MMBT3904LT3G by onsemi Single Bipolar Transistors

ONSEMI MMBT3904LT3G +BOM

The ONSEMI MMBT3904LT3G is a widely - used NPN silicon transistor. It's RoHS - compliant and AEC - Q101 qualified, suitable for automotive and general - purpose electronics. Housed in a compact SOT - 23 package, it has a 40 V Collector - Emitter Voltage rating and 200 mA continuous Collector Current. Ideal for amplification and switching in circuits, it enables efficient signal processing and current control.

ONSEMI MMBT3904LT3G's Features

ONSEMI's MMBT3904LT3G is a general - purpose NPN silicon transistor with several notable features. It is Pb - Free, Halogen Free/BFR Free, and RoHS Compliant, meeting environmental requirements for electronic products. The "S" prefix indicates its suitability for automotive and other applications with unique site and control change requirements, and it is AEC - Q101 Qualified and PPAP Capable, ensuring high - reliability performance in automotive and related fields.

Packaged in the SOT - 23 (TO - 236) case, it offers a compact form factor, which is beneficial for space - constrained circuit designs. In terms of electrical performance, it has a Collector - Emitter Voltage (VCEO) rating of 40 Vdc, Collector - Base Voltage (VCBO) of 60 Vdc, and Emitter - Base Voltage (VEBO) of 6.0 Vdc. The continuous Collector Current (IC) is 200 mAdc, and the peak Collector Current (ICM) can reach 900 mAdc, making it suitable for a variety of low - to medium - current applications. These features make the MMBT3904LT3G a versatile and reliable choice for different electronic circuits.

ONSEMI MMBT3904LT3G's Applications

The ONSEMI MMBT3904LT3G, a highly versatile NPN silicon transistor, finds extensive use in a wide array of applications. In the realm of automotive electronics, its AEC - Q101 qualification and PPAP capability make it an ideal choice. It can be employed in engine control units to manage the electrical signals that regulate engine functions. Additionally, it is useful in automotive lighting systems, where it controls the current flow to ensure stable and efficient operation of headlights, taillights, and interior lights. For general - purpose electronic circuits, it serves as a fundamental building block. In audio amplification circuits, the MMBT3904LT3G can boost weak audio signals. Its small - signal characteristics, such as a current - gain - bandwidth product (fT) of 300 MHz, enable it to handle high - frequency audio signals effectively. It is also used in switching circuits. With relatively low switching times, like a delay time of up to 35 ns and a rise time of up to 35 ns, it can rapidly turn on and off, making it suitable for applications that require quick signal transitions, such as digital logic circuits and power - management systems.

ONSEMI MMBT3904LT3G's Attributes

Status	Active	Compliance	PbAHP
Package Type	SOT-23-3	Case Outline	318-08
MSL Type	1	MSL Temp (°C)	260
Container Type	REEL	Container Qty.	10000
ON Target	N	Polarity	NPN
Type	General Purpose	VCE(sat) Max (V)	0.3
IC Cont. (A)	0.2	VCEO Min (V)	40
VCBO (V)	60	VEBO (V)	6
VBE(sat) (V)	0.95	hFE Min	100
hFE Max	300	fT Min (MHz)	300
PTM Max (W)	0.225	Pricing ($/Unit)	$0.0113

ONSEMI MMBT3904LT3G's Datasheet

ONSEMI MMBT3904LT3G's Category-Single Bipolar Transistors

Single bipolar transistors, also known as field - effect transistors (FETs), are voltage - controlled devices where only one type of charge carrier (majority carriers) participates in the conduction process. This is in contrast to bipolar junction transistors (BJTs) which use both electrons and holes.

FETs operate based on the principle of an electric field effect. For example, in an N - channel enhancement - mode MOSFET, a positive voltage applied between the gate and source creates an electric field. This field repels the majority carriers (holes) in the P - type substrate and attracts minority carriers (electrons), forming an N - type inversion layer, or a conductive channel between the source and the drain. By controlling the gate - source voltage, the width of this channel can be adjusted, thereby controlling the drain - source current.

These transistors offer several advantages. They have high input impedance, which means they draw very little current from the input signal source. This property is beneficial in applications where minimizing the loading effect on the input signal is crucial. They also consume low power, have good thermal stability, and are highly resistant to radiation. Additionally, in integrated circuits, they occupy less area and have a simpler manufacturing process compared to some other components.

Single bipolar transistors can be classified into two main types: insulated - gate field - effect transistors (IGFETs), more commonly known as metal - oxide - semiconductor field - effect transistors (MOSFETs), and junction field - effect transistors (JFETs). MOSFETs can further be divided into N - channel and P - channel types, as well as enhancement - mode and depletion - mode varieties.

Among the numerous single bipolar transistors available, the ONSEMI MMBT3904LT3G is a general - purpose NPN silicon transistor. It is widely used in various applications such as signal amplification and switching circuits due to its suitable electrical characteristics, including a maximum collector - emitter voltage of 40 V, a maximum collector current of 200 mA, and a transition frequency of 300 MHz.

MMBT3904LT3G vs MMBTA06LT1G

Pictures
Part number	MMBT3904LT3G +BOM	MMBTA06LT1G +BOM
Manufacturer	Onsemi	Onsemi
Package	SOT23-3	SOT23-3
Description	200mA NPN bipolar transistors capable of handling up to 60V	Small Signal Bipolar Transistor, NPN, Silicon, TO-236, 0.5A I(C), 80V V(BR)CEO
Stock	4681	6076
Part Status	Active	Active
Compliance	PbAHP	PbAHP
Case Outline	318-08	318-08
MSL Type	1	1
MSL Temp (°C)	260	260
Container Type	REEL	REEL
Container Qty.	10000	3000
ON Target	N	N
Polarity	NPN	NPN
Manufacturer Type	General Purpose	General Purpose
VCE(sat) Max (V)	0.3	0.25
IC Cont. (A)	0.2	0.5
VCEO Min (V)	40	80
VCBO (V)	60	80
VEBO (V)	6	4
hFE Min	100	100
fT Min (MHz)	300	100
PTM Max (W)	0.225	0.225
Pricing ($/Unit)	$0.0113	$0.0165Sample
VBE(on) (V)	1.2
VBE(sat) (V)	0.95
hFE Max	300

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