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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Capacitance Ratio | Capacitance Ratio Condition | Q @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RN1963FE(TE85L,F) | 0.1000 |  |
915 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOT-563, SOT-666 | RN1963 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz | 22kOhms | 22kOhms | |||||||||||||||||||||||||||||||||||
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TTD1409B,S4X | 1.6000 | |
14 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TTD1409 | 2 W | TO-220SIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | 400 V | 6 A | 20µA (ICBO) | NPN - Darlington | 2V @ 40mA, 4A | 600 @ 2A, 2V | - | ||||||||||||||||||||||||||||||||||||
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TRS10E65H,S1Q | 2.8900 | |
340 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | ROHS3 Compliant | 1 (Unlimited) | 264-TRS10E65H,S1Q | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 10 A | 0 ns | 100 µA @ 650 V | 175°C | 10A | 649pF @ 1V, 1MHz | |||||||||||||||||||||||||||||||||||
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1SV325,H3F | 0.3800 | |
7628 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-79, SOD-523 | 1SV325 | ESC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.30.0080 | 4,000 | 12pF @ 4V, 1MHz | Single | 10 V | 4.3 | C1/C4 | - | |||||||||||||||||||||||||||||||||||||
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BAV99W,LF | 0.2100 | |
518 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | BAV99 | Standard | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 1 Pair Series Connection | 100 V | 150mA | 1.25 V @ 150 mA | 4 ns | 200 nA @ 80 V | 150°C (Max) | |||||||||||||||||||||||||||||||||||
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CRZ30(TE85L,Q) | - | |
7496 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | ±10% | -40°C ~ 150°C | Surface Mount | SOD-123F | CRZ30 | 700 mW | S-FLAT (1.6x3.5) | download | 1 (Unlimited) | CRZ30TR-NDR | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 21 V | 30 V | 30 Ohms | |||||||||||||||||||||||||||||||||||||
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2SJ304(F) | - | |
2391 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SJ304 | MOSFET (Metal Oxide) | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | P-Channel | 60 V | 14A (Ta) | 4V, 10V | 120mOhm @ 7A, 10V | 2V @ 1mA | 45 nC @ 10 V | ±20V | 1200 pF @ 10 V | - | 40W (Tc) | ||||||||||||||||||||||||||||||||
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TRS6E65C,S1AQ | - | |
2406 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | Through Hole | TO-220-2 | TRS6E65 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 6 A | 0 ns | 90 µA @ 650 V | 175°C (Max) | 6A | 35pF @ 650V, 1MHz | |||||||||||||||||||||||||||||||||||
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SSM6P36TU,LF | 0.3800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6P36 | MOSFET (Metal Oxide) | 500mW (Ta) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 P-Channel (Dual) | 20V | 330mA (Ta) | 1.31Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.2nC @ 4V | 43pF @ 10V | Logic Level Gate, 1.5V Drive | |||||||||||||||||||||||||||||||||
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RN2119MFV,L3F | 0.1800 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2119 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 120 @ 1mA, 5V | 1 kOhms | |||||||||||||||||||||||||||||||||||||
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RN1901,LXHF(CT | 0.3600 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1901 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250MHz | 4.7kOhms | 4.7kOhms | |||||||||||||||||||||||||||||||||||
|
RN1910FE,LXHF(CT | 0.3800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN1910 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 4.7kOhms | - | |||||||||||||||||||||||||||||||||||
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RN1907,LF | - | |
3239 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1907 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 10kOhms | 47kOhms | |||||||||||||||||||||||||||||||||||
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2SA1201-Y(TE12L,ZC | 0.5200 | |
3081 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-243AA | 500 mW | PW-MINI | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1,000 | 120 V | 800 mA | 100nA (ICBO) | PNP | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | ||||||||||||||||||||||||||||||||||||
|
RN2910FE,LXHF(CT | 0.3800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2910 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz | 4.7kOhms | - | |||||||||||||||||||||||||||||||||||
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TK22A10N1,S4X | 1.4100 | |
4640 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK22A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 22A (Tc) | 10V | 13.8mOhm @ 11A, 10V | 4V @ 300µA | 28 nC @ 10 V | ±20V | 1800 pF @ 50 V | - | 30W (Tc) | |||||||||||||||||||||||||||||||
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TK100E10N1,S1X | 3.9800 | |
147 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK100E10 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 100A (Ta) | 10V | 3.4mOhm @ 50A, 10V | 4V @ 1mA | 140 nC @ 10 V | ±20V | 8800 pF @ 50 V | - | 255W (Tc) | |||||||||||||||||||||||||||||||
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RN4908,LXHF(CT | 0.4400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4908 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz, 250MHz | 22kOhms | 47kOhms | |||||||||||||||||||||||||||||||||||
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TK090N65Z,S1F | 6.3400 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-247-3 | TK090N65 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | 264-TK090N65ZS1F | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 30A (Ta) | 10V | 90mOhm @ 15A, 10V | 4V @ 1.27mA | 47 nC @ 10 V | ±30V | 2780 pF @ 300 V | - | 230W (Tc) | ||||||||||||||||||||||||||||||
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CLS03(T6L,CANO-O,Q | - | |
8132 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS03 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 580 mV @ 10 A | 1 mA @ 60 V | -40°C ~ 125°C | 10A | 345pF @ 10V, 1MHz | |||||||||||||||||||||||||||||||||||||
 |
2SA965-Y(T6CANO,FM | - | |
3779 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA965 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | PNP | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | ||||||||||||||||||||||||||||||||||||
 |
TPN3R704PL,L1Q | 0.7800 | |
4021 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN3R704 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 40 V | 80A (Tc) | 4.5V, 10V | 3.7mOhm @ 40A, 10V | 2.4V @ 200µA | 27 nC @ 10 V | ±20V | 2500 pF @ 20 V | - | 630mW (Ta), 86W (Tc) | |||||||||||||||||||||||||||||||
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CRS08(TE85L,Q,M) | 0.5200 | |
29 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRS08 | Schottky | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 360 mV @ 1.5 A | 1 mA @ 30 V | -40°C ~ 125°C | 1.5A | 90pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||||
|
SSM3J56MFV,L3F | 0.4500 | |
490 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-723 | SSM3J56 | MOSFET (Metal Oxide) | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | P-Channel | 20 V | 800mA (Ta) | 1.2V, 4.5V | 390mOhm @ 800mA, 4.5V | - | ±8V | 100 pF @ 10 V | - | 150mW (Ta) | ||||||||||||||||||||||||||||||||
 |
2SK3566(STA4,Q,M) | 1.6700 | |
955 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SK3566 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 2.5A (Ta) | 10V | 6.4Ohm @ 1.5A, 10V | 4V @ 1mA | 12 nC @ 10 V | ±30V | 470 pF @ 25 V | - | 40W (Tc) | |||||||||||||||||||||||||||||||
|
2SA1020-Y(ND1,AF) | - | |
4519 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||||||||||
|
RN2906,LF | 0.2800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2906 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 4.7kOhms | 47kOhms | ||||||||||||||||||||||||||||||||||
|
TK8A60DA(STA4,Q,M) | - | |
1362 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 7.5A (Ta) | 10V | 1Ohm @ 4A, 10V | 4V @ 1mA | 20 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 45W (Tc) | |||||||||||||||||||||||||||||||
 |
SSM3J112TU,LF | 0.4500 | |
9931 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | SSM3J112 | MOSFET (Metal Oxide) | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 1.1A (Ta) | 4V, 10V | 390mOhm @ 500mA, 10V | 1.8V @ 100µA | ±20V | 86 pF @ 15 V | - | 800mW (Ta) | ||||||||||||||||||||||||||||||||
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CRS20I40A(TE85L,QM | 0.5000 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRS20I40 | Schottky | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 600 mV @ 2 A | 60 µA @ 40 V | 150°C (Max) | 2A | 35pF @ 10V, 1MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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