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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RN4908FE,LXHF(CT | 0.3800 |  |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4908 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz, 250MHz | 22kOhms | 47kOhms | |||||||||||||||||||||||||||||||||
 |
RN1906,LXHF(CT | 0.3600 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1906 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 4.7kOhms | 47kOhms | |||||||||||||||||||||||||||||||||
 |
RN2310,LXHF | 0.3900 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2310 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200 MHz | 4.7 kOhms | ||||||||||||||||||||||||||||||||||
|
RN1302,LXHF | 0.3900 | |
222 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1302 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 10 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||||
|
RN4906,LXHF(CT | 0.4400 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4906 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz, 250MHz | 4.7kOhms | 47kOhms | |||||||||||||||||||||||||||||||||
|
RN4985,LXHF(CT | 0.4400 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4985 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 2.2kOhms | 47kOhms | |||||||||||||||||||||||||||||||||
|
RN4907,LXHF(CT | 0.4400 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4907 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz, 250MHz | 10kOhms | 47kOhms | |||||||||||||||||||||||||||||||||
|
RN1311,LXHF | 0.3900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1311 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 10 kOhms | ||||||||||||||||||||||||||||||||||
|
RN1301,LXHF | 0.3900 | |
11 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1301 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250 MHz | 4.7 kOhms | 4.7 kOhms | |||||||||||||||||||||||||||||||||
 |
SSM3K15CT,L3F | - | |
3038 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-101, SOT-883 | SSM3K15 | MOSFET (Metal Oxide) | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | ±20V | 7.8 pF @ 3 V | - | 100mW (Ta) | |||||||||||||||||||||||||||||||
|
2SA1586-Y(T5LND,F) | - | |
5318 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 100 mW | SC-70 | download | 1 (Unlimited) | 264-2SA1586-Y(T5LNDF)TR | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | PNP | 300mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||||||||||||
 |
SSM10N954L,EFF | 1.3600 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 10-SMD, No Lead | MOSFET (Metal Oxide) | TCSPAC-153001 | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 10,000 | N-Channel | 12 V | 13.5A (Ta) | 2.5V, 4.5V | 2.75mOhm @ 6A, 4.5V | 1.4V @ 1.11mA | 25 nC @ 4 V | ±8V | - | 800mW (Ta) | |||||||||||||||||||||||||||||||
 |
GT20N135SRA,S1E | 3.2800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-247-3 | Standard | 312 W | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | 300V, 40A, 39Ohm, 15V | - | 1350 V | 40 A | 80 A | 2.4V @ 15V, 40A | -, 700µJ (off) | 185 nC | - | |||||||||||||||||||||||||||||||
 |
TW060N120C,S1F | 19.8400 | |
4984 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 36A (Tc) | 18V | 78mOhm @ 18A, 18V | 5V @ 4.2mA | 46 nC @ 18 V | +25V, -10V | 1530 pF @ 800 V | - | 170W (Tc) | ||||||||||||||||||||||||||||||
|
TW030N120C,S1F | 34.4500 | |
119 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 60A (Tc) | 18V | 40mOhm @ 30A, 18V | 5V @ 13mA | 82 nC @ 18 V | +25V, -10V | 2925 pF @ 800 V | - | 249W (Tc) | ||||||||||||||||||||||||||||||
|
TW083N65C,S1F | 12.7900 | |
175 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 30A (Tc) | 18V | 113mOhm @ 15A, 18V | 5V @ 600µA | 28 nC @ 18 V | +25V, -10V | 873 pF @ 400 V | - | 111W (Tc) | ||||||||||||||||||||||||||||||
 |
TK190U65Z,RQ | 2.9200 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerSFN | MOSFET (Metal Oxide) | TOLL | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 15A (Ta) | 10V | 190mOhm @ 7.5A, 10V | 4V @ 610µA | 25 nC @ 10 V | ±30V | 1370 pF @ 300 V | - | 130W (Tc) | ||||||||||||||||||||||||||||||
|
TK155U65Z,RQ | 3.4000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerSFN | MOSFET (Metal Oxide) | TOLL | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 18A (Ta) | 10V | 155mOhm @ 9A, 10V | 4V @ 730µA | 29 nC @ 10 V | ±30V | 1635 pF @ 300 V | - | 150W (Tc) | ||||||||||||||||||||||||||||||
|
TPH3R70APL1,LQ | 1.7100 | |
4727 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerTDFN | TPH3R70 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | download | 1 (Unlimited) | 5,000 | N-Channel | 100 V | 170A (Ta), 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 45A, 10V | 2.5V @ 1mA | 67 nC @ 10 V | ±20V | 6300 pF @ 50 V | - | 3W (Ta), 210W (Tc) | ||||||||||||||||||||||||||||||||
|
TPH1500CNH1,LQ | 1.6600 | |
9158 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerTDFN | TPH1500 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | download | 1 (Unlimited) | 5,000 | N-Channel | 150 V | 74A (Ta), 38A (Tc) | 10V | 15.4mOhm @ 19A, 10V | 4V @ 1mA | ±20V | 2200 pF @ 75 V | - | 2.5W (Ta), 170W (Tc) | |||||||||||||||||||||||||||||||||
|
SSM14N956L,EFF | 1.3700 | |
10 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 14-SMD, No Lead | SSM14 | MOSFET (Metal Oxide) | 1.33W (Ta) | TCSPED-302701 | - | ROHS3 Compliant | 1 (Unlimited) | 10,000 | 2 N-Channel | 12V | 20A (Ta) | 1.35mOhm @ 10A, 4.5V | 1.4V @ 1.57mA | 76nC @ 4V | - | - | |||||||||||||||||||||||||||||||||
 |
SSM6L807R,LF | 0.5200 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6L807 | MOSFET (Metal Oxide) | 1.4W (Ta) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N and P-Channel | 30V | 4A (Ta) | 39.1mOhm @ 2A, 4.5V | 1V @ 1mA | 3.2nC @ 4.5V, 6.74nC @ 4.5V | 310pF @ 15V, 480pF @ 10V | Standard | |||||||||||||||||||||||||||||||
 |
SSM6J825R,LF | 0.4400 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J825 | MOSFET (Metal Oxide) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 4A (Ta) | 4V, 10V | 45mOhm @ 4A, 10V | 2V @ 250µA | 6.2 nC @ 4.5 V | +10V, -20V | 492 pF @ 10 V | - | 1.5W (Ta) | |||||||||||||||||||||||||||||
 |
SSM3K121TU | - | |
6715 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | MOSFET (Metal Oxide) | UFM | download | 264-SSM3K121TU | EAR99 | 8541.21.0095 | 1 | N-Channel | 20 V | 3.2A (Ta) | 1.5V, 4V | 48mOhm @ 2A, 4V | 1V @ 1mA | 5.9 nC @ 4 V | ±10V | 400 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||||||||||||
|
XPQ1R004PB,LXHQ | 3.0000 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerBSFN | XPQ1R004 | MOSFET (Metal Oxide) | L-TOGL™ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 40 V | 200A (Ta) | 6V, 10V | 1mOhm @ 100A, 10V | 3V @ 500µA | 84 nC @ 10 V | ±20V | 6890 pF @ 10 V | - | 230W (Tc) | |||||||||||||||||||||||||||||
|
XPQR3004PB,LXHQ | 6.7900 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerBSFN | XPQR3004 | MOSFET (Metal Oxide) | L-TOGL™ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 40 V | 400A (Ta) | 6V, 10V | 0.3mOhm @ 200A, 10V | 3V @ 1mA | 295 nC @ 10 V | ±20V | 26910 pF @ 10 V | - | 750W (Tc) | |||||||||||||||||||||||||||||
|
TRS4V65H,LQ | 1.8500 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | SiC (Silicon Carbide) Schottky | 4-DFN-EP (8x8) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | 1.34 V @ 4 A | 0 ns | 55 µA @ 650 V | 175°C | 4A | 263pF @ 1V, 1MHz | ||||||||||||||||||||||||||||||||||
|
TRS8V65H,LQ | 2.7700 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | SiC (Silicon Carbide) Schottky | 4-DFN-EP (8x8) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 8 A | 0 ns | 90 µA @ 650 V | 175°C | 8A | 520pF @ 1V, 1MHz | ||||||||||||||||||||||||||||||||||
|
TRS2E65H,S1Q | 1.5500 | |
300 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | ROHS3 Compliant | 1 (Unlimited) | 264-TRS2E65H,S1Q | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 2 A | 0 ns | 40 µA @ 650 V | 175°C | 2A | 135pF @ 1V, 1MHz | |||||||||||||||||||||||||||||||||
|
TRS6V65H,LQ | 2.3200 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | SiC (Silicon Carbide) Schottky | 4-DFN-EP (8x8) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 6 A | 0 ns | 70 µA @ 650 V | 175°C | 6A | 392pF @ 1V, 1MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
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