 nC @ 15 V | ±15V | 4523 pF @ 1000 V | - | 438W (Tc) | ||||||
SSFP4960 | 0.9100 | 1662 | 0.00000000 | Good-Ark Semiconductor | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-PPAK (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 6,000 | N-Channel | 40 V | 100A (Tc) | 4.5V, 10V | 2.8mOhm @ 25A, 10V | 2.5V @ 250µA | 80 nC @ 4.5 V | ±20V | 7800 pF @ 25 V | - | 135W (Tc) | |||||||
GSFP0449 | 0.6200 | 7862 | 0.00000000 | Good-Ark Semiconductor | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-PPAK (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 6,000 | P-Channel | 40 V | 50A (Tc) | 4.5V, 10V | 17mOhm @ 15A, 10V | 2.5V @ 250µA | 56 nC @ 10 V | ±20V | 3100 pF @ 20 V | - | 82W (Tc) | |||||||
GSFU9504 | 2.8300 | 1 | 0.00000000 | Good-Ark Semiconductor | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 4786-GSFU9504 | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 950 V | 5A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 3.9V @ 250µA | 14.9 nC @ 10 V | ±30V | 878 pF @ 50 V | - | 31W (Tc) | ||||||
GSGA6R015 | 5.0600 | 882 | 0.00000000 | Good-Ark Semiconductor | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 4786-GSGA6R015 | EAR99 | 8541.29.0095 | 30 | N-Channel | 150 V | 175A (Tc) | 10V | - | 3.9V @ 250µA | 81 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 500W (Ta) | ||||||
GSFH9506 | 2.8300 | 1 | 0.00000000 | Good-Ark Semiconductor | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | 4786-GSFH9506 | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 950 V | 5A (Tj) | 10V | 1.2Ohm @ 2A, 10V | 3.9V @ 250µA | 14.9 nC @ 10 V | ±30V | 878 pF @ 50 V | - | 83W (Tj) | ||||||
GSFK06002 | 0.3500 | 5 | 0.00000000 | Good-Ark Semiconductor | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | MOSFET (Metal Oxide) | 900mW (Ta) | SOT-363 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 45,000 | 2 N-Channel | 50V | 300mA (Ta) | 2Ohm @ 300mA, 10V | 1.4V @ 250µA | 580nC @ 4.5V | 12pF @ 30V | Standard | |||||||||
MSJP09N65A-BP | 1.6300 | 1865 | 0.00000000 | Micro Commercial Co | - | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB (H) | download | 1 (Unlimited) | 353-MSJP09N65A-BP | 5,000 | N-Channel | 650 V | 9A (Tc) | 10V | 960mOhm @ 1.5A, 10V | 4V @ 250µA | 10.6 nC @ 10 V | ±30V | 383 pF @ 30 V | - | 113W (Tj) | ||||||||||
AOD4184L | - | 1708 | 0.00000000 | Alpha & Omega Semiconductor Inc. | - | Bulk | Last Time Buy | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252 (DPAK) | - | 785-AOD4184L | EAR99 | 8541.29.0095 | 1 | N-Channel | 40 V | 12A (Ta), 50A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.6V @ 250µA | 33 nC @ 10 V | ±20V | 1800 pF @ 20 V | - | 2.3W (Ta), 50W (Tc) | |||||||||
APT10050LVR | - | 7914 | 0.00000000 | Microchip Technology | POWER MOS V® | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | MOSFET (Metal Oxide) | TO-264 (L) | - | 150-APT10050LVR | 1 | N-Channel | 1000 V | 21A (Tc) | 10V | 500mOhm @ 500mA, 10V | 4V @ 1mA | 500 nC @ 10 V | ±30V | 7900 pF @ 25 V | - | 520W (Tc) | |||||||||||
FQB34P10TM-F085C | - | 4688 | 0.00000000 | onsemi | Automotive, AEC-Q101 | Bulk | Last Time Buy | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D²PAK-3 (TO-263-3) | - | 488-FQB34P10TM-F085C | EAR99 | 8541.29.0095 | 1 | P-Channel | 100 V | 33.5A (Tc) | 10V | 60mOhm @ 16.75A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±25V | 2910 pF @ 25 V | - | 3.75W (Ta), 155W (Tc) | |||||||||
ISZ113N10NM5LFATMA1 | 1.9900 | 3486 | 0.00000000 | Infineon Technologies | OptiMOS™ 5 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | PG-TSDSON-8 FL | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 10A (Ta), 63A (Tc) | 10V | 11.3mOhm @ 20A, 10V | 3.9V @ 36µA | 29 nC @ 10 V | ±20V | 2300 pF @ 50 V | - | 2.5W (Ta), 100W (Tc) | ||||||||
SISS4410DN-T1-GE3 | 0.8000 | 6235 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | MOSFET (Metal Oxide) | PowerPAK® 1212-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 14A (Ta), 36A (Tc) | 7.5V, 10V | 9mOhm @ 10A, 10V | 2.4V @ 250µA | 18 nC @ 10 V | +20V, -16V | 850 pF @ 20 V | - | 3.2W (Ta), 19.8W (Tc) | ||||||||
SISD5300DN-T1-GE3 | 1.6100 | 8063 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-F | MOSFET (Metal Oxide) | PowerPAK® 1212-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 62A (Ta), 198A (Tc) | 4.5V, 10V | 0.87mOhm @ 15A, 10V | 2V @ 250µA | 36.2 nC @ 10 V | +16V, -12V | 5030 pF @ 15 V | - | 5.4W (Ta), 57W (Tc) | ||||||||
SIJ4819DP-T1-GE3 | 2.2100 | 50 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 80 V | 11.5A (Ta), 44.4A (Tc) | 4.5V, 10V | 20.7mOhm @ 10A, 10V | 2.6V @ 250µA | 65 nC @ 10 V | ±20V | 3420 pF @ 40 V | - | 5W (Ta), 73.5W (Tc) | ||||||||
SIHF074N65E-GE3 | 7.5700 | 9394 | 0.00000000 | Vishay Siliconix | E | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220 Full Pack | download | ROHS3 Compliant | 1 (Unlimited) | 742-SIHF074N65E-GE3 | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 650 V | 14A (Tc) | 10V | 79mOhm @ 15A, 10V | 5V @ 250µA | 80 nC @ 10 V | ±30V | 2904 pF @ 100 V | - | 39W (Tc) | |||||||
SIJ4106DP-T1-GE3 | 1.6900 | 1999 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | MOSFET (Metal Oxide) | PowerPAK® SO-8 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 100 V | 15.8A (Ta), 59A (Tc) | 7.5V, 10V | 8.3mOhm @ 15A, 10V | 3.8V @ 250µA | 64 nC @ 10 V | ±20V | 3610 pF @ 50 V | - | 5W (Ta), 69.4W (Tc) | ||||||||
TW060Z120C,S1F | 17.8200 | 7048 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4L(X) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 36A (Tc) | 18V | 82mOhm @ 18A, 18V | 5V @ 4.2mA | 46 nC @ 18 V | +25V, -10V | 1530 pF @ 800 V | - | 170W (Tc) | ||||||||
TW107Z65C,S1F | 8.7500 | 110 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4L(X) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 20A (Tc) | 18V | 152mOhm @ 10A, 18V | 5V @ 1.2mA | 21 nC @ 18 V | +25V, -10V | 600 pF @ 400 V | - | 76W (Tc) | ||||||||
G300P06D5 | 0.2390 | 25 | 0.00000000 | Goford Semiconductor | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-DFN (4.9x5.75) | download | RoHS Compliant | 3 (168 Hours) | REACH Unaffected | 4822-G300P06D5TR | EAR99 | 8541.29.0000 | 5,000 | P-Channel | 40A (Tc) | 10V | 30mOhm @ 10A, 10V | 3V @ 250µA | ±20V | 2705 pF @ 30 V | - | 50W (Tc) |
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