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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SSM6J414TU,LF | 0.4900 |  |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SSM6J414 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 22.5mOhm @ 6A, 4.5V | 1V @ 1mA | 23.1 nC @ 4.5 V | ±8V | 1650 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||||
 |
RN2910FE,LF(CT | 0.2600 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2910 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz | 4.7kOhms | - | ||||||||||||||||||||||||||||
 |
RN1111MFV,L3F | 0.1800 | |
1755 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1111 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 10 kOhms | ||||||||||||||||||||||||||||||
|
RN4981FE,LF(CT | 0.2600 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4981 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250MHz, 200MHz | 4.7kOhms | 4.7kOhms | ||||||||||||||||||||||||||||
 |
MT3S111(TE85L,F) | 0.6300 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MT3S111 | 700mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 12dB | 6V | 100mA | NPN | 200 @ 30mA, 5V | 11.5GHz | 1.2dB @ 1GHz | |||||||||||||||||||||||||||||
|
2SA1955FVBTPL3Z | 0.1200 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-723 | 2SA1955 | 100 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 12 V | 400 mA | 100nA (ICBO) | PNP | 250mV @ 10mA, 200mA | 300 @ 10mA, 2V | 130MHz | ||||||||||||||||||||||||||||||
 |
2SC2655-Y(T6ND1,AF | - | |
5882 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2655 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||||
|
SSM3J15FV,L3F | 0.2300 | |
55 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVI | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SOT-723 | SSM3J15 | MOSFET (Metal Oxide) | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | P-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | ±20V | 9.1 pF @ 3 V | - | 150mW (Ta) | ||||||||||||||||||||||||||
 |
2SK2866(F) | - | |
3399 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 | 2SK2866 | MOSFET (Metal Oxide) | TO-220AB | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 10A (Ta) | 10V | 750mOhm @ 5A, 10V | 4V @ 1mA | 45 nC @ 10 V | ±30V | 2040 pF @ 10 V | - | 125W (Tc) | ||||||||||||||||||||||||||
 |
RN1318(TE85L,F) | 0.2800 | |
470 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1318 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 47 kOhms | 10 kOhms | ||||||||||||||||||||||||||||
 |
RN2115,LF(CT | 0.2000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2115 | 100 mW | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 2.2 kOhms | 10 kOhms | ||||||||||||||||||||||||||||
 |
2SA2060(TE12L,F) | 0.6100 | |
827 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-243AA | 2SA2060 | 1 W | PW-MINI | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | 50 V | 2 A | 100nA (ICBO) | PNP | 200mV @ 33mA, 1A | 200 @ 300mA, 2V | - | |||||||||||||||||||||||||||||
 |
HN4C06J-BL(TE85L,F | 0.1088 | |
3999 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Not For New Designs | 150°C (TJ) | Surface Mount | SC-74A, SOT-753 | HN4C06 | 300mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 120V | 100mA | 100nA (ICBO) | 2 NPN (Dual) Common Emitter | 300mV @ 1mA, 10mA | 200 @ 2mA, 6V | 100MHz | |||||||||||||||||||||||||||||
|
RN2108(T5L,F,T) | 0.2800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2108 | 100 mW | SSM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200 MHz | 22 kOhms | 47 kOhms | ||||||||||||||||||||||||||||
 |
2SJ305TE85LF | 0.5400 | |
21 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SJ305 | MOSFET (Metal Oxide) | SC-59 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 200mA (Ta) | 2.5V | 4Ohm @ 50mA, 2.5V | - | ±20V | 92 pF @ 3 V | - | 200mW (Ta) | ||||||||||||||||||||||||||
|
1SS378(TE85L,F) | 0.3400 | |
55 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | 1SS378 | Schottky | SC-70 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Common Cathode | 10 V | 100mA | 500 mV @ 100 mA | 20 µA @ 10 V | 125°C (Max) | ||||||||||||||||||||||||||||||
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TPC8014(TE12L,Q,M) | - | |
2019 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8014 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 11A (Ta) | 4.5V, 10V | 14mOhm @ 5.5A, 10V | 2.5V @ 1mA | 39 nC @ 10 V | ±20V | 1860 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||||||
 |
CMS09(TE12L) | - | |
5132 | 0.00000000 | Toshiba Semiconductor and Storage | - | Digi-Reel® | Obsolete | Surface Mount | SOD-128 | CMS09 | Schottky | M-FLAT (2.4x3.8) | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 450 mV @ 1 A | 500 µA @ 30 V | -40°C ~ 150°C | 1A | - | ||||||||||||||||||||||||||||||
|
RN1967FE(TE85L,F) | - | |
7266 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOT-563, SOT-666 | RN1967 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 10kOhms | 47kOhms | |||||||||||||||||||||||||||||
 |
1SS272TE85LF | 0.4900 | |
11 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-61AA | 1SS272 | Standard | SC-61B | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 2 Independent | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | |||||||||||||||||||||||||||||
 |
TK40P03M1(T6RDS-Q) | - | |
6022 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK40P03 | MOSFET (Metal Oxide) | DPAK | download | RoHS Compliant | 1 (Unlimited) | TK40P03M1T6RDSQ | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 30 V | 40A (Ta) | 4.5V, 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5 nC @ 10 V | ±20V | 1150 pF @ 10 V | - | - | ||||||||||||||||||||||||
 |
CUS03(TE85L,Q,M) | - | |
8668 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-76, SOD-323 | CUS03 | Schottky | US-FLAT (1.25x2.5) | download | RoHS Compliant | CUS03(TE85LQM) | EAR99 | 8541.10.0080 | 4,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 520 mV @ 700 mA | 100 µA @ 40 V | -40°C ~ 150°C | 700mA | 45pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||
|
TPC8213-H(TE12LQ,M | - | |
7881 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8213 | MOSFET (Metal Oxide) | 450mW | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 60V | 5A | 50mOhm @ 2.5A, 10V | 2.3V @ 1mA | 11nC @ 10V | 625pF @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||
|
RN4905FE,LF(CT | 0.2700 | |
2228 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4905 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 2.2kOhms | 47kOhms | ||||||||||||||||||||||||||||
|
TPC8111(TE12L,Q,M) | - | |
7612 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8111 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 11A (Ta) | 4V, 10V | 12mOhm @ 5.5A, 10V | 2V @ 1mA | 107 nC @ 10 V | ±20V | 5710 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||||||
|
2SC2482(T6TOJS,F,M | - | |
3501 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2482 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 300 V | 100 mA | 1µA (ICBO) | NPN | 1V @ 1mA, 10mA | 30 @ 20mA, 10V | 50MHz | ||||||||||||||||||||||||||||||
 |
TK650A60F,S4X | 1.3400 | |
48 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK650A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 11A (Ta) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1.16mA | 34 nC @ 10 V | ±30V | 1320 pF @ 300 V | - | 45W (Tc) | |||||||||||||||||||||||||
|
CUS05(TE85L,Q,M) | - | |
2964 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-76, SOD-323 | CUS05 | Schottky | US-FLAT (1.25x2.5) | - | RoHS Compliant | CUS05(TE85LQM) | EAR99 | 8541.10.0080 | 4,000 | Fast Recovery =< 500ns, > 200mA (Io) | 20 V | 370 mV @ 700 mA | 1 mA @ 20 V | -40°C ~ 125°C | 1A | 40pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||
 |
1SS387,L3F | 0.2300 | |
107 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-79, SOD-523 | 1SS387 | Standard | ESC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 8,000 | Small Signal =< 200mA (Io), Any Speed | 80 V | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | 100mA | 0.5pF @ 0V, 1MHz | |||||||||||||||||||||||||||||
|
2SC2229(TE6SAN1F,M | - | |
3354 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2229 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 150 V | 50 mA | 100nA (ICBO) | NPN | 500mV @ 1mA, 10mA | 70 @ 10mA, 5V | 120MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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