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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Frequency | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Current Rating (Amps) | Test Condition | Current - Test | Power - Output | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Noise Figure | Reverse Recovery Time (trr) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Voltage - Test | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) | Capacitance Ratio | Capacitance Ratio Condition | Q @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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TPH1R104PB,L1XHQ | 2.0900 |  |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SOIC (0.197", 5.00mm Width) | TPH1R104 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 5,000 | N-Channel | 40 V | 120A (Ta) | 6V, 10V | 1.14mOhm @ 60A, 10V | 3V @ 500µA | 55 nC @ 10 V | ±20V | 4560 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | |||||||||||||||||||||||||||||||||||||
 |
TK25S06N1L,LXHQ | 0.9300 | |
3804 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK25S06 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 25A (Ta) | 4.5V, 10V | 36.8mOhm @ 12.5A, 4.5V | 2.5V @ 100µA | 15 nC @ 10 V | ±20V | 855 pF @ 10 V | - | 57W (Tc) | |||||||||||||||||||||||||||||||||||||
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TK33S10N1Z,LXHQ | 1.4200 | |
8142 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK33S10 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 33A (Ta) | 10V | 9.7mOhm @ 16.5A, 10V | 4V @ 500µA | 28 nC @ 10 V | ±20V | 2050 pF @ 10 V | - | 125W (Tc) | |||||||||||||||||||||||||||||||||||||
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SSM10N961L,ELF | 0.8700 | |
9155 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 10-XFLGA, CSP | MOSFET (Metal Oxide) | 880mW (Ta) | TCSPAG-341501 | - | ROHS3 Compliant | 1 (Unlimited) | 10,000 | 2 N-Channel (Half Bridge) | 30V | 9A (Ta) | 2.3V @ 250µA | 17.3nC @ 10V | - | - | ||||||||||||||||||||||||||||||||||||||||||
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RN1112(TE85L,F) | 0.2200 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1112 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 22 kOhms | |||||||||||||||||||||||||||||||||||||||||
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RN2102MFV,L3F(CT | 0.1800 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2102 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 10 kOhms | 10 kOhms | ||||||||||||||||||||||||||||||||||||||||
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RN2414(TE85L,F) | 0.2800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2414 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 1 kOhms | 10 kOhms | ||||||||||||||||||||||||||||||||||||||||
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TW060Z120C,S1F | 17.8200 | |
7048 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4L(X) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 36A (Tc) | 18V | 82mOhm @ 18A, 18V | 5V @ 4.2mA | 46 nC @ 18 V | +25V, -10V | 1530 pF @ 800 V | - | 170W (Tc) | |||||||||||||||||||||||||||||||||||||
|
TJ20A10M3(STA4,Q | - | |
6373 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TJ20A10 | MOSFET (Metal Oxide) | TO-220SIS | - | 264-TJ20A10M3(STA4Q | EAR99 | 8541.29.0095 | 50 | P-Channel | 100 V | 20A (Ta) | 10V | 90mOhm @ 10A, 10V | 4V @ 1mA | 120 nC @ 10 V | ±20V | 5500 pF @ 10 V | - | 35W (Tc) | |||||||||||||||||||||||||||||||||||||
 |
SSM6K818R,LF | 0.7000 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6K818 | MOSFET (Metal Oxide) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 15A (Ta) | 4.5V, 10V | 12mOhm @ 4A, 4.5V | 2.1V @ 100µA | 7.5 nC @ 4.5 V | ±20V | 1130 pF @ 15 V | - | 1.5W (Ta) | ||||||||||||||||||||||||||||||||||||
 |
GT30J65MRB,S1E | 2.5800 | |
74 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | GT30J65 | Standard | 200 W | TO-3P(N) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | 400V, 15A, 56Ohm, 15V | 200 ns | - | 650 V | 60 A | 1.8V @ 15V, 30A | 1.4mJ (on), 220µJ (off) | 70 nC | 75ns/400ns | |||||||||||||||||||||||||||||||||||||
 |
SSM3K36TU,LF | 0.3600 | |
2021 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | SSM3K36 | MOSFET (Metal Oxide) | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 500mA (Ta) | 1.5V, 5V | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23 nC @ 4 V | ±10V | 46 pF @ 10 V | - | 800mW (Ta) | ||||||||||||||||||||||||||||||||||||
 |
SSM6N68NU,LF | 0.4600 | |
15 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-WDFN Exposed Pad | SSM6N68 | MOSFET (Metal Oxide) | 2W (Ta) | 6-µDFN (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 4A (Ta) | 84mOhm @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | 129pF @ 15V | Logic Level Gate, 1.8V Drive | ||||||||||||||||||||||||||||||||||||||
 |
TK040Z65Z,S1F | 12.5400 | |
2107 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-247-4 | TK040Z65 | MOSFET (Metal Oxide) | TO-247-4L(T) | download | ROHS3 Compliant | 1 (Unlimited) | 264-TK040Z65ZS1F | EAR99 | 8541.29.0095 | 25 | N-Channel | 650 V | 57A (Ta) | 10V | 40mOhm @ 28.5A, 10V | 4V @ 2.85mA | 105 nC @ 10 V | ±30V | 6250 pF @ 300 V | - | 360W (Tc) | |||||||||||||||||||||||||||||||||||
 |
2SA1588-O,LF | 0.0478 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SA1588 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 30 V | 500 mA | 100nA (ICBO) | PNP | 250mV @ 10mA, 100mA | 70 @ 100mA, 1V | 200MHz | ||||||||||||||||||||||||||||||||||||||||
 |
TK20E60W5,S1VX | 3.5500 | |
6535 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 | TK20E60 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 20A (Ta) | 10V | 175mOhm @ 10A, 10V | 4.5V @ 1mA | 55 nC @ 10 V | ±30V | 1800 pF @ 300 V | - | 165W (Tc) | ||||||||||||||||||||||||||||||||||||
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RN1412,LF | 0.1900 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1412 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 22 kOhms | |||||||||||||||||||||||||||||||||||||||||
 |
1SV314(TPL3,F) | 0.3800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-79, SOD-523 | 1SV314 | ESC | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 8,000 | 3.4pF @ 2.5V, 1MHz | Single | 10 V | 2.5 | C0.5/C2.5 | - | ||||||||||||||||||||||||||||||||||||||||||
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SSM3K7002KFU,LF | 0.2000 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-70, SOT-323 | SSM3K7002 | MOSFET (Metal Oxide) | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 40 pF @ 10 V | - | 150mW (Ta) | ||||||||||||||||||||||||||||||||||||
|
RN2309,LXHF | 0.3900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2309 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200 MHz | 47 kOhms | 22 kOhms | ||||||||||||||||||||||||||||||||||||||||
|
2SC5085-O(TE85L,F) | - | |
7025 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SC5085 | 100mW | SC-70 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | - | 12V | 80mA | NPN | 80 @ 20mA, 10V | 7GHz | 1dB @ 500MHz | ||||||||||||||||||||||||||||||||||||||||
|
TPCA8A04-H(TE12L,Q | - | |
9760 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8A04 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 44A (Ta) | 4.5V, 10V | 3.2mOhm @ 22A, 10V | 2.3V @ 1mA | 59 nC @ 10 V | ±20V | 5700 pF @ 10 V | - | - | |||||||||||||||||||||||||||||||||||||
 |
3SK292(TE85R,F) | - | |
9325 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 12.5 V | Surface Mount | SC-61AA | 3SK292 | 500MHz | MOSFET | SMQ | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel Dual Gate | 30mA | 10 mA | - | 26dB | 1.4dB | 6 V | |||||||||||||||||||||||||||||||||||||||
 |
RN2906,LXHF(CT | 0.4400 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2906 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 4.7kOhms | 47kOhms | ||||||||||||||||||||||||||||||||||||||||
 |
TK9A90E,S4X | 2.2100 | |
40 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVIII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK9A90 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 9A (Ta) | 10V | 1.3Ohm @ 4.5A, 10V | 4V @ 900µA | 46 nC @ 10 V | ±30V | 2000 pF @ 25 V | - | 50W (Tc) | ||||||||||||||||||||||||||||||||||||
 |
2SC3669-Y(T2OMI,FM | - | |
8935 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SC3669 | 1 W | MSTM | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 80 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||||||||||||||||
|
RN1404,LF | 0.2200 | |
5315 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1404 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 47 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||||||||||
 |
RN4985FE,LF(CT | 0.2400 | |
259 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4985 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz, 200MHz | 2.2kOhms | 47kOhms | |||||||||||||||||||||||||||||||||||||||
 |
TK7R4A10PL,S4X | 1.4100 | |
1092 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-220-3 Full Pack | TK7R4A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 50A (Tc) | 4.5V, 10V | 7.4mOhm @ 25A, 10V | 2.5V @ 500µA | 44 nC @ 10 V | ±20V | 2800 pF @ 50 V | - | 42W (Tc) | ||||||||||||||||||||||||||||||||||||
 |
RN2709JE(TE85L,F) | 0.4700 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN2709 | 100mW | ESV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz | 47kOhms | 22kOhms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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