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Discrete Semiconductor Products(13)

Image Product Number Pricing(USD) Quantity ECAD Quantity Available Weight(Kg) Mfr Series Package Product Status Operating Temperature Mounting Type Package / Case Technology Supplier Device Package DataSheet RoHS Status Moisture Sensitivity Level (MSL) Other Names ECCN HTSUS Standard Package Speed FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Diode Configuration Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) (per Diode) Voltage - Forward (Vf) (Max) @ If Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Operating Temperature - Junction Current - Average Rectified (Io) Capacitance @ Vr, F
IV1D12010O2 Inventchip IV1D12010O2 11.0300
RFQ
 ECAD 190 0.00000000 Inventchip - Tube Active Through Hole TO-220-2 SiC (Silicon Carbide) Schottky TO-220-2 download ROHS3 Compliant 1 (Unlimited) 4084-IV1D12010O2 EAR99 8541.10.0080 50 No Recovery Time > 500mA (Io) 1200 V 1.8 V @ 10 A 0 ns 50 µA @ 1200 V -55°C ~ 175°C 28A 575pF @ 1V, 1MHz
IV1D12020T3 Inventchip IV1D12020T3 17.9500
RFQ
 ECAD 120 0.00000000 Inventchip - Tube Active Through Hole TO-247-3 SiC (Silicon Carbide) Schottky TO-247-3 download ROHS3 Compliant 1 (Unlimited) 4084-IV1D12020T3 EAR99 30 No Recovery Time > 500mA (Io) 1 Pair Common Cathode 1200 V 30A (DC) 1.8 V @ 20 A 0 ns 100 µA @ 1200 V -55°C ~ 175°C
IV1Q12050T4 Inventchip IV1Q12050T4 38.5000
RFQ
 ECAD 4491 0.00000000 Inventchip - Tube Active -55°C ~ 175°C (TJ) Through Hole TO-247-4 SiCFET (Silicon Carbide) TO-247-4 download ROHS3 Compliant 1 (Unlimited) 4084-IV1Q12050T4 EAR99 8541.29.0095 30 N-Channel 1200 V 58A (Tc) 20V 65mOhm @ 20A, 20V 3.2V @ 6mA 120 nC @ 20 V +20V, -5V 2750 pF @ 800 V - 344W (Tc)
IV1D12010T2 Inventchip IV1D12010T2 11.0300
RFQ
 ECAD 110 0.00000000 Inventchip - Tube Active Through Hole TO-247-2 SiC (Silicon Carbide) Schottky TO-247-2 download ROHS3 Compliant 1 (Unlimited) 4084-IV1D12010T2 EAR99 30 No Recovery Time > 500mA (Io) 1200 V 1.8 V @ 10 A 0 ns 50 µA @ 1200 V -55°C ~ 175°C 30A 575pF @ 1V, 1MHz
IV1D06006P3 Inventchip IV1D06006P3 4.2300
RFQ
 ECAD 2 0.00000000 Inventchip - Tape & Reel (TR) Active Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 SiC (Silicon Carbide) Schottky TO-252-3 download ROHS3 Compliant 3 (168 Hours) EAR99 8541.10.0080 2,500 No Recovery Time > 500mA (Io) 650 V 1.65 V @ 6 A 0 ns 10 µA @ 650 V -55°C ~ 175°C 16.7A 224pF @ 1V, 1MHz
IV1Q12050T3 Inventchip IV1Q12050T3 37.4900
RFQ
 ECAD 3 0.00000000 Inventchip - Tube Active -55°C ~ 175°C (TJ) Through Hole TO-247-3 SiCFET (Silicon Carbide) TO-247-3 download ROHS3 Compliant 1 (Unlimited) 4084-IV1Q12050T3 EAR99 8541.29.0095 30 N-Channel 1200 V 58A (Tc) 20V 65mOhm @ 20A, 20V 3.2V @ 6mA 120 nC @ 20 V +20V, -5V 2770 pF @ 800 V - 327W (Tc)
IV1D12020T2 Inventchip IV1D12020T2 17.9500
RFQ
 ECAD 120 0.00000000 Inventchip - Tube Active Through Hole TO-247-2 SiC (Silicon Carbide) Schottky TO-247-2 download ROHS3 Compliant 1 (Unlimited) 4084-IV1D12020T2 EAR99 30 No Recovery Time > 500mA (Io) 1200 V 1.8 V @ 20 A 0 ns 120 µA @ 1200 V -55°C ~ 175°C 54A 1114pF @ 1V, 1MHz
IV1D12015T2 Inventchip IV1D12015T2 13.6300
RFQ
 ECAD 120 0.00000000 Inventchip - Tube Active Through Hole TO-247-2 SiC (Silicon Carbide) Schottky TO-247-2 download ROHS3 Compliant 1 (Unlimited) 4084-IV1D12015T2 EAR99 30 No Recovery Time > 500mA (Io) 1200 V 1.8 V @ 15 A 0 ns 80 µA @ 1200 V -55°C ~ 175°C 44A 888pF @ 1V, 1MHz
IV1D12030U3 Inventchip IV1D12030U3 23.8500
RFQ
 ECAD 110 0.00000000 Inventchip - Tube Active Through Hole TO-247-3 SiC (Silicon Carbide) Schottky TO-247-3 download ROHS3 Compliant 1 (Unlimited) 4084-IV1D12030U3 EAR99 30 No Recovery Time > 500mA (Io) 1 Pair Common Cathode 1200 V 44A (DC) 1.8 V @ 15 A 0 ns 80 µA @ 1200 V -55°C ~ 175°C
IV1D06006O2 Inventchip IV1D06006O2 4.0900
RFQ
 ECAD 136 0.00000000 Inventchip - Tube Active Through Hole TO-220-2 SiC (Silicon Carbide) Schottky TO-220-2 download ROHS3 Compliant 1 (Unlimited) 4084-IV1D06006O2 EAR99 8541.10.0080 50 No Recovery Time > 500mA (Io) 650 V 1.65 V @ 6 A 0 ns 10 µA @ 650 V -55°C ~ 175°C 17.4A 212pF @ 1V, 1MHz
IV1D12040U2 Inventchip IV1D12040U2 27.8300
RFQ
 ECAD 120 0.00000000 Inventchip - Tube Active Through Hole TO-247-2 SiC (Silicon Carbide) Schottky TO-247-2 download ROHS3 Compliant 1 (Unlimited) 4084-IV1D12040U2 EAR99 30 No Recovery Time > 500mA (Io) 1 Pair Common Cathode 1200 V 102A (DC) 1.8 V @ 40 A 0 ns 200 µA @ 1200 V -55°C ~ 175°C
IV1D12005O2 Inventchip IV1D12005O2 6.1300
RFQ
 ECAD 164 0.00000000 Inventchip - Tube Active Through Hole TO-220-2 SiC (Silicon Carbide) Schottky TO-220-2 download ROHS3 Compliant 1 (Unlimited) 4084-IV1D12005O2 EAR99 8541.10.0080 50 No Recovery Time > 500mA (Io) 1200 V 1.8 V @ 5 A 0 ns 30 µA @ 1200 V -55°C ~ 175°C 17A 320pF @ 1V, 1MHz
IV1Q12160T4 Inventchip IV1Q12160T4 18.7400
RFQ
 ECAD 106 0.00000000 Inventchip - Tube Active -55°C ~ 175°C (TJ) Through Hole TO-247-4 SiCFET (Silicon Carbide) TO-247-4 download ROHS3 Compliant 1 (Unlimited) 4084-IV1Q12160T4 EAR99 30 N-Channel 1200 V 20A (Tc) 20V 195mOhm @ 10A, 20V 2.9V @ 1.9mA 43 nC @ 20 V +20V, -5V 885 pF @ 800 V - 138W (Tc)
  • Daily average RFQ Volume

    2000+

    Daily average RFQ Volume

  • Standard Product Unit

    30,000,000

    Standard Product Unit

  • Worldwide Manufacturers

    2800+

    Worldwide Manufacturers

  • In-stock Warehouse

    15,000 m2

    In-stock Warehouse

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AD9208BBPZ-3000

196-LFBGA Exposed Pad

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