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Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) |
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SSM3J118TU,LF | 0.4800 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | MOSFET (Metal Oxide) | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 1.4A (Ta) | 4V, 10V | 240mOhm @ 650mA, 10V | 2.6V @ 1mA | ±20V | 137 pF @ 15 V | - | 500mW (Ta) | ||||||||||||||||||||||||||||||||
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TK16V60W5,LVQ | 3.4800 | ![]() |
3143 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 15.8A (Ta) | 10V | 245mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 139W (Tc) | |||||||||||||||||||||||||||||||
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GT15J341,S4X | 1.8100 | ![]() |
50 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | Standard | 30 W | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | 300V, 15A, 33Ohm, 15V | 80 ns | - | 600 V | 15 A | 60 A | 2V @ 15V, 15A | 300µJ (on), 300µJ (off) | 60ns/170ns | ||||||||||||||||||||||||||||||||
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2SA2061(TE85L,F) | 0.5000 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 625 mW | TSM | download | ROHS3 Compliant | 1 (Unlimited) | 264-2SA2061(TE85L,F)DKR | EAR99 | 8541.21.0095 | 3,000 | 20 V | 2.5 A | 100nA (ICBO) | PNP | 190mV @ 53mA, 1.6A | 200 @ 500mA, 2V | - | ||||||||||||||||||||||||||||||||||
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SSM6N813R,LF | 0.5500 | ![]() |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 175°C | Surface Mount | 6-SMD, Flat Leads | SSM6N813 | MOSFET (Metal Oxide) | 1.5W (Ta) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 100V | 3.5A (Ta) | 112mOhm @ 3.5A, 10V | 2.5V @ 100µA | 3.6nC @ 4.5V | 242pF @ 15V | - | ||||||||||||||||||||||||||||||||
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TK110E65Z,S1X | 4.3100 | ![]() |
129 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | |||||||||||||||||||||||||||||||
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TK13P25D,RQ | 0.9000 | ![]() |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 250 V | 13A (Ta) | 10V | 250mOhm @ 6.5A, 10V | 3.5V @ 1mA | 25 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 96W (Tc) | |||||||||||||||||||||||||||||||
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GT50N322A | 4.7800 | ![]() |
76 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 156 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT50N322A | EAR99 | 8541.29.0095 | 50 | - | 800 ns | - | 1000 V | 50 A | 120 A | 2.8V @ 15V, 60A | - | - | |||||||||||||||||||||||||||||||
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TPW5200FNH,L1Q | 3.0100 | ![]() |
4 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 250 V | 26A (Tc) | 10V | 52mOhm @ 13A, 10V | 4V @ 1mA | 22 nC @ 10 V | ±20V | 2200 pF @ 100 V | - | 800mW (Ta), 142W (Tc) | ||||||||||||||||||||||||||||||||
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TK10E80W,S1X | 3.6500 | ![]() |
50 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 9.5A (Ta) | 10V | 550mOhm @ 4.8A, 10V | 4V @ 450µA | 19 nC @ 10 V | ±20V | 1150 pF @ 300 V | - | 130W (Tc) | |||||||||||||||||||||||||||||||
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GT50J341,Q | 3.5900 | ![]() |
3865 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | Standard | 200 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | - | - | 600 V | 50 A | 100 A | 2.2V @ 15V, 50A | - | - | |||||||||||||||||||||||||||||||||
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CMZ36(TE12L,Q,M) | 0.5800 | ![]() |
2937 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | 2 W | M-FLAT (2.4x3.8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1.2 V @ 200 mA | 10 µA @ 28.8 V | 36 V | 30 Ohms | |||||||||||||||||||||||||||||||||||||
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TDTA123J,LM | 0.1800 | ![]() |
7429 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TDTA123 | 320 mW | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 10mA | 80 @ 10mA, 5V | 250 MHz | 2.2 kOhms | ||||||||||||||||||||||||||||||||||
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GT40QR21(STA1,E,D | 3.6200 | ![]() |
18 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | GT40QR21 | Standard | 230 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT40QR21(STA1ED | EAR99 | 8541.29.0095 | 25 | 280V, 40A, 10Ohm, 20V | 600 ns | - | 1200 V | 40 A | 80 A | 2.7V @ 15V, 40A | -, 290µJ (off) | - | ||||||||||||||||||||||||||||||
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TPW1500CNH,L1Q | 2.6600 | ![]() |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 150 V | 38A (Tc) | 10V | 15.4mOhm @ 19A, 10V | 4V @ 1mA | 22 nC @ 10 V | ±20V | 2200 pF @ 75 V | - | 800mW (Ta), 142W (Tc) | ||||||||||||||||||||||||||||||||
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SSM6L820R,LF | 0.5300 | ![]() |
2581 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6L820 | MOSFET (Metal Oxide) | 1.4W (Ta) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N and P-Channel | 30V, 20V | 4A (Ta) | 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V | 1V @ 1mA, 1.2V @ 1mA | 3.2nC @ 4.5V, 6.7nC @ 4.5V | 310pF @ 15V, 480pF @ 10V | - | ||||||||||||||||||||||||||||||||
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TK10P50W,RQ | 1.7600 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 500 V | 9.7A (Ta) | 10V | 430mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20 nC @ 10 V | ±30V | 700 pF @ 300 V | - | 80W (Tc) | |||||||||||||||||||||||||||||||
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CUHS15S60,H3F | 0.4900 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, Flat Lead | Schottky | US2H | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 670 mV @ 1.5 A | 450 µA @ 60 V | 150°C | 1.5A | 130pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||||
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SSM3K16FV,L3F | 0.2200 | ![]() |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-723 | MOSFET (Metal Oxide) | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | N-Channel | 20 V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | ±10V | 9.3 pF @ 3 V | - | 150mW (Ta) | ||||||||||||||||||||||||||||||||
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TDTA124E,LM | 0.1800 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TDTA124 | 320 mW | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 10mA | 56 @ 5mA, 5V | 250 MHz | 22 kOhms | ||||||||||||||||||||||||||||||||||
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TTC014,L1NV | 0.9900 | ![]() |
8196 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1 W | PW-MOLD | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | 800 V | 1 A | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 100 @ 100mA, 5V | - | ||||||||||||||||||||||||||||||||||||
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SSM5N16FU,LF | 0.4500 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | SSM5N16 | MOSFET (Metal Oxide) | 200mW (Ta) | USV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 100mA (Ta) | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | - | ||||||||||||||||||||||||||||||||
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TRS10E65H,S1Q | 2.8900 | ![]() |
340 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | ROHS3 Compliant | 1 (Unlimited) | 264-TRS10E65H,S1Q | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 10 A | 0 ns | 100 µA @ 650 V | 175°C | 10A | 649pF @ 1V, 1MHz | ||||||||||||||||||||||||||||||||||
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TRS12V65H,LQ | 3.2800 | ![]() |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | SiC (Silicon Carbide) Schottky | 4-DFN-EP (8x8) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 12 A | 0 ns | 120 µA @ 650 V | 175°C | 12A | 778pF @ 1V, 1MHz | |||||||||||||||||||||||||||||||||||
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TRS12E65H,S1Q | 3.2700 | ![]() |
400 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | ROHS3 Compliant | 1 (Unlimited) | 264-TRS12E65H,S1Q | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 12 A | 0 ns | 120 µA @ 650 V | 175°C | 12A | 778pF @ 1V, 1MHz | ||||||||||||||||||||||||||||||||||
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TRS6E65H,S1Q | 2.3200 | ![]() |
400 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | ROHS3 Compliant | 1 (Unlimited) | 264-TRS6E65H,S1Q | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 6 A | 0 ns | 70 µA @ 650 V | 175°C | 6A | 392pF @ 1V, 1MHz | ||||||||||||||||||||||||||||||||||
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TRS3E65H,S1Q | 1.6100 | ![]() |
400 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | ROHS3 Compliant | 1 (Unlimited) | 264-TRS3E65H,S1Q | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 3 A | 0 ns | 45 µA @ 650 V | 175°C | 3A | 199pF @ 1V, 1MHz | ||||||||||||||||||||||||||||||||||
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XPH3R206NC,L1XHQ | 1.7500 | ![]() |
19 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SOIC (0.197", 5.00mm Width) | XPH3R206 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 60 V | 70A (Ta) | 3.2mOhm @ 35A, 10V | 2.5V @ 500µA | 65 nC @ 10 V | ±20V | 4180 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | |||||||||||||||||||||||||||||||
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SSM3J377R,LXHF | 0.4700 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 3.9A (Ta) | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | +6V, -8V | 290 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||||||||||
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SSM3J378R,LXHF | 0.5000 | ![]() |
24 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 29.8mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | +6V, -8V | 840 pF @ 10 V | - | 1W (Ta) |
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