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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Test Condition | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RN1107MFV,L3F(CT | 0.1800 |  |
4060 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1107 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 10 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||||||||
 |
TRS6E65H,S1Q | 2.3200 | |
400 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-220-2 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | ROHS3 Compliant | 1 (Unlimited) | 264-TRS6E65H,S1Q | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 6 A | 0 ns | 70 µA @ 650 V | 175°C | 6A | 392pF @ 1V, 1MHz | ||||||||||||||||||||||||||||||||||||
|
2SA1483-Y(TE12L,F) | - | |
6130 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-243AA | 2SA1483 | PW-MINI | - | 264-2SA1483-Y(TE12LF)TR | 2,500 | - | 45V | 200mA | PNP | 120 @ 10mA, 1V | 200MHz | - | ||||||||||||||||||||||||||||||||||||||||
 |
TK6R9P08QM,RQ | 1.1400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 80 V | 62A (Tc) | 6V, 10V | 6.9mOhm @ 31A, 10V | 3.5V @ 500µA | 39 nC @ 10 V | ±20V | 2700 pF @ 40 V | - | 89W (Tc) | |||||||||||||||||||||||||||||||||
|
RN2101MFV,L3XHF(CT | 0.3400 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2101 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 30 @ 10mA, 5V | 250 MHz | 4.7 kOhms | 4.7 kOhms | ||||||||||||||||||||||||||||||||||||
 |
HN1B01FU-GR,LXHF | 0.3700 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN1B01 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 150mA | 100nA (ICBO) | NPN, PNP | 300mV @ 10mA, 100mA / 250mV @ 10mA, 100mA | 200 @ 2mA, 6V | 120MHz, 150MHz | |||||||||||||||||||||||||||||||||||||
|
TK16V60W5,LVQ | 3.4800 | |
3143 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 15.8A (Ta) | 10V | 245mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 139W (Tc) | |||||||||||||||||||||||||||||||||
 |
2SK879-Y(TE85L,F) | 0.4200 | |
24 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SK879 | 100 mW | USM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 8.2pF @ 10V | 1.2 mA @ 10 V | 400 mV @ 100 nA | |||||||||||||||||||||||||||||||||||||||
 |
TK3R1A04PL,S4X | 1.2700 | |
3177 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tube | Active | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TK3R1A04 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 40 V | 82A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4 nC @ 10 V | ±20V | 4670 pF @ 20 V | - | 36W (Tc) | ||||||||||||||||||||||||||||||||
|
TK7A65W,S5X | 1.6700 | |
2976 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK7A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 6.8A (Ta) | 10V | 780mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15 nC @ 10 V | ±30V | 490 pF @ 300 V | - | 30W (Tc) | ||||||||||||||||||||||||||||||||
 |
SSM6N43FU,LF | 0.4500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N43 | MOSFET (Metal Oxide) | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 500mA | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | Logic Level Gate, 1.5V Drive | ||||||||||||||||||||||||||||||||||
 |
TK50E08K3,S1X(S | - | |
8993 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | - | Through Hole | TO-220-3 | TK50E08 | MOSFET (Metal Oxide) | TO-220-3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 75 V | 50A (Tc) | 12mOhm @ 25A, 10V | - | 55 nC @ 10 V | - | - | |||||||||||||||||||||||||||||||||||
|
2SC4116-GR,LXHF | 0.3300 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 100mA | 200 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||||||||||||||||
 |
TK34E10N1,S1X | 1.5900 | |
1876 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK34E10 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 75A (Tc) | 10V | 9.5mOhm @ 17A, 10V | 4V @ 500µA | 38 nC @ 10 V | ±20V | 2600 pF @ 50 V | - | 103W (Tc) | ||||||||||||||||||||||||||||||||
|
TK40P03M1(T6RSS-Q) | - | |
4208 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK40P03 | MOSFET (Metal Oxide) | D-Pak | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 30 V | 40A (Ta) | 4.5V, 10V | 10.8mOhm @ 20A, 10V | 2.3V @ 100µA | 17.5 nC @ 10 V | ±20V | 1150 pF @ 10 V | - | - | ||||||||||||||||||||||||||||||||
 |
SSM5N15FE(TE85L,F) | 0.4500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-553 | SSM5N15 | MOSFET (Metal Oxide) | ESV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | N-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | ±20V | 7.8 pF @ 3 V | - | 150mW (Ta) | |||||||||||||||||||||||||||||||||
|
TK40S06N1L,LQ | 0.9100 | |
7800 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK40S06 | MOSFET (Metal Oxide) | DPAK+ | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 40A (Ta) | 4.5V, 10V | 10.5mOhm @ 20A, 10V | 2.5V @ 200µA | 26 nC @ 10 V | ±20V | 1650 pF @ 10 V | - | 88.2W (Tc) | ||||||||||||||||||||||||||||||||
 |
SSM3K72CTC,L3F | 0.3000 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | SSM3K72 | MOSFET (Metal Oxide) | CST3C | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 60 V | 150mA (Ta) | 4.5V, 10V | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35 nC @ 4.5 V | ±20V | 17 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||||||||||||||||||
 |
2SC2655-O,F(J | - | |
3435 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2655 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | |||||||||||||||||||||||||||||||||||||
 |
SSM3K7002BS,LF | - | |
5298 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3K7002 | MOSFET (Metal Oxide) | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 200mA (Ta) | 4.5V, 10V | 2.1Ohm @ 500mA, 10V | 2.5V @ 250µA | ±20V | 17 pF @ 25 V | - | 200mW (Ta) | ||||||||||||||||||||||||||||||||||
 |
RN1114,LF | 0.2000 | |
7018 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1114 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 1 kOhms | 10 kOhms | ||||||||||||||||||||||||||||||||||||
|
RN1312(TE85L,F) | 0.2800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1312 | 150 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 22 kOhms | ||||||||||||||||||||||||||||||||||||
 |
GT30J341,Q | 3.4000 | |
100 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | GT30J341 | Standard | 230 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT30J341Q | EAR99 | 8541.29.0095 | 100 | 300V, 30A, 24Ohm, 15V | 50 ns | 600 V | 59 A | 120 A | 2V @ 15V, 30A | 800µJ (on), 600µJ (off) | 80ns/280ns | |||||||||||||||||||||||||||||||||
|
SSM6K208FE,LF | 0.5200 | |
2897 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-563, SOT-666 | SSM6K208 | MOSFET (Metal Oxide) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.21.0095 | 4,000 | N-Channel | 30 V | 1.9A (Ta) | 1.8V, 4V | 133mOhm @ 1A, 4V | 1V @ 1mA | 1.9 nC @ 4 V | ±12V | 123 pF @ 15 V | - | 500mW (Ta) | |||||||||||||||||||||||||||||||
|
TJ80S04M3L,LXHQ | 1.6500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ80S04 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 80A (Ta) | 6V, 10V | 5.2mOhm @ 40A, 10V | 3V @ 1mA | 158 nC @ 10 V | +10V, -20V | 7770 pF @ 10 V | - | 100W (Tc) | |||||||||||||||||||||||||||||||||
|
CRS10I30B(TE85L,QM | 0.4100 | |
9920 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | Schottky | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 420 mV @ 1 A | 60 µA @ 30 V | 150°C | 1A | 50pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||||||
|
TK58A06N1,S4X | 1.3300 | |
46 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK58A06 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 58A (Tc) | 10V | 5.4mOhm @ 29A, 10V | 4V @ 500µA | 46 nC @ 10 V | ±20V | 3400 pF @ 30 V | - | 35W (Tc) | ||||||||||||||||||||||||||||||||
 |
TK8A50D(STA4,Q,M) | 1.6800 | |
14 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8A50 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 8A (Ta) | 10V | 850mOhm @ 4A, 10V | 4V @ 1mA | 16 nC @ 10 V | ±30V | 800 pF @ 25 V | - | 40W (Tc) | ||||||||||||||||||||||||||||||||
|
TK16A55D(STA4,Q,M) | - | |
3760 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK16A55 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 550 V | 16A (Ta) | 330mOhm @ 8A, 10V | 4V @ 1mA | 45 nC @ 10 V | 2600 pF @ 25 V | - | - | ||||||||||||||||||||||||||||||||||
|
RN1109(T5L,F,T) | - | |
2234 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-75, SOT-416 | RN1109 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250 MHz | 47 kOhms | 22 kOhms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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