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  • NTF3055-100T1G by onsemi Single MOSFETs

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ONSemi  NTF3055-100T1G+BOM


ONSemi's NTF3055-100T1G is an N-channel power MOSFET. Packaged in SOT-223, it's designed for low-voltage, high-speed switching applications. With a continuous drain current of 3.0 A at 25°C (1.4 A at 100°C) and a single - pulse current of 9.0 A, along with a 60V drain - source voltage and a low static drain - source on - resistance of 110mΩ, it reduces conduction losses effectively. It meets environmental standards like being lead - free and RoHS - compliant. Devices prefixed with NVF are suitable for automotive and special - requirement applications, having passed AEC - Q101 and with PPAP capabilities, ensuring high reliability.

ONSemi  NTF3055-100T1G’s Features 

ONSemi's NTF3055-100T1G is an N-channel power MOSFET packaged in SOT-223 and has many features. It is suitable for low-voltage, high-speed switching applications, such as power supplies, converters, power motor controls, and bridge circuits. Its continuous drain current is 3.0 A at 25°C, 1.4 A at 100°C, and can reach 9.0 A in a single pulse. The drain-source voltage is 60 V, and the static drain-source on-resistance is as low as 110 mΩ, which can effectively reduce conduction losses.


Devices with the NVF prefix are suitable for automotive and other applications with special site and control change requirements. They have passed the AEC-Q101 certification and have PPAP capabilities, ensuring high reliability. At the same time, it meets the lead-free and RoHS standards, meeting environmental protection requirements. In addition, it has excellent switching characteristics with short switching delay times. For example, the typical turn-on delay time is 20 ns, and the typical turn-off delay time is 45 ns, enabling fast switching actions and enhancing the overall circuit performance.

ONSemi  NTF3055-100T1G’s Applications

ONSemi's NTF3055-100T1G has a wide range of applications in numerous fields. In the power management field, its low on-resistance characteristic can significantly reduce energy losses during power conversion. It is suitable for various low-voltage power modules, ensuring efficient and stable power output. In terms of motor drive, relying on its excellent switching characteristics, it can precisely control the speed and direction of the motor. It can be applied to small power tools, automotive cooling fans and other devices that require high precision in motor control. In signal processing circuits, it can be used as a high-speed switching element, quickly responding to signal changes and achieving efficient signal switching and processing. It is often used in signal modulation and demodulation circuits of communication devices. In addition, due to its compliance with environmental protection standards, it can also play a role in the charging circuits of consumer electronics products such as smartphones and tablets, ensuring the safety and efficiency of the charging process. Whether it is a scenario with requirements for performance, environmental protection, or space layout, NTF3055-100T1G can provide reliable solutions.

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ONSemi NTF3055-100T1G’s Attributes

StatusActiveCompliancePbAHP
Package TypeSOT-223-4 / TO-261-4DCase Outline0.0318
MSL Type1MSL Temp (°C)260
Container TypeREELContainer Qty.1000
ON TargetNChannel PolarityN-Channel
ConfigurationSingleV(BR)DSS Min (V)60
VGS Max (V)20VGS(th) Max (V)4
ID Max (A)3PD Max (W)2.1
RDS(on) Max @ VGS = 10 V (mΩ)110Qg Typ @ VGS = 10 V (nC)11
Ciss Typ (pF)324Pricing ($/Unit)$0.3569


ONSemi  NTF3055-100T1G’s Datasheet

 

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ONSemi  NTF3055-100T1G’s Category - MOSFETs

ONSemi's NTF3055-100T1G, as an N-channel power MOSFET, belongs to the category of enhancement-mode MOSFETs and demonstrates its unique advantages in numerous application scenarios. In terms of electrical performance, as mentioned before, it has excellent drain current carrying capacity. The drain-source voltage is also suitable for common low-voltage circuits, and its extremely low static drain-source on-resistance makes it perform remarkably well in terms of conduction loss, meeting the high-efficiency requirements of MOSFETs in power applications. Its SOT-223 packaging form not only conforms to the miniaturization trend of modern electronic devices but also facilitates installation on various circuit boards, making compact applications possible.


When considering the purchase of a MOSFET similar to NTF3055-100T1G, the characteristic of its N-channel determines that it is suitable for low-side switching scenarios. For example, in conventional power applications where it is grounded and the lead is connected to the main line voltage, it can meet the voltage transmission required for device switching. When evaluating the performance of NTF3055-100T1G, the general methods for testing MOSFETs described above can be adopted. When checking the diode voltage drop, if the value is outside the range of 0.4V - 0.9V, one should be vigilant that the device may be defective. When testing the resistance, a relatively large resistance should be presented between the drain and the source. If using a digital multimeter for testing, by following the steps such as connecting the source to the negative (-) lead of the multimeter, holding the device while avoiding contact with metal test probe components and terminals, connecting the positive lead of the multimeter to the gate, setting the probe to the drain, and applying a little pressure between the source and the gate, a preliminary evaluation of its performance can be carried out to ensure that the device can operate stably and reliably in practical applications.

NTF3055-100T1G vs NTF6P02T3G


Parts

                      

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          NTF3055-100T1G +BOM

                  

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                    NTF6P02T3G +BOM

ManufacturerONOnsemi
PackageSOT223 - 4SOT - 223 - 4
DescriptionThree - pin SOT - 223 N - channel MOSFET Transistor with a 3 A dc and 60 V dc capacity

P - channel MOSFET Transistorwith - 20V voltage rating, 8.4A current, and 3 - pin SOT - 223

Stock16513875
Part StatusActiveActive
CompliancePbAHPPbAHP
Case Outline0.03180.0318
MSL Type11
MSL Temp (°C)260260
Container TypeREELREEL
Container Qty.10004000
ON TargetNY
Channel PolarityN - ChannelP - Channel
ConfigurationSingleSingle
V(BR)DSS Min (V)60- 20
VGS Max (V)208
VGS(th) Max (V)4- 1
ID Max (A)3- 10
PD Max (W)2.11.8
Qg Typ @ VGS = 10 V (nC)1115
Ciss Typ (pF)324900
Pricing ($/Unit)$0.3599$0.5334
RDS(on) Max @ VGS = 10 V (mΩ)110-
RDS(on) Max @ VGS = 2.5 V (mΩ)-70
RDS(on) Max @ VGS = 4.5 V (mΩ)-50

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Product information is from SIC Electronics Limited. If you are interested in the product or require product parameters, you can contact us online at any time or send us an email: sales@sic-components.com.
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