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Single FETs, MOSFETs(44971)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
NTMD4184PFR2G | - |  |
4194 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | NTMD4184 | MOSFET (Metal Oxide) | 8-SOIC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 2,500 | P-Channel | 30 V | 2.3A (Ta) | 4.5V, 10V | 95mOhm @ 3A, 10V | 3V @ 250µA | 4.2 nC @ 4.5 V | ±20V | 360 pF @ 10 V | Schottky Diode (Isolated) | 770mW (Ta) | ||
 |
GPI65008DF56 | 4.0000 | |
53 | 0.00000000 | GaNPower | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | Die | GaNFET (Gallium Nitride) | Die | download | Not applicable | Vendor Undefined | Vendor Undefined | 4025-GPI65008DF56TR | EAR99 | 8541.29.0095 | 1 | N-Channel | 650 V | 8A | 6V | 1.4V @ 3.5mA | 2.1 nC @ 6 V | +7.5V, -12V | 63 pF @ 400 V | - | - | |||
 |
IXFV96N15PS | - | |
4344 | 0.00000000 | IXYS | PolarHT™ HiPerFET™ | Box | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | PLUS-220SMD | IXFV96 | MOSFET (Metal Oxide) | PLUS-220SMD | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 150 V | 96A (Tc) | 10V | 24mOhm @ 500mA, 10V | 5V @ 4mA | 110 nC @ 10 V | ±20V | 3500 pF @ 25 V | - | 480W (Tc) | |||
 |
STW10N105K5 | 4.6500 | |
2143 | 0.00000000 | STMicroelectronics | MDmesh K5 | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | STW10 | MOSFET (Metal Oxide) | TO-247-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 1050 V | 6A (Tc) | 10V | 1.3Ohm @ 3A, 10V | 5V @ 100µA | 21.5 nC @ 10 V | 30V | 545 pF @ 100 V | - | 130W (Tc) | ||
 |
AOTF8T50P | - | |
8162 | 0.00000000 | Alpha & Omega Semiconductor Inc. | - | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | AOTF8 | MOSFET (Metal Oxide) | TO-220F | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 500 V | 8A (Tc) | 10V | 810mOhm @ 4A, 10V | 5V @ 250µA | 19 nC @ 10 V | ±30V | 905 pF @ 100 V | - | 38W (Tc) | ||
 |
RSD220N06TL | 0.7569 | |
1168 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Not For New Designs | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | RSD220 | MOSFET (Metal Oxide) | CPT3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 60 V | 22A (Ta) | 4V, 10V | - | - | ±20V | - | 20W (Ta) | ||||
 |
AOT16N50 | 1.0079 | |
9369 | 0.00000000 | Alpha & Omega Semiconductor Inc. | - | Tube | Not For New Designs | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | AOT16 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 500 V | 16A (Tc) | 10V | 370mOhm @ 8A, 10V | 4.5V @ 250µA | 51 nC @ 10 V | ±30V | 2297 pF @ 25 V | - | 278W (Tc) | ||
 |
CSD17527Q5A | 1.1700 | |
13 | 0.00000000 | Texas Instruments | NexFET™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | CSD17527 | MOSFET (Metal Oxide) | 8-VSONP (5x6) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 65A (Tc) | 4.5V, 10V | 10.8mOhm @ 11A, 10V | 2V @ 250µA | 3.4 nC @ 4.5 V | ±20V | 506 pF @ 15 V | - | 3W (Ta) | ||
 |
SQM120N04-1M7L_GE3 | 3.4300 | |
3976 | 0.00000000 | Vishay Siliconix | TrenchFET® | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SQM120 | MOSFET (Metal Oxide) | TO-263 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 800 | N-Channel | 40 V | 120A (Tc) | 4.5V, 10V | 1.7mOhm @ 30A, 10V | 2.5V @ 250µA | 285 nC @ 10 V | ±20V | 14606 pF @ 20 V | - | 375W (Tc) | |||
 |
EPC2012C | 2.7600 | |
19 | 0.00000000 | EPC | eGaN® | Tape & Reel (TR) | Active | -40°C ~ 150°C (TJ) | Surface Mount | Die | EPC20 | GaNFET (Gallium Nitride) | Die | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0040 | 2,500 | N-Channel | 200 V | 5A (Ta) | 5V | 100mOhm @ 3A, 5V | 2.5V @ 1mA | 1.3 nC @ 5 V | +6V, -4V | 140 pF @ 100 V | - | - | ||
 |
FBG30N04CC | 330.6400 | |
99 | 0.00000000 | EPC Space, LLC | - | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, No Lead | GaNFET (Gallium Nitride) | 4-SMD | - | Not Applicable | 4107-FBG30N04CC | 0000.00.0000 | 169 | N-Channel | 300 V | 4A (Tc) | 5V | 404mOhm @ 4A, 5V | 2.8V @ 600µA | 2.6 nC @ 5 V | +6V, -4V | 450 pF @ 150 V | - | - | |||||
 |
IXFH26N50P3 | 8.0000 | |
298 | 0.00000000 | IXYS | HiPerFET™, Polar3™ | Tube | Active | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IXFH26 | MOSFET (Metal Oxide) | TO-247AD (IXFH) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 500 V | 26A (Tc) | 10V | 230mOhm @ 13A, 10V | 5V @ 4mA | 42 nC @ 10 V | ±30V | 2220 pF @ 25 V | - | 500W (Tc) | ||
 |
SVD14N03RT4G | 0.2313 | |
8971 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Last Time Buy | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SVD14N | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 25 V | 2.5A (Ta) | 4.5V, 10V | 95mOhm @ 5A, 10V | 2V @ 250µA | 1.8 nC @ 5 V | ±20V | 115 pF @ 20 V | - | 1.04W (Ta), 20.8W (Tc) | ||
 |
SSM3J372R,LF | 0.4400 | |
334 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | SSM3J372 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 6A (Ta) | 1.8V, 10V | 42mOhm @ 5A, 10V | 1.2V @ 1mA | 8.2 nC @ 4.5 V | +12V, -6V | 560 pF @ 15 V | - | 1W (Ta) | |||
 |
DMP6023LFG-7 | 0.9100 | |
8330 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | DMP6023 | MOSFET (Metal Oxide) | PowerDI3333-8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 7.7A (Ta) | 4.5V, 10V | 25mOhm @ 5A, 10V | 3V @ 250µA | 53.1 nC @ 10 V | ±20V | 2569 pF @ 30 V | - | 1W (Ta) | ||
 |
DMP1045UQ-7 | 0.4800 | |
3 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | DMP1045 | MOSFET (Metal Oxide) | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 12 V | 4A (Ta) | 1.8V, 4.5V | 31mOhm @ 4A, 4.5V | 1V @ 250µA | 15.8 nC @ 4.5 V | ±8V | 1357 pF @ 10 V | - | 800mW (Ta) | ||
 |
BUK9635-55A,118 | 1.3200 | |
2130 | 0.00000000 | Nexperia USA Inc. | Automotive, AEC-Q101, TrenchMOS™ | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | BUK9635 | MOSFET (Metal Oxide) | D2PAK | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 55 V | 34A (Tc) | 5V, 10V | 32mOhm @ 25A, 10V | 2V @ 1mA | ±10V | 1173 pF @ 25 V | - | 85W (Tc) | |||
 |
NTS4409NT1G | 0.4300 | |
1447 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | NTS4409 | MOSFET (Metal Oxide) | SC-70-3 (SOT323) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 25 V | 700mA (Ta) | 2.7V, 4.5V | 350mOhm @ 600mA, 4.5V | 1.5V @ 250µA | 1.5 nC @ 4.5 V | ±8V | 60 pF @ 10 V | - | 280mW (Tj) | ||
 |
BSP300 E6327 | - | |
2487 | 0.00000000 | Infineon Technologies | SIPMOS® | Tape & Reel (TR) | Discontinued at SIC | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | MOSFET (Metal Oxide) | PG-SOT223-4-21 | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 800 V | 190mA (Ta) | 10V | 20Ohm @ 190mA, 10V | 4V @ 1mA | ±20V | 230 pF @ 25 V | - | 1.8W (Ta) | ||||
 |
CWDM305P TR13 PBFREE | 0.1183 | |
3853 | 0.00000000 | Central Semiconductor Corp | - | Tape & Reel (TR) | Active | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | CWDM305 | MOSFET (Metal Oxide) | 8-SOIC | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 30 V | 5.3A (Ta) | 5V, 10V | 72mOhm @ 2.7A, 10V | 3V @ 250µA | 7 nC @ 5 V | 16V | 590 pF @ 10 V | - | 2W (Ta) | |||
 |
IRLU8743PBF | 1.7000 | |
14 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Not For New Designs | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IRLU8743 | MOSFET (Metal Oxide) | IPAK (TO-251AA) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 75 | N-Channel | 30 V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 25A, 10V | 2.35V @ 100µA | 59 nC @ 4.5 V | ±20V | 4880 pF @ 15 V | - | 135W (Tc) | ||
 |
STB45N30M5 | 6.9800 | |
262 | 0.00000000 | STMicroelectronics | MDmesh™ M5 | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | STB45 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 300 V | 53A (Tc) | 10V | 40mOhm @ 26.5A, 10V | 5V @ 250µA | 95 nC @ 10 V | ±25V | 4240 pF @ 100 V | - | 250W (Tc) | ||
 |
IRF200B211 | 1.1000 | |
233 | 0.00000000 | Infineon Technologies | HEXFET®, StrongIRFET™ | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | IRF200 | MOSFET (Metal Oxide) | TO-220AB | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 50 | N-Channel | 200 V | 12A (Tc) | 10V | 170mOhm @ 7.2A, 10V | 4.9V @ 50µA | 23 nC @ 10 V | ±20V | 790 pF @ 50 V | - | 80W (Tc) | ||
 |
APT12080JVR | - | |
3427 | 0.00000000 | Microsemi Corporation | POWER MOS V® | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227-4, miniBLOC | MOSFET (Metal Oxide) | ISOTOP® | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | N-Channel | 1200 V | 15A (Tc) | 10V | 800mOhm @ 7.5A, 10V | 4V @ 2.5mA | 485 nC @ 10 V | ±30V | 7800 pF @ 25 V | - | 450W (Tc) | |||||
|
UPA2752GR(1)-E1-A | - | |
4550 | 0.00000000 | Renesas Electronics America Inc | - | Tape & Reel (TR) | Obsolete | - | ROHS3 Compliant | Vendor Undefined | OBSOLETE | 0000.00.0000 | 3,000 | - | |||||||||||||||||||
 |
SN7002NH6433XTMA1 | 0.3900 | |
9 | 0.00000000 | Infineon Technologies | SIPMOS™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SN7002 | MOSFET (Metal Oxide) | PG-SOT23 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 60 V | 200mA (Ta) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 1.8V @ 26µA | 1.5 nC @ 10 V | ±20V | 45 pF @ 25 V | - | 360mW (Ta) | ||
 |
DMNH4011SPSQ-13 | 0.9700 | |
6609 | 0.00000000 | Diodes Incorporated | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | DMNH4011 | MOSFET (Metal Oxide) | PowerDI5060-8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 40 V | 12.9A (Ta), 100A (Tc) | 10V | 10mOhm @ 50A, 10V | 4V @ 250µA | 25.5 nC @ 10 V | ±20V | 1405 pF @ 20 V | - | 2.5W (Ta), 150W (Tc) | ||
 |
TK8A60W5,S5VX | 1.7500 | |
6899 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 8A (Ta) | 10V | 540mOhm @ 4A, 10V | 4.5V @ 400µA | 22 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W (Tc) | |||
 |
GPIXV30DFN | - | |
1692 | 0.00000000 | GaNPower | - | Bag | Active | - | Surface Mount | 8-WDFN Exposed Pad | GaNFET (Gallium Nitride) | 8-DFN (8x8) | - | 4025-GPIXV30DFN | 1 | N-Channel | 1200 V | 30A | - | - | - | - | - | - | |||||||||
 |
DMN62D1LFD-7 | 0.4300 | |
12 | 0.00000000 | Diodes Incorporated | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 3-UDFN | DMN62 | MOSFET (Metal Oxide) | X1-DFN1212-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 400mA (Ta) | 1.8V, 4V | 2Ohm @ 100mA, 4V | 1V @ 250µA | 0.55 nC @ 4.5 V | ±20V | 36 pF @ 25 V | - | 500mW (Ta) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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