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Single FETs, MOSFETs(44971)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IRL3303STRR | - |  |
9885 | 0.00000000 | Infineon Technologies | HEXFET® | Tape & Reel (TR) | Obsolete | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | D2PAK | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 30 V | 38A (Tc) | 4.5V, 10V | 26mOhm @ 20A, 10V | 1V @ 250µA | 26 nC @ 4.5 V | ±16V | 870 pF @ 25 V | - | 3.8W (Ta), 68W (Tc) | |||
 |
AUIRFZ44Z | 0.8300 | |
1 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 55 V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 1420 pF @ 25 V | - | 80W (Tc) | ||||||
 |
IPD50R3K0CEBTMA1 | - | |
4491 | 0.00000000 | Infineon Technologies | CoolMOS™ CE | Tape & Reel (TR) | Obsolete | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | IPD50R | MOSFET (Metal Oxide) | PG-TO252-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 500 V | 1.7A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3 nC @ 10 V | ±20V | 84 pF @ 100 V | - | 18W (Tc) | |||
 |
IRFB3004GPBF | - | |
7476 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220AB | download | 1 (Unlimited) | REACH Unaffected | SP001563908 | EAR99 | 8541.29.0095 | 50 | N-Channel | 40 V | 195A (Tc) | 10V | 1.75mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 380W (Tc) | |||
 |
DMTH3004LPS-13 | 0.4785 | |
2336 | 0.00000000 | Diodes Incorporated | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN | DMTH3004 | MOSFET (Metal Oxide) | PowerDI5060-8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Affected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 22A (Ta), 145A (Tc) | 4.5V, 10V | 3.8mOhm @ 20A, 10V | 3V @ 250µA | 43.7 nC @ 10 V | +20V, -16V | 2370 pF @ 15 V | - | 3.2W (Ta), 136W (Tc) | ||
 |
IPP60R600P6XKSA1 | - | |
2330 | 0.00000000 | Infineon Technologies | CoolMOS™ P6 | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | IPP60R | MOSFET (Metal Oxide) | PG-TO220-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 500 | N-Channel | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12 nC @ 10 V | ±20V | 557 pF @ 100 V | - | 63W (Tc) | |||
 |
TP65H070G4LSGB-TR | 11.3300 | |
3891 | 0.00000000 | Transphorm | SuperGaN® | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | GaNFET (Gallium Nitride) | 8-PQFN (8x8) | download | ROHS3 Compliant | 3 (168 Hours) | 3,000 | N-Channel | 650 V | 29A (Tc) | 10V | 85mOhm @ 16A, 10V | 4.6V @ 700µA | 8.4 nC @ 10 V | ±20V | 600 pF @ 400 V | - | 96W (Tc) | ||||||
 |
2SK2967(F) | - | |
8942 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Obsolete | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SK2967 | MOSFET (Metal Oxide) | TO-3P(N) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 250 V | 30A (Ta) | 10V | 68mOhm @ 15A, 10V | 3.5V @ 1mA | 132 nC @ 10 V | ±20V | 5400 pF @ 10 V | - | 150W (Tc) | ||||
 |
NVMFS5C410NLWFT1G | - | |
3607 | 0.00000000 | onsemi | Automotive, AEC-Q101 | Tape & Reel (TR) | Discontinued at SIC | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | NVMFS5 | MOSFET (Metal Oxide) | 5-DFN (5x6) (8-SOFL) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 40 V | 48A (Ta), 315A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2V @ 250µA | 143 nC @ 10 V | ±20V | 8862 pF @ 25 V | - | 3.8W (Ta), 167W (Tc) | ||
|
NTMFS4C13NT1G | 1.0500 | |
901 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | NTMFS4 | MOSFET (Metal Oxide) | 5-DFN (5x6) (8-SOFL) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 1,500 | N-Channel | 30 V | 7.2A (Ta), 38A (Tc) | 4.5V, 10V | 9.1mOhm @ 30A, 10V | 2.1V @ 250µA | 15.2 nC @ 10 V | ±20V | 770 pF @ 15 V | - | 750mW (Ta) | ||
 |
TK31N60W,S1VF | 9.2900 | |
1508 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK31N60 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | |||
 |
IPW65R145CFD7AXKSA1 | 6.4300 | |
4517 | 0.00000000 | Infineon Technologies | Automotive, AEC-Q101, CoolMOS™ | Tube | Active | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IPW65R145 | MOSFET (Metal Oxide) | PG-TO247-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 17A (Tc) | 145mOhm @ 8.5A, 10V | 4.5V @ 420µA | 36 nC @ 10 V | ±20V | 1694 pF @ 400 V | - | 98W (Tc) | |||
 |
BSZ086P03NS3GATMA1 | 0.9400 | |
15 | 0.00000000 | Infineon Technologies | OptiMOS™ | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | BSZ086 | MOSFET (Metal Oxide) | PG-TSDSON-8 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 30 V | 13.5A (Ta), 40A (Tc) | 6V, 10V | 8.6mOhm @ 20A, 10V | 3.1V @ 105µA | 57.5 nC @ 10 V | ±25V | 4785 pF @ 15 V | - | 2.1W (Ta), 69W (Tc) | ||
 |
NTF3055L108T1G | 0.9000 | |
2204 | 0.00000000 | onsemi | - | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | TO-261-4, TO-261AA | NTF3055 | MOSFET (Metal Oxide) | SOT-223 (TO-261) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 60 V | 3A (Ta) | 5V | 120mOhm @ 1.5A, 5V | 2V @ 250µA | 15 nC @ 5 V | ±15V | 440 pF @ 25 V | - | 1.3W (Ta) | ||
|
NVMFS5C604NLWFAFT1G | 5.7400 | |
1369 | 0.00000000 | onsemi | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | NVMFS5 | MOSFET (Metal Oxide) | 5-DFN (5x6) (8-SOFL) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 60 V | 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 52 nC @ 4.5 V | ±20V | 8900 pF @ 25 V | - | 200W (Tc) | ||
 |
IPW65R150CFDFKSA1 | 3.6525 | |
2340 | 0.00000000 | Infineon Technologies | CoolMOS™ | Tube | Last Time Buy | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | IPW65R150 | MOSFET (Metal Oxide) | PG-TO247-3 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86 nC @ 10 V | ±20V | 2340 pF @ 100 V | - | 195.3W (Tc) | ||
 |
IRF7663 | - | |
9146 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | MOSFET (Metal Oxide) | Micro8™ | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 80 | P-Channel | 20 V | 8.2A (Ta) | 2.5V, 4.5V | 20mOhm @ 7A, 4.5V | 1.2V @ 250µA | 45 nC @ 5 V | ±12V | 2520 pF @ 10 V | - | 1.8W (Ta) | ||||
 |
IRFU1010Z | - | |
1884 | 0.00000000 | Infineon Technologies | HEXFET® | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | MOSFET (Metal Oxide) | IPAK (TO-251AA) | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | *IRFU1010Z | EAR99 | 8541.29.0095 | 75 | N-Channel | 55 V | 42A (Tc) | 10V | 7.5mOhm @ 42A, 10V | 4V @ 100µA | 95 nC @ 10 V | ±20V | 2840 pF @ 25 V | - | 140W (Tc) | ||
 |
SIHG73N60AEL-GE3 | 12.0500 | |
40 | 0.00000000 | Vishay Siliconix | EL | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | SIHG73 | MOSFET (Metal Oxide) | TO-247AC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 69A (Tc) | 10V | 42mOhm @ 36.5A, 10V | 4V @ 250µA | 342 nC @ 10 V | ±30V | 6709 pF @ 100 V | - | 520W (Tc) | |||
 |
RD3H200SNTL1 | 1.5700 | |
1 | 0.00000000 | Rohm Semiconductor | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | RD3H200 | MOSFET (Metal Oxide) | TO-252 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 45 V | 20A (Ta) | 4V, 10V | 28mOhm @ 20A, 10V | 2.5V @ 1mA | 12 nC @ 5 V | ±20V | 950 pF @ 10 V | - | 20W (Tc) | ||
 |
APT20M18LVRG | 21.5900 | |
1786 | 0.00000000 | Microchip Technology | POWER MOS V® | Tube | Active | Through Hole | TO-264-3, TO-264AA | APT20M18 | MOSFET (Metal Oxide) | TO-264 [L] | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 200 V | 100A (Tc) | 18mOhm @ 50A, 10V | 4V @ 2.5mA | 330 nC @ 10 V | 9880 pF @ 25 V | - | ||||||
 |
IPI60R299CPXKSA1 | - | |
8573 | 0.00000000 | Infineon Technologies | CoolMOS™ | Tube | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | IPI60R | MOSFET (Metal Oxide) | PG-TO262-3 | download | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 500 | N-Channel | 600 V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 96W (Tc) | |||
 |
JAN2N6758 | - | |
1491 | 0.00000000 | Microsemi Corporation | Military, MIL-PRF-19500/542 | Bulk | Obsolete | -55°C ~ 150°C (TJ) | Through Hole | TO-204AA, TO-3 | MOSFET (Metal Oxide) | TO-204AA (TO-3) | download | RoHS non-compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 1 | N-Channel | 200 V | 9A (Tc) | 10V | 490mOhm @ 9A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±20V | - | 4W (Ta), 75W (Tc) | ||||
|
IRFU7746PBF | - | |
9065 | 0.00000000 | Infineon Technologies | HEXFET®, StrongIRFET™ | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | IRFU7746 | MOSFET (Metal Oxide) | IPAK (TO-251AA) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | SP001552464 | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 75 V | 56A (Tc) | 6V, 10V | 11.2mOhm @ 35A, 10V | 3.7V @ 100µA | 89 nC @ 10 V | ±20V | 3107 pF @ 25 V | - | 99W (Tc) | |
 |
TK40S10K3Z(T6L1,NQ | - | |
6132 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK40S10 | MOSFET (Metal Oxide) | DPAK+ | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 40A (Ta) | 10V | 18mOhm @ 20A, 10V | 4V @ 1mA | 61 nC @ 10 V | ±20V | 3110 pF @ 10 V | - | 93W (Tc) | |||
|
IPQC60R040S7XTMA1 | 11.4400 | |
8678 | 0.00000000 | Infineon Technologies | CoolMOS™ S7 | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 22-PowerBSOP Module | MOSFET (Metal Oxide) | PG-HDSOP-22 | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 750 | N-Channel | 600 V | 14A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 790µA | 83 nC @ 12 V | ±20V | - | 272W (Tc) | ||||||
 |
FQB5N60CTM-WS | 1.4900 | |
763 | 0.00000000 | onsemi | QFET® | Tape & Reel (TR) | Obsolete | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | FQB5N60 | MOSFET (Metal Oxide) | D²PAK (TO-263) | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 800 | N-Channel | 600 V | 4.5A (Tc) | 10V | 2.5Ohm @ 2.25A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±30V | 670 pF @ 25 V | - | 100W (Tc) | ||
|
5HN02C-TB-E | 0.1000 | |
45 | 0.00000000 | onsemi | * | Bulk | Active | - | Not applicable | 1 (Unlimited) | Vendor Undefined | EAR99 | 8541.21.0095 | 3,000 | |||||||||||||||||||
|
IRF5805TRPBF | - | |
7325 | 0.00000000 | International Rectifier | HEXFET® | Bulk | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | MOSFET (Metal Oxide) | Micro6™(TSOP-6) | - | Not applicable | 2 (1 Year) | REACH Unaffected | EAR99 | 0000.00.0000 | 1 | P-Channel | 30 V | 3.8A (Ta) | 4.5V, 10V | 98mOhm @ 3.8A, 10V | 2.5V @ 250µA | 17 nC @ 10 V | ±20V | 511 pF @ 25 V | - | 2W (Ta) | |||
 |
TPH3205WSB | - | |
3868 | 0.00000000 | Transphorm | - | Tube | Obsolete | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | GaNFET (Gallium Nitride) | TO-247-3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 180 | N-Channel | 650 V | 36A (Tc) | 10V | 60mOhm @ 22A, 8V | 2.6V @ 700µA | 42 nC @ 8 V | ±18V | 2200 pF @ 400 V | - | 125W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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