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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | ECCN | HTSUS | Standard Package | Speed | FET Type | Test Condition | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RN1907,LF(CT | 0.2800 |  |
9444 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1907 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 10kOhms | 47kOhms | |||||||||||||||||||||||||||||||||
 |
MT3S111TU,LF | 0.5800 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 3-SMD, Flat Lead | MT3S111 | 800mW | UFM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 12.5dB | 6V | 100mA | NPN | 200 @ 30mA, 5V | 10GHz | 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz | ||||||||||||||||||||||||||||||||||
 |
2SK3313(Q) | - | |
1994 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SK3313 | MOSFET (Metal Oxide) | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 12A (Ta) | 10V | 620mOhm @ 6A, 10V | 4V @ 1mA | 45 nC @ 10 V | ±30V | 2040 pF @ 10 V | - | 40W (Tc) | |||||||||||||||||||||||||||||||
 |
RN2701JE(TE85L,F) | 0.4800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN2701 | 100mW | ESV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 200MHz | 4.7kOhms | 4.7kOhms | |||||||||||||||||||||||||||||||||
 |
RN2608(TE85L,F) | 0.4700 | |
8298 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN2608 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 22kOhms | 47kOhms | |||||||||||||||||||||||||||||||||
 |
TPH1R005PL,L1Q | 2.0000 | |
6103 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | 8-PowerVDFN | TPH1R005 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 45 V | 150A (Tc) | 4.5V, 10V | 1.04mOhm @ 50A, 10V | 2.4V @ 1mA | 99 nC @ 10 V | ±20V | 9600 pF @ 22.5 V | - | 960mW (Ta), 170W (Tc) | ||||||||||||||||||||||||||||||
|
TPH2R608NH,L1Q | 1.5400 | |
14 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH2R608 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 75 V | 150A (Tc) | 10V | 2.6mOhm @ 50A, 10V | 4V @ 1mA | 72 nC @ 10 V | ±20V | 6000 pF @ 37.5 V | - | 142W (Tc) | ||||||||||||||||||||||||||||||
|
TPH5200FNH,L1Q | 2.9500 | |
11 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH5200 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 250 V | 26A (Tc) | 10V | 52mOhm @ 13A, 10V | 4V @ 1mA | 22 nC @ 10 V | ±20V | 2200 pF @ 100 V | - | 78W (Tc) | ||||||||||||||||||||||||||||||
 |
TK6P65W,RQ | 1.4000 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK6P65 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 650 V | 5.8A (Ta) | 10V | 1.05Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 60W (Tc) | ||||||||||||||||||||||||||||||
 |
TK10A60W5,S5VX | 2.0400 | |
32 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK10A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 9.7A (Ta) | 10V | 450mOhm @ 4.9A, 10V | 4.5V @ 500µA | 25 nC @ 10 V | ±30V | 720 pF @ 300 V | - | 30W (Tc) | ||||||||||||||||||||||||||||||
 |
TK20N60W5,S1VF | 3.9200 | |
4257 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK20N60 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 20A (Ta) | 10V | 175mOhm @ 10A, 10V | 4.5V @ 1mA | 55 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 165W (Tc) | ||||||||||||||||||||||||||||||
 |
SSM3K17FU,LF | 0.3300 | |
62 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SSM3K17 | MOSFET (Metal Oxide) | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 50 V | 100mA (Ta) | 2.5V, 4V | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | ±7V | 7 pF @ 3 V | - | 150mW (Ta) | |||||||||||||||||||||||||||||||
 |
1SS307E,L3F | 0.1900 | |
98 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-79, SOD-523 | 1SS307 | Standard | SC-79 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 8,000 | Small Signal =< 200mA (Io), Any Speed | 80 V | 1.3 V @ 100 mA | 10 nA @ 80 V | 150°C (Max) | 100mA | 6pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||||
 |
1SS413CT,L3F | 0.3000 | |
32 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-882 | 1SS413 | Schottky | SOD-882 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Small Signal =< 200mA (Io), Any Speed | 20 V | 550 mV @ 50 mA | 500 nA @ 20 V | -55°C ~ 125°C | 50mA | 3.9pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||||
 |
SSM3J356R,LF | 0.4100 | |
318 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3J356 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 60 V | 2A (Ta) | 4V, 10V | 300mOhm @ 1A, 10V | 2V @ 1mA | 8.3 nC @ 10 V | +10V, -20V | 330 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||||||||||
 |
SSM6J512NU,LF | 0.4800 | |
31 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6J512 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 12 V | 10A (Ta) | 1.8V, 8V | 16.2mOhm @ 4A, 8V | 1V @ 1mA | 19.5 nC @ 4.5 V | ±10V | 1400 pF @ 6 V | - | 1.25W (Ta) | ||||||||||||||||||||||||||||||
 |
TBAT54A,LM | 0.2100 | |
5743 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TBAT54 | Schottky | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Common Anode | 30 V | 100mA | 580 mV @ 100 mA | 1.5 ns | 2 µA @ 25 V | 150°C (Max) | ||||||||||||||||||||||||||||||||||
|
TBAW56,LM | 0.2100 | |
20 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-23-3 Flat Leads | TBAW56 | Standard | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Standard Recovery >500ns, > 200mA (Io) | 1 Pair Common Anode | 80 V | 215mA | - | |||||||||||||||||||||||||||||||||||||
|
SSM3K361R,LF | 0.5100 | |
128 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | SOT-23-3 Flat Leads | SSM3K361 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 100 V | 3.5A (Ta) | 4.5V, 10V | 69mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | ±20V | 430 pF @ 15 V | - | 1.2W (Ta) | ||||||||||||||||||||||||||||||
 |
2SK3128(Q) | - | |
4970 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SK3128 | MOSFET (Metal Oxide) | TO-3P(N) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 30 V | 60A (Ta) | 10V | 12mOhm @ 30A, 10V | 3V @ 1mA | 66 nC @ 10 V | ±20V | 2300 pF @ 10 V | - | 150W (Tc) | |||||||||||||||||||||||||||||||
 |
2SK3462(TE16L1,NQ) | - | |
7650 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SK3462 | MOSFET (Metal Oxide) | PW-MOLD | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 250 V | 3A (Ta) | 10V | 1.7Ohm @ 1.5A, 10V | 3.5V @ 1mA | 12 nC @ 10 V | ±20V | 267 pF @ 10 V | - | 20W (Tc) | |||||||||||||||||||||||||||||||
 |
GT10G131(TE12L,Q) | - | |
4336 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | GT10G131 | Standard | 1 W | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | - | - | 400 V | 200 A | 2.3V @ 4V, 200A | - | 3.1µs/2µs | ||||||||||||||||||||||||||||||||||
 |
GT60N321(Q) | - | |
5273 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-3PL | GT60N321 | Standard | 170 W | TO-3P(LH) | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 100 | - | 2.5 µs | - | 1000 V | 60 A | 120 A | 2.8V @ 15V, 60A | - | 330ns/700ns | ||||||||||||||||||||||||||||||||
 |
GT8G133(TE12L,Q) | - | |
4443 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | GT8G133 | Standard | 600 mW | 8-TSSOP | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | - | - | 400 V | 150 A | 2.9V @ 4V, 150A | - | 1.7µs/2µs | ||||||||||||||||||||||||||||||||||
|
TPC8036-H(TE12L,QM | - | |
8992 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8036 | MOSFET (Metal Oxide) | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 18A (Ta) | 4.5V, 10V | 4.5mOhm @ 9A, 10V | 2.3V @ 1mA | 49 nC @ 10 V | ±20V | 4600 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||||||||||
|
2SA2097(TE16L1,NQ) | 0.8000 | |
8947 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SA2097 | 1 W | PW-MOLD | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | 50 V | 5 A | 100nA (ICBO) | PNP | 270mV @ 53mA, 1.6A | 200 @ 500mA, 2V | - | ||||||||||||||||||||||||||||||||||
 |
TK13A60D(STA4,Q,M) | - | |
6841 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK13A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 13A (Ta) | 10V | 430mOhm @ 6.5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 50W (Tc) | ||||||||||||||||||||||||||||||
 |
TPCA8026(TE12L,Q,M | 1.8800 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8026 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 45A (Ta) | 4.5V, 10V | 2.2mOhm @ 23A, 10V | 2.5V @ 1mA | 113 nC @ 10 V | ±20V | 4200 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | ||||||||||||||||||||||||||||||
|
TPCA8051-H(T2L1,VM | - | |
9874 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8051 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 80 V | 28A (Ta) | 4.5V, 10V | 9.4mOhm @ 14A, 10V | 2.3V @ 1mA | 91 nC @ 10 V | ±20V | 7540 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | ||||||||||||||||||||||||||||||
 |
1SS309(TE85L,F) | 0.4100 | |
385 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74A, SOT-753 | 1SS309 | Standard | SMV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 4 Common Cathode | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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