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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SC2235-Y,USNHF(M | - |  |
6441 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2235 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | |||||||||||||||||||||||||||||||||
 |
RN1113,LF(CT | 0.2000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1113 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 47 kOhms | |||||||||||||||||||||||||||||||||
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TK15S04N1L,LQ | 1.6400 | |
4104 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK15S04 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 15A (Ta) | 4.5V, 10V | 17.8mOhm @ 7.5A, 10V | 2.5V @ 100µA | 10 nC @ 10 V | ±20V | 610 pF @ 10 V | - | 46W (Tc) | ||||||||||||||||||||||||||||
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CUS05S30,H3F | 0.3100 | |
33 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-76, SOD-323 | CUS05S30 | Schottky | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 340 mV @ 100 mA | 150 µA @ 10 V | 125°C (Max) | 500mA | 55pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||
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TK1K9A60F,S4X | 0.9000 | |
4438 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK1K9A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 3.7A (Ta) | 10V | 1.9Ohm @ 1.9A, 10V | 4V @ 400µA | 14 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 30W (Tc) | ||||||||||||||||||||||||||||
 |
RN2901(T5L,F,T) | - | |
3843 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2901 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 200MHz | 4.7kOhms | 4.7kOhms | ||||||||||||||||||||||||||||||||
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CLS01(T6LSONY,Q) | - | |
6695 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS01 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 470 mV @ 10 A | 1 mA @ 30 V | -40°C ~ 125°C | 10A | 530pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||
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RN1503(TE85L,F) | 0.4500 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Active | Surface Mount | SC-74A, SOT-753 | RN1503 | 300mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz | 22kOhms | 22kOhms | |||||||||||||||||||||||||||||||
|
CLS03(TE16L,SQC,Q) | - | |
9458 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS03 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 580 mV @ 10 A | 1 mA @ 60 V | -40°C ~ 125°C | 10A | 345pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||
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RN2510(TE85L,F) | 0.4700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74A, SOT-753 | RN2510 | 300mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz | 4.7kOhms | - | |||||||||||||||||||||||||||||||
|
CRS15I30B(TE85L,QM | 0.1292 | |
7231 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRS15I30 | Schottky | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 400 mV @ 1.5 A | 100 µA @ 30 V | 150°C (Max) | 1.5A | 82pF @ 10V, 1MHz | |||||||||||||||||||||||||||||||||
|
CLS02(T6L,CANO-O,Q | - | |
4848 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS02 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 550 mV @ 10 A | 1 mA @ 40 V | -40°C ~ 125°C | 10A | 420pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||
|
RN4983,LF(CT | 0.3500 | |
7287 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4983 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz, 200MHz | 22kOhms | 22kOhms | |||||||||||||||||||||||||||||||
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TK39N60W5,S1VF | 8.1100 | |
874 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK39N60 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 38.8A (Ta) | 10V | 74mOhm @ 19.4A, 10V | 4.5V @ 1.9mA | 135 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 270W (Tc) | ||||||||||||||||||||||||||||
 |
CMS03(TE12L,Q,M) | 0.6600 | |
17 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-128 | CMS03 | Schottky | M-FLAT (2.4x3.8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 450 mV @ 3 A | 500 µA @ 30 V | -40°C ~ 150°C | 3A | - | |||||||||||||||||||||||||||||||||
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RN2911,LF | 0.2800 | |
9669 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2911 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz | 10kOhms | - | |||||||||||||||||||||||||||||||
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SSM4K27CTTPL3 | - | |
8402 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 4-SMD, No Lead | SSM4K27 | MOSFET (Metal Oxide) | CST4 (1.2x0.8) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 20 V | 500mA (Ta) | 1.8V, 4V | 205mOhm @ 250mA, 4V | 1.1V @ 1mA | ±12V | 174 pF @ 10 V | - | 400mW (Ta) | ||||||||||||||||||||||||||||||
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SSM6N37CTD(TPL3) | - | |
2918 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SSM6N37 | MOSFET (Metal Oxide) | 140mW | CST6D | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 2 N-Channel (Dual) | 20V | 250mA | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||
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RN2105MFV,L3F(CT | 0.1800 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2105 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 2.2 kOhms | 47 kOhms | ||||||||||||||||||||||||||||||||
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TW015N65C,S1F | 55.4500 | |
114 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 100A (Tc) | 18V | 21mOhm @ 50A, 18V | 5V @ 11.7mA | 128 nC @ 18 V | +25V, -10V | 4850 pF @ 400 V | - | 342W (Tc) | |||||||||||||||||||||||||||||
|
TK2R9E10PL,S1X | 2.9000 | |
9020 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tube | Active | 175°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 100A (Ta) | 4.5V, 10V | 2.9mOhm @ 50A, 10V | 2.5V @ 1mA | 161 nC @ 10 V | ±20V | 9500 pF @ 50 V | - | 306W (Tc) | |||||||||||||||||||||||||||||
|
TK5A90E,S4X | 1.4600 | |
9249 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 4.5A (Ta) | 10V | 3.1Ohm @ 2.3A, 10V | 4V @ 450µA | 20 nC @ 10 V | ±30V | 950 pF @ 25 V | - | 40W (Tc) | |||||||||||||||||||||||||||||
|
TPW3R70APL,L1Q | 2.9000 | |
5726 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 45A, 10V | 2.5V @ 1mA | 67 nC @ 10 V | ±20V | 6300 pF @ 50 V | - | 960mW (Ta), 170W (Tc) | ||||||||||||||||||||||||||||||
|
TPH5R60APL,L1Q | 1.3600 | |
3472 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 60A (Tc) | 4.5V, 10V | 5.6mOhm @ 30A, 10V | 2.5V @ 500µA | 52 nC @ 10 V | ±20V | 4300 pF @ 50 V | - | 960mW (Ta), 132W (Tc) | ||||||||||||||||||||||||||||||
 |
SSM3J118TU,LF | 0.4800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | MOSFET (Metal Oxide) | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 1.4A (Ta) | 4V, 10V | 240mOhm @ 650mA, 10V | 2.6V @ 1mA | ±20V | 137 pF @ 15 V | - | 500mW (Ta) | ||||||||||||||||||||||||||||||
 |
SSM6N813R,LF | 0.5500 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 175°C | Surface Mount | 6-SMD, Flat Leads | SSM6N813 | MOSFET (Metal Oxide) | 1.5W (Ta) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 100V | 3.5A (Ta) | 112mOhm @ 3.5A, 10V | 2.5V @ 100µA | 3.6nC @ 4.5V | 242pF @ 15V | - | ||||||||||||||||||||||||||||||
|
TK13P25D,RQ | 0.9000 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 250 V | 13A (Ta) | 10V | 250mOhm @ 6.5A, 10V | 3.5V @ 1mA | 25 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 96W (Tc) | |||||||||||||||||||||||||||||
|
TDTA123J,LM | 0.1800 | |
7429 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TDTA123 | 320 mW | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 10mA | 80 @ 10mA, 5V | 250 MHz | 2.2 kOhms | ||||||||||||||||||||||||||||||||
 |
GT40QR21(STA1,E,D | 3.6200 | |
18 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | GT40QR21 | Standard | 230 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT40QR21(STA1ED | EAR99 | 8541.29.0095 | 25 | 280V, 40A, 10Ohm, 20V | 600 ns | - | 1200 V | 40 A | 80 A | 2.7V @ 15V, 40A | -, 290µJ (off) | - | ||||||||||||||||||||||||||||
|
TPW1500CNH,L1Q | 2.6600 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 150 V | 38A (Tc) | 10V | 15.4mOhm @ 19A, 10V | 4V @ 1mA | 22 nC @ 10 V | ±20V | 2200 pF @ 75 V | - | 800mW (Ta), 142W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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