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Single FETs, MOSFETs(44971)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDPF15N65 | - |  |
2828 | 0.00000000 | Fairchild Semiconductor | UniFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 650 V | 15A (Tc) | 10V | 440mOhm @ 7.5A, 10V | 5V @ 250µA | 63 nC @ 10 V | ±30V | 3095 pF @ 25 V | - | 38.5W (Tc) | ||||||
 |
FCPF4300N80Z | 1.0600 | |
931 | 0.00000000 | Fairchild Semiconductor | SuperFET® II | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8542.39.0001 | 284 | N-Channel | 800 V | 1.6A (Tc) | 10V | 4.3Ohm @ 800mA, 10V | 4.5V @ 160µA | 8.8 nC @ 10 V | ±20V | 355 pF @ 100 V | - | 19.2W (Tc) | ||||||
 |
2SK3705 | - | |
7372 | 0.00000000 | Sanyo | * | Bulk | Active | download | EAR99 | 8541.29.0095 | 1 | ||||||||||||||||||||||
 |
FCPF2250N80Z | 1.5100 | |
1 | 0.00000000 | Fairchild Semiconductor | SuperFET® II | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8542.39.0001 | 216 | N-Channel | 800 V | 2.6A (Tc) | 10V | 2.25Ohm @ 1.3A, 10V | 4.5V @ 260µA | 14 nC @ 10 V | ±20V | 585 pF @ 100 V | - | 21.9W (Tc) | ||||||
 |
IRF840RU | - | |
5093 | 0.00000000 | Harris Corporation | * | Bulk | Active | - | 0000.00.0000 | 150 | |||||||||||||||||||||||
|
FDMC2610 | 1.0000 | |
1155 | 0.00000000 | Fairchild Semiconductor | UniFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-MLP (3.3x3.3) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 200 V | 2.2A (Ta), 9.5A (Tc) | 6V, 10V | 200mOhm @ 2.2A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 960 pF @ 100 V | - | 2.1W (Ta), 42W (Tc) | ||||||
 |
FQD7N20LTM | - | |
2891 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | TO-252, (D-Pak) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 200 V | 5.5A (Tc) | 5V, 10V | 750mOhm @ 2.75A, 10V | 2V @ 250µA | 9 nC @ 5 V | ±20V | 500 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | ||||||
|
FCP170N60 | 3.5600 | |
1 | 0.00000000 | Fairchild Semiconductor | SuperFET® II | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220-3 | download | EAR99 | 8542.39.0001 | 92 | N-Channel | 600 V | 22A (Tc) | 10V | 170mOhm @ 11A, 10V | 3.5V @ 250µA | 55 nC @ 10 V | ±20V | 2860 pF @ 380 V | - | 227W (Tc) | ||||||
 |
FDMS8025S | 0.5800 | |
171 | 0.00000000 | Fairchild Semiconductor | PowerTrench®, SyncFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-PQFN (5x6) | download | EAR99 | 8541.29.0095 | 563 | N-Channel | 30 V | 24A (Ta), 49A (Tc) | 4.5V, 10V | 2.8mOhm @ 24A, 10V | 3V @ 1mA | 47 nC @ 10 V | ±20V | 3000 pF @ 15 V | - | 2.5W (Ta), 50W (Tc) | ||||||
|
PSMN1R2-30YLC,115 | - | |
4700 | 0.00000000 | NXP USA Inc. | * | Bulk | Active | PSMN1 | download | ROHS3 Compliant | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | |||||||||||||||||||
 |
IPD50N03S2-07 | - | |
2722 | 0.00000000 | Infineon Technologies | OptiMOS™ | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD50 | MOSFET (Metal Oxide) | PG-TO252-3-1 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 30 V | 50A (Tc) | 10V | 7.3mOhm @ 50A, 10V | 4V @ 85µA | 68 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 136W (Tc) | |||||
 |
FDA38N30 | - | |
4934 | 0.00000000 | Fairchild Semiconductor | UniFET™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | MOSFET (Metal Oxide) | TO-3PN | download | 0000.00.0000 | 1 | N-Channel | 300 V | 38A (Tc) | 10V | 85mOhm @ 19A, 10V | 5V @ 250µA | 60 nC @ 10 V | ±30V | 2600 pF @ 25 V | - | 312W (Tc) | |||||||
 |
PSMN6R4-30MLD,115 | - | |
4077 | 0.00000000 | Nexperia USA Inc. | * | Bulk | Active | download | 0000.00.0000 | 1 | |||||||||||||||||||||||
|
IPP062NE7N3G | 1.0000 | |
3188 | 0.00000000 | Infineon Technologies | OptiMOS™ 3 | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | PG-TO220-3-1 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 75 V | 80A (Tc) | 10V | 6.2mOhm @ 73A, 10V | 3.8V @ 70µA | 55 nC @ 10 V | ±20V | 3840 pF @ 37.5 V | - | 136W (Tc) | ||||||
|
CMS46N03V8-HF | - | |
8661 | 0.00000000 | Comchip Technology | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerWDFN | CMS46 | MOSFET (Metal Oxide) | 8-PDFN (SPR-PAK ) (3.3x3.3) | download | RoHS Compliant | 1 (Unlimited) | 641-CMS46N03V8-HFTR | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 46A (Tc) | 9mOhm @ 15A, 10V | 2.5V @ 250µA | 12.8 nC @ 4.5 V | ±20V | 1317 pF @ 15 V | - | 1.67W (Ta), 29W (Tc) | |||
|
CMS75P06CT-HF | - | |
9017 | 0.00000000 | Comchip Technology | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | CMS75 | MOSFET (Metal Oxide) | TO-220AB | download | RoHS Compliant | 1 (Unlimited) | 641-CMS75P06CT-HFTR | EAR99 | 8541.29.0095 | 50 | P-Channel | 60 V | 75A (Tc) | 9.5mOhm @ 30A, 10V | 2.5V @ 250µA | 141 nC @ 10 V | ±20V | 8620 pF @ 25 V | - | 2W (Ta), 183W (Tc) | |||
|
FCPF380N60-F154 | 1.5282 | |
1166 | 0.00000000 | onsemi | SuperFET® II | Tube | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | FCPF380 | MOSFET (Metal Oxide) | TO-220F-3 | - | ROHS3 Compliant | Not Applicable | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 10.2A (Tj) | 380mOhm @ 5A, 10V | 3.5V @ 250µA | 40 nC @ 10 V | ±20V | 1665 pF @ 25 V | - | 31W (Tc) | |||
|
FCPF190N60E-F154 | 2.1745 | |
9960 | 0.00000000 | onsemi | SuperFET® II | Tube | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | FCPF190 | MOSFET (Metal Oxide) | TO-220F-3 | - | ROHS3 Compliant | Not Applicable | REACH Unaffected | 488-FCPF190N60E-F154 | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 600 V | 20.6A (Tj) | 190mOhm @ 10A, 10V | 3.5V @ 250µA | 82 nC @ 10 V | ±20V | 3175 pF @ 25 V | - | 39W (Tc) | ||
 |
IPD90P03P404ATMA2 | 2.7500 | |
11 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, OptiMOS®-P2 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD90 | MOSFET (Metal Oxide) | PG-TO252-3-11 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 30 V | 90A (Tc) | 4.5mOhm @ 90A, 10V | 4V @ 253µA | 130 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 137W (Tc) | |||
 |
IPW60R199CP | - | |
3900 | 0.00000000 | Infineon Technologies | CoolMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | PG-TO247-3-21 | download | 0000.00.0000 | 1 | N-Channel | 600 V | 16A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43 nC @ 10 V | ±20V | 1520 pF @ 100 V | - | 139W (Tc) | |||||||
 |
IRFU7440PBF | 0.7300 | |
108 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | IPAK (TO-251AA) | download | EAR99 | 8542.39.0001 | 409 | N-Channel | 40 V | 90A (Tc) | 6V, 10V | 2.4mOhm @ 90A, 10V | 3.9V @ 100µA | 134 nC @ 10 V | ±20V | 4610 pF @ 25 V | - | 140W (Tc) | ||||||
 |
FDMS86152 | 2.6400 | |
1 | 0.00000000 | Fairchild Semiconductor | PowerTrench® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-PQFN (5x6) | download | EAR99 | 8542.39.0001 | 114 | N-Channel | 100 V | 14A (Ta), 45A (Tc) | 6V, 10V | 6mOhm @ 14A, 10V | 4V @ 250µA | 50 nC @ 10 V | ±20V | 3370 pF @ 50 V | - | 2.7W (Ta), 125W (Tc) | ||||||
 |
TK110A65Z,S4X | 4.2300 | |
51 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK110A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 45W (Tc) | |||
 |
SIHP6N80AE-GE3 | 1.6900 | |
971 | 0.00000000 | Vishay Siliconix | E | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | SIHP6 | MOSFET (Metal Oxide) | TO-220AB | download | 1 (Unlimited) | 742-SIHP6N80AE-GE3 | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 5A (Tc) | 950mOhm @ 2A, 10V | 4V @ 250µA | 22.5 nC @ 10 V | ±30V | 422 pF @ 100 V | - | 62.5W (Tc) | ||||
 |
RS1G201ATTB1 | 2.8600 | |
4 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | RS1G | MOSFET (Metal Oxide) | 8-HSOP | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 40 V | 20A (Ta), 78A (Tc) | 5.2mOhm @ 20A, 10V | 2.5V @ 1mA | 130 nC @ 10 V | ±20V | 6890 pF @ 20 V | - | 3W (Ta), 40W (Tc) | |||
|
FQPF6N80T | 1.1600 | |
5 | 0.00000000 | Fairchild Semiconductor | QFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220F-3 | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 800 V | 3.3A (Tc) | 10V | 1.95Ohm @ 1.65A, 10V | 5V @ 250µA | 31 nC @ 10 V | ±30V | 1500 pF @ 25 V | - | 51W (Tc) | ||||||
 |
FCH25N60N | 3.7500 | |
7 | 0.00000000 | Fairchild Semiconductor | SupreMOS™ | Bulk | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | MOSFET (Metal Oxide) | TO-247 | download | EAR99 | 8542.39.0001 | 80 | N-Channel | 600 V | 25A (Tc) | 10V | 126mOhm @ 12.5A, 10V | 4V @ 250µA | 74 nC @ 10 V | ±30V | 3352 pF @ 100 V | - | 216W (Tc) | ||||||
 |
BUK7Y7R2-60EX | - | |
2919 | 0.00000000 | NXP USA Inc. | - | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | SC-100, SOT-669 | MOSFET (Metal Oxide) | LFPAK56, Power-SO8 | download | 0000.00.0000 | 1 | N-Channel | 60 V | - | 10V | - | - | ±20V | - | 167W (Tc) | |||||||||
 |
PMCM6501VPEZ | 0.2000 | |
7 | 0.00000000 | NXP Semiconductors | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFBGA, WLCSP | MOSFET (Metal Oxide) | 6-WLCSP (1.48x0.98) | download | EAR99 | 8541.29.0095 | 1,528 | P-Channel | 12 V | 6.2A (Ta) | 1.8V, 4.5V | 25mOhm @ 3A, 4.5V | 900mV @ 250µA | 29.4 nC @ 4.5 V | ±8V | 1400 pF @ 6 V | - | 556mW (Ta), 12.5W (Tc) | ||||||
|
IRFR7440TRPBF | - | |
2155 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Surface Mount | 176-LQFP | MOSFET (Metal Oxide) | 176-LQFP (24x24) | download | EAR99 | 8542.39.0001 | 1 | N-Channel | 40 V | 90A (Tc) | 6V, 10V | 2.4mOhm @ 90A, 10V | 3.9V @ 100µA | 134 nC @ 10 V | ±20V | 4610 pF @ 25 V | - | 140W (Tc) |
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Daily average RFQ Volume
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