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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Technology | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
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IV1D12020T3 | 17.9500 | ![]() |
120 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D12020T3 | EAR99 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 30A (DC) | 1.8 V @ 20 A | 0 ns | 100 µA @ 1200 V | -55°C ~ 175°C | ||||||||||||||||
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IV1D12010O2 | 11.0300 | ![]() |
190 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D12010O2 | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 28A | 575pF @ 1V, 1MHz | |||||||||||||||
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IV1D12030U3 | 23.8500 | ![]() |
110 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-247-3 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D12030U3 | EAR99 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 44A (DC) | 1.8 V @ 15 A | 0 ns | 80 µA @ 1200 V | -55°C ~ 175°C | ||||||||||||||||
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IV1Q12050T3 | 37.4900 | ![]() |
3 | 0.00000000 | Inventchip | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247-3 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1Q12050T3 | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 58A (Tc) | 20V | 65mOhm @ 20A, 20V | 3.2V @ 6mA | 120 nC @ 20 V | +20V, -5V | 2770 pF @ 800 V | - | 327W (Tc) | |||||||||||
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IV1Q12050T4 | 38.5000 | ![]() |
4491 | 0.00000000 | Inventchip | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1Q12050T4 | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 58A (Tc) | 20V | 65mOhm @ 20A, 20V | 3.2V @ 6mA | 120 nC @ 20 V | +20V, -5V | 2750 pF @ 800 V | - | 344W (Tc) | |||||||||||
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IV1D12010T2 | 11.0300 | ![]() |
110 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D12010T2 | EAR99 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 30A | 575pF @ 1V, 1MHz | ||||||||||||||||
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IV1D12015T2 | 13.6300 | ![]() |
120 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D12015T2 | EAR99 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 15 A | 0 ns | 80 µA @ 1200 V | -55°C ~ 175°C | 44A | 888pF @ 1V, 1MHz | ||||||||||||||||
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IV1D12020T2 | 17.9500 | ![]() |
120 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D12020T2 | EAR99 | 30 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 20 A | 0 ns | 120 µA @ 1200 V | -55°C ~ 175°C | 54A | 1114pF @ 1V, 1MHz | ||||||||||||||||
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IV1D06006P3 | 4.2300 | ![]() |
2 | 0.00000000 | Inventchip | - | Tape & Reel (TR) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | SiC (Silicon Carbide) Schottky | TO-252-3 | download | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | 1.65 V @ 6 A | 0 ns | 10 µA @ 650 V | -55°C ~ 175°C | 16.7A | 224pF @ 1V, 1MHz | ||||||||||||||||
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IV1Q12160T4 | 18.7400 | ![]() |
106 | 0.00000000 | Inventchip | - | Tube | Active | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | SiCFET (Silicon Carbide) | TO-247-4 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1Q12160T4 | EAR99 | 30 | N-Channel | 1200 V | 20A (Tc) | 20V | 195mOhm @ 10A, 20V | 2.9V @ 1.9mA | 43 nC @ 20 V | +20V, -5V | 885 pF @ 800 V | - | 138W (Tc) | ||||||||||||
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IV1D12040U2 | 27.8300 | ![]() |
120 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-247-2 | SiC (Silicon Carbide) Schottky | TO-247-2 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D12040U2 | EAR99 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 102A (DC) | 1.8 V @ 40 A | 0 ns | 200 µA @ 1200 V | -55°C ~ 175°C | ||||||||||||||||
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IV1D12005O2 | 6.1300 | ![]() |
164 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D12005O2 | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 1200 V | 1.8 V @ 5 A | 0 ns | 30 µA @ 1200 V | -55°C ~ 175°C | 17A | 320pF @ 1V, 1MHz | |||||||||||||||
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IV1D06006O2 | 4.0900 | ![]() |
136 | 0.00000000 | Inventchip | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2 | download | ROHS3 Compliant | 1 (Unlimited) | 4084-IV1D06006O2 | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.65 V @ 6 A | 0 ns | 10 µA @ 650 V | -55°C ~ 175°C | 17.4A | 212pF @ 1V, 1MHz |
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