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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TK16A60W5,S4VX | 2.9700 |  |
50 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK16A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 1.5mA | 43 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 40W (Tc) | |||||||||||||||||||||||||||||
 |
2SC2655-Y(T6STL,FM | - | |
1155 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2655 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||||||||
|
TK10A60W5,S5VX | 2.0400 | |
32 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK10A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 9.7A (Ta) | 10V | 450mOhm @ 4.9A, 10V | 4.5V @ 500µA | 25 nC @ 10 V | ±30V | 720 pF @ 300 V | - | 30W (Tc) | |||||||||||||||||||||||||||||
 |
TK10V60W,LVQ | 1.6898 | |
2422 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | TK10V60 | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 88.3W (Tc) | |||||||||||||||||||||||||||||
 |
TDTA144E,LM | 0.1800 | |
3791 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TDTA144 | 320 mW | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 10mA | 88 @ 5mA, 5V | 250 MHz | 47 kOhms | |||||||||||||||||||||||||||||||||
 |
SSM6J771G,LF | 0.6700 | |
4667 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-UFBGA, WLCSP | SSM6J771 | MOSFET (Metal Oxide) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 5A (Ta) | 2.5V, 8.5V | 31mOhm @ 3A, 8.5V | 1.2V @ 1mA | 9.8 nC @ 4.5 V | ±12V | 870 pF @ 10 V | - | 1.2W (Ta) | ||||||||||||||||||||||||||||||
 |
RN1903,LF(CT | 0.2700 | |
55 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1903 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz | 22kOhms | 22kOhms | ||||||||||||||||||||||||||||||||
 |
CMZ24(TE12L,Q,M) | 0.5400 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | CMZ24 | 2 W | M-FLAT (2.4x3.8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1.2 V @ 200 mA | 10 µA @ 17 V | 24 V | 30 Ohms | |||||||||||||||||||||||||||||||||||
 |
XPW4R10ANB,L1XHQ | 2.3200 | |
22 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | -55°C ~ 175°C | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 8-DSOP Advance | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 70A | 6V, 10V | 4.1mOhm @ 35A, 10V | 3.5V @ 1mA | 75 nC @ 10 V | ±20V | 4970 pF @ 10 V | Standard | 170W (Tc) | ||||||||||||||||||||||||||||||
|
CRS05(TE85L,Q,M) | 0.1326 | |
9706 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRS05 | Schottky | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 450 mV @ 1 A | 200 µA @ 30 V | -40°C ~ 150°C | 1A | - | ||||||||||||||||||||||||||||||||||
 |
SSM3J355R,LF | 0.4200 | |
51 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3J355 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.8V, 4.5V | 30.1mOhm @ 4A, 4.5V | 1V @ 1mA | 16.6 nC @ 4.5 V | ±10V | 1030 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||||||||
|
CRF03(TE85L,Q,M) | - | |
5105 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOD-123F | CRF03 | Standard | S-FLAT (1.6x3.5) | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 2 V @ 700 mA | 100 ns | 50 µA @ 600 V | -40°C ~ 150°C | 700mA | - | ||||||||||||||||||||||||||||||||
 |
SSM3J118TU(TE85L) | 0.4000 | |
104 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | SSM3J118 | MOSFET (Metal Oxide) | UFM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 1.4A (Ta) | 4V, 10V | 240mOhm @ 650mA, 10V | - | ±20V | 137 pF @ 15 V | - | 500mW (Ta) | ||||||||||||||||||||||||||||||
 |
RN1702JE(TE85L,F) | 0.4700 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN1702 | 100mW | ESV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250MHz | 10kOhms | 10kOhms | ||||||||||||||||||||||||||||||||
 |
TK12P60W,RVQ | 1.0490 | |
4795 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK12P60 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 11.5A (Ta) | 10V | 340mOhm @ 5.8A, 10V | 3.7V @ 600µA | 25 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 100W (Tc) | |||||||||||||||||||||||||||||
|
CUS03(TE85L,Q,M) | - | |
8668 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-76, SOD-323 | CUS03 | Schottky | US-FLAT (1.25x2.5) | download | RoHS Compliant | CUS03(TE85LQM) | EAR99 | 8541.10.0080 | 4,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 520 mV @ 700 mA | 100 µA @ 40 V | -40°C ~ 150°C | 700mA | 45pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||
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2SC5088-O(TE85L,F) | - | |
8450 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | SC-82A, SOT-343 | 2SC5088 | 100mW | USQ | - | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 18dB | 12V | 80mA | NPN | 80 @ 20mA, 10V | 7GHz | 1dB @ 500MHz | ||||||||||||||||||||||||||||||||||
|
SSM3J377R,LF | 0.4100 | |
29 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | SSM3J377 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 3.9A (Ta) | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | +6V, -8V | 290 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||||||||
 |
RN2417(TE85L,F) | 0.2800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2417 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 200 MHz | 10 kOhms | 4.7 kOhms | |||||||||||||||||||||||||||||||||
 |
1SS300,LF | 0.2200 | |
127 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | 1SS300 | Standard | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Common Anode | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | |||||||||||||||||||||||||||||||||
 |
SSM6L40TU,LF | 0.4900 | |
62 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6L40 | MOSFET (Metal Oxide) | 500mW (Ta) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N and P-Channel | 30V | 1.6A (Ta), 1.4A (Ta) | 122mOhm @ 1A, 10V, 226mOhm @ 1A, 10V | 2.6V @ 1mA, 2V @ 1mA | 5.1nC @ 10V, 2.9nC @ 10V | 180pF @ 15V, 120pF @ 15V | Logic Level Gate, 4V Drive | |||||||||||||||||||||||||||||||
|
TK35A65W,S5X | 6.5000 | |
8817 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK35A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 35A (Ta) | 10V | 80mOhm @ 17.5A, 10V | 3.5V @ 2.1mA | 100 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 50W (Tc) | |||||||||||||||||||||||||||||
 |
TPH6R003NL,LQ | 0.9300 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH6R003 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 38A (Tc) | 4.5V, 10V | 6mOhm @ 19A, 10V | 2.3V @ 200µA | 17 nC @ 10 V | ±20V | 1400 pF @ 15 V | - | 1.6W (Ta), 34W (Tc) | |||||||||||||||||||||||||||||
 |
RN1103MFV,L3F(CT | 0.1800 | |
305 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1103 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 70 @ 10mA, 5V | 22 kOhms | 22 kOhms | ||||||||||||||||||||||||||||||||||
 |
TPH5R906NH,L1Q | 1.7200 | |
29 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH5R906 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 28A (Ta) | 10V | 5.9mOhm @ 14A, 10V | 4V @ 300µA | 38 nC @ 10 V | ±20V | 3100 pF @ 30 V | - | 1.6W (Ta), 57W (Tc) | |||||||||||||||||||||||||||||
|
2SC2229-Y(MIT,F,M) | - | |
4110 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2229 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 150 V | 50 mA | 100nA (ICBO) | NPN | 500mV @ 1mA, 10mA | 70 @ 10mA, 5V | 120MHz | ||||||||||||||||||||||||||||||||||
|
TPHR6503PL,L1Q | 2.0600 | |
51 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPHR6503 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 150A (Tc) | 4.5V, 10V | 0.65mOhm @ 50A, 10V | 2.1V @ 1mA | 110 nC @ 10 V | ±20V | 10000 pF @ 15 V | - | 960mW (Ta), 170W (Tc) | |||||||||||||||||||||||||||||
|
TPH1R306P1,L1Q | 2.4900 | |
3131 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH1R306 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 100A (Tc) | 4.5V, 10V | 1.28mOhm @ 50A, 10V | 2.5V @ 1mA | 91 nC @ 10 V | ±20V | 8100 pF @ 30 V | - | 960mW (Ta), 170W (Tc) | ||||||||||||||||||||||||||||||
 |
RN2906FE,LXHF(CT | 0.3800 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2906 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 4.7kOhms | 47kOhms | |||||||||||||||||||||||||||||||||
|
2SA1182-GR,LF | 0.3200 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA1182 | 150 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 30 V | 500 mA | 100nA (ICBO) | PNP | 250mV @ 10mA, 100mA | 200 @ 100mA, 1V | 200MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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