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Memory(10415)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | SIC Programmable | Voltage - Supply | Supplier Device Package | DataSheet | Other Names | ECCN | Standard Package | Clock Frequency | Memory Type | Memory Size | Access Time | Memory Format | Memory Organization | Memory Interface | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MT29F1T08EBLCHD4-QA:C | 20.9850 |  |
4155 | 0.00000000 | Micron Technology Inc. | - | Box | Active | - | 557-MT29F1T08EBLCHD4-QA:C | 1 | ||||||||||||||||||
|
MT41K512M16VRP-107 AAT:P | 18.4350 | |
3457 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 105°C (TC) | Surface Mount | 96-TFBGA | SDRAM - DDR3L | 1.283V ~ 1.45V | 96-FBGA (8x14) | download | 557-MT41K512M16VRP-107AAT:P | 1 | 933 MHz | Volatile | 8Gbit | 20 ns | DRAM | 512M x 16 | Parallel | 15ns | ||||
|
MT29F8T08GULCEM4-QM:C | 156.3000 | |
8640 | 0.00000000 | Micron Technology Inc. | - | Box | Active | - | 557-MT29F8T08GULCEM4-QM:C | 1 | ||||||||||||||||||
|
MT29F1T08EELEEJ4-QJ:E | 26.4750 | |
2373 | 0.00000000 | Micron Technology Inc. | - | Box | Active | - | 557-MT29F1T08EELEEJ4-QJ:E | 1 | ||||||||||||||||||
|
MT29F4T08EQLEEG8-QD:E TR | 105.9600 | |
4206 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Active | - | 557-MT29F4T08EQLEEG8-QD:ETR | 2,000 | ||||||||||||||||||
|
MT29F2T08EELCHD4-M:C | 41.9550 | |
3409 | 0.00000000 | Micron Technology Inc. | - | Box | Active | - | 557-MT29F2T08EELCHD4-M:C | 1 | ||||||||||||||||||
 |
MT53E512M32D1ZW-046 AIT:B | 14.7000 | |
5366 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | - | 557-MT53E512M32D1ZW-046AIT:B | 1 | 2.133 GHz | Volatile | 16Gbit | 3.5 ns | DRAM | 512M x 32 | Parallel | 18ns | ||||
 |
MT53E256M32D2FW-046 AAT:B TR | 15.4950 | |
1410 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | download | 557-MT53E256M32D2FW-046AAT:BTR | 2,000 | 2.133 GHz | Volatile | 8Gbit | 3.5 ns | DRAM | 256M x 32 | Parallel | 18ns | ||||
|
MT40A1G16TD-062E AUT:F | 22.8450 | |
3279 | 0.00000000 | Micron Technology Inc. | - | Box | Active | -40°C ~ 125°C (TC) | - | - | SDRAM - DDR4 | 1.14V ~ 1.26V | - | - | 557-MT40A1G16TD-062EAUT:F | 1 | 1.6 GHz | Volatile | 16Gbit | 19 ns | DRAM | 1G x 16 | POD | 15ns | ||||
|
MT62F512M64D4EK-031 WT:B | 23.3100 | |
7515 | 0.00000000 | Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | - | 441-TFBGA (14x14) | - | 557-MT62F512M64D4EK-031WT:B | 1 | 3.2 GHz | Volatile | 32Gbit | DRAM | 512M x 64 | Parallel | - | |||||
|
MT62F1G32D2DS-023 AAT:B | 31.9350 | |
2628 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | - | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | - | 557-MT62F1G32D2DS-023AAT:B | 1 | 4.266 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | Parallel | - | |||||
|
MT53E768M64D4HJ-046 AAT:B TR | 47.8950 | |
6241 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | - | 557-MT53E768M64D4HJ-046AAT:BTR | 2,000 | 2.133 GHz | Volatile | 48Gbit | 3.5 ns | DRAM | 768M x 64 | Parallel | 18ns | ||||
|
MT29F512G08EBLEEJ4-R:E TR | 10.7250 | |
1826 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Active | 0°C ~ 70°C | Surface Mount | 132-VBGA | FLASH - NAND (TLC) | 2.6V ~ 3.6V | 132-VBGA (12x18) | - | 557-MT29F512G08EBLEEJ4-R:ETR | 2,000 | Non-Volatile | 512Gbit | FLASH | 64G x 8 | Parallel | - | ||||||
|
MT62F512M32D2DS-031 AAT:B | 17.4150 | |
3538 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 105°C | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | - | 200-WFBGA (10x14.5) | - | 557-MT62F512M32D2DS-031AAT:B | 1 | 3.2 GHz | Volatile | 16Gbit | DRAM | 512M x 32 | Parallel | - | |||||
|
MT53E4G32D8CY-046 WT:C | 90.4650 | |
9649 | 0.00000000 | Micron Technology Inc. | - | Box | Active | -25°C ~ 85°C | - | - | SDRAM - Mobile LPDDR4 | - | - | - | 557-MT53E4G32D8CY-046WT:C | 1 | 2.133 GHz | Volatile | 128Gbit | DRAM | 4G x 32 | Parallel | - | |||||
|
MT29F4T08EULEEM4-T:E | 85.8150 | |
3009 | 0.00000000 | Micron Technology Inc. | - | Box | Active | 0°C ~ 70°C | Surface Mount | 132-BGA | FLASH - NAND (TLC) | 2.6V ~ 3.6V | 132-LBGA (12x18) | - | 557-MT29F4T08EULEEM4-T:E | 1 | Non-Volatile | 4Tbit | FLASH | 512G x 8 | Parallel | - | ||||||
|
MT62F3G32D8DV-023 AUT:B | 109.0500 | |
2781 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 125°C | - | - | SDRAM - Mobile LPDDR5 | - | - | - | 557-MT62F3G32D8DV-023AUT:B | 1 | 4.266 GHz | Volatile | 96Gbit | DRAM | 3G x 32 | Parallel | - | |||||
|
MT53E2G64D8TN-046 WT:A TR | 92.3100 | |
8633 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Active | -25°C ~ 85°C (TC) | Surface Mount | 556-LFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 556-LFBGA (12.4x12.4) | - | 557-MT53E2G64D8TN-046WT:ATR | 2,000 | 2.133 GHz | Volatile | 128Gbit | 3.5 ns | DRAM | 2G x 64 | Parallel | 18ns | ||||
|
MT29GZ6A6BPIET-53IT.112 TR | 16.7100 | |
1309 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Active | - | 557-MT29GZ6A6BPIET-53IT.112TR | 2,000 | ||||||||||||||||||
|
MT53E1G32D2FW-046 IT:A | 27.1500 | |
7860 | 0.00000000 | Micron Technology Inc. | - | Box | Active | -40°C ~ 95°C (TC) | Surface Mount | 200-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 200-TFBGA (10x14.5) | - | 557-MT53E1G32D2FW-046IT:A | 1 | 2.133 GHz | Volatile | 32Gbit | DRAM | 1G x 32 | Parallel | 18ns | |||||
|
MT62F2G32D4DS-023 AUT:C TR | 73.4400 | |
8011 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Active | - | 557-MT62F2G32D4DS-023AUT:CTR | 2,000 | ||||||||||||||||||
|
MT62F768M64D4ZU-031 RF WT:B TR | 27.9300 | |
5757 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Active | MT62F768 | - | 557-MT62F768M64D4ZU-031RFWT:BTR | 2,500 | |||||||||||||||||
|
MT62F2G32D4DS-023 FAAT:B | 63.8550 | |
7803 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | - | Surface Mount | 200-WFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 200-WFBGA (10x14.5) | - | 557-MT62F2G32D4DS-023FAAT:B | 1 | 4.266 GHz | Volatile | 64Gbit | DRAM | 2G x 32 | Parallel | - | |||||
|
MT62F1G64D4EK-023 FAAT:B | 63.8550 | |
6443 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | - | Surface Mount | 441-TFBGA | SDRAM - Mobile LPDDR5 | 1.05V | 441-TFBGA (14x14) | - | 557-MT62F1G64D4EK-023FAAT:B | 1 | 4.266 GHz | Volatile | 64Gbit | DRAM | 1G x 64 | Parallel | - | |||||
|
MTFC64GASAONS-AAT TR | 41.4750 | |
6526 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q104 | Tape & Reel (TR) | Active | -40°C ~ 105°C (TC) | Surface Mount | 153-TFBGA | FLASH - NAND (SLC) | 2.7V ~ 3.6V | 153-TFBGA (11.5x13) | - | 557-MTFC64GASAONS-AATTR | 2,000 | 52 MHz | Non-Volatile | 512Gbit | FLASH | 64G x 8 | UFS2.1 | - | |||||
|
MTFC16GAPALGT-S1 IT | 17.6400 | |
6046 | 0.00000000 | Micron Technology Inc. | e•MMC™ | Box | Active | - | Surface Mount | 153-TFBGA | FLASH - NAND (SLC) | - | 153-TFBGA (11.5x13) | - | 557-MTFC16GAPALGT-S1IT | 1 | Non-Volatile | 128Gbit | FLASH | 16G x 8 | eMMC_5.1 | - | ||||||
|
MT53E512M32D4NQ-053 RS WT:F TR | - | |
1179 | 0.00000000 | Micron Technology Inc. | - | Tape & Reel (TR) | Obsolete | - | 557-MT53E512M32D4NQ-053RSWT:FTR | OBSOLETE | 2,000 | |||||||||||||||||
|
MT29F4T08EULEEM4-M:E | 85.7850 | |
8880 | 0.00000000 | Micron Technology Inc. | - | Box | Active | Not Verified | - | 557-MT29F4T08EULEEM4-M:E | 1 | |||||||||||||||||
|
MT53E768M64D4HJ-046 AIT:B | 44.2350 | |
9484 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Box | Active | -40°C ~ 95°C (TC) | Surface Mount | 556-TFBGA | SDRAM - Mobile LPDDR4X | 1.06V ~ 1.17V | 556-WFBGA (12.4x12.4) | - | 557-MT53E768M64D4HJ-046AIT:B | 1 | 2.133 GHz | Volatile | 48Gbit | 3.5 ns | DRAM | 768M x 64 | Parallel | 18ns | ||||
|
MT62F3G32D8DV-026 AIT:B TR | 86.2050 | |
7352 | 0.00000000 | Micron Technology Inc. | Automotive, AEC-Q100 | Tape & Reel (TR) | Active | -40°C ~ 95°C | - | - | SDRAM - Mobile LPDDR5 | - | - | - | 557-MT62F3G32D8DV-026AIT:BTR | 2,000 | 3.2 GHz | Volatile | 96Gbit | DRAM | 3G x 32 | Parallel | - |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
Wishlist (0 Items)