- RFQ
- BOM
-
Contact Us
Tel: +86-0755-83501315
Email: sales@sic-components.com
- Chinese
- English
- French
- German
- Portuguese
- Spanish
- Russian
- Japanese
- Korean
- Arabic
- Irish
- Greek
- Turkish
- Italian
- Danish
- Romanian
- Indonesian
- Czech
- Afrikaans
- Swedish
- Polish
- Basque
- Catalan
- Esperanto
- Hindi
- Lao
- Albanian
- Amharic
- Armenian
- Azerbaijani
- Belarusian
- Bengali
- Bosnian
- Bulgarian
- Cebuano
- Chichewa
- Corsican
- Croatian
- Dutch
- Estonian
- Filipino
- Finnish
- Frisian
- Galician
- Georgian
- Gujarati
- Haitian
- Hausa
- Hawaiian
- Hebrew
- Hmong
- Hungarian
- Icelandic
- Igbo
- Javanese
- Kannada
- Kazakh
- Khmer
- Kurdish
- Kyrgyz
- Latin
- Latvian
- Lithuanian
- Luxembou..
- Macedonian
- Malagasy
- Malay
- Malayalam
- Maltese
- Maori
- Marathi
- Mongolian
- Burmese
- Nepali
- Norwegian
- Pashto
- Persian
- Punjabi
- Serbian
- Sesotho
- Sinhala
- Slovak
- Slovenian
- Somali
- Samoan
- Scots Gaelic
- Shona
- Sindhi
- Sundanese
- Swahili
- Tajik
- Tamil
- Telugu
- Thai
- Ukrainian
- Urdu
- Uzbek
- Vietnamese
- Welsh
- Xhosa
- Yiddish
- Yoruba
- Zulu
- Kinyarwanda
- Tatar
- Oriya
- Turkmen
- Uyghur
Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Diode Type | Voltage - Peak Reverse (Max) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Capacitance Ratio Condition | Q @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
JDV2S41FS(TPL3) | - |  |
5763 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | 2-SMD, Flat Lead | JDV2S41 | fSC | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | 16pF @ 2V, 1MHz | Single | 15 V | - | - | ||||||||||||||||||||||||||||||||||
 |
2SK2145-Y(TE85L,F) | 0.6800 | |
26 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-74A, SOT-753 | 2SK2145 | 300 mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 13pF @ 10V | 1.2 mA @ 10 V | 200 mV @ 100 nA | ||||||||||||||||||||||||||||||||||
 |
2SK879-GR(TE85L,F) | 0.4200 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SK879 | 100 mW | USM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 8.2pF @ 10V | 2.6 mA @ 10 V | 400 mV @ 100 nA | ||||||||||||||||||||||||||||||||||
 |
SSM3K16FU,LF | 0.3000 | |
23 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVI | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SSM3K16 | MOSFET (Metal Oxide) | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | ±10V | 9.3 pF @ 3 V | - | 150mW (Ta) | ||||||||||||||||||||||||||||
 |
HN1D01F(TE85L,F) | 0.4700 | |
3088 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | HN1D01 | Standard | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 2 Pair Common Anode | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | |||||||||||||||||||||||||||||||
 |
TJ15S06M3L(T6L1,NQ | 1.3300 | |
2224 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ15S06 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 15A (Ta) | 6V, 10V | 50mOhm @ 7.5A, 10V | 3V @ 1mA | 36 nC @ 10 V | +10V, -20V | 1770 pF @ 10 V | - | 41W (Tc) | |||||||||||||||||||||||||||
 |
TK100E06N1,S1X | 2.7500 | |
30 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK100E06 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 100A (Ta) | 10V | 2.3mOhm @ 50A, 10V | 4V @ 1mA | 140 nC @ 10 V | ±20V | 10500 pF @ 30 V | - | 255W (Tc) | |||||||||||||||||||||||||||
 |
2SK2916(F) | - | |
6044 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SK2916 | MOSFET (Metal Oxide) | TO-3P(N)IS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 14A (Ta) | 10V | 400mOhm @ 7A, 10V | 4V @ 1mA | 58 nC @ 10 V | ±30V | 2600 pF @ 10 V | - | 80W (Tc) | ||||||||||||||||||||||||||||
 |
SSM6J401TU,LF | 0.4900 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J401 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 2.5A (Ta) | 4V, 10V | 73mOhm @ 2A, 10V | 2.6V @ 1mA | 16 nC @ 10 V | ±20V | 730 pF @ 15 V | - | 500mW (Ta) | |||||||||||||||||||||||||||
![S1PA7[UD] Toshiba Semiconductor and Storage](/image/catalog/product/700x700.png "S1PA7[UD] Toshiba Semiconductor and Storage") |
S1PA7[UD] | - | |
1361 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | - | 1 (Unlimited) | 190-S1PA7[UD] | EAR99 | 8541.29.0095 | 100 | ||||||||||||||||||||||||||||||||||||||||||||
 |
TK1K0A60F,S4X | 1.1100 | |
68 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK1K0A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 7.5A (Ta) | 10V | 1Ohm @ 3.8A, 10V | 4V @ 770µA | 24 nC @ 10 V | ±30V | 890 pF @ 300 V | - | 40W (Tc) | |||||||||||||||||||||||||||
 |
SSM3J14TTE85LF | - | |
8348 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSII | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3J14 | MOSFET (Metal Oxide) | TSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 2.7A (Ta) | 4V, 10V | 85mOhm @ 1.35A, 10V | - | ±20V | 413 pF @ 15 V | - | 700mW (Ta) | |||||||||||||||||||||||||||||
 |
SSM3K72CFS,LF | 0.2000 | |
133 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM3K72 | MOSFET (Metal Oxide) | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 170mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35 nC @ 4.5 V | ±20V | 17 pF @ 10 V | - | 150mW (Ta) | |||||||||||||||||||||||||||
|
SSM6J50TU,LF | 0.3900 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J50 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 2.5A (Ta) | 2V, 4.5V | 64mOhm @ 1.5A, 4.5V | 1.2V @ 200µA | ±10V | 800 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||||||||||||||
 |
TK55S10N1,LXHQ | 1.6800 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK55S10 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 55A (Ta) | 10V | 6.5mOhm @ 27.5A, 10V | 4V @ 500µA | 49 nC @ 10 V | ±20V | 3280 pF @ 10 V | - | 157W (Tc) | ||||||||||||||||||||||||||||
 |
SSM3K116TU,LF | 0.5400 | |
41 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | SSM3K116 | MOSFET (Metal Oxide) | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 2.2A (Ta) | 2.5V, 4.5V | 100mOhm @ 500mA, 4.5V | 1.1V @ 100µA | ±12V | 245 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||||||||||||||
|
TJ50S06M3L,LXHQ | 1.4600 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ50S06 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 50A (Ta) | 6V, 10V | 13.8mOhm @ 25A, 10V | 3V @ 1mA | 124 nC @ 10 V | +10V, -20V | 6290 pF @ 10 V | - | 90W (Tc) | ||||||||||||||||||||||||||||
 |
TPH9R506PL,LQ | 0.8300 | |
112 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH9R506 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 34A (Tc) | 4.5V, 10V | 9.5mOhm @ 17A, 10V | 2.5V @ 200µA | 21 nC @ 10 V | ±20V | 1910 pF @ 30 V | - | 830mW (Ta), 81W (Tc) | ||||||||||||||||||||||||||||
|
TTC015B,Q | 0.6600 | |
5712 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | 150°C (TJ) | Through Hole | TO-225AA, TO-126-3 | 1.5 W | TO-126N | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 250 | 80 V | 2 A | 100nA (ICBO) | NPN | 500mV @ 100mA, 1A | 100 @ 500mA, 2V | 150MHz | |||||||||||||||||||||||||||||||||
 |
TK7A65D(STA4,Q,M) | 2.2100 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK7A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 7A (Ta) | 10V | 980mOhm @ 3.5A, 10V | 4V @ 1mA | 24 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 45W (Tc) | |||||||||||||||||||||||||||
|
SSM6J424TU,LF | 0.4700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J424 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 22.5mOhm @ 6A, 4.5V | 1V @ 1mA | 23.1 nC @ 4.5 V | +6V, -8V | 1650 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||||||
|
RN2115,LF(CT | 0.2000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2115 | 100 mW | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 2.2 kOhms | 10 kOhms | ||||||||||||||||||||||||||||||
 |
RN4909,LF(CT | 0.2800 | |
3137 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4909 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz, 250MHz | 47kOhms | 22kOhms | ||||||||||||||||||||||||||||||
 |
SSM3K361R,LF | 0.5100 | |
128 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | SOT-23-3 Flat Leads | SSM3K361 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 100 V | 3.5A (Ta) | 4.5V, 10V | 69mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | ±20V | 430 pF @ 15 V | - | 1.2W (Ta) | |||||||||||||||||||||||||||
 |
TK650A60F,S4X | 1.3400 | |
48 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK650A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 11A (Ta) | 10V | 650mOhm @ 5.5A, 10V | 4V @ 1.16mA | 34 nC @ 10 V | ±30V | 1320 pF @ 300 V | - | 45W (Tc) | |||||||||||||||||||||||||||
 |
RN1909FE,LXHF(CT | 0.3800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN1909 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz | 47kOhms | 22kOhms | |||||||||||||||||||||||||||||||
 |
SSM3J66MFV,L3F | 0.3800 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-723 | SSM3J66 | MOSFET (Metal Oxide) | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | P-Channel | 20 V | 800mA (Ta) | 1.2V, 4.5V | 390mOhm @ 800mA, 4.5V | 1V @ 1mA | 1.6 nC @ 4.5 V | +6V, -8V | 100 pF @ 10 V | - | 150mW (Ta) | |||||||||||||||||||||||||||
 |
TK10Q60W,S1VQ | 3.0600 | |
75 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TK10Q60 | MOSFET (Metal Oxide) | I-Pak | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 75 | N-Channel | 600 V | 9.7A (Ta) | 10V | 430mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 80W (Tc) | |||||||||||||||||||||||||||
 |
SSM3K310T(TE85L,F) | - | |
6188 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3K310 | MOSFET (Metal Oxide) | TSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 5A (Ta) | 1.5V, 4V | 28mOhm @ 4A, 4V | - | 14.8 nC @ 4 V | ±10V | 1120 pF @ 10 V | - | 700mW (Ta) | ||||||||||||||||||||||||||||
|
TK42E12N1,S1X | 1.3700 | |
5104 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK42E12 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | TK42E12N1S1X | EAR99 | 8541.29.0095 | 50 | N-Channel | 120 V | 88A (Tc) | 10V | 9.4mOhm @ 21A, 10V | 4V @ 1mA | 52 nC @ 10 V | ±20V | 3100 pF @ 60 V | - | 140W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
Wishlist (0 Items)