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Discrete Semiconductor Products(1242)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Supplier Device Package | DataSheet | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | Current - Hold (Ih) (Max) | Triac Type | Voltage - Off State | Current - On State (It (RMS)) (Max) | Voltage - Gate Trigger (Vgt) (Max) | Current - Non Rep. Surge 50, 60Hz (Itsm) | Current - Gate Trigger (Igt) (Max) | Voltage - On State (Vtm) (Max) | Current - On State (It (AV)) (Max) | Current - Off State (Max) | SCR Type | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
WN3S30H100CQ | 0.8900 |  |
5 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-3 | WN3S30 | Schottky | TO-220AB | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 100 V | 15A | 710 mV @ 15 A | 50 µA @ 100 V | 150°C | ||||||||||||||||||
 |
BT151Y-650LTFQ | 0.7300 | |
6 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Isolated Tab | BT151 | TO-220AB | download | 1 (Unlimited) | EAR99 | 8541.30.0080 | 50 | 20 mA | 650 V | 12 A | 1 V | 120A, 132A | 5 mA | 1.5 V | 7.5 A | 10 µA | Standard Recovery | |||||||||||||||
 |
WNSC6D01650MBJ | 1.6700 | |
9 | 0.00000000 | WeEn Semiconductors | - | Tape & Reel (TR) | Active | Surface Mount | DO-214AA, SMB | WNSC6 | SiC (Silicon Carbide) Schottky | SMB | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | No Recovery Time > 500mA (Io) | 650 V | 1.4 V @ 1 A | 0 ns | 20 µA @ 650 V | 175°C | 1A | 130pF @ 1V, 1MHz | |||||||||||||||||
 |
WN3S10H150CXQ | 0.6600 | |
5 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-3 Full Pack, Isolated Tab | WN3S10 | Schottky | TO-220F | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 150 V | 5A | 1 V @ 5 A | 50 µA @ 150 V | 150°C | ||||||||||||||||||
 |
WN3S10H150CQ | 0.6200 | |
5 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-3 | WN3S10 | Schottky | TO-220AB | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 150 V | 5A | 1 V @ 5 A | 50 µA @ 150 V | 150°C | ||||||||||||||||||
 |
WND10P08YQ | 0.9500 | |
6 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-2 | WND10 | Standard | IITO-220-2 | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | Standard Recovery >500ns, > 200mA (Io) | 800 V | 1.3 V @ 10 A | 10 µA @ 800 V | 150°C | 10A | - | ||||||||||||||||||
|
WNSC2D03650MBJ | 1.6700 | |
11 | 0.00000000 | WeEn Semiconductors | - | Tape & Reel (TR) | Active | Surface Mount | DO-214AA, SMB | WNSC2 | SiC (Silicon Carbide) Schottky | SMB | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 3 A | 0 ns | 20 µA @ 650 V | 175°C | 3A | 130pF @ 1V, 1MHz | |||||||||||||||||
|
BTA202-1000CTQP | 0.4500 | |
10 | 0.00000000 | WeEn Semiconductors | - | Tape & Reel (TR) | Active | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | BTA202 | TO-92-3 | download | 1 (Unlimited) | EAR99 | 8541.30.0080 | 2,000 | Single | 40 mA | Alternistor - Snubberless | 1 kV | 2 A | 1 V | 25A, 27.5A | 35 mA | |||||||||||||||||
|
WN3S30H100CXQ | 0.9100 | |
5 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-3 Full Pack, Isolated Tab | WN3S30 | Schottky | TO-220F | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 100 V | 15A | 710 mV @ 15 A | 50 µA @ 100 V | 150°C | ||||||||||||||||||
|
WN3S20H100CXQ | 0.7500 | |
5 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-3 Full Pack, Isolated Tab | WN3S20 | Schottky | TO-220F | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 100 V | 10A | 750 mV @ 10 A | 50 µA @ 100 V | 150°C | ||||||||||||||||||
| WNSC6D20650CW6Q | 5.3200 | |
465 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-247-3 | WNSC6 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 20A | 1.45 V @ 10 A | 0 ns | 50 µA @ 650 V | 175°C | ||||||||||||||||||
|
WN3S20H150CQ | 0.7500 | |
5 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-3 | WN3S20 | Schottky | TO-220AB | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 150 V | 10A | 1.1 V @ 10 A | 50 µA @ 150 V | 150°C | ||||||||||||||||||
|
BTA202X-1000ETQ | 0.6500 | |
6 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | BTA202 | TO-220F | download | 1 (Unlimited) | EAR99 | 8541.30.0080 | 50 | Single | 25 mA | Alternistor - Snubberless | 1 kV | 2 A | 1 V | 25A, 27.5A | 10 mA | |||||||||||||||||
|
WN3S30100CQ | 0.8300 | |
6 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-3 | WN3S301 | Schottky | TO-220AB | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 100 V | 15A | 770 mV @ 15 A | 50 µA @ 100 V | 150°C | ||||||||||||||||||
 |
WNSC6D16650B6J | 4.3700 | |
4 | 0.00000000 | WeEn Semiconductors | - | Tape & Reel (TR) | Active | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | WNSC6 | SiC (Silicon Carbide) Schottky | D2PAK | download | 3 (168 Hours) | EAR99 | 8541.10.0080 | 800 | No Recovery Time > 500mA (Io) | 650 V | 1.45 V @ 16 A | 0 ns | 80 µA @ 650 V | 175°C | 16A | 780pF @ 1V, 1MHz | |||||||||||||||||
|
WN3S20H100CQ | 0.7000 | |
6 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-3 | WN3S20 | Schottky | TO-220AB | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 100 V | 10A | 750 mV @ 10 A | 50 µA @ 100 V | 150°C | ||||||||||||||||||
|
WNSC2D401200CW6Q | 6.9000 | |
9359 | 0.00000000 | WeEn Semiconductors | - | Tape & Reel (TR) | Active | Through Hole | TO-247-3 | WNSC2 | SiC (Silicon Carbide) Schottky | TO-247-3 | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 600 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 1200 V | 40A | 1.8 V @ 20 A | 0 ns | 200 µA @ 2000 V | 175°C | |||||||||||||||||
|
WNSC5D106506Q | - | |
7918 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-2 | WNSC5 | SiC (Silicon Carbide) Schottky | TO-220AC | - | 1740-WNSC5D106506Q | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 10A | 323pF @ 1V, 1MHz | |||||||||||||||||
|
WNSC5D126506Q | - | |
3206 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-2 | WNSC5 | SiC (Silicon Carbide) Schottky | TO-220AC | - | 1740-WNSC5D126506Q | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 12 A | 0 ns | 60 µA @ 650 V | -55°C ~ 175°C | 12A | 420pF @ 1V, 1MHz | |||||||||||||||||
|
WNSC5D12650T6J | - | |
4059 | 0.00000000 | WeEn Semiconductors | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | WNSC5 | SiC (Silicon Carbide) Schottky | 5-DFN (8x8) | - | 1740-WNSC5D12650T6JTR | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 12 A | 0 ns | 60 µA @ 650 V | -55°C ~ 175°C | 12A | 420pF @ 1V, 1MHz | |||||||||||||||||
|
WNSC5D206506Q | - | |
6400 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-2 | WNSC5 | SiC (Silicon Carbide) Schottky | TO-220AC | - | 1740-WNSC5D206506Q | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 20 A | 0 ns | 100 µA @ 650 V | -55°C ~ 175°C | 20A | 640pF @ 1V, 1MHz | |||||||||||||||||
|
WNSC5D046506Q | - | |
8122 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-220-2 | WNSC5 | SiC (Silicon Carbide) Schottky | TO-220AC | - | 1740-WNSC5D046506Q | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 4 A | 0 ns | 20 µA @ 650 V | -55°C ~ 175°C | 4A | 138pF @ 1V, 1MHz | |||||||||||||||||
|
WNSC5D06650D6J | - | |
4757 | 0.00000000 | WeEn Semiconductors | - | Tape & Reel (TR) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | WNSC5 | SiC (Silicon Carbide) Schottky | DPAK | - | 1740-WNSC5D06650D6JTR | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 6 A | 0 ns | 30 µA @ 650 V | -55°C ~ 175°C | 6A | 201pF @ 1V, 1MHz | |||||||||||||||||
|
WNSC5D16650CW6Q | - | |
7644 | 0.00000000 | WeEn Semiconductors | - | Tube | Active | Through Hole | TO-247-3 | WNSC5 | SiC (Silicon Carbide) Schottky | TO-247-3 | - | 1740-WNSC5D16650CW6Q | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 16A | 1.7 V @ 8 A | 0 ns | 40 µA @ 650 V | -55°C ~ 175°C | |||||||||||||||||
|
WNSC5D10650T6J | - | |
7976 | 0.00000000 | WeEn Semiconductors | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | WNSC5 | SiC (Silicon Carbide) Schottky | 5-DFN (8x8) | - | 1740-WNSC5D10650T6JTR | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 10A | 323pF @ 1V, 1MHz | |||||||||||||||||
|
WNSC5D04650T6J | - | |
6725 | 0.00000000 | WeEn Semiconductors | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | WNSC5 | SiC (Silicon Carbide) Schottky | 5-DFN (8x8) | - | 1740-WNSC5D04650T6JTR | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 4 A | 0 ns | 20 µA @ 650 V | -55°C ~ 175°C | 4A | 138pF @ 1V, 1MHz | |||||||||||||||||
|
WNSC5D10650D6J | - | |
7153 | 0.00000000 | WeEn Semiconductors | - | Tape & Reel (TR) | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | WNSC5 | SiC (Silicon Carbide) Schottky | DPAK | - | 1740-WNSC5D10650D6JTR | EAR99 | 8541.10.0080 | 1 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 10 A | 0 ns | 50 µA @ 650 V | -55°C ~ 175°C | 10A | 323pF @ 1V, 1MHz | |||||||||||||||||
|
WNSC2D101200D6J | 1.3300 | |
8173 | 0.00000000 | WeEn Semiconductors | - | Bulk | Active | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | WNSC2 | SiC (Silicon Carbide) Schottky | DPAK | download | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 1200 V | 1.6 V @ 10 A | 0 ns | 50 µA @ 1200 V | -55°C ~ 175°C | 10A | 481pF @ 1V, 1MHz | ||||||||||||||||||
|
BYV30JT-600PMQ | 0.7721 | |
9894 | 0.00000000 | WeEn Semiconductors | - | Bulk | Active | Through Hole | TO-3P-3, SC-65-3 | BYV30 | Standard | TO-3PF | - | EAR99 | 8541.10.0080 | 480 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 1.8 V @ 30 A | 65 ns | 10 µA @ 600 V | 175°C | 30A | - | ||||||||||||||||||
|
WB30FC120ALZ | 1.2113 | |
5763 | 0.00000000 | WeEn Semiconductors | - | Bulk | Active | Surface Mount | Die | WB30 | Standard | Wafer | - | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 1200 V | 3.5 V @ 30 A | 65 ns | 250 µA @ 1200 V | 175°C | 30A | - |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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