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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SA1680,T6F(J | - |  |
4464 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1680 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 120 @ 100mA, 2V | 100MHz | ||||||||||||||||||||||||||||
 |
CUS10F30,H3F | 0.3400 | |
43 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-76, SOD-323 | CUS10F30 | Schottky | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 500 mV @ 1 A | 50 µA @ 30 V | 125°C (Max) | 1A | 170pF @ 0V, 1MHz | ||||||||||||||||||||||||||||
 |
RN1415,LXHF | 0.3400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1415 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 2.2 kOhms | 10 kOhms | |||||||||||||||||||||||||||
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SSM3K121TU | - | |
6715 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | MOSFET (Metal Oxide) | UFM | download | 264-SSM3K121TU | EAR99 | 8541.21.0095 | 1 | N-Channel | 20 V | 3.2A (Ta) | 1.5V, 4V | 48mOhm @ 2A, 4V | 1V @ 1mA | 5.9 nC @ 4 V | ±10V | 400 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||||||
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2SA2060(TE12L,F) | 0.6100 | |
827 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-243AA | 2SA2060 | 1 W | PW-MINI | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | 50 V | 2 A | 100nA (ICBO) | PNP | 200mV @ 33mA, 1A | 200 @ 300mA, 2V | - | |||||||||||||||||||||||||||
 |
RN4604(TE85L,F) | 0.4800 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN4604 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 47kOhms | 47kOhms | ||||||||||||||||||||||||||
 |
RN1118(TE85L,F) | 0.3900 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1118 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 47 kOhms | 10 kOhms | |||||||||||||||||||||||||||
|
SSM3J168F,LF | 0.3700 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3J168 | MOSFET (Metal Oxide) | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 60 V | 400mA (Ta) | 4V, 10V | 1.9Ohm @ 100mA, 4.5V | 2V @ 1mA | 3 nC @ 10 V | +20V, -16V | 82 pF @ 10 V | - | 1.2W (Ta) | |||||||||||||||||||||||
 |
RN1102CT(TPL3) | - | |
2266 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN1102 | 50 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 20 V | 50 mA | 500nA | NPN - Pre-Biased | 150mV @ 250µA, 5mA | 60 @ 10mA, 5V | 10 kOhms | 10 kOhms | ||||||||||||||||||||||||||||
 |
TPCA8026(TE12L,Q,M | 1.8800 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8026 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 45A (Ta) | 4.5V, 10V | 2.2mOhm @ 23A, 10V | 2.5V @ 1mA | 113 nC @ 10 V | ±20V | 4200 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | |||||||||||||||||||||||
 |
RN4910FE,LXHF(CT | 0.3800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4910 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz, 250MHz | 4.7kOhms | - | |||||||||||||||||||||||||||
 |
2SC3265-Y,LF | 0.4400 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SC3265 | 200 mW | TO-236 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 25 V | 800 mA | 100nA (ICBO) | NPN | 400mV @ 20mA, 500mA | 160 @ 100mA, 1V | 120MHz | |||||||||||||||||||||||||||
 |
SSM6P35AFU,LF | 0.4300 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6P35 | MOSFET (Metal Oxide) | 285mW (Ta) | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 P-Channel (Dual) | 20V | 250mA (Ta) | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | - | 42pF @ 10V | Logic Level Gate, 1.2V Drive | |||||||||||||||||||||||||
|
2SC2229(TE6SAN1F,M | - | |
3354 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2229 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 150 V | 50 mA | 100nA (ICBO) | NPN | 500mV @ 1mA, 10mA | 70 @ 10mA, 5V | 120MHz | ||||||||||||||||||||||||||||
 |
TRS24N65D,S1F | - | |
3712 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | Through Hole | TO-247-3 | TRS24N | Schottky | TO-247 | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 30 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 650 V | 12A (DC) | 1.7 V @ 12 A | 90 µA @ 650 V | 175°C (Max) | ||||||||||||||||||||||||||||
 |
RN1116MFV,L3F | 0.1800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1116 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 4.7 kOhms | 10 kOhms | ||||||||||||||||||||||||||
 |
CMS06(TE12L,Q,M) | 0.5400 | |
60 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-128 | CMS06 | Schottky | M-FLAT (2.4x3.8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 370 mV @ 2 A | 3 mA @ 30 V | -40°C ~ 125°C | 2A | 130pF @ 10V, 1MHz | ||||||||||||||||||||||||||||
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TPHR9003NL,L1Q | 2.2100 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPHR9003 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 60A (Tc) | 4.5V, 10V | 0.9mOhm @ 30A, 10V | 2.3V @ 1mA | 74 nC @ 10 V | ±20V | 6900 pF @ 15 V | - | 1.6W (Ta), 78W (Tc) | |||||||||||||||||||||||
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TJ80S04M3L(T6L1,NQ | 1.2600 | |
5815 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ80S04 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 80A (Ta) | 6V, 10V | 5.2mOhm @ 40A, 10V | 3V @ 1mA | 158 nC @ 10 V | +10V, -20V | 7770 pF @ 10 V | - | 100W (Tc) | |||||||||||||||||||||||
 |
TRS10A65F,S1Q | 4.5900 | |
4279 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 Full Pack | TRS10A65 | SiC (Silicon Carbide) Schottky | TO-220F-2L | - | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.6 V @ 10 A | 0 ns | 50 µA @ 650 V | 175°C (Max) | 10A | 36pF @ 650V, 1MHz | |||||||||||||||||||||||||||||
|
2SA1298-Y,LF | 0.4200 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA1298 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 25 V | 800 mA | 100nA (ICBO) | PNP | 400mV @ 20mA, 500mA | 160 @ 100mA, 1V | 120MHz | |||||||||||||||||||||||||||
 |
2SK3565(Q,M) | - | |
8070 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSIV | Bulk | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SK3565 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 5A (Ta) | 10V | 2.5Ohm @ 3A, 10V | 4V @ 1mA | 28 nC @ 10 V | ±30V | 1150 pF @ 25 V | - | 45W (Tc) | |||||||||||||||||||||||
 |
XPN6R706NC,L1XHQ | 1.4200 | |
29 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | XPN6R706 | MOSFET (Metal Oxide) | 8-TSON Advance-WF (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 40A (Ta) | 4.5V, 10V | 6.7mOhm @ 20A, 10V | 2.5V @ 300µA | 35 nC @ 10 V | ±20V | 2000 pF @ 10 V | - | 840mW (Ta), 100W (Tc) | ||||||||||||||||||||||||
|
2SA1020-Y(T6CN,A,F | - | |
6615 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||
 |
2SK1829TE85LF | 0.0742 | |
2046 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Not For New Designs | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SK1829 | MOSFET (Metal Oxide) | SC-70 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 50mA (Ta) | 2.5V | 40Ohm @ 10mA, 2.5V | - | 10V | 5.5 pF @ 3 V | - | 100mW (Ta) | ||||||||||||||||||||||||
 |
TPN7R504PL,LQ | 0.6100 | |
521 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN7R504 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 38A (Tc) | 4.5V, 10V | 7.5mOhm @ 19A, 10V | 2.4V @ 200µA | 24 nC @ 10 V | ±20V | 2040 pF @ 20 V | - | 610mW (Ta), 61W (Tc) | ||||||||||||||||||||||||
 |
SSM6N39TU,LF | 0.4900 | |
7160 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6N39 | MOSFET (Metal Oxide) | 500mW | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 1.6A (Ta) | 119mOhm @ 1A, 4V | 1V @ 1mA | 7.5nC @ 4V | 260pF @ 10V | - | |||||||||||||||||||||||||
 |
2SC4793(F,M) | - | |
5677 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SC4793 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 500 | 230 V | 1 A | 1µA (ICBO) | NPN | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 100MHz | ||||||||||||||||||||||||||||
|
2SA1020-O,F(J | - | |
1486 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||
|
2SC2482(T6TOJS,F,M | - | |
3501 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2482 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 300 V | 100 mA | 1µA (ICBO) | NPN | 1V @ 1mA, 10mA | 30 @ 20mA, 10V | 50MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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