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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SSM6K407TU,LF | 0.4900 |  |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6K407 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 2A (Ta) | 4V, 10V | 300mOhm @ 1A, 10V | 2V @ 1mA | 6 nC @ 10 V | ±20V | 150 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||||||
 |
SSM6P39TU,LF | 0.4800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6P39 | MOSFET (Metal Oxide) | 500mW (Ta) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 P-Channel (Dual) | 20V | 1.5A (Ta) | 213mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | 250pF @ 10V | Logic Level Gate, 1.8V Drive | ||||||||||||||||||||||
 |
SSM6P69NU,LF | 0.4300 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-WDFN Exposed Pad | SSM6P69 | MOSFET (Metal Oxide) | 1W (Ta) | 6-µDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 P-Channel (Dual) | 20V | 4A (Ta) | 45mOhm @ 3.5A, 10V | 1.2V @ 1mA | 6.74nC @ 4.5V | 480pF @ 10V | Logic Level Gate, 1.8V Drive | ||||||||||||||||||||||
 |
1SS322(TE85L,F) | 0.2800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | 1SS322 | Schottky | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 40 V | 600 mV @ 100 mA | 5 µA @ 40 V | 125°C (Max) | 100mA | 18pF @ 0V, 1MHz | |||||||||||||||||||||||||
 |
RN1701,LF | 0.3000 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | RN1701 | 200mW | USV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250MHz | 4.7kOhms | 4.7kOhms | |||||||||||||||||||||||
 |
RN1711JE(TE85L,F) | 0.4100 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN1711 | 100mW | ESV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 10kOhms | - | |||||||||||||||||||||||
|
RN2701,LF | 0.3000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | RN2701 | 200mW | USV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 200MHz | 4.7kOhms | 4.7kOhms | |||||||||||||||||||||||
|
RN2705,LF | 0.3000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | RN2705 | 200mW | USV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 2.2kOhms | 47kOhms | |||||||||||||||||||||||
|
RN2706,LF | 0.3000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | RN2706 | 200mW | USV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 4.7kOhms | 47kOhms | |||||||||||||||||||||||
 |
RN2908,LF(CT | 0.2700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2908 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 22kOhms | 47kOhms | |||||||||||||||||||||||
|
RN4903,LF(CT | 0.2800 | |
3539 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4903 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz, 250MHz | 22kOhms | 22kOhms | |||||||||||||||||||||||
|
RN1303,LF | 0.1800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1303 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250 MHz | 22 kOhms | 22 kOhms | |||||||||||||||||||||||
 |
RN2411,LF | 0.1800 | |
2606 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2411 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200 MHz | 10 kOhms | ||||||||||||||||||||||||
|
RN2416,LF | 0.1800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2416 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 4.7 kOhms | 10 kOhms | |||||||||||||||||||||||
|
RN2426(TE85L,F) | 0.4000 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2426 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 800 mA | 500nA | PNP - Pre-Biased | 250mV @ 1mA, 50mA | 90 @ 100mA, 1V | 200 MHz | 1 kOhms | 10 kOhms | |||||||||||||||||||||||
|
HN1C01FU-Y,LF | 0.2600 | |
39 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN1C01 | 200mW | US6 | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 150mA | 100nA (ICBO) | 2 NPN (Dual) | 250mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||
|
HN1C03FU-B,LF | 0.3800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN1C03 | 200mW | US6 | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 20V | 300mA | 100nA (ICBO) | 2 NPN (Dual) | 100mV @ 3mA, 30A | 350 @ 4mA, 2V | 30MHz | ||||||||||||||||||||||||
|
2SA1182-GR,LF | 0.3200 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA1182 | 150 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 30 V | 500 mA | 100nA (ICBO) | PNP | 250mV @ 10mA, 100mA | 200 @ 100mA, 1V | 200MHz | ||||||||||||||||||||||||
 |
2SA2215,LF | 0.5000 | |
4593 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 2SA2215 | 500 mW | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 20 V | 2.5 A | 100nA (ICBO) | PNP | 190mV @ 53mA, 1.6A | 200 @ 500mA, 2V | - | ||||||||||||||||||||||||
 |
XPN6R706NC,L1XHQ | 1.4200 | |
29 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | XPN6R706 | MOSFET (Metal Oxide) | 8-TSON Advance-WF (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 40A (Ta) | 4.5V, 10V | 6.7mOhm @ 20A, 10V | 2.5V @ 300µA | 35 nC @ 10 V | ±20V | 2000 pF @ 10 V | - | 840mW (Ta), 100W (Tc) | |||||||||||||||||||||
 |
XPH3R114MC,L1XHQ | 2.2500 | |
2968 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | XPH3R114 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 40 V | 100A (Ta) | 4.5V, 10V | 3.1mOhm @ 50A, 10V | 2.1V @ 1mA | 230 nC @ 10 V | +10V, -20V | 9500 pF @ 10 V | - | 960mW (Ta), 170W (Tc) | |||||||||||||||||||||
 |
TK1R5R04PB,LXGQ | 2.6900 | |
2158 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK1R5R04 | MOSFET (Metal Oxide) | D2PAK+ | download | 3 (168 Hours) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 40 V | 160A (Ta) | 6V, 10V | 1.5mOhm @ 80A, 10V | 3V @ 500µA | 103 nC @ 10 V | ±20V | 5500 pF @ 10 V | - | 205W (Tc) | |||||||||||||||||||||
 |
TRS10A65F,S1Q | 4.5900 | |
4279 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 Full Pack | TRS10A65 | SiC (Silicon Carbide) Schottky | TO-220F-2L | - | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 10 A | 0 ns | 50 µA @ 650 V | 175°C (Max) | 10A | 36pF @ 650V, 1MHz | ||||||||||||||||||||||||||
 |
TRS4E65F,S1Q | 2.3700 | |
174 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 | TRS4E65 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 4 A | 0 ns | 20 µA @ 650 V | 175°C (Max) | 4A | 16pF @ 650V, 1MHz | ||||||||||||||||||||||||||
 |
TK1K0A60F,S4X | 1.1100 | |
68 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK1K0A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 7.5A (Ta) | 10V | 1Ohm @ 3.8A, 10V | 4V @ 770µA | 24 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 40W (Tc) | ||||||||||||||||||||
 |
TK49N65W5,S1F | 11.8200 | |
45 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-247-3 | TK49N65 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 49.2A (Ta) | 10V | 57mOhm @ 24.6A, 10V | 4.5V @ 2.5mA | 185 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | ||||||||||||||||||||
|
TPH1R306P1,L1Q | 2.4900 | |
3131 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH1R306 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 100A (Tc) | 4.5V, 10V | 1.28mOhm @ 50A, 10V | 2.5V @ 1mA | 91 nC @ 10 V | ±20V | 8100 pF @ 30 V | - | 960mW (Ta), 170W (Tc) | |||||||||||||||||||||
 |
TPN4R806PL,L1Q | 0.9000 | |
4178 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN4R806 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 72A (Tc) | 4.5V, 10V | 3.5mOhm @ 36A, 10V | 2.5V @ 300µA | 29 nC @ 10 V | ±20V | 2770 pF @ 30 V | - | 630mW (Ta), 104W (Tc) | |||||||||||||||||||||
 |
TPN7R504PL,LQ | 0.6100 | |
521 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN7R504 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 38A (Tc) | 4.5V, 10V | 7.5mOhm @ 19A, 10V | 2.4V @ 200µA | 24 nC @ 10 V | ±20V | 2040 pF @ 20 V | - | 610mW (Ta), 61W (Tc) | |||||||||||||||||||||
 |
TK4R1A10PL,S4X | 2.0400 | |
40 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-220-3 Full Pack | TK4R1A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 80A (Tc) | 4.5V, 10V | 4.1mOhm @ 40A, 10V | 2.5V @ 1mA | 104 nC @ 10 V | ±20V | 6320 pF @ 50 V | - | 54W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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