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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Voltage - Supply | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
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RD48F3000P0ZBQEA | - | 4271 | 0.00000000 | Micron Technology Inc. | Axcell™ | Tray | Obsolete | -40°C ~ 85°C (TC) | Surface Mount | 88-TFBGA, CSPBGA | RD48F3000 | FLASH - NOR | 1.7V ~ 2V | 88-SCSP (8x10) | download | RoHS non-compliant | 3 (168 Hours) | REACH Unaffected | -RD48F3000P0ZBQEA | 3A991B1A | 8542.32.0071 | 300 | 52 MHz | Non-Volatile | 128Mbit | 65 ns | FLASH | 8M x 16 | Parallel | 65ns | |||
MT29F1G08ABBEAH4:E TR | - | 3962 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | 0°C ~ 70°C (TA) | Surface Mount | 63-VFBGA | MT29F1G08 | FLASH - NAND | 1.7V ~ 1.95V | 63-VFBGA (9x11) | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 3A991B1A | 8542.32.0071 | 1,000 | Non-Volatile | 1Gbit | FLASH | 128M x 8 | Parallel | - | ||||||
MT29F1G08ABAEAH4-ITX:E | - | 9184 | 0.00000000 | Micron Technology Inc. | - | Tray | Obsolete | -40°C ~ 85°C (TA) | Surface Mount | 63-VFBGA | MT29F1G08 | FLASH - NAND | 2.7V ~ 3.6V | 63-VFBGA (9x11) | - | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 3A991B1A | 8542.32.0071 | 1,260 | Non-Volatile | 1Gbit | FLASH | 128M x 8 | Parallel | - | ||||||
JS28F320J3D75B TR | - | 7555 | 0.00000000 | Micron Technology Inc. | StrataFlash™ | Tape & Reel (TR) | Obsolete | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | JS28F320J3 | FLASH - NOR | 2.7V ~ 3.6V | 56-TSOP | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 3A991B1A | 8542.32.0071 | 1,600 | Non-Volatile | 32Mbit | 75 ns | FLASH | 4M x 8, 2M x 16 | Parallel | 75ns | |||||
M29W128GL7AN6F TR | - | 8610 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -40°C ~ 85°C (TA) | Surface Mount | 56-TFSOP (0.724", 18.40mm Width) | M29W128 | FLASH - NOR | 2.7V ~ 3.6V | 56-TSOP | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 3A991B1A | 8542.32.0071 | 1,200 | Non-Volatile | 128Mbit | 70 ns | FLASH | 16M x 8, 8M x 16 | Parallel | 70ns | |||||
MT45W4MW16BFB-708 L WT | - | 3694 | 0.00000000 | Micron Technology Inc. | - | Box | Discontinued at SIC | -30°C ~ 85°C (TC) | Surface Mount | 54-VFBGA | MT45W4MW16 | PSRAM (Pseudo SRAM) | 1.7V ~ 1.95V | 54-VFBGA (6x9) | download | RoHS non-compliant | 2 (1 Year) | REACH Unaffected | 3A991B2A | 8542.32.0041 | 2,000 | Volatile | 64Mbit | 70 ns | PSRAM | 4M x 16 | Parallel | 70ns | |||||
MT53E1G32D2FW-046 AIT:C TR | - | 7688 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | - | 557-MT53E1G32D2FW-046AIT:CTR | 1 | 2.133 GHz | Volatile | 32Gbit | 3.5 ns | DRAM | 1G x 32 | Parallel | 18ns | |||||||||
M29W160ET7AN6E | - | 1450 | 0.00000000 | Micron Technology Inc. | - | Tray | Obsolete | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | M29W160 | FLASH - NOR | 2.7V ~ 3.6V | 48-TSOP I | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | EAR99 | 8542.32.0071 | 96 | Non-Volatile | 16Mbit | 70 ns | FLASH | 2M x 8, 1M x 16 | Parallel | 70ns | |||||
MT49H16M36FM-18:B | - | 7649 | 0.00000000 | Micron Technology Inc. | - | Bulk | Discontinued at SIC | 0°C ~ 95°C (TC) | Surface Mount | 144-TFBGA | MT49H16M36 | DRAM | 1.7V ~ 1.9V | 144-µBGA (18.5x11) | download | ROHS3 Compliant | 3 (168 Hours) | REACH Unaffected | 3A991B2A | 8542.32.0032 | 1,000 | 533 MHz | Volatile | 576Mbit | 15 ns | DRAM | 16M x 36 | Parallel | - | ||||
MT53E768M64D4HJ-046 AIT:A TR | - | 4381 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Obsolete | -40°C ~ 95°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | - | ROHS3 Compliant | 557-MT53E768M64D4HJ-046AIT:ATR | OBSOLETE | 1 | 2.133 GHz | Volatile | 48Gbit | 3.5 ns | DRAM | 768M x 64 | Parallel | 18ns | |||||||
MT53E768M32D4DE-046 WT:E | 25.0400 | 1593 | 0.00000000 | Micron Technology Inc. | - | Bulk | Active | -25°C ~ 85°C | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | - | 557-MT53E768M32D4DE-046WT:E | 1 | 2.133 GHz | Volatile | 24Gbit | 3.5 ns | DRAM | 768M x 32 | Parallel | 18ns | |||||||||
MT53E1G32D4NQ-046 WT:F TR | - | 9225 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | -30°C ~ 85°C | Surface Mount | 200-VFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-VFBGA (10x14.5) | - | ROHS3 Compliant | 557-MT53E1G32D4NQ-046WT:FTR | OBSOLETE | 1 | 2.133 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | - | |||||||||
MT53E384M32D2FW-046 WT:E | 10.4600 | 2225 | 0.00000000 | Micron Technology Inc. | - | Bulk | Active | -25°C ~ 85°C | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | - | ROHS3 Compliant | 557-MT53E384M32D2FW-046WT:E | 1 | 2.133 GHz | Volatile | 12Gbit | 3.5 ns | DRAM | 384M x 32 | Parallel | 18ns | ||||||||
MT53E768M64D4HJ-046 AIT:C | 58.2150 | 3702 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 95°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | - | ROHS3 Compliant | 557-MT53E768M64D4HJ-046AIT:C | 1 | 2.133 GHz | Volatile | 48Gbit | 3.5 ns | DRAM | 768M x 64 | Parallel | 18ns | ||||||||
MT53E1536M32D4DE-046 AAT:C | 40.2450 | 8072 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Tray | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4 | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | - | ROHS3 Compliant | 557-MT53E1536M32D4DE-046AAT:C | 1 | 2.133 GHz | Volatile | 48Gbit | 3.5 ns | DRAM | 1.5G x 32 | Parallel | 18ns | ||||||||
MT29VZZZCDAFQKWL-046 W.G0L | 119.5650 | 3639 | 0.00000000 | Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | Surface Mount | 254-BGA | FLASH - NAND, DRAM - LPDDR4X | - | 254-TFBGA | - | 557-MT29VZZZCDAFQKWL-046W.G0L | 1 | 2.133 GHz | Non-Volatile, Volatile | 2Tbit (NAND), 64Gbit (LPDDR4X) | FLASH, RAM | 256G x 8 (NAND), 2G x 32 (LPDDR4X) | UFS2.1 | - | ||||||||||
MT53E256M32D2FW-046 AUT:B TR | 17.8200 | 4779 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Last Time Buy | -40°C ~ 125°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | download | 557-MT53E256M32D2FW-046AUT:BTR | 2,000 | 2.133 GHz | Volatile | 8Gbit | 3.5 ns | DRAM | 256M x 32 | Parallel | 18ns | |||||||||
MT62F2G64D8EK-023 WT ES:B | 90.4650 | 5248 | 0.00000000 | Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 441-TFBGA (14x14) | - | 557-MT62F2G64D8EK-023WTES:B | 1 | 4.266 GHz | Volatile | 128Gbit | DRAM | 2G x 64 | Parallel | - | ||||||||||
MT53E128M32D2FW-046 AIT:A TR | 7.9500 | 4748 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Active | - | 557-MT53E128M32D2FW-046AIT:ATR | 2,000 | |||||||||||||||||||||||
MT60B2G8HB-48B:A TR | 16.5750 | 6131 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Active | 0°C ~ 95°C (TC) | Surface Mount | 82-VFBGA | SDRAM - DDR5 | - | 82-VFBGA (9x11) | - | 557-MT60B2G8HB-48B:ATR | 3,000 | 2.4 GHz | Volatile | 16Gbit | 16 ns | DRAM | 2G x 8 | POD | - | |||||||||
MT29F2T08EELCHD4-M:C TR | 41.9550 | 1895 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Active | - | 557-MT29F2T08EELCHD4-M:CTR | 2,000 | |||||||||||||||||||||||
MT29F1T08EELEEJ4-M:E TR | 21.4500 | 4423 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Active | - | 557-MT29F1T08EELEEJ4-M:ETR | 2,000 | |||||||||||||||||||||||
MT62F1536M32D4DS-026 WT:B TR | 34.2750 | 5002 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Active | - | 557-MT62F1536M32D4DS-026WT:BTR | 2,000 | |||||||||||||||||||||||
MT53E512M64D2HJ-046 AIT:B | 29.9700 | 2935 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 95°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | - | 557-MT53E512M64D2HJ-046AIT:B | 1 | 2.133 GHz | Volatile | 32Gbit | 3.5 ns | DRAM | 512M x 64 | Parallel | 18ns | |||||||||
MT53E1G32D4NQ-053 RS WT:J | 33.6150 | 7458 | 0.00000000 | Micron Technology Inc. | - | Box | Active | - | 557-MT53E1G32D4NQ-053RSWT:J | 1 | |||||||||||||||||||||||
MT29GZ6A6BPIET-046AAT.112 | 20.2200 | 7324 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 105°C (TA) | Surface Mount | 149-VFBGA | FLASH - NAND (SLC), DRAM - LPDDR4 | 1.06V ~ 1.17V, 1.7V ~ 1.95V | 149-VFBGA (8x9.5) | - | 557-MT29GZ6A6BPIET-046AAT.112 | 1 | 2.133 GHz | Non-Volatile, Volatile | 8Gbit (NAND), 8Gbit (LPDDR4) | 25 ns | FLASH, RAM | 1G x 8 (NAND), 512M x 16 (LPDDR4) | ONFI | 20ns, 30ns | |||||||||
MT62F4G32D8DV-023 WT:B | 90.4650 | 8128 | 0.00000000 | Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | - | - | SDRAM - Mobile LPDDR5 | - | - | - | 557-MT62F4G32D8DV-023WT:B | 1 | 4.266 GHz | Volatile | 128Gbit | DRAM | 4G x 32 | Parallel | - | ||||||||||
MT29F8T08EQLCHL5-QA:C | 167.8050 | 4857 | 0.00000000 | Micron Technology Inc. | - | Box | Active | - | 557-MT29F8T08EQLCHL5-QA:C | 1 | |||||||||||||||||||||||
MT29VZZZCD9GQKPR-046 W.12L | 81.4800 | 7024 | 0.00000000 | Micron Technology Inc. | - | Box | Active | - | 557-MT29VZZZCD9GQKPR-046W.12L | 1 | |||||||||||||||||||||||
MT62F1G32D2DS-023 AUT:C | 36.7350 | 2367 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | - | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | - | 557-MT62F1G32D2DS-023AUT:C | 1 | 4.266 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | Parallel | - |
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