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Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Diode Type | Voltage - Peak Reverse (Max) | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Current Drain (Id) - Max | Capacitance Ratio | Capacitance Ratio Condition | Q @ Vr, F |
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SSM3K15CT,L3F | - | ![]() |
3038 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-101, SOT-883 | SSM3K15 | MOSFET (Metal Oxide) | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | ±20V | 7.8 pF @ 3 V | - | 100mW (Ta) | |||||||||||||||||||||||||||||||||||||||
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TK5R1P08QM,RQ | 1.4600 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 80 V | 84A (Tc) | 6V, 10V | 5.1mOhm @ 42A, 10V | 3.5V @ 700µA | 56 nC @ 10 V | ±20V | 3980 pF @ 40 V | - | 104W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TK370A60F,S4X(S | - | ![]() |
9742 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX | Bulk | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | EAR99 | 8541.29.0095 | 1 | N-Channel | 600 V | 15A (Ta) | 10V | 370mOhm @ 7.5A, 10V | 4V @ 2.04mA | 55 nC @ 10 V | ±30V | 2200 pF @ 300 V | - | 45W (Tc) | ||||||||||||||||||||||||||||||||||||||||
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GT20N135SRA,S1E | 3.2800 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-247-3 | Standard | 312 W | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | 300V, 40A, 39Ohm, 15V | - | 1350 V | 40 A | 80 A | 2.4V @ 15V, 40A | -, 700µJ (off) | 185 nC | - | |||||||||||||||||||||||||||||||||||||||
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TPCP8011,LF | 1.0900 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SMD, Flat Lead | MOSFET (Metal Oxide) | PS-8 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 40 V | 5A (Ta) | 6V, 10V | 51.2mOhm @ 2.5A, 10V | 3V @ 1mA | 11.8 nC @ 10 V | ±20V | 505 pF @ 10 V | - | 940mW (Ta) | |||||||||||||||||||||||||||||||||||||||
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2SA1244-Y(T6L1,NQ) | 0.9600 | ![]() |
8236 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1 W | PW-MOLD | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | 50 V | 5 A | 1µA (ICBO) | PNP | 400mV @ 150mA, 3A | 70 @ 1A, 1V | 60MHz | ||||||||||||||||||||||||||||||||||||||||||
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TK4P60D,RQ | 0.9200 | ![]() |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 4A (Ta) | 10V | 1.7Ohm @ 2A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 100W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TK28E65W,S1X | 5.8100 | ![]() |
6456 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 27.6A (Ta) | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | ||||||||||||||||||||||||||||||||||||||
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GT50JR22(STA1,E,S) | 4.7900 | ![]() |
2570 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 230 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT50JR22(STA1ES) | EAR99 | 8541.29.0095 | 25 | - | - | 600 V | 50 A | 100 A | 2.2V @ 15V, 50A | - | - | |||||||||||||||||||||||||||||||||||||||
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TK7A80W,S4X | 2.8900 | ![]() |
50 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 6.5A (Ta) | 10V | 950mOhm @ 3.3A, 10V | 4V @ 280µA | 13 nC @ 10 V | ±20V | 700 pF @ 300 V | - | 35W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TK8P65W,RQ | 1.9100 | ![]() |
8048 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 7.8A (Ta) | 10V | 670mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16 nC @ 10 V | ±30V | 570 pF @ 300 V | - | 80W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TK090E65Z,S1X | 5.1200 | ![]() |
75 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 30A (Ta) | 10V | 90mOhm @ 15A, 10V | 4V @ 1.27mA | 47 nC @ 10 V | ±30V | 2780 pF @ 300 V | - | 230W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TK110Z65Z,S1F | 6.4000 | ![]() |
25 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-247-4 | MOSFET (Metal Oxide) | TO-247-4L(T) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TDTC123J,LM | 0.1800 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TDTC123 | 320 mW | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 10mA | 80 @ 10mA, 5V | 250 MHz | 2.2 kOhms | |||||||||||||||||||||||||||||||||||||||||
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TPH4R008QM,LQ | 1.5600 | ![]() |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 80 V | 86A (Tc) | 6V, 10V | 4mOhm @ 43A, 10V | 3.5V @ 600µA | 57 nC @ 10 V | ±20V | 5300 pF @ 40 V | - | 960mW (Ta), 170W (Tc) | |||||||||||||||||||||||||||||||||||||||
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TK5A60W5,S5VX | 1.5900 | ![]() |
7625 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 4.5A (Ta) | 10V | 950mOhm @ 2.3A, 10V | 4.5V @ 230µA | 11.5 nC @ 10 V | ±30V | 370 pF @ 300 V | - | 30W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TW030N120C,S1F | 34.4500 | ![]() |
119 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 60A (Tc) | 18V | 40mOhm @ 30A, 18V | 5V @ 13mA | 82 nC @ 18 V | +25V, -10V | 2925 pF @ 800 V | - | 249W (Tc) | ||||||||||||||||||||||||||||||||||||||
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SSM6J825R,LF | 0.4400 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J825 | MOSFET (Metal Oxide) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 4A (Ta) | 4V, 10V | 45mOhm @ 4A, 10V | 2V @ 250µA | 6.2 nC @ 4.5 V | +10V, -20V | 492 pF @ 10 V | - | 1.5W (Ta) | |||||||||||||||||||||||||||||||||||||
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CUS01(TE85L,Q,M) | - | ![]() |
8070 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-76, SOD-323 | CUS01 | Schottky | US-FLAT (1.25x2.5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 4,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 390 mV @ 1 A | 1.5 mA @ 30 V | -40°C ~ 125°C | 1A | - | ||||||||||||||||||||||||||||||||||||||||||
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1SV270TPH3F | 0.4200 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-76, SOD-323 | 1SV270 | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | 8.7pF @ 4V, 1MHz | Single | 10 V | 2 | C1/C4 | - | |||||||||||||||||||||||||||||||||||||||||||
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XPN9R614MC,L1XHQ | 1.4000 | ![]() |
13 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | XPN9R614 | MOSFET (Metal Oxide) | 8-TSON Advance-WF (3.1x3.1) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 40 V | 40A (Ta) | 4.5V, 10V | 9.6mOhm @ 20A, 10V | 2.1V @ 500µA | 64 nC @ 10 V | +10V, -20V | 3000 pF @ 10 V | - | 840mW (Ta), 100W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TJ10S04M3L,LXHQ | 0.9500 | ![]() |
4099 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ10S04 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 10A (Ta) | 6V, 10V | 44mOhm @ 5A, 10V | 3V @ 1mA | 19 nC @ 10 V | +10V, -20V | 930 pF @ 10 V | - | 27W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TK15S04N1L,LXHQ | 0.9600 | ![]() |
3131 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK15S04 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 15A (Ta) | 4.5V, 10V | 17.8mOhm @ 7.5A, 10V | 2.5V @ 100µA | 10 nC @ 10 V | ±20V | 610 pF @ 10 V | - | 46W (Tc) | ||||||||||||||||||||||||||||||||||||||
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XPH4R10ANB,L1XHQ | 2.2600 | ![]() |
34 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SOIC (0.197", 5.00mm Width) | XPH4R10 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 70A (Ta) | 6V, 10V | 4.1mOhm @ 35A, 10V | 3.5V @ 1mA | 75 nC @ 10 V | ±20V | 4970 pF @ 10 V | - | 960mW (Ta), 170W (Tc) | ||||||||||||||||||||||||||||||||||||||
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TK090A65Z,S4X | 4.7900 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK090A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 30A (Ta) | 10V | 90mOhm @ 15A, 10V | 4V @ 1.27mA | 47 nC @ 10 V | ±30V | 2780 pF @ 300 V | - | 45W (Tc) | |||||||||||||||||||||||||||||||||||||
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TK155U65Z,RQ | 3.4000 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerSFN | MOSFET (Metal Oxide) | TOLL | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 18A (Ta) | 10V | 155mOhm @ 9A, 10V | 4V @ 730µA | 29 nC @ 10 V | ±30V | 1635 pF @ 300 V | - | 150W (Tc) | ||||||||||||||||||||||||||||||||||||||
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SSM6N35AFE,LF | 0.4000 | ![]() |
43 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-563, SOT-666 | SSM6N35 | MOSFET (Metal Oxide) | 250mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 N-Channel (Dual) | 20V | 250mA (Ta) | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | Logic Level Gate, 1.2V Drive | |||||||||||||||||||||||||||||||||||||||
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RN1114MFV,L3F | 0.2000 | ![]() |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1114 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 1 kOhms | 10 kOhms | ||||||||||||||||||||||||||||||||||||||||
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TK6Q60W,S1VQ | 1.9900 | ![]() |
8673 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TK6Q60 | MOSFET (Metal Oxide) | I-Pak | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 75 | N-Channel | 600 V | 6.2A (Ta) | 10V | 820mOhm @ 3.1A, 10V | 3.7V @ 310µA | 12 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 60W (Tc) | |||||||||||||||||||||||||||||||||||||
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2SK209-GR(TE85L,F) | 0.4700 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SK209 | 150 mW | SC-59 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 13pF @ 10V | 50 V | 14 mA @ 10 V | 1.5 V @ 100 nA | 14 mA |
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