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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TPW1R104PB,L1XHQ | 2.2600 |  |
10 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPW1R104 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 120A (Ta) | 6V, 10V | 1.14mOhm @ 60A, 10V | 3V @ 500µA | 55 nC @ 10 V | ±20V | 4560 pF @ 10 V | - | 960mW (Ta), 132W (Tc) | ||||||||||||||||||||||||||||
 |
TK33S10N1Z,LXHQ | 1.4200 | |
8142 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK33S10 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 33A (Ta) | 10V | 9.7mOhm @ 16.5A, 10V | 4V @ 500µA | 28 nC @ 10 V | ±20V | 2050 pF @ 10 V | - | 125W (Tc) | ||||||||||||||||||||||||||||
 |
GT30J341,Q | 3.4000 | |
100 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | GT30J341 | Standard | 230 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT30J341Q | EAR99 | 8541.29.0095 | 100 | 300V, 30A, 24Ohm, 15V | 50 ns | 600 V | 59 A | 120 A | 2V @ 15V, 30A | 800µJ (on), 600µJ (off) | 80ns/280ns | ||||||||||||||||||||||||||||
 |
TPCC8104,L1Q(CM | - | |
2662 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerVDFN | TPCC8104 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | - | 1 (Unlimited) | 264-TPCC8104L1Q(CMTR | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 30 V | 20A (Ta) | 4.5V, 10V | 8.8mOhm @ 10A, 10V | 2V @ 500µA | 58 nC @ 10 V | +20V, -25V | 2260 pF @ 10 V | - | 700mW (Ta), 27W (Tc) | |||||||||||||||||||||||||||
 |
TK33S10N1L,LQ | 1.9000 | |
7785 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK33S10 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | 264-TK33S10N1LLQCT | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 33A (Ta) | 4.5V, 10V | 9.7mOhm @ 16.5A, 10V | 2.5V @ 500µA | 33 nC @ 10 V | ±20V | 2250 pF @ 10 V | - | 125W (Tc) | ||||||||||||||||||||||||||
 |
TPH3R506PL,LQ | 0.5263 | |
4366 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH3R506 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | - | 1 (Unlimited) | 264-TPH3R506PLLQTR | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 60 V | 94A (Tc) | 4.5V, 10V | 3.5mOhm @ 47A, 10V | 2.5V @ 500µA | 55 nC @ 10 V | ±20V | 4420 pF @ 30 V | - | 830mW (Ta), 116W (Tc) | |||||||||||||||||||||||||||
|
TK40J20D,S1F(O | - | |
6850 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVIII | Tray | Active | 150°C | Through Hole | TO-3P-3, SC-65-3 | TK40J20 | MOSFET (Metal Oxide) | TO-3P(N) | - | 1 (Unlimited) | 264-TK40J20DS1F(O | EAR99 | 8541.29.0095 | 100 | N-Channel | 200 V | 40A (Ta) | 10V | 44mOhm @ 20A, 10V | 3.5V @ 1mA | 100 nC @ 10 V | ±20V | 4300 pF @ 100 V | - | 260W (Tc) | |||||||||||||||||||||||||||
|
TPCC8104,L1Q | - | |
5190 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerVDFN | TPCC8104 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | - | 1 (Unlimited) | 264-TPCC8104L1QTR | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 30 V | 20A (Ta) | 4.5V, 10V | 8.8mOhm @ 10A, 10V | 2V @ 500µA | 58 nC @ 10 V | +20V, -25V | 2260 pF @ 10 V | - | 700mW (Ta), 27W (Tc) | |||||||||||||||||||||||||||
|
TK40S06N1L,LQ | 0.9100 | |
7800 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK40S06 | MOSFET (Metal Oxide) | DPAK+ | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 40A (Ta) | 4.5V, 10V | 10.5mOhm @ 20A, 10V | 2.5V @ 200µA | 26 nC @ 10 V | ±20V | 1650 pF @ 10 V | - | 88.2W (Tc) | |||||||||||||||||||||||||||
 |
TPCP8107,LF | 0.7200 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SMD, Flat Lead | TPCP8107 | MOSFET (Metal Oxide) | PS-8 | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 40 V | 8A (Ta) | 6V, 10V | 18mOhm @ 4A, 10V | 3V @ 1mA | 44.6 nC @ 10 V | +10V, -20V | 2160 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||||||||
|
TPCA8128,L1Q | - | |
9059 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerVDFN | TPCA8128 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | - | 1 (Unlimited) | 264-TPCA8128L1QTR | EAR99 | 8541.29.0095 | 5,000 | P-Channel | 30 V | 34A (Ta) | 4.5V, 10V | 4.8mOhm @ 17A, 10V | 2V @ 500µA | 115 nC @ 10 V | +20V, -25V | 4800 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | |||||||||||||||||||||||||||
|
TW070J120B,S1Q | 32.4200 | |
104 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | -55°C ~ 175°C | Through Hole | TO-3P-3, SC-65-3 | TW070J120 | SiCFET (Silicon Carbide) | TO-3P(N) | download | 1 (Unlimited) | 264-TW070J120BS1Q | EAR99 | 8541.29.0095 | 25 | N-Channel | 1200 V | 36A (Tc) | 20V | 90mOhm @ 18A, 20V | 5.8V @ 20mA | 67 nC @ 20 V | ±25V, -10V | 1680 pF @ 800 V | Standard | 272W (Tc) | |||||||||||||||||||||||||||
 |
CUHS15F30,H3F | 0.4800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, Flat Lead | CUHS15 | Schottky | US2H | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 520 mV @ 1.5 A | 50 µA @ 30 V | 150°C | 1.5A | 170pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||
 |
SSM6N951L,EFF | 0.9900 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | - | Surface Mount | 6-SMD, No Lead | SSM6N951 | MOSFET (Metal Oxide) | - | 6-TCSPA (2.14x1.67) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 10,000 | 2 N-Channel (Dual) Common Drain | 12V | 8A | 5.1mOhm @ 8A, 4.5V | - | - | - | - | |||||||||||||||||||||||||||||
 |
SSM3J374R,LXHF | 0.4000 | |
9279 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | SOT-23F | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 30 V | 4A (Ta) | 4V, 10V | 71mOhm @ 3A, 10V | 2V @ 100µA | 5.9 nC @ 10 V | +10V, -20V | 280 pF @ 15 V | - | 1W (Ta) | |||||||||||||||||||||||||||||
|
SSM3K376R,LXHF | 0.4000 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | SOT-23F | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 4A (Ta) | 1.8V, 4.5V | 56mOhm @ 2A, 4.5V | 1V @ 1mA | 2.2 nC @ 4.5 V | +12V, -8V | 200 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||||||||
 |
SSM6J422TU,LXHF | 0.4100 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | MOSFET (Metal Oxide) | UF6 | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 4A (Ta) | 1.5V, 4.5V | 42.7mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | +6V, -8V | 840 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||||||||
 |
SSM3J145TU,LXHF | 0.3700 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | MOSFET (Metal Oxide) | UFM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 3A (Ta) | 1.5V, 4.5V | 103mOhm @ 1A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | +6V, -8V | 270 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||||||||||
 |
SSM3K62TU,LXHF | 0.4000 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Lead | MOSFET (Metal Oxide) | UFM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 800mA (Ta) | 1.2V, 4.5V | 57mOhm @ 800mA, 4.5V | 1V @ 1mA | 2 nC @ 4.5 V | ±8V | 177 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||||||||||
 |
SSM3J168F,LXHF | 0.4300 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-236-3, SC-59, SOT-23-3 | MOSFET (Metal Oxide) | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 60 V | 400mA (Ta) | 4V, 10V | 1.55Ohm @ 200mA, 10V | 2V @ 1mA | 3 nC @ 10 V | +10V, -20V | 82 pF @ 10 V | - | 600mW (Ta) | |||||||||||||||||||||||||||||
|
CMF01A,LQ(M | - | |
5318 | 0.00000000 | Toshiba Semiconductor and Storage | - | Box | Active | Surface Mount | SOD-128 | Standard | M-FLAT (2.4x3.8) | download | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 2 V @ 2 A | 100 ns | 50 µA @ 600 V | 150°C | 2A | - | ||||||||||||||||||||||||||||||||||
 |
2SA2060(TE12L,ZF) | - | |
9451 | 0.00000000 | Toshiba Semiconductor and Storage | - | Box | Active | 150°C (TJ) | Surface Mount | TO-243AA | 1 W | PW-MINI | download | EAR99 | 8541.29.0095 | 1 | 50 V | 2 A | 100nA (ICBO) | PNP | 200mV @ 33mA, 1A | 200 @ 300mA, 2V | - | ||||||||||||||||||||||||||||||||||
|
2SC5714(TE12L,ZF) | - | |
5601 | 0.00000000 | Toshiba Semiconductor and Storage | - | Box | Active | 150°C (TJ) | Surface Mount | TO-243AA | 1 W | PW-MINI | download | EAR99 | 8541.29.0095 | 1 | 20 V | 4 A | 100nA (ICBO) | NPN | 150mV @ 32mA, 1.6A | 400 @ 500mA, 2V | - | ||||||||||||||||||||||||||||||||||
|
CMG03A,LQ(M | - | |
7420 | 0.00000000 | Toshiba Semiconductor and Storage | - | Box | Active | Surface Mount | SOD-128 | Standard | M-FLAT (2.4x3.8) | download | EAR99 | 8541.10.0080 | 1 | Standard Recovery >500ns, > 200mA (Io) | 600 V | 1.1 V @ 2 A | 5 µA @ 600 V | 150°C | 2A | - | |||||||||||||||||||||||||||||||||||
 |
CRG04A,LQ(M | - | |
4458 | 0.00000000 | Toshiba Semiconductor and Storage | - | Box | Active | Surface Mount | SOD-123F | Standard | S-FLAT (1.6x3.5) | download | EAR99 | 8541.10.0080 | 1 | Standard Recovery >500ns, > 200mA (Io) | 600 V | 1.1 V @ 1 A | 5 µA @ 600 V | 150°C | 1A | - | |||||||||||||||||||||||||||||||||||
 |
TPHR9003NL1,LQ | 1.5900 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 150A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2.3V @ 1mA | 74 nC @ 10 V | ±20V | 6900 pF @ 15 V | - | 800mW (Ta), 170W (Tc) | |||||||||||||||||||||||||||||
|
TK6R9P08QM,RQ | 1.1400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 80 V | 62A (Tc) | 6V, 10V | 6.9mOhm @ 31A, 10V | 3.5V @ 500µA | 39 nC @ 10 V | ±20V | 2700 pF @ 40 V | - | 89W (Tc) | ||||||||||||||||||||||||||||
 |
TK5R1A08QM,S4X | 1.5900 | |
66 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tube | Active | 175°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 70A (Tc) | 6V, 10V | 5.1mOhm @ 35A, 10V | 3.5V @ 700µA | 54 nC @ 10 V | ±20V | 3980 pF @ 40 V | - | 45W (Tc) | ||||||||||||||||||||||||||||
 |
RN4989,LXHF(CT | 0.4400 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4989 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz, 200MHz | 47kOhms | 22kOhms | |||||||||||||||||||||||||||||||
 |
RN1310,LXHF | 0.3900 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1310 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 4.7 kOhms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
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