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Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) | Capacitance Ratio | Capacitance Ratio Condition | Q @ Vr, F |
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TK25A60X,S5X | 4.0100 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK25A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 25A (Ta) | 10V | 125mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40 nC @ 10 V | ±30V | 2400 pF @ 300 V | - | 45W (Tc) | ||||||||||||||||||||||||||||||
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TK16V60W,LVQ | 1.5822 | ![]() |
7838 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 4-VSFN Exposed Pad | TK16V60 | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 139W (Tc) | ||||||||||||||||||||||||||||||
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SSM3J129TU(TE85L) | - | ![]() |
8685 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | SSM3J129 | MOSFET (Metal Oxide) | UFM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 4.6A (Ta) | 1.5V, 4.5V | 46mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1 nC @ 4.5 V | ±8V | 640 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||||||||||||
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TK60E08K3,S1X(S | - | ![]() |
6639 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | - | Through Hole | TO-220-3 | TK60E08 | MOSFET (Metal Oxide) | TO-220-3 | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 75 V | 60A | 9mOhm @ 30A, 10V | - | 75 nC @ 10 V | - | 128W | |||||||||||||||||||||||||||||||||
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TTC009,F(J | - | ![]() |
3543 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TTC009 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 80 V | 3 A | 100nA (ICBO) | NPN | 500mV @ 100mA, 1A | 100 @ 500mA, 5V | 150MHz | |||||||||||||||||||||||||||||||||||
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SSM6L35FE,LM | 0.4100 | ![]() |
31 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6L35 | MOSFET (Metal Oxide) | 150mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | N and P-Channel | 20V | 180mA, 100mA | 3Ohm @ 50mA, 4V | 1V @ 1mA | - | 9.5pF @ 3V | Logic Level Gate | ||||||||||||||||||||||||||||||||
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2SK2989(TPE6,F,M) | - | ![]() |
8590 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK2989 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 5A (Tj) | |||||||||||||||||||||||||||||||||||||||||||
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SSM6L36FE,LM | 0.4500 | ![]() |
108 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6L36 | MOSFET (Metal Oxide) | 150mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | N and P-Channel | 20V | 500mA, 330mA | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||
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2SJ438,MDKQ(J | - | ![]() |
1464 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-220-3 Full Pack | 2SJ438 | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 5A (Tj) | |||||||||||||||||||||||||||||||||||||||||||
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TK5A65DA(STA4,Q,M) | 1.5900 | ![]() |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK5A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 4.5A (Ta) | 10V | 1.67Ohm @ 2.3A, 10V | 4.4V @ 1mA | 16 nC @ 10 V | ±30V | 700 pF @ 25 V | - | 35W (Tc) | ||||||||||||||||||||||||||||||
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TK5A45DA(STA4,Q,M) | 1.0600 | ![]() |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK5A45 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 450 V | 4.5A (Ta) | 10V | 1.75Ohm @ 2.3A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | ||||||||||||||||||||||||||||||
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TK7J90E,S1E | 2.7000 | ![]() |
25 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVIII | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TK7J90 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 900 V | 7A (Ta) | 10V | 2Ohm @ 3.5A, 10V | 4V @ 700µA | 32 nC @ 10 V | ±30V | 1350 pF @ 25 V | - | 200W (Tc) | ||||||||||||||||||||||||||||||
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RN1113(T5L,F,T) | 0.0305 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1113 | 100 mW | SSM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 47 kOhms | ||||||||||||||||||||||||||||||||||
CMS03(TE12L) | - | ![]() |
2598 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Obsolete | Surface Mount | SOD-128 | CMS03 | Schottky | M-FLAT (2.4x3.8) | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 450 mV @ 3 A | 500 µA @ 30 V | -40°C ~ 150°C | 3A | - | ||||||||||||||||||||||||||||||||||||
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RN1111CT(TPL3) | - | ![]() |
5359 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN1111 | 50 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 20 V | 50 mA | 100nA (ICBO) | NPN - Pre-Biased | 150mV @ 250µA, 5mA | 300 @ 1mA, 5V | 10 kOhms | ||||||||||||||||||||||||||||||||||||
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2SC2655-O(TE6,F,M) | - | ![]() |
8083 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2655 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||||||||||
CRS08(TE85L,Q,M) | 0.5200 | ![]() |
29 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRS08 | Schottky | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 360 mV @ 1.5 A | 1 mA @ 30 V | -40°C ~ 125°C | 1.5A | 90pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||||
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2SA1837,HFEMBJF(J | - | ![]() |
3388 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1837 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | PNP | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 70MHz | |||||||||||||||||||||||||||||||||||
CMS20I30A(TE12L,QM | 0.5800 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-128 | CMS20 | Schottky | M-FLAT (2.4x3.8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 450 mV @ 2 A | 100 µA @ 30 V | 150°C (Max) | 2A | 82pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||||
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2SC5086-Y,LF | - | ![]() |
9674 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | SC-75, SOT-416 | 2SC5086 | 100mW | SSM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | - | 12V | 80mA | NPN | 120 @ 20mA, 10V | 7GHz | 1dB @ 500MHz | ||||||||||||||||||||||||||||||||||
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RN2102,LF(CT | 0.2000 | ![]() |
8558 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2102 | 100 mW | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 10 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||||
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TK2Q60D(Q) | 0.9400 | ![]() |
6036 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Bulk | Active | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TK2Q60 | MOSFET (Metal Oxide) | PW-MOLD2 | download | ROHS3 Compliant | 1 (Unlimited) | TK2Q60DQ | EAR99 | 8541.29.0095 | 200 | N-Channel | 600 V | 2A (Ta) | 10V | 4.3Ohm @ 1A, 10V | 4.4V @ 1mA | 7 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 60W (Tc) | |||||||||||||||||||||||||||||
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1SS392,LF | 0.3600 | ![]() |
13 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 1SS392 | Schottky | SC-59 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Common Cathode | 40 V | 100mA | 600 mV @ 100 mA | 5 µA @ 40 V | 125°C (Max) | |||||||||||||||||||||||||||||||||||
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CLS03(TE16L,PSD,Q) | - | ![]() |
6614 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS03 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 580 mV @ 10 A | 1 mA @ 60 V | -40°C ~ 125°C | 10A | 345pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||||
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CUS04(TE85L,Q,M) | - | ![]() |
2743 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-76, SOD-323 | CUS04 | Schottky | US-FLAT (1.25x2.5) | download | RoHS Compliant | CUS04(TE85LQM) | EAR99 | 8541.10.0080 | 4,000 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 580 mV @ 700 mA | 100 µA @ 60 V | -40°C ~ 150°C | 700mA | 38pF @ 10V, 1MHz | |||||||||||||||||||||||||||||||||||
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30JL2C41(F) | - | ![]() |
7236 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-3P-3, SC-65-3 | 30JL2C | Standard | TO-3P(N) | - | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Common Cathode | 600 V | 15A | 2 V @ 15 A | 50 ns | 50 µA @ 600 V | -40°C ~ 150°C | |||||||||||||||||||||||||||||||||||
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RN1426TE85LF | 0.4200 | ![]() |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1426 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 800 mA | 500nA | NPN - Pre-Biased | 250mV @ 1mA, 50mA | 90 @ 100mA, 1V | 300 MHz | 1 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||||
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1SV311(TPH3,F) | 0.0886 | ![]() |
4129 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-79, SOD-523 | 1SV311 | ESC | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 4,000 | 5.45pF @ 4V, 1MHz | Single | 10 V | 2.1 | C1/C4 | - | ||||||||||||||||||||||||||||||||||||
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SSM3K341R,LF | 0.4500 | ![]() |
112 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3K341 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 6A (Ta) | 4V, 10V | 36mOhm @ 5A, 10V | 2.5V @ 100µA | 9.3 nC @ 10 V | ±20V | 550 pF @ 10 V | - | 1.2W (Ta) | ||||||||||||||||||||||||||||||
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TPN2R304PL,L1Q | 0.9600 | ![]() |
27 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN2R304 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 80A (Tc) | 4.5V, 10V | 2.3mOhm @ 40A, 10V | 2.4V @ 300µA | 41 nC @ 10 V | ±20V | 3600 pF @ 20 V | - | 630mW (Ta), 104W (Tc) |
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