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Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Speed | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
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TDTA114E,LM | 0.1800 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TDTA114 | 320 mW | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 10mA | 30 @ 5mA, 5V | 250 MHz | 10 kOhms | ||||||||||||||||||||||||||||||||||
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RN2318(TE85L,F) | 0.2600 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2318 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 47 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||||
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TJ60S06M3L(T6L1,NQ | 2.2100 | ![]() |
3396 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ60S06 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 60A (Ta) | 6V, 10V | 11.2mOhm @ 30A, 10V | 3V @ 1mA | 156 nC @ 10 V | +10V, -20V | 7760 pF @ 10 V | - | 100W (Tc) | ||||||||||||||||||||||||||||||
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RN4911,LF(CT | 0.2800 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4911 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz, 250MHz | 10kOhms | - | |||||||||||||||||||||||||||||||||
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2SC2655-Y(T6TOJ,FM | - | ![]() |
5228 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2655 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||||||||||
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RN1406S,LF(D | - | ![]() |
5653 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1406 | 200 mW | S-Mini | download | 1 (Unlimited) | RN1406SLF(D | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 4.7 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||||
CRG03(TE85L,Q,M) | - | ![]() |
5772 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOD-123F | CRG03 | Standard | S-FLAT (1.6x3.5) | download | RoHS Compliant | 1 (Unlimited) | CRG03(TE85L,Q) | EAR99 | 8541.10.0080 | 3,000 | Standard Recovery >500ns, > 200mA (Io) | 400 V | 1 V @ 1 A | 10 µA @ 400 V | -40°C ~ 150°C | 1A | - | |||||||||||||||||||||||||||||||||||
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RN1426TE85LF | 0.4200 | ![]() |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1426 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 800 mA | 500nA | NPN - Pre-Biased | 250mV @ 1mA, 50mA | 90 @ 100mA, 1V | 300 MHz | 1 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||||
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TK11A50D(STA4,Q,M) | 2.1600 | ![]() |
3743 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK11A50 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 11A (Ta) | 10V | 600mOhm @ 5.5A, 10V | 4V @ 1mA | 24 nC @ 10 V | ±30V | 1200 pF @ 25 V | - | 45W (Tc) | ||||||||||||||||||||||||||||||
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HN1B04FU-GR,LF | 0.3300 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN1B04 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 150mA | 100nA (ICBO) | NPN, PNP | 250mV @ 10mA, 100mA | 200 @ 2mA, 6V | 150MHz | ||||||||||||||||||||||||||||||||||
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GT50N322A | 4.7800 | ![]() |
76 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 156 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT50N322A | EAR99 | 8541.29.0095 | 50 | - | 800 ns | - | 1000 V | 50 A | 120 A | 2.8V @ 15V, 60A | - | - | |||||||||||||||||||||||||||||||
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GT30J121(Q) | 3.3300 | ![]() |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-3P-3, SC-65-3 | GT30J121 | Standard | 170 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | 300V, 30A, 24Ohm, 15V | - | 600 V | 30 A | 60 A | 2.45V @ 15V, 30A | 1mJ (on), 800µJ (off) | 90ns/300ns | |||||||||||||||||||||||||||||||||
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2SC4116-BL,LF | 0.1800 | ![]() |
982 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SC4116 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 100mA | 350 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||||||||||||
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TPCC8104,L1Q | - | ![]() |
5190 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerVDFN | TPCC8104 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | - | 1 (Unlimited) | 264-TPCC8104L1QTR | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 30 V | 20A (Ta) | 4.5V, 10V | 8.8mOhm @ 10A, 10V | 2V @ 500µA | 58 nC @ 10 V | +20V, -25V | 2260 pF @ 10 V | - | 700mW (Ta), 27W (Tc) | ||||||||||||||||||||||||||||||
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TPC8133,LQ(S | 1.2800 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TPC8133 | MOSFET (Metal Oxide) | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 40 V | 9A (Ta) | 4.5V, 10V | 15mOhm @ 4.5A, 10V | 2V @ 500µA | 64 nC @ 10 V | +20V, -25V | 2900 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||||||||||
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TPH8R008NH,L1Q | 1.6400 | ![]() |
5756 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH8R008 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 80 V | 34A (Tc) | 10V | 8mOhm @ 17A, 10V | 4V @ 500µA | 35 nC @ 10 V | ±20V | 3000 pF @ 40 V | - | 1.6W (Ta), 61W (Tc) | |||||||||||||||||||||||||||||
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HN2A01FU-Y(TE85L,F | 0.4500 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Active | 125°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN2A01 | 200mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 150mA | 100nA (ICBO) | 2 PNP (Dual) | 300mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||||||||||||
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TK6R7A10PL,S4X | 1.5200 | ![]() |
2989 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-220-3 Full Pack | TK6R7A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 56A (Tc) | 4.5V, 10V | 6.7mOhm @ 28A, 10V | 2.5V @ 500µA | 58 nC @ 10 V | ±20V | 3455 pF @ 50 V | - | 42W (Tc) | ||||||||||||||||||||||||||||||
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SSM6J207FE,LF | 0.4200 | ![]() |
9048 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6J207 | MOSFET (Metal Oxide) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | P-Channel | 30 V | 1.4A (Ta) | 4V, 10V | 251mOhm @ 650mA, 10V | 2.6V @ 1mA | ±20V | 137 pF @ 15 V | - | 500mW (Ta) | |||||||||||||||||||||||||||||||
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TPW1R104PB,L1XHQ | 2.2600 | ![]() |
10 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPW1R104 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 120A (Ta) | 6V, 10V | 1.14mOhm @ 60A, 10V | 3V @ 500µA | 55 nC @ 10 V | ±20V | 4560 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | |||||||||||||||||||||||||||||||
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HN1D04FUTE85LF | - | ![]() |
7995 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN1D04 | Standard | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 2 Pair Series Connection | 80 V | 100mA | 1.2 V @ 100 mA | 1.6 ns | 500 nA @ 80 V | 150°C (Max) | ||||||||||||||||||||||||||||||||||
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TJ200F04M3L,LXHQ | 3.1700 | ![]() |
3367 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TJ200F04 | MOSFET (Metal Oxide) | TO-220SM(W) | download | 3 (168 Hours) | EAR99 | 8541.21.0095 | 1,000 | P-Channel | 40 V | 200A (Ta) | 6V, 10V | 1.8mOhm @ 100A, 10V | 3V @ 1mA | 460 nC @ 10 V | +10V, -20V | 1280 pF @ 10 V | - | 375W (Tc) | |||||||||||||||||||||||||||||||
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TPH3R506PL,LQ | 0.5263 | ![]() |
4366 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH3R506 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | - | 1 (Unlimited) | 264-TPH3R506PLLQTR | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 94A (Tc) | 4.5V, 10V | 3.5mOhm @ 47A, 10V | 2.5V @ 500µA | 55 nC @ 10 V | ±20V | 4420 pF @ 30 V | - | 830mW (Ta), 116W (Tc) | ||||||||||||||||||||||||||||||
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TK17E80W,S1X | 4.5900 | ![]() |
4719 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 | TK17E80 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 17A (Ta) | 10V | 290mOhm @ 8.5A, 10V | 4V @ 850µA | 32 nC @ 10 V | ±20V | 2050 pF @ 300 V | - | 180W (Tc) | ||||||||||||||||||||||||||||||
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2SA1013-O,T6MIBF(J | - | ![]() |
1634 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1013 | 900 mW | TO-92L | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 160 V | 1 A | 1µA (ICBO) | PNP | 1.5V @ 50mA, 500mA | 60 @ 200mA, 5V | 50MHz | |||||||||||||||||||||||||||||||||||
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2SK3670(T6CANO,F,M | - | ![]() |
3113 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK3670 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 670mA (Tj) | |||||||||||||||||||||||||||||||||||||||||||
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RN1104ACT(TPL3) | - | ![]() |
2761 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN1104 | 100 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 50 V | 80 mA | 500nA | NPN - Pre-Biased | 150mV @ 250µA, 5mA | 80 @ 10mA, 5V | 47 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||||||
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1SS416,L3M | 0.2700 | ![]() |
34 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-923 | 1SS416 | Schottky | SOD-923 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Small Signal =< 200mA (Io), Any Speed | 30 V | 500 mV @ 100 mA | 50 µA @ 30 V | 125°C (Max) | 100mA | 15pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||||
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RN1425TE85LF | 0.4200 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1425 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 800 mA | 500nA | NPN - Pre-Biased | 250mV @ 1mA, 50mA | 90 @ 100mA, 1V | 300 MHz | 470 Ohms | 10 kOhms | |||||||||||||||||||||||||||||||||
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DSR01S30SC,L3F | - | ![]() |
2781 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 0201 (0603 Metric) | DSR01S30 | Schottky | SC2 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Small Signal =< 200mA (Io), Any Speed | 30 V | 620 mV @ 100 mA | 700 µA @ 30 V | 125°C (Max) | 100mA | 8.2pF @ 0V, 1MHz |
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